JPS6129562A - 印字用発光ダイオ−ド - Google Patents

印字用発光ダイオ−ド

Info

Publication number
JPS6129562A
JPS6129562A JP15172284A JP15172284A JPS6129562A JP S6129562 A JPS6129562 A JP S6129562A JP 15172284 A JP15172284 A JP 15172284A JP 15172284 A JP15172284 A JP 15172284A JP S6129562 A JPS6129562 A JP S6129562A
Authority
JP
Japan
Prior art keywords
printing
light
emitting diode
electrode
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15172284A
Other languages
English (en)
Other versions
JPH0526664B2 (ja
Inventor
Hiromi Takasu
高須　広海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP15172284A priority Critical patent/JPS6129562A/ja
Priority to US06/753,393 priority patent/US4633280A/en
Publication of JPS6129562A publication Critical patent/JPS6129562A/ja
Publication of JPH0526664B2 publication Critical patent/JPH0526664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Led Devices (AREA)
  • Dot-Matrix Printers And Others (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 イ）産業上の利用分野。
本発明は印字品質のよい高密度化に適した光プリンタヘ
ッドに好適な印字用発光ダイオードに関する。
口）従来の技術 近年、第２図（ａ）に示すように整列した印字ドツトに
対応する発光部（１）ｆｌ）・・・を有する発光ダイオ
ード（２１！２１・・・を用いて光プリンタヘッドに用
いる事が研究されている。このような印字用発光ダイオ
ードに関しては、例えば電子通信学会研究報告１Ｆ！８
２−５２第２３頁（昭和５７年）等にて報告されている
が、第２図（ｂｌに示すようにＧａＡｓＰの、ｎ型層（
３）上に拡散によるＰ型領域（４）を形成し、Ｐ型領域
（４）の一部分を覆うアルミニウムの電極（５）を設け
ている。
先の資料ではＰ型領域（４）の大きさを６５μｍ×５０
、ｐｍとし、印字ドツト（光学的に露出したＰ型領域（
４）の平面的形状又は大きさ）として５０×３０．４ｍ
の大きさを設計し、電極（５）の巾を印字ドツトの巾よ
り充分大きくしてＰ型領域（４）の−辺を完全に電Ｔｈ
　（５１で覆っている。、しかしこの方法は印字ドツト
が集積化してくるとある１つの印字ドツトの電極が隣接
する印字ドツト又は隣接する印字ドツトの電極に近接す
るので集積度に限界がある。
さらに拡散のマスクと電極のマスクの位置あわせも集積
密度が高くなるに従って困難な作業となる。
一方昭和５５年度電子通信学会通信部門全国大会第５９
２テーマ（予稿集１−２１１頁）には第５図に示す如く
Ｐ型領域−の中と等しい巾の先端部を有する電極α９が
利用されている。これはＰ型頭域Ｉの側辺を基準に電極
マスクがセットでき作業性がよい。ところが、拡散によ
るＰ型領域１４）（１４）は深くなるに従って領域が一
拡大しているので、これを点灯させると表面拡散面積よ
り２〜１０９６大きい面積で光が放出される。アルミニ
ウムの電極（５１ｆｉＳは当然遮光性があるため、電極
下のＰ型領域表面は光が遮ぎられるが、深部Ｐ型領域か
らの光が電極ａ５！の両側から出てくるので略凹字状印
字ドツトとなる事がわかった。深部Ｐ型領域の深さは高
々５．０声ｍ（通常は２．０声ｍ前後）と浅いので、印
字ドツト密度が低い時（例えば３．８５ドツト／ｎで印
字ドツト巾がドツト間隔の５０９６未満の時）にはこの
電極周縁の光の筋はそれ程問題にならない。しかし印字
ドツト密度が高い時（例えば９５ドツ）／Ｗ以上）にな
ると目立ち、特に電極下のＰｎ接合は電流分布が集中し
やすいので高輝度になりやすいから８ｍＡ／ドツト以上
の大きな電流を流すと完全な凹字状ドツトになってしま
い不都合である。
ハ）発明が解決しようとする問題点 本発明は上述の点を考慮して製造しゃすく印字品質の優
れた印字用発光ダイオードを提供するものである。
二）問題点を解決するための手段 本発明は拡散領域の表面形状を略凸字状にし、その略凸
字状の突起部に電極を設けるものである。
ホ）作　　　用 このようにする事で、電極のマスクは拡散領域の広い部
分（略凸字状の基部）の側辺又は角部分を基準に位置あ
わせできるので印字ドツト密度が高くても作業性がよく
、・また印字ドツトの形状としては略凸字状の基部のみ
となって余分な光の筋は発生しないから印字品質が向上
する。
へ）実　　施　　例 第１図は第２図（ａ）（ｂ）で説明した発光ダイオード
＋２１１２１・・・の表面の本発明における要部平面図
である。ｎ型のＧａＡｓＰ成長層表面に略凸字状に亜鉛
を選択拡散してＰ型領域（ハ）を形成する。そしてその
Ｐ型領域（ハ）の略凸字状の突起部（２４ａ）を覆うよ
うにアルミニウムからなる遮光性の電極に）を　。
設けである。電極（ハ）は好ましくはＰ型領域（ハ）の
略凸部字状の基部（２４ｂ）の１部と対応する個所を具
備している。第１図の例では略凸部字状の基部（２４ｂ
）の１　ｆＲ１１辺（２４ｃ）と−直線上に並ぶ側辺（
２５ｃ）を設けであるが、角（１（１１）に対向する突
起や切欠でもよい。
具体的に例示すると、Ｐ型領域僻の拡散マスクパターン
は一辺５０μｍの四角形に長さ２０／１ｍ巾４０．ＩＬ
ｍの突起部（２４ａ）を設けた。これを３００ドツト／
１ｎｃｈに配置し深さ２．５．ｉ＋ｍに亜鉛を選択拡散
したのら、Ｐ型領域（ハ）の略凸字状の基部（２４ｂ）
から２μｍ離して電極（ホ）を蒸着し、オーミック接触
をとった。この形状で５ｍＡ／ドツトの電流を流した時
−辺５２／／ｍのほぼ方形な印字ドツト、１０ｍＡ／ド
ツトの電流を流した時−辺５５ｐｍの方形な印字ドツト
を得ることが出来た。
また寸法を変化させて印字ドツト密度を高めた１　　　
　　　　ところ、４００ドツト／１ｎｃｈ、印字ドツト
中がドツト間隔の７５９６まで方形の印字ドツトをもつ
印字用発光ダイオードが形成できたが、これ以上の解像
度に対しては、印字ドツトの形状を解析するだめの高密
度単焦点レンズアレイが入手できないため現段階では確
認できなかった。
ト）発明の効果 以上の如く本発明は印字ドツトの領域が略凸字状の基部
で明確化されているので、電極の先端を不必要に広くす
る必要もなく、壕だ電極のマスクの位置あわせにおけ名
基準がとりやすいので製造しやすい。さらに略凸字状の
基部が正方形であっても多角形であっでも（即ち白字そ
のものでなく鍵穴凸状等であっても）目的とする印字ド
ツトの形状に極めて近ずける事ができるので印字品質が
優れている。
【図面の簡単な説明】
第１図は本発明の印字用発光ダイオードの要部平面図、
第２図（ａ）は光プリンタヘッドの斜視図、第２図（ｂ
ｌは印字用発光ダイオードの要部断面図、第３図は従来
の印字用発光ダイオードの要部平面図である。

Claims (1)

    【特許請求の範囲】
  1. １）第１導電型層の表面側に設けられた略凸字状の第２
    導電型領域と、第２導電型領域の略凸字状の突起部を覆
    う遮光性の電極とを具備した事を特徴とする印字用発光
    ダイオード。
JP15172284A 1984-07-20 1984-07-20 印字用発光ダイオ−ド Granted JPS6129562A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15172284A JPS6129562A (ja) 1984-07-20 1984-07-20 印字用発光ダイオ−ド
US06/753,393 US4633280A (en) 1984-07-20 1985-07-10 Unit of light emitting diode arrays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15172284A JPS6129562A (ja) 1984-07-20 1984-07-20 印字用発光ダイオ−ド

Publications (2)

Publication Number Publication Date
JPS6129562A true JPS6129562A (ja) 1986-02-10
JPH0526664B2 JPH0526664B2 (ja) 1993-04-16

Family

ID=15524851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15172284A Granted JPS6129562A (ja) 1984-07-20 1984-07-20 印字用発光ダイオ−ド

Country Status (2)

Country Link
US (1) US4633280A (ja)
JP (1) JPS6129562A (ja)

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JPS63216391A (ja) * 1987-03-04 1988-09-08 Nec Corp Ｌｅｄ記録ヘツド
JPS6457049U (ja) * 1987-10-02 1989-04-10
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US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
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US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
US8188879B2 (en) 2007-05-24 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light global positioning and routing communication system
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Publication number Priority date Publication date Assignee Title
US3850517A (en) * 1972-09-25 1974-11-26 Xerox Corp High speed printout system
DE2725265A1 (de) * 1976-06-04 1977-12-08 Tokyo Shibaura Electric Co Halbleiter-leuchtanzeigevorrichtung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177058U (ja) * 1986-04-28 1987-11-10
JPS63216391A (ja) * 1987-03-04 1988-09-08 Nec Corp Ｌｅｄ記録ヘツド
JPS6457049U (ja) * 1987-10-02 1989-04-10
EP0881686A2 (en) 1997-05-28 1998-12-02 Oki Electric Industry Company, Limited LED array and LED printer head

Also Published As

Publication number Publication date
US4633280A (en) 1986-12-30
JPH0526664B2 (ja) 1993-04-16

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