KR910004737B1 - 백바이어스전압 발생회로 - Google Patents

백바이어스전압 발생회로 Download PDF

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Publication number
KR910004737B1
KR910004737B1 KR1019880016959A KR880016959A KR910004737B1 KR 910004737 B1 KR910004737 B1 KR 910004737B1 KR 1019880016959 A KR1019880016959 A KR 1019880016959A KR 880016959 A KR880016959 A KR 880016959A KR 910004737 B1 KR910004737 B1 KR 910004737B1
Authority
KR
South Korea
Prior art keywords
substrate
back bias
voltage generation
voltage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880016959A
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English (en)
Korean (ko)
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KR900010774A (ko
Inventor
민동선
최훈
Original Assignee
삼성전자 주식회사
안시환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 안시환 filed Critical 삼성전자 주식회사
Priority to KR1019880016959A priority Critical patent/KR910004737B1/ko
Priority to JP1256905A priority patent/JPH0783255B2/ja
Priority to US07/417,314 priority patent/US5034625A/en
Publication of KR900010774A publication Critical patent/KR900010774A/ko
Application granted granted Critical
Publication of KR910004737B1 publication Critical patent/KR910004737B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
KR1019880016959A 1988-12-19 1988-12-19 백바이어스전압 발생회로 Expired KR910004737B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019880016959A KR910004737B1 (ko) 1988-12-19 1988-12-19 백바이어스전압 발생회로
JP1256905A JPH0783255B2 (ja) 1988-12-19 1989-09-30 半導体基板バイアス回路
US07/417,314 US5034625A (en) 1988-12-19 1989-10-05 Semiconductor substrate bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880016959A KR910004737B1 (ko) 1988-12-19 1988-12-19 백바이어스전압 발생회로

Publications (2)

Publication Number Publication Date
KR900010774A KR900010774A (ko) 1990-07-09
KR910004737B1 true KR910004737B1 (ko) 1991-07-10

Family

ID=19280339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016959A Expired KR910004737B1 (ko) 1988-12-19 1988-12-19 백바이어스전압 발생회로

Country Status (3)

Country Link
US (1) US5034625A (cg-RX-API-DMAC10.html)
JP (1) JPH0783255B2 (cg-RX-API-DMAC10.html)
KR (1) KR910004737B1 (cg-RX-API-DMAC10.html)

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US5241575A (en) * 1989-12-21 1993-08-31 Minolta Camera Kabushiki Kaisha Solid-state image sensing device providing a logarithmically proportional output signal
JP2557271B2 (ja) * 1990-04-06 1996-11-27 三菱電機株式会社 内部降圧電源電圧を有する半導体装置における基板電圧発生回路
US5179297A (en) * 1990-10-22 1993-01-12 Gould Inc. CMOS self-adjusting bias generator for high voltage drivers
JP2724919B2 (ja) * 1991-02-05 1998-03-09 三菱電機株式会社 基板バイアス発生装置
JPH04255989A (ja) * 1991-02-07 1992-09-10 Mitsubishi Electric Corp 半導体記憶装置および内部電圧発生方法
US5187396A (en) * 1991-05-22 1993-02-16 Benchmarq Microelectronics, Inc. Differential comparator powered from signal input terminals for use in power switching applications
EP0545266A3 (en) * 1991-11-29 1993-08-04 Nec Corporation Semiconductor integrated circuit
KR950002015B1 (ko) * 1991-12-23 1995-03-08 삼성전자주식회사 하나의 오실레이터에 의해 동작되는 정전원 발생회로
JPH05219443A (ja) * 1992-02-05 1993-08-27 Minolta Camera Co Ltd 固体撮像装置
EP0564204A3 (en) * 1992-03-30 1994-09-28 Mitsubishi Electric Corp Semiconductor device
JP3253726B2 (ja) * 1993-02-26 2002-02-04 株式会社東芝 半導体記憶装置の基板バイアス発生回路および基板バイアスレベルの制御方法
US6031411A (en) * 1993-06-28 2000-02-29 Texas Instruments Incorporated Low power substrate bias circuit
DE69327164T2 (de) * 1993-09-30 2000-05-31 Stmicroelectronics S.R.L., Agrate Brianza Spannungserhöhungsschaltung zur Erzeugung von positiven und negativen erhöhten Spannungen
US5642073A (en) * 1993-12-06 1997-06-24 Micron Technology, Inc. System powered with inter-coupled charge pumps
US5493249A (en) * 1993-12-06 1996-02-20 Micron Technology, Inc. System powered with inter-coupled charge pumps
JP3626521B2 (ja) 1994-02-28 2005-03-09 三菱電機株式会社 基準電位発生回路、電位検出回路および半導体集積回路装置
KR0123849B1 (ko) * 1994-04-08 1997-11-25 문정환 반도체 디바이스의 내부 전압발생기
US5539338A (en) * 1994-12-01 1996-07-23 Analog Devices, Inc. Input or output selectable circuit pin
DE69430806T2 (de) * 1994-12-05 2002-12-12 Stmicroelectronics S.R.L., Agrate Brianza Ladungspumpe-Spannungsvervielfacherschaltung mit Regelungsrückkopplung und Verfahren dafür
JPH08203269A (ja) * 1995-01-23 1996-08-09 Mitsubishi Electric Corp 内部電圧発生回路、半導体記憶装置および消費電流測定方法
JPH08237938A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 内部電圧発生回路
US6259310B1 (en) * 1995-05-23 2001-07-10 Texas Instruments Incorporated Apparatus and method for a variable negative substrate bias generator
US5614859A (en) * 1995-08-04 1997-03-25 Micron Technology, Inc. Two stage voltage level translator
US5612644A (en) * 1995-08-31 1997-03-18 Cirrus Logic Inc. Circuits, systems and methods for controlling substrate bias in integrated circuits
JP3614546B2 (ja) * 1995-12-27 2005-01-26 富士通株式会社 半導体集積回路
JPH09205153A (ja) * 1996-01-26 1997-08-05 Toshiba Corp 基板電位検出回路
JP2924949B2 (ja) * 1996-04-15 1999-07-26 日本電気株式会社 半導体集積回路装置
KR100223770B1 (ko) * 1996-06-29 1999-10-15 김영환 반도체 장치의 문턱전압 제어회로
US6064250A (en) * 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
US6198339B1 (en) * 1996-09-17 2001-03-06 International Business Machines Corporation CVF current reference with standby mode
GB2319413B (en) * 1996-11-12 2001-06-06 Lsi Logic Corp Driver circuits
KR100319164B1 (ko) * 1997-12-31 2002-04-22 박종섭 다중레벨검출에의한다중구동장치및그방법
US6016072A (en) * 1998-03-23 2000-01-18 Vanguard International Semiconductor Corporation Regulator system for an on-chip supply voltage generator
EP1151365B1 (en) * 1998-11-18 2004-05-12 Macronix International Co., Ltd. Rapid on chip voltage generation for low power integrated circuits
US6255900B1 (en) 1998-11-18 2001-07-03 Macronix International Co., Ltd. Rapid on chip voltage generation for low power integrated circuits
US6278317B1 (en) 1999-10-29 2001-08-21 International Business Machines Corporation Charge pump system having multiple charging rates and corresponding method
US6275096B1 (en) * 1999-12-14 2001-08-14 International Business Machines Corporation Charge pump system having multiple independently activated charge pumps and corresponding method
JP2001238435A (ja) * 2000-02-25 2001-08-31 Nec Corp 電圧変換回路
JP2002074956A (ja) * 2000-09-04 2002-03-15 Mitsubishi Electric Corp 半導体装置
JP2002343083A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 半導体装置
US7176746B1 (en) * 2001-09-27 2007-02-13 Piconetics, Inc. Low power charge pump method and apparatus
US6891426B2 (en) * 2001-10-19 2005-05-10 Intel Corporation Circuit for providing multiple voltage signals
KR102581100B1 (ko) * 2019-03-07 2023-09-20 삼성전기주식회사 차지 펌프 기반의 네가티브 전압 회로

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
JPH0691457B2 (ja) * 1986-02-17 1994-11-14 三洋電機株式会社 基板バイアス発生回路
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits

Also Published As

Publication number Publication date
JPH02185062A (ja) 1990-07-19
US5034625B1 (cg-RX-API-DMAC10.html) 1993-04-20
KR900010774A (ko) 1990-07-09
JPH0783255B2 (ja) 1995-09-06
US5034625A (en) 1991-07-23

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