KR910001908A - 레이저 스캐닝(scanning)을 사용하여 전자 구성 부품등을 제조하는 석판 인쇄 방법 - Google Patents
레이저 스캐닝(scanning)을 사용하여 전자 구성 부품등을 제조하는 석판 인쇄 방법Info
- Publication number
- KR910001908A KR910001908A KR1019900009209A KR900009209A KR910001908A KR 910001908 A KR910001908 A KR 910001908A KR 1019900009209 A KR1019900009209 A KR 1019900009209A KR 900009209 A KR900009209 A KR 900009209A KR 910001908 A KR910001908 A KR 910001908A
- Authority
- KR
- South Korea
- Prior art keywords
- laser
- workpiece
- electronic components
- radiation
- printing method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US369,714 | 1989-06-22 | ||
US07/369,714 US5221422A (en) | 1988-06-06 | 1989-06-22 | Lithographic technique using laser scanning for fabrication of electronic components and the like |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910001908A true KR910001908A (ko) | 1991-01-31 |
KR940007801B1 KR940007801B1 (ko) | 1994-08-25 |
Family
ID=23456607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900009209A KR940007801B1 (ko) | 1989-06-22 | 1990-06-21 | 레이저 스캐닝(scanning)을 사용하여 전자 구성 부품등을 제조하는 석판 인쇄 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5221422A (ko) |
EP (1) | EP0404340B1 (ko) |
JP (1) | JP2714475B2 (ko) |
KR (1) | KR940007801B1 (ko) |
AT (1) | ATE150555T1 (ko) |
CA (1) | CA2018262C (ko) |
DE (1) | DE69030215T2 (ko) |
Families Citing this family (20)
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US5232549A (en) * | 1992-04-14 | 1993-08-03 | Micron Technology, Inc. | Spacers for field emission display fabricated via self-aligned high energy ablation |
US5646814A (en) | 1994-07-15 | 1997-07-08 | Applied Materials, Inc. | Multi-electrode electrostatic chuck |
US5592358A (en) | 1994-07-18 | 1997-01-07 | Applied Materials, Inc. | Electrostatic chuck for magnetic flux processing |
AU2048097A (en) * | 1997-01-29 | 1998-08-18 | Micronic Laser Systems Ab | Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate |
FR2781916B1 (fr) * | 1998-07-28 | 2000-09-08 | Commissariat Energie Atomique | Procede de realisation collective de tetes magnetiques integrees a surface portante obtenue par photolithographie |
US6080959A (en) * | 1999-03-12 | 2000-06-27 | Lexmark International, Inc. | System and method for feature compensation of an ablated inkjet nozzle plate |
JP4514317B2 (ja) * | 2000-11-27 | 2010-07-28 | 株式会社ミツトヨ | 露光装置 |
US6514866B2 (en) * | 2001-01-12 | 2003-02-04 | North Carolina State University | Chemically enhanced focused ion beam micro-machining of copper |
AU2005238942B2 (en) * | 2004-04-23 | 2008-09-04 | Shell Internationale Research Maatschappij B.V. | Reducing viscosity of oil for production from a hydrocarbon containing formation |
US7655152B2 (en) * | 2004-04-26 | 2010-02-02 | Hewlett-Packard Development Company, L.P. | Etching |
US7534365B2 (en) * | 2004-07-29 | 2009-05-19 | Purdue Research Foundation | Ultra-violet assisted anisotropic etching of PET |
JP4777700B2 (ja) * | 2005-06-17 | 2011-09-21 | 株式会社ディスコ | レーザ加工方法 |
US20080003819A1 (en) * | 2006-06-09 | 2008-01-03 | Octavian Scientific, Inc. | Laser isolation of metal over alumina underlayer and structures formed thereby |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
US8536062B2 (en) * | 2007-09-21 | 2013-09-17 | Advanced Inquiry Systems, Inc. | Chemical removal of oxide layer from chip pads |
US20110163068A1 (en) * | 2008-01-09 | 2011-07-07 | Mark Utlaut | Multibeam System |
US8168961B2 (en) * | 2008-11-26 | 2012-05-01 | Fei Company | Charged particle beam masking for laser ablation micromachining |
US8284012B2 (en) * | 2009-06-04 | 2012-10-09 | The Aerospace Corporation | Ultra-stable refractory high-power thin film resistors for space applications |
WO2011127327A2 (en) | 2010-04-07 | 2011-10-13 | Fei Company | Combination laser and charged particle beam system |
KR20200055871A (ko) * | 2018-11-13 | 2020-05-22 | 삼성디스플레이 주식회사 | 기판 식각 방법 |
Family Cites Families (34)
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US4108659A (en) * | 1972-08-25 | 1978-08-22 | European Rotogravure Association | Method of engraving printing plates of forms by means of energy beams, especially laser beams |
JPS5157283A (en) * | 1974-11-15 | 1976-05-19 | Nippon Electric Co | Handotaikibanno bunkatsuhoho |
FR2297143A1 (fr) * | 1975-01-09 | 1976-08-06 | Anvar | Procede de realisation de microgravures par faisceau laser |
US4300177A (en) * | 1975-07-17 | 1981-11-10 | U.S. Philips Corporation | Thin-film magnetic head for reading and writing information |
US4139409A (en) * | 1976-11-29 | 1979-02-13 | Macken John A | Laser engraved metal relief process |
JPS5437472A (en) * | 1977-08-29 | 1979-03-19 | Hitachi Ltd | Manufacture of semiconductor |
US4328410A (en) * | 1978-08-24 | 1982-05-04 | Slivinsky Sandra H | Laser skiving system |
JPS5582780A (en) * | 1978-12-16 | 1980-06-21 | Toshiba Corp | Surface processing method for metal or the like article |
US4379022A (en) * | 1979-05-08 | 1983-04-05 | International Business Machines Corporation | Method for maskless chemical machining |
CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
JPS57100620A (en) * | 1980-12-15 | 1982-06-22 | Hitachi Ltd | Manufacture of magnetic head |
JPS57102016A (en) * | 1980-12-17 | 1982-06-24 | Hitachi Ltd | Pattern generator |
US4389275A (en) * | 1982-03-25 | 1983-06-21 | The United States Of America As Represented By The Secretary Of The Army | Quartz resonator angle correction |
JPS59104287A (ja) * | 1982-12-07 | 1984-06-16 | Sumitomo Electric Ind Ltd | レ−ザ加工法 |
JPS59132132A (ja) * | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | 微細パタ−ンの形成方法 |
JPS59216126A (ja) * | 1983-05-24 | 1984-12-06 | Canon Inc | 液晶装置 |
JPS6092093A (ja) * | 1983-10-25 | 1985-05-23 | Sony Corp | レ−ザ加工方法 |
JPS6098511A (ja) * | 1983-11-04 | 1985-06-01 | Sony Corp | 磁気ヘツドの製造方法 |
US4603089A (en) * | 1983-11-21 | 1986-07-29 | Rockwell International Corporation | Laser welding of sandwich structures |
JPS60229283A (ja) * | 1984-04-27 | 1985-11-14 | Nec Corp | 磁気ヘツドスライダ溝の加工方法 |
EP0164564A1 (de) * | 1984-05-18 | 1985-12-18 | Siemens Aktiengesellschaft | Anordnung zur Sacklocherzeugung in einem laminierten Aufbau |
JPS60254406A (ja) * | 1984-05-31 | 1985-12-16 | Sony Corp | 薄膜磁気ヘツド |
JPS6130672A (ja) * | 1984-07-23 | 1986-02-12 | Hitachi Ltd | 選択的加工方法 |
JPS6176689A (ja) * | 1984-09-21 | 1986-04-19 | Nec Corp | 浮動ヘツドスライダの製造方法 |
JPS6195792A (ja) * | 1984-10-17 | 1986-05-14 | Hitachi Ltd | 印刷配線板の製造方法 |
JPH0664712B2 (ja) * | 1985-02-18 | 1994-08-22 | ソニー株式会社 | 薄膜磁気ヘツドの製造方法 |
JPS61276108A (ja) * | 1985-05-30 | 1986-12-06 | Sony Corp | 薄膜磁気ヘツドの製法 |
FR2585480B1 (fr) * | 1985-07-24 | 1994-01-07 | Ateq Corp | Generateur de modeles a laser |
JPS62254427A (ja) * | 1986-04-28 | 1987-11-06 | Toshiba Mach Co Ltd | レ−ザ描画装置 |
US4877480A (en) * | 1986-08-08 | 1989-10-31 | Digital Equipment Corporation | Lithographic technique using laser for fabrication of electronic components and the like |
EP0256938B1 (en) * | 1986-08-08 | 1995-10-04 | Quantum Corporation | Lithographic technique using laser for fabrication of electronic components and the like |
US4786358A (en) * | 1986-08-08 | 1988-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a pattern of a film on a substrate with a laser beam |
JPS6351641A (ja) * | 1986-08-21 | 1988-03-04 | Oki Electric Ind Co Ltd | 単結晶または多結晶Si膜の微細パタ−ン形成方法 |
JPS63175822A (ja) * | 1987-01-14 | 1988-07-20 | Fuji Photo Film Co Ltd | 光ビ−ム走査記録装置 |
-
1989
- 1989-06-22 US US07/369,714 patent/US5221422A/en not_active Expired - Fee Related
-
1990
- 1990-05-17 EP EP90305359A patent/EP0404340B1/en not_active Expired - Lifetime
- 1990-05-17 DE DE69030215T patent/DE69030215T2/de not_active Expired - Fee Related
- 1990-05-17 AT AT90305359T patent/ATE150555T1/de not_active IP Right Cessation
- 1990-06-05 CA CA002018262A patent/CA2018262C/en not_active Expired - Fee Related
- 1990-06-19 JP JP2161186A patent/JP2714475B2/ja not_active Expired - Lifetime
- 1990-06-21 KR KR1019900009209A patent/KR940007801B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69030215D1 (de) | 1997-04-24 |
CA2018262A1 (en) | 1990-12-22 |
DE69030215T2 (de) | 1997-08-14 |
JPH03135568A (ja) | 1991-06-10 |
US5221422A (en) | 1993-06-22 |
ATE150555T1 (de) | 1997-04-15 |
CA2018262C (en) | 1994-05-17 |
EP0404340B1 (en) | 1997-03-19 |
KR940007801B1 (ko) | 1994-08-25 |
JP2714475B2 (ja) | 1998-02-16 |
EP0404340A3 (en) | 1992-02-12 |
EP0404340A2 (en) | 1990-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19980810 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |