KR900700862A - 실리콘 베이스 질량 기류 센서 및 그 조립방법 - Google Patents
실리콘 베이스 질량 기류 센서 및 그 조립방법Info
- Publication number
- KR900700862A KR900700862A KR1019890701586A KR890701586A KR900700862A KR 900700862 A KR900700862 A KR 900700862A KR 1019890701586 A KR1019890701586 A KR 1019890701586A KR 890701586 A KR890701586 A KR 890701586A KR 900700862 A KR900700862 A KR 900700862A
- Authority
- KR
- South Korea
- Prior art keywords
- sensor
- semiconductor
- heating element
- sensor according
- semiconductor substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Volume Flow (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
내용없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 따른 질량 기류 센서의 평면도,
제2도는 제1도에 도시된 발명의 실시예에 따라 질량 기류센서의 간략화된 단면도,
제3a도는 제1도에 도시된 질량 기류 센서에 대한 조립공정을 나타낸다.
Claims (10)
- 절연성 다이아프램(1); 상기 다이아프램(1)에 배치된 박막가열소자(3); 상기 절연성 다이아프램(1)의 최소한의 주요부를 포함하는 열전도성 반도체 림(2); 및 상기 다이아프램(1)상의 배치된 최소한 일 박막센싱소자 (4,5)로 구성되는 것을 특징으로 하는 질량기류센서.
- 제1항에 있어서, 상기 절연성 다이아프램(1)이 상이한 열확산 계수를 가진 절연성 물질의 샌드위치 구조(32)를 포함하는 것을 특징으로 하는 센서.
- 제1항에 있어서, 최소한 일 센싱 소자(6,7)가 최소한 상기 반도체 림(2)에 부분적으로 배치되어 가열소자의 온도에 관련된 온도와 상기 최소한의 일 센싱 소자의 온도간의 차이가 모니터되어 기류율을 결정하는 것을 특징으로 하는 센서.
- 제1항에 있어서, 질량기류센서가 반도체 기판(8)으로부터 조립되고 절연성 다이아프램(1)아래에 반도체 기판이 제거되는 것을 특징으로 하는 센서.
- 제4항에 있어서, 반도체 기판 영역(8)이 반도체 림(2)아래에 배치되는 것을 특징으로 하는 센서.
- 제1항에 있어서, 상기 가열소자와 상기 반도체 림 간에 배치된 최소한 일 박막 센싱소자(4,5)를 더 포함하는 것을 특징으로 하는 센서.
- 제1항에 있어서, 상기 가열소자(3)가 센서의 세로축을 따라 중앙에 배치되고 다수의 센싱소자(5,6,4,7)는 상기 가열소자의 양측에 배치되는 것을 특징으로 하는 센서.
- 제1항에 있어서, 상기 반도체 림(2)이 p형 에칭된 스톱 실리콘을 포함하는 것을 특징으로 하는 센서.
- 제1항에 있어서, 상기 센서가 반도체기판에 조립되고 ; 상기 가열소자(3)에 에너지를 공급하고 상기 최소한 일 센싱소자(4,6)로부터 신호를 수신하는 상기 반도체 기판(8)에 조립된 판독 및 제어수단(20)을 더 포함하는 것을 특징으로 하는 센서.
- 제1항에 있어서, 상기 센서가 반도체 기판(8)에 조립되고 살기 가열소자(3)가 상기 기판의 전면에 배치되며 기판의 최소한 일측(18)이 가늘어진 것을 특징으로 하는 센서.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/137,299 US4888988A (en) | 1987-12-23 | 1987-12-23 | Silicon based mass airflow sensor and its fabrication method |
US137,299 | 1987-12-23 | ||
US137.299 | 1987-12-23 | ||
PCT/US1988/004511 WO1989005963A1 (en) | 1987-12-23 | 1988-12-16 | Silicon-based mass airflow sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900700862A true KR900700862A (ko) | 1990-08-17 |
KR960015067B1 KR960015067B1 (ko) | 1996-10-24 |
Family
ID=22476729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890701586A KR960015067B1 (ko) | 1987-12-23 | 1988-12-16 | 실리콘 베이스 질량 기류 센서 및 그 조립방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US4888988A (ko) |
EP (1) | EP0393141B1 (ko) |
JP (1) | JPH03502966A (ko) |
KR (1) | KR960015067B1 (ko) |
CA (1) | CA1325342C (ko) |
DE (1) | DE3872715T2 (ko) |
WO (1) | WO1989005963A1 (ko) |
Families Citing this family (70)
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-
1987
- 1987-12-23 US US07/137,299 patent/US4888988A/en not_active Expired - Fee Related
-
1988
- 1988-12-16 JP JP89501347A patent/JPH03502966A/ja active Pending
- 1988-12-16 KR KR1019890701586A patent/KR960015067B1/ko active IP Right Grant
- 1988-12-16 EP EP89901425A patent/EP0393141B1/en not_active Revoked
- 1988-12-16 WO PCT/US1988/004511 patent/WO1989005963A1/en not_active Application Discontinuation
- 1988-12-16 DE DE8989901425T patent/DE3872715T2/de not_active Expired - Lifetime
- 1988-12-21 CA CA000586588A patent/CA1325342C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0393141A1 (en) | 1990-10-24 |
JPH03502966A (ja) | 1991-07-04 |
DE3872715T2 (de) | 1992-12-03 |
US4888988A (en) | 1989-12-26 |
EP0393141B1 (en) | 1992-07-08 |
KR960015067B1 (ko) | 1996-10-24 |
CA1325342C (en) | 1993-12-21 |
DE3872715D1 (de) | 1992-08-13 |
WO1989005963A1 (en) | 1989-06-29 |
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