KR900700862A - 실리콘 베이스 질량 기류 센서 및 그 조립방법 - Google Patents

실리콘 베이스 질량 기류 센서 및 그 조립방법

Info

Publication number
KR900700862A
KR900700862A KR1019890701586A KR890701586A KR900700862A KR 900700862 A KR900700862 A KR 900700862A KR 1019890701586 A KR1019890701586 A KR 1019890701586A KR 890701586 A KR890701586 A KR 890701586A KR 900700862 A KR900700862 A KR 900700862A
Authority
KR
South Korea
Prior art keywords
sensor
semiconductor
heating element
sensor according
semiconductor substrate
Prior art date
Application number
KR1019890701586A
Other languages
English (en)
Other versions
KR960015067B1 (ko
Inventor
이기원
최일현
Original Assignee
원본미기재
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22476729&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR900700862(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 원본미기재, 지멘스 악티엔게젤샤프트 filed Critical 원본미기재
Publication of KR900700862A publication Critical patent/KR900700862A/ko
Application granted granted Critical
Publication of KR960015067B1 publication Critical patent/KR960015067B1/ko

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0048Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01FMEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845Micromachined devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Volume Flow (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

내용없음

Description

실리콘 베이스 질량 기류 센서 및 그 조립방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예에 따른 질량 기류 센서의 평면도,
제2도는 제1도에 도시된 발명의 실시예에 따라 질량 기류센서의 간략화된 단면도,
제3a도는 제1도에 도시된 질량 기류 센서에 대한 조립공정을 나타낸다.

Claims (10)

  1. 절연성 다이아프램(1); 상기 다이아프램(1)에 배치된 박막가열소자(3); 상기 절연성 다이아프램(1)의 최소한의 주요부를 포함하는 열전도성 반도체 림(2); 및 상기 다이아프램(1)상의 배치된 최소한 일 박막센싱소자 (4,5)로 구성되는 것을 특징으로 하는 질량기류센서.
  2. 제1항에 있어서, 상기 절연성 다이아프램(1)이 상이한 열확산 계수를 가진 절연성 물질의 샌드위치 구조(32)를 포함하는 것을 특징으로 하는 센서.
  3. 제1항에 있어서, 최소한 일 센싱 소자(6,7)가 최소한 상기 반도체 림(2)에 부분적으로 배치되어 가열소자의 온도에 관련된 온도와 상기 최소한의 일 센싱 소자의 온도간의 차이가 모니터되어 기류율을 결정하는 것을 특징으로 하는 센서.
  4. 제1항에 있어서, 질량기류센서가 반도체 기판(8)으로부터 조립되고 절연성 다이아프램(1)아래에 반도체 기판이 제거되는 것을 특징으로 하는 센서.
  5. 제4항에 있어서, 반도체 기판 영역(8)이 반도체 림(2)아래에 배치되는 것을 특징으로 하는 센서.
  6. 제1항에 있어서, 상기 가열소자와 상기 반도체 림 간에 배치된 최소한 일 박막 센싱소자(4,5)를 더 포함하는 것을 특징으로 하는 센서.
  7. 제1항에 있어서, 상기 가열소자(3)가 센서의 세로축을 따라 중앙에 배치되고 다수의 센싱소자(5,6,4,7)는 상기 가열소자의 양측에 배치되는 것을 특징으로 하는 센서.
  8. 제1항에 있어서, 상기 반도체 림(2)이 p형 에칭된 스톱 실리콘을 포함하는 것을 특징으로 하는 센서.
  9. 제1항에 있어서, 상기 센서가 반도체기판에 조립되고 ; 상기 가열소자(3)에 에너지를 공급하고 상기 최소한 일 센싱소자(4,6)로부터 신호를 수신하는 상기 반도체 기판(8)에 조립된 판독 및 제어수단(20)을 더 포함하는 것을 특징으로 하는 센서.
  10. 제1항에 있어서, 상기 센서가 반도체 기판(8)에 조립되고 살기 가열소자(3)가 상기 기판의 전면에 배치되며 기판의 최소한 일측(18)이 가늘어진 것을 특징으로 하는 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890701586A 1987-12-23 1988-12-16 실리콘 베이스 질량 기류 센서 및 그 조립방법 KR960015067B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/137,299 US4888988A (en) 1987-12-23 1987-12-23 Silicon based mass airflow sensor and its fabrication method
US137,299 1987-12-23
US137.299 1987-12-23
PCT/US1988/004511 WO1989005963A1 (en) 1987-12-23 1988-12-16 Silicon-based mass airflow sensor

Publications (2)

Publication Number Publication Date
KR900700862A true KR900700862A (ko) 1990-08-17
KR960015067B1 KR960015067B1 (ko) 1996-10-24

Family

ID=22476729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890701586A KR960015067B1 (ko) 1987-12-23 1988-12-16 실리콘 베이스 질량 기류 센서 및 그 조립방법

Country Status (7)

Country Link
US (1) US4888988A (ko)
EP (1) EP0393141B1 (ko)
JP (1) JPH03502966A (ko)
KR (1) KR960015067B1 (ko)
CA (1) CA1325342C (ko)
DE (1) DE3872715T2 (ko)
WO (1) WO1989005963A1 (ko)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0452134B1 (en) * 1990-04-13 1995-08-23 Yamatake-Honeywell Co. Ltd. Diaphragm-type sensor
DE4012080A1 (de) * 1990-04-14 1991-10-17 Bosch Gmbh Robert Verfahren zum aufbau von mikromechanischen sensoren
US5056362A (en) * 1990-07-25 1991-10-15 Siemens Automotive L.P. Strengthening a silicon micromachined mass air flow sensor in the region of its hot element
US5431806A (en) * 1990-09-17 1995-07-11 Fujitsu Limited Oxygen electrode and temperature sensor
US5837113A (en) * 1990-12-06 1998-11-17 Fujitsu Limited Small glass electrode
FR2670579A1 (fr) * 1990-12-14 1992-06-19 Schlumberger Ind Sa Capteur semi-conducteur de debit.
DE4041578C2 (de) * 1990-12-22 1997-07-17 Bosch Gmbh Robert Verfahren zur Herstellung eines Sensors zur Messung der Geschwindigkeit bzw. der Durchflußmenge eines strömenden Mediums
JP2784286B2 (ja) * 1991-12-09 1998-08-06 三菱電機株式会社 半導体センサー装置の製造方法
DE4202733C2 (de) * 1992-01-31 1995-06-08 Bosch Gmbh Robert Temperatursensor
US5263380A (en) * 1992-02-18 1993-11-23 General Motors Corporation Differential AC anemometer
DE4205207A1 (de) * 1992-02-20 1993-08-26 Siemens Ag Vorrichtung zur messung einer gas- oder fluessigkeitsstroemung
DE4215722C2 (de) * 1992-05-13 1997-02-13 Bosch Gmbh Robert Sensorsubstrat mit einer Membran und Verfahren zu deren Herstellung
DE4219454C2 (de) * 1992-06-13 1995-09-28 Bosch Gmbh Robert Massenflußsensor
DE4228484C2 (de) * 1992-08-27 1998-10-01 Bosch Gmbh Robert Temperaturfühler
DE4233153C2 (de) * 1992-10-02 1995-08-17 Lang Apparatebau Gmbh Kalorimetrischer Durchflußmesser und Verfahren zu seiner Herstellung
DE4338891A1 (de) * 1993-02-25 1994-09-01 Bosch Gmbh Robert Massenflußsensor
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
JP3310430B2 (ja) * 1993-11-26 2002-08-05 株式会社半導体エネルギー研究所 計測装置および計測方法
DE19509555B4 (de) * 1995-03-16 2006-01-19 Robert Bosch Gmbh Durchflußsensor
DE19511590A1 (de) * 1995-03-29 1996-10-02 Bosch Gmbh Robert Meßelement für einen Durchflußsensor und Herstellungsverfahren
DE19524634B4 (de) * 1995-07-06 2006-03-30 Robert Bosch Gmbh Vorrichtung zur Messung der Masse eines strömenden Mediums
DE19527861B4 (de) * 1995-07-29 2010-09-30 Robert Bosch Gmbh Massenflusssensor sowie Verfahren zur Herstellung
DE19601592C1 (de) * 1996-01-18 1997-05-07 Bosch Gmbh Robert Sensor und Verfahren zur Herstellung eines Sensors
AT2267U1 (de) * 1997-02-04 1998-07-27 E & E Elektronik Gmbh Heissfilmanemometer sowie verfahren zu seiner herstellung
WO1998036247A1 (de) * 1997-02-14 1998-08-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Strömungssensorkomponente
DE19710559A1 (de) * 1997-03-14 1998-09-17 Bosch Gmbh Robert Sensor mit einem Dünnfilmelement
DE19735666A1 (de) 1997-08-16 1999-02-18 Bosch Gmbh Robert Massenflußsensor
DE19744228C1 (de) * 1997-10-07 1998-11-26 Bosch Gmbh Robert Sensor mit einer Membran
US6125695A (en) * 1997-10-13 2000-10-03 Teledyne Brown Engineering, Inc. Method and apparatus for measuring a fluid
JP3355127B2 (ja) * 1998-02-23 2002-12-09 株式会社日立製作所 熱式空気流量センサ
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
US6290388B1 (en) * 1998-03-06 2001-09-18 The Trustees Of The University Of Pennsylvania Multi-purpose integrated intensive variable sensor
US6032527A (en) * 1998-07-01 2000-03-07 Memsys, Inc. Solid state microanemometer
US6229322B1 (en) * 1998-08-21 2001-05-08 Micron Technology, Inc. Electronic device workpiece processing apparatus and method of communicating signals within an electronic device workpiece processing apparatus
GB9904428D0 (en) * 1999-02-26 1999-04-21 Delphi Tech Inc Mass flow sensor with ambient sensor
TW411574B (en) * 1999-06-09 2000-11-11 Taiwan Semiconductor Mfg Self-aligned etching process
JP3587734B2 (ja) * 1999-06-30 2004-11-10 株式会社日立製作所 熱式空気流量センサ
JP3461469B2 (ja) * 1999-07-27 2003-10-27 株式会社日立製作所 熱式空気流量センサ及び内燃機関制御装置
US6626037B1 (en) * 1999-09-03 2003-09-30 Denso Corporation Thermal flow sensor having improved sensing range
JP4581215B2 (ja) 2000-10-13 2010-11-17 株式会社デンソー 薄膜センシング部を有する半導体装置の製造方法
JP3825242B2 (ja) * 2000-10-17 2006-09-27 株式会社山武 フローセンサ
US6631638B2 (en) * 2001-01-30 2003-10-14 Rosemount Aerospace Inc. Fluid flow sensor
DE10111840C2 (de) * 2001-03-13 2003-06-05 Bosch Gmbh Robert Verfahren zur Vermeidung von Verschmutzungen auf einem Sensorchip und Verwendung eines Zusatzheizers auf einem Sensorchip
DE10118781B4 (de) * 2001-04-18 2005-04-21 Robert Bosch Gmbh Verfahren zur Vermeidung von Verschmutzungen auf einem Sensorchip und Verwendung einer Potentialfläche auf einem Sensorchip
US6508117B1 (en) 2001-07-12 2003-01-21 Delphi Technologies, Inc. Thermally balanced mass air flow sensor
JP5138134B2 (ja) * 2001-07-16 2013-02-06 株式会社デンソー 薄膜式センサの製造方法ならびにフローセンサの製造方法
US6759265B2 (en) * 2001-12-12 2004-07-06 Robert Bosch Gmbh Method for producing diaphragm sensor unit and diaphragm sensor unit
DE10200558A1 (de) * 2002-01-09 2003-07-24 Bosch Gmbh Robert Temperatursensor
EP1365216B1 (en) * 2002-05-10 2018-01-17 Azbil Corporation Flow sensor and method of manufacturing the same
DE10232072B4 (de) * 2002-07-15 2005-03-24 Robert Bosch Gmbh Verfahren zur Reinigung eines von einem Gasstrom umströmten Messelementes
JP3718198B2 (ja) * 2003-02-26 2005-11-16 株式会社日立製作所 流量センサ
WO2004080885A2 (de) * 2003-03-11 2004-09-23 Robert Bosch Gmbh Membransensor
US6859330B2 (en) * 2003-06-04 2005-02-22 Intel Corporation Micromachined pellicle splitters and tunable laser modules incorporating same
JP2007525622A (ja) * 2003-10-03 2007-09-06 スワゲロック カンパニー 流れ制御デバイスのためのダイヤフラムモニタリング
JP4504037B2 (ja) * 2004-02-02 2010-07-14 大日本印刷株式会社 光学素子
JP5153996B2 (ja) * 2005-01-26 2013-02-27 日立オートモティブシステムズ株式会社 熱式流量計測装置
JP5108234B2 (ja) * 2005-02-07 2012-12-26 日本特殊陶業株式会社 マイクロヒータ及びセンサ
JP4966526B2 (ja) 2005-09-07 2012-07-04 日立オートモティブシステムズ株式会社 流量センサ
JP2008516252A (ja) * 2005-09-20 2008-05-15 ビ−エイイ− システムズ パブリック リミテッド カンパニ− センサー装置
EP2154713B1 (en) * 2008-08-11 2013-01-02 Sensirion AG Method for manufacturing a sensor device with a stress relief layer
JP2012026856A (ja) * 2010-07-23 2012-02-09 Hitachi Automotive Systems Ltd 熱式空気流量センサ
JP5372976B2 (ja) * 2011-01-31 2013-12-18 日立オートモティブシステムズ株式会社 熱式流量センサ
WO2013080239A1 (ja) * 2011-11-28 2013-06-06 日立オートモティブシステムズ株式会社 熱式空気流量センサ
JP5648021B2 (ja) 2012-06-29 2015-01-07 日立オートモティブシステムズ株式会社 熱式空気流量センサ
US10655989B2 (en) 2017-09-12 2020-05-19 Silicon Microstructures, Inc. Pressure sensor cap having flow path with dimension variation
DE102018107181A1 (de) * 2018-03-26 2019-09-26 MIM Medizinische Instrumente & Monotoring GmbH Atemstromsensor
US11268839B2 (en) 2019-03-05 2022-03-08 Measurement Specialties, Inc. Resistive flow sensor
JP7134920B2 (ja) * 2019-06-17 2022-09-12 日立Astemo株式会社 熱式センサ装置
US11452198B2 (en) 2019-07-25 2022-09-20 Borgwarner, Inc. Thermally insulated printed circuit board
CN113049053B (zh) * 2021-03-15 2022-12-30 青岛芯笙微纳电子科技有限公司 一种高性能mems流量传感器及其制备方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936792B1 (ko) * 1970-10-15 1974-10-03
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
DE2557079C2 (de) * 1975-12-18 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen einer Maskierungsschicht
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
US4239599A (en) * 1978-08-23 1980-12-16 Occidental Petroleum Corporation Process for stripping oil from fluidized ash and char particles to prepare the particles for decarbonization
US4227975A (en) * 1979-01-29 1980-10-14 Bell Telephone Laboratories, Incorporated Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors
DE2925975A1 (de) * 1979-06-27 1981-01-15 Siemens Ag Mengendurchflussmesser
US4471647A (en) * 1980-04-18 1984-09-18 Board Of Regents Of Stanford University Gas chromatography system and detector and method
US4348546A (en) * 1980-08-25 1982-09-07 Spire Corporation Front surface metallization and encapsulation of solar cells
US4372803A (en) * 1980-09-26 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Method for etch thinning silicon devices
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
US4472239A (en) * 1981-10-09 1984-09-18 Honeywell, Inc. Method of making semiconductor device
US4624137A (en) * 1981-10-09 1986-11-25 Honeywell Inc. Semiconductor device
US4683159A (en) * 1982-09-30 1987-07-28 Honeywell Inc. Semiconductor device structure and processing
US4548078A (en) * 1982-09-30 1985-10-22 Honeywell Inc. Integral flow sensor and channel assembly
US4478076A (en) * 1982-09-30 1984-10-23 Honeywell Inc. Flow sensor
US4478077A (en) * 1982-09-30 1984-10-23 Honeywell Inc. Flow sensor
US4501144A (en) * 1982-09-30 1985-02-26 Honeywell Inc. Flow sensor
US4651564A (en) * 1982-09-30 1987-03-24 Honeywell Inc. Semiconductor device
JPS5965216A (ja) * 1982-10-06 1984-04-13 Hitachi Ltd 熱式流量計
JPS6013220A (ja) * 1983-07-04 1985-01-23 Esutetsuku:Kk ガス流量センサ−及びその製造方法
US4542650A (en) * 1983-08-26 1985-09-24 Innovus Thermal mass flow meter
US4633578A (en) * 1983-12-01 1987-01-06 Aine Harry E Miniature thermal fluid flow sensors and batch methods of making same
US4829818A (en) * 1983-12-27 1989-05-16 Honeywell Inc. Flow sensor housing
US4594889A (en) * 1984-12-06 1986-06-17 Ford Motor Company Mass airflow sensor
JPS61170618A (ja) * 1985-01-24 1986-08-01 Toyota Central Res & Dev Lab Inc 流速検出用半導体センサ
US4614119A (en) * 1985-03-08 1986-09-30 The Foxboro Company Resonant hollow beam and method
US4685331A (en) * 1985-04-10 1987-08-11 Innovus Thermal mass flowmeter and controller
GB2179748B (en) * 1985-08-20 1989-09-06 Sharp Kk Thermal flow sensor
US4672354A (en) * 1985-12-05 1987-06-09 Kulite Semiconductor Products, Inc. Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
US4682503A (en) * 1986-05-16 1987-07-28 Honeywell Inc. Microscopic size, thermal conductivity type, air or gas absolute pressure sensor

Also Published As

Publication number Publication date
EP0393141A1 (en) 1990-10-24
JPH03502966A (ja) 1991-07-04
DE3872715T2 (de) 1992-12-03
US4888988A (en) 1989-12-26
EP0393141B1 (en) 1992-07-08
KR960015067B1 (ko) 1996-10-24
CA1325342C (en) 1993-12-21
DE3872715D1 (de) 1992-08-13
WO1989005963A1 (en) 1989-06-29

Similar Documents

Publication Publication Date Title
KR900700862A (ko) 실리콘 베이스 질량 기류 센서 및 그 조립방법
KR100515422B1 (ko) 질량유량센서
US5048336A (en) Moisture-sensitive device
KR920002993A (ko) 온도센서
KR900700860A (ko) 질량기류센서용 제어 및 검출회로
KR950001291A (ko) 열전도도 측정장치 및 방법
JPS6491062A (en) Mass air flow sensor
JPH02205729A (ja) 赤外線センサ
KR970002295A (ko) 가스센서
US4930347A (en) Solid state microanemometer with improved sensitivity and response time
KR100523516B1 (ko) 박막형 이산화탄소 가스 센서
JPS62266418A (ja) 媒体の流速を測定する装置およびその製造法
JPH01203957A (ja) 温度感応性半導体デバイスを備えるセンサ装置に対する吊り構造
US5140854A (en) Intake air quantity measuring apparatus
JPH06160203A (ja) 流動媒体の温度を測定するための温度センサー
KR920701789A (ko) 공기 부피 측정방법 및 장치
GB2240627A (en) Microbridge flow sensor
JP2003098012A (ja) 温度測定装置およびこれ用いたガス濃度測定装置
JPH0750679Y2 (ja) サーモパイル型赤外線センサ
JPH0612493Y2 (ja) マイクロブリッジフローセンサ
KR100370066B1 (ko) 마이크로 절대 습도 센서 및 제조 방법
KR100331809B1 (ko) 박막형 절대습도 센서
KR960018552A (ko) 연소압센서
KR950027392A (ko) 박막형 가스센서 및 이의 제조방법
JPH10185641A (ja) センサ、センサ素子支持基板及び基板体

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee