KR900015266A - 화학증착법 - Google Patents

화학증착법 Download PDF

Info

Publication number
KR900015266A
KR900015266A KR1019900003258A KR900003258A KR900015266A KR 900015266 A KR900015266 A KR 900015266A KR 1019900003258 A KR1019900003258 A KR 1019900003258A KR 900003258 A KR900003258 A KR 900003258A KR 900015266 A KR900015266 A KR 900015266A
Authority
KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
layer
deposition method
chamber
Prior art date
Application number
KR1019900003258A
Other languages
English (en)
Other versions
KR940011741B1 (ko
Inventor
아쓰히로 쓰꾸네
겐지 고오야마
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR900015266A publication Critical patent/KR900015266A/ko
Application granted granted Critical
Publication of KR940011741B1 publication Critical patent/KR940011741B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

내용 없음.

Description

화학증착법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 CVD 방법을 시행하는데 사용되는 플라즈마 CVD 장치를 도시하는 다이어그램,
제3도는 본 발명에 따른 CVD 방법의 두번째 실시예에 의해 형성된 SiO2층에 대해 행해진 SIMS의 분석결과의 그래프,
제4도는 본 발명에 따른 CVD 방법의 두번째 실시예에 의해 형성된 FSG층에 대해 행해진 SIMS의 분석결과의 그래프.

Claims (7)

  1. 플루오르를 포함하는 가스를 사용하여 체임버(2)내에 플라즈마 셀프-클리닝을 행하는 단계를 포함하는 화학증착법에 있어서, 실리콘 및 질소를 포함하는 물질의 제1층에 의해 체임버(2)의 내부를 피복하는 단계, 그리고 화학증착법에 의해 체임버의 내부의 소정 표면상에 제2층을 형성하는 단계가 더 제공되며, 상기 제2층은 상기 제1층에 포함된 질소의 양보다 적은 양의 질소를 포함하는 물질로 만들어지는 것을 특징으로 하는 화학증착법.
  2. 제1항에 있어서, 플라즈마 셀프-클리닝을 시행하는 단계가 NF3가스를 사용하는 것을 특징으로 하는 화학증착법.
  3. 제1항 또는 제2항에 있어서, 체임버(2)의 내부를 피복하는 상기 단계가 SiON, SiN 및 SiBN을 포함하는 물질의 군으로부터 선택된 물질로 만들어진 제1층을 피복하는 것을 특징으로 하는 화학증착법.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 제2층을 형성하는 상기 단계가 이산화규소(SiO2)및 포스포-실리케이트 글래스(PSG)를 포함하는 물질의 군으로부터 선택된 물질로부터 제2층을 형성하는 것을 특징으로 하는 화학증착법.
  5. 제4항에 있어서, 상기 소정의 표면이 규소(Si)로 만들어지는 것을 특징으로 하는 화학증착법.
  6. 제1항 내지 제5항중 어느 한 항에 있어서 체임버(2)의 내부를 피복하는 상기 단계가 제1층을 적어도 약 1000Å의 두께로 피복하는 것을 특징으로 하는 화학증착법.
  7. 제1항에 있어서, 상기 제2층이 질소를 포함하지 않는 물질로 만들어지는 것을 특징으로 하는 화학증착법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003258A 1989-03-14 1990-03-12 화학증착법 KR940011741B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-61508 1989-03-14
JP1061508A JP2708533B2 (ja) 1989-03-14 1989-03-14 Ｃｖｄ装置の残留ガス除去方法

Publications (2)

Publication Number Publication Date
KR900015266A true KR900015266A (ko) 1990-10-26
KR940011741B1 KR940011741B1 (ko) 1994-12-23

Family

ID=13173105

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003258A KR940011741B1 (ko) 1989-03-14 1990-03-12 화학증착법

Country Status (5)

Country Link
US (1) US5041311A (ko)
EP (1) EP0387656B1 (ko)
JP (1) JP2708533B2 (ko)
KR (1) KR940011741B1 (ko)
DE (1) DE69004715D1 (ko)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045346A (en) * 1990-07-31 1991-09-03 Gte Laboratories Incorporated Method of depositing fluorinated silicon nitride
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
JPH06349916A (ja) * 1993-04-30 1994-12-22 Applied Materials Inc 基板上の粒子検出方法及び装置
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
JPH0793276B2 (ja) * 1993-12-14 1995-10-09 アプライド マテリアルズ インコーポレイテッド 薄膜形成前処理方法および薄膜形成方法
JPH0799744B2 (ja) * 1993-12-27 1995-10-25 アプライド マテリアルズ インコーポレイテッド 薄膜形成方法
EP0661731B1 (en) * 1993-12-28 2000-05-31 Applied Materials, Inc. A single chamber CVD process for thin film transistors
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
JP3471082B2 (ja) * 1994-07-15 2003-11-25 株式会社東芝 Ｃｖｄ装置の反応室のコーティング方法
JPH0867984A (ja) * 1994-08-26 1996-03-12 Iwatani Internatl Corp プラズマｃｖｄでのクリーニング方法
US6127261A (en) * 1995-11-16 2000-10-03 Advanced Micro Devices, Inc. Method of fabricating an integrated circuit including a tri-layer pre-metal interlayer dielectric compatible with advanced CMOS technologies
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US5843838A (en) * 1995-12-27 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Modified clean recipe to suppress formation of BPSG bubble
US5810937A (en) * 1996-03-13 1998-09-22 Applied Materials, Inc. Using ceramic wafer to protect susceptor during cleaning of a processing chamber
JP3400293B2 (ja) * 1996-05-01 2003-04-28 株式会社東芝 Ｃｖｄ装置及びそのクリーニング方法
US5811356A (en) * 1996-08-19 1998-09-22 Applied Materials, Inc. Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
EP0933806A4 (en) * 1996-11-14 2003-01-22 Tokyo Electron Ltd CLEANING A PLASMA APPARATUS AND TREATMENT
US5937323A (en) * 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
TW460943B (en) * 1997-06-11 2001-10-21 Applied Materials Inc Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
TW416100B (en) * 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
JPH1197426A (ja) * 1997-09-25 1999-04-09 Hitachi Ltd プラズマ処理方法およびその装置並びに半導体基板の製造方法
US6624064B1 (en) * 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US6323119B1 (en) 1997-10-10 2001-11-27 Applied Materials, Inc. CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application
US5970383A (en) * 1997-12-17 1999-10-19 Advanced Micro Devices Method of manufacturing a semiconductor device with improved control of deposition layer thickness
US6635569B1 (en) 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6067999A (en) * 1998-04-23 2000-05-30 International Business Machines Corporation Method for deposition tool cleaning
DE19844025A1 (de) * 1998-09-25 2000-03-30 Inst Oberflaechenmodifizierung Reaktives Ionen(strahl)ätzen von Oberflächen
FR2784228B1 (fr) * 1998-10-01 2002-01-11 France Telecom PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
US20020033183A1 (en) * 1999-05-29 2002-03-21 Sheng Sun Method and apparatus for enhanced chamber cleaning
JP4570186B2 (ja) * 1999-11-04 2010-10-27 キヤノンアネルバ株式会社 プラズマクリーニング方法
US6426015B1 (en) * 1999-12-14 2002-07-30 Applied Materials, Inc. Method of reducing undesired etching of insulation due to elevated boron concentrations
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW522475B (en) * 2000-05-12 2003-03-01 Applied Materials Inc Method for improving chemical vapor deposition processing
KR20030031183A (ko) * 2000-09-15 2003-04-18 맷슨 써멀 프로덕츠 게엠베하 열 처리된 반도체 기판상의 오염을 감소시키기 위한 장치및 방법
JP4897159B2 (ja) * 2001-08-03 2012-03-14 株式会社日立国際電気 半導体装置の製造方法
JP4700236B2 (ja) * 2001-08-03 2011-06-15 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
US20050221020A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method of improving the wafer to wafer uniformity and defectivity of a deposited dielectric film
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
KR100755116B1 (ko) * 2006-08-01 2007-09-04 동부일렉트로닉스 주식회사 Ｐｅｃｖｄ 실리콘 나이트라이드막 형성 방법
JP5202372B2 (ja) * 2008-03-14 2013-06-05 東京エレクトロン株式会社 成膜装置のメタル汚染低減方法、半導体装置の製造方法、記憶媒体及び成膜装置
CN103219227A (zh) * 2013-04-09 2013-07-24 上海华力微电子有限公司 等离子体清洗方法
CN103219226B (zh) * 2013-04-09 2015-12-02 上海华力微电子有限公司 降低在沉积非晶碳膜时晶圆背面金属污染的方法
TWI567823B (zh) * 2014-12-22 2017-01-21 群創光電股份有限公司 顯示面板與其製造方法
JP2023513102A (ja) * 2020-02-07 2023-03-30 ラム リサーチ コーポレーション 処理チャンバのその場（ｉｎ ｓｉｔｕ）表面コーティング

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4058638A (en) * 1974-12-19 1977-11-15 Texas Instruments Incorporated Method of optical thin film coating
NL7906996A (nl) * 1979-09-20 1981-03-24 Philips Nv Werkwijze voor het reinigen van een reaktor.
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4579609A (en) * 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
ES2081806T3 (es) * 1987-06-26 1996-03-16 Applied Materials Inc Procedimiento de autolimpieza de una camara de reactor.

Also Published As

Publication number Publication date
EP0387656B1 (en) 1993-11-24
EP0387656A1 (en) 1990-09-19
KR940011741B1 (ko) 1994-12-23
US5041311A (en) 1991-08-20
JPH02240267A (ja) 1990-09-25
JP2708533B2 (ja) 1998-02-04
DE69004715D1 (de) 1994-01-05

Similar Documents

Publication Publication Date Title
KR900015266A (ko) 화학증착법
US5635102A (en) Highly selective silicon oxide etching method
KR920007116A (ko) 내층 절연막 형성방법
US4992299A (en) Deposition of silicon nitride films from azidosilane sources
DE60123813D1 (de) Sperrschicht für glasartige werkstoffe
KR890011070A (ko) 세라믹 피복물을 지지체위에 형성하는 방법
KR970020217A (ko) Si-O 함유 피복물의 침착방법
DE3885034T2 (de) Eingangsverteiler und Verfahren zur Steigerung der Gasdissoziation und zur PECVD von dielektrischen Filmen.
KR950008733A (ko) 금속산화막의 형성방법
KR960032641A (ko) 반도체장치 및 절연막의 형성방법
KR940006197A (ko) 반도체장치의 콘택부 형성방법
US5288527A (en) Silicon nitride thin films with improved properties
KR970027019A (ko) 전자장치 보호용 피복물
KR950703073A (ko) 결정성 질화규소의 저온 화학적 증기증착 방법(molybdenum enhanced lowtemperature deposition of crystalline silicon nitride)
KR960041416A (ko) 실리콘 산화물층의 증착 방법
KR890012378A (ko) 실리콘계 보호막을 사용한 반도체 장치의 제조방법
KR870011702A (ko) 비결정 실리콘 전계효과 트랜지스터의 백 채널표면 안정화 방법
KR920005271A (ko) 반도체장치의 제조방법
WO1995004854A3 (de) Verfahren zur plasmabehandlung von antiballistisch wirksamen materialien
KR900017144A (ko) 콜드웰 cvd 반응기에서의 티타늄 질화물 증착장치 및 그 방법
KR910005393A (ko) 집적 회로 구조물에 3족/5족-도핑된 균일한 두께를 가진 규산염 유리 피복을 형성하기 위한 저온 저압 열 cvd법
JPS57192032A (en) Forming method for insulating film
Ohshita et al. Tris-diethylamino-silane Decomposition due to Tetrakis-diethylamido-hafnium in Hf1-xSixO2 Chemical Vapor Deposition
KR840000980A (ko) 반도체막의 제조 방법
KR910019118A (ko) 반도체 웨이퍼 상에 규화 티타늄을 형성시키는 공정 집적시스템

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E801 Decision on dismissal of amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20091210

Year of fee payment: 16

EXPY Expiration of term