KR950008733A - 금속산화막의 형성방법 - Google Patents

금속산화막의 형성방법 Download PDF

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KR950008733A
KR950008733A KR1019940023003A KR19940023003A KR950008733A KR 950008733 A KR950008733 A KR 950008733A KR 1019940023003 A KR1019940023003 A KR 1019940023003A KR 19940023003 A KR19940023003 A KR 19940023003A KR 950008733 A KR950008733 A KR 950008733A
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oxide film
metal oxide
gas containing
forming
compound
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게이타로 이마이
마사히로 기요토시
하루오 오카노
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사토 후미오
가부시키가이샤 도시바
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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    • H10B—ELECTRONIC MEMORY DEVICES
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    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates

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Abstract

본 발명은 탄소 및 할로겐으로 이루어진 군에서 선택된 적어도 하나를 갖춘 금속화합물을 함유한 가스를 기판을 수용하는 공정실내로 도입하는 공정과, 수산기를 갖춘 화합물을 함유한 가스를 상기 공정실내로 도입하는 공정, 플라즈마상태로 된 산소를 함유한 가스를 상기 공정실내로 도입하는 공정 및, 상기 금속화합물을 함유한 가스, 상기 수산기를 갖춘 화합물을 함유한 가스 및 상기 플라즈마상태로 된 산소를 함유한 가스를 이용하여 기판상에 금속산화막을 형성하는 공정을 구비한 금속산화막의 형성방법을 제공한다.
※ 선택도 : 제5도 ~ 제7도

Description

금속산화막의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 페로브스카이트형 결정구조를 나타낸 도면,
제2도는 퇴적온도와 불소(F)/스트론듐(Sr) 비간의 관계를 나타낸 그래프,
제3도는 CH3OH/O2의 유량비와 막중의 불소의 양간의 관계를 나타낸 그래프,
제4도는 CH3OH/O2의 유량비와 막중의 탄소의 양간의 관계를 나타낸 그래프,
제5도는 본 발명의 제1실시예에 따른 금속산화막의 성막(成膜)장치의 개략구성을 나타낸 모식도.

Claims (14)

  1. 탄소 및 할로겐으로 이루어진 군에서 선택된 적어도 하나를 갖춘 금속화합물을 함유한 가스를 기판을 수용하는 공정실내로 도입하는 공정과, 수산기를 갖춘 화합물을 함유한 가스를 상기 공정실내로 도입하는 공정, 플라즈마상태로 된 산소를 함유한 가스를 상기 공정실내로 도입하는 공정 및, 상기 금속화합물을 함유한 가스, 상기 수산기를 갖춘 화합물을 함유한 가스 및 상기 플라즈마상태로 된 산소를 함유한 가스를 이용하여 기판상에 금속산화막을 형성하는 공정을 구비한 것을 특징으로 하는 금속산화막의 형성방법.
  2. 제1항에 있어서, 상기 수산기를 갖춘 화합물이 알콜 또는 H2O인 것을 특징으로 하는 금속산화막의 형성방법.
  3. 제1항에 있어서, 상기 수산기를 갖춘 화합물을 함유한 가스가 금속화합물을 함유한 가스보다도 과잉으로 상기 공정실내로 도입되는 것을 특징으로 하는 금속산화막의 형성방법.
  4. 제1항에 있어서, 상기 할로겐이 불소인 것을 특징으로 하는 금속산화막의 형성방법.
  5. 제1항에 있어서, 상기 금속산화막이 페로브스카이트 결정구조를 갖는 재료로 형성된 것을 특징으로 하는 금속산화막의 형성방법.
  6. 제5항에 있어서, 상기 페로브스카이트 결정구조를 갖는 재료가 티탄산스트론듐, 티탄산 바륨, 티탄산 칼슘 및 이들 화합물의 혼합물로 이루어진 군에서 선택된 것을 특징으로 하는 금속산화막의 형성방법.
  7. 제1항에 있어서, 상기 금속산화막이 초전도체재료로 형성된 것을 특징으로 하는 금속산화막의 형성방법.
  8. 탄소 및 할로겐으로 이루어진 군에서 선택된 적어도 하나를 갖춘 금속화합물을 함유한 가스를 기판을 수용하는 공정실내로 도입하는 공정과, 수산기를 갖춘 화합물을 함유한 가스 및 산소를 함유한 가스로 이루어진 혼합가스를 준비하는 공정, 상기 혼합가스를 방전하여 플라즈마화하는 공정, 상기 프라즈마상태로 된 혼합가스를 상기 공정실내로 도입하는 공정 및, 플라즈마를 이용하여 기판상에 금속산화막을 형성하는 공정을 구비한 것을 특징으로 하는 금속산화막의 형성방법.
  9. 제8항에 있어서, 상기 수산기를 갖춘 화합물이 알콜 또는 H2O인 것을 특징으로 하는 금속산화막의 형성방법.
  10. 제8항에 있어서, 상기 수산기를 갖춘 화합물을 함유한 가스가 금속화합물을 함유한 가스보다도 과잉으로 상기 공정실내로 도입되는 것을 특징으로 하는 금속산화막의 형성방법.
  11. 제8항에 있어서, 상기 할로겐이 불소인 것을 특징으로 하는 금속산화막의 형성방법.
  12. 제8항에 있어서, 상기 금속산화막이 페로브스카이트 결정구조를 갖는 것을 특징으로 하는 금속산화막의 형성방법.
  13. 제12항에 있어서, 상기 페로브스카이트 결정구조를 갖는 재료가 티탄산 스트론듐, 티탄산 바륨, 티탄산 칼슘 및 이들 화합물의 혼합물로 이루어진 군에서 선택된 것을 특징으로 하는 금속산화막의 형성방법.
  14. 제8항에 있어서, 상기 금속산화막이 초전도체재료로 형성된 것을 특징으로 하는 금속산화막의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940023003A 1993-09-14 1994-09-13 금속산화막의 형성방법 KR0139876B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP5229277A JPH0786270A (ja) 1993-09-14 1993-09-14 金属酸化膜の形成方法
JP93-229277 1993-09-14
JP94-60400 1994-03-30
JP6060400A JPH07273216A (ja) 1994-03-30 1994-03-30 金属酸化膜の形成方法

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KR950008733A true KR950008733A (ko) 1995-04-19
KR0139876B1 KR0139876B1 (ko) 1998-08-17

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Publication number Priority date Publication date Assignee Title
KR100537679B1 (ko) * 1996-07-12 2006-04-06 동경 엘렉트론 주식회사 성막장치 및 성막방법
US7037560B1 (en) 1996-07-12 2006-05-02 Tokyo Electron Limited Film forming method, and film modifying method

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US5686151A (en) 1997-11-11

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