KR970001612A - 안정한 플루오르화 teos 필름의 증착방법 - Google Patents
안정한 플루오르화 teos 필름의 증착방법 Download PDFInfo
- Publication number
- KR970001612A KR970001612A KR1019960024230A KR19960024230A KR970001612A KR 970001612 A KR970001612 A KR 970001612A KR 1019960024230 A KR1019960024230 A KR 1019960024230A KR 19960024230 A KR19960024230 A KR 19960024230A KR 970001612 A KR970001612 A KR 970001612A
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- Prior art keywords
- teos
- component
- oxygen
- depositing
- partial pressure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 안정한 플루오르화 TEOS 필름 증착방법에 관한 것으로서, 플라즈마 강화된 화학적 증기증착 평행 플레이트 반응기가 이중 주파수 RF 파워공급원과 함께 제공되고, 저주파수 RF 파워공급원은, TEOS, 산소, 플루오르로부터 플루오르로 혼입된 이산화규소필름을 증착하는 동안 고주파 파워공급원보다 더 큰 전력을 제공하며, 증착된 필름을 안정하고, 커버력과 평탄화 특성이 우수한 것을 특징으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (5)
- 플라즈마 강화된 화학적 증기증착 반응기내에 기질을 유지시키고; TEOS의 부분압에 대한 산소의 부분압의비율이 상당히 높도록 하면서 반응기내에 TEOS성분, 산소성분, 및 플루오르성분으로 구성된 가스혼합물을 도입하고; 가스혼합물을 기질에 가까운 플라즈마로 여기시키기 위하여 가스혼합물에 교류에너지를 공급하는 것으로 구성되는 것을 특징으로 하는, 플라즈마 강화된 화학적 증기증착 플루오르로 혼입된 이산화규소필름의 증착방법.
- 제1항에 있어서, TEOS성분은 기화된 TEOS이고, 산소성분은 O2이며, 플루오르성분은 C2F6인 것을 특징으로 하는 방법.
- 제1항에 있어서, 이중 RF 주파수 에너지가 사용되고, 저주파수 에너지의 양은 고주파수 에너지의 양보다더 큰 것을 특징으로 하는 방법.
- 제1항에 있어서, TEOS의 부분압에 대한 산소의 부분압 비율이 대략 20 : 1보다 큰 것을 특징으로 하는 방법.
- 제1항에 따른 방법의 단계를 사용하여, 안정하고 낮은 유전상수 필름을 증착하고, 안정하고 낮은 유전상수 필름과 결합된 캡슐층의 증착은 제외하는 것을 특징으로 하는 처리통합방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49461695A | 1995-06-23 | 1995-06-23 | |
US8/494,616 | 1995-06-23 | ||
US08/494,616 | 1995-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970001612A true KR970001612A (ko) | 1997-01-24 |
KR0182830B1 KR0182830B1 (ko) | 1999-04-15 |
Family
ID=23965224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960024230A KR0182830B1 (ko) | 1995-06-23 | 1996-06-24 | 안정한 플루오르화 티이오에스필름의 증착방법 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0759481A1 (ko) |
JP (1) | JPH09106986A (ko) |
KR (1) | KR0182830B1 (ko) |
SG (1) | SG54345A1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6042901A (en) * | 1996-02-20 | 2000-03-28 | Lam Research Corporation | Method for depositing fluorine doped silicon dioxide films |
TW335511B (en) * | 1996-08-02 | 1998-07-01 | Applied Materials Inc | Stress control by fluorination of silica film |
US6136725A (en) * | 1998-04-14 | 2000-10-24 | Cvd Systems, Inc. | Method for chemical vapor deposition of a material on a substrate |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
JP3818561B2 (ja) | 1998-10-29 | 2006-09-06 | エルジー フィリップス エルシーディー カンパニー リミテッド | シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法 |
WO2000055901A1 (en) * | 1999-03-17 | 2000-09-21 | Semiconductor 300 Gmbh & Co. Kg | Method for filling gaps on a semiconductor wafer |
KR100541541B1 (ko) * | 1999-08-26 | 2006-01-12 | 삼성전자주식회사 | 플라즈마 증착장비의 프로세스 챔버 |
US6410457B1 (en) | 1999-09-01 | 2002-06-25 | Applied Materials, Inc. | Method for improving barrier layer adhesion to HDP-FSG thin films |
JP3419745B2 (ja) | 2000-02-28 | 2003-06-23 | キヤノン販売株式会社 | 半導体装置及びその製造方法 |
EP1128421A3 (en) * | 2000-02-28 | 2002-03-06 | Canon Sales Co., Inc. | Method of fabricating an interlayer insulating film comprising Si, O, C and H for semiconductor devices |
US6511922B2 (en) | 2001-03-26 | 2003-01-28 | Applied Materials, Inc. | Methods and apparatus for producing stable low k FSG film for HDP-CVD |
CN106148917B (zh) * | 2015-04-03 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 利用pecvd工艺淀积薄膜的方法和pecvd装置 |
CN109487234A (zh) * | 2018-12-18 | 2019-03-19 | 湖北大学 | 超疏油涂层及其制备方法和应用 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4894352A (en) * | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
GB2256967B (en) * | 1991-06-17 | 1995-03-29 | Motorola Inc | Method of depositing a pecvd teos oxide film |
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1996
- 1996-06-13 EP EP96201647A patent/EP0759481A1/en not_active Withdrawn
- 1996-06-20 JP JP8179878A patent/JPH09106986A/ja active Pending
- 1996-06-21 SG SG1996010125A patent/SG54345A1/en unknown
- 1996-06-24 KR KR1019960024230A patent/KR0182830B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH09106986A (ja) | 1997-04-22 |
EP0759481A1 (en) | 1997-02-26 |
SG54345A1 (en) | 1998-11-16 |
KR0182830B1 (ko) | 1999-04-15 |
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