KR20020079497A - 반도체 기판상에 저 유전율을 갖는 막을 형성하는 방법 - Google Patents
반도체 기판상에 저 유전율을 갖는 막을 형성하는 방법 Download PDFInfo
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- KR20020079497A KR20020079497A KR1020020018752A KR20020018752A KR20020079497A KR 20020079497 A KR20020079497 A KR 20020079497A KR 1020020018752 A KR1020020018752 A KR 1020020018752A KR 20020018752 A KR20020018752 A KR 20020018752A KR 20020079497 A KR20020079497 A KR 20020079497A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 229920006254 polymer film Polymers 0.000 title claims abstract description 8
- -1 Siloxan Chemical class 0.000 title abstract 5
- 239000007789 gas Substances 0.000 claims abstract description 117
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 36
- 239000012495 reaction gas Substances 0.000 claims abstract description 33
- 229920000642 polymer Polymers 0.000 claims abstract description 22
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 21
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 18
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 21
- 239000000654 additive Substances 0.000 claims description 19
- 230000000996 additive effect Effects 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 15
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- 229920005597 polymer membrane Polymers 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 239000007800 oxidant agent Substances 0.000 abstract description 11
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 6
- 230000008016 vaporization Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 24
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 239000012528 membrane Substances 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910018557 Si O Inorganic materials 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 101100275461 Artemia franciscana COIII gene Proteins 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 244000145841 kine Species 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 208000027765 speech disease Diseases 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
막 타입(FILM TYPE) | 막 상 구조(STRUCTURE IN THE FILM) | 에칭 가스(ETCHING GAS) | 분리 가스(DISSOCIATION GAS) | 반응(REACTION) |
리지스트CHx | C | CF4 | CF4 | Ⅰ |
O2 | CO 혹은 CO2 | Ⅱ | ||
저-kSiOCH | Si-O | CF4 | SiF4, CO2, CO | Ⅲ |
C | CF2 | CF4 | Ⅳ | |
O(막에 함유됨) | CO, CO2 | Ⅴ | ||
O2 | CO, CO2 | Ⅵ | ||
산화SiO 막 | Si-O | CF4 | SiF4, CO2, CO | Ⅶ |
물질가스유량(material gas flow)(sccm) | He(sccm) | O2(sccm) | 반응가스총유랑(reation gas total flow)(sccm) | Rt(msec) | |
제1실시예 | 100 | 30 | 70 | 200 | 172 |
비교실시예 | 100 | 30 | 0 | 130 | 265 |
제1실시예 | 비교실시예 | |
증착속도 (nm/min) | 1500 | 500 |
k | 2.45 | 2.70 |
Si:C:O (%) | 31:16:53 | 33:22:45 |
Claims (14)
- 플라즈마 처리에 의해 반도체 기판 상에 실로산 중합체 막을 형성하기 위한 방법에 있어서,실로산 중합체용 물질가스를 생산하기 위해서 SiαOα-1R2α-β+2(OCnH2n+1)β식을 가지는 (여기서, α는 정수 1-3, β는 정수 2, n은 정수 1-3,이고 R은 Si가 부착된 C1-6탄화수소) 실리콘 함유 탄화수소 화합물을 증발시키는 단계와;반도체 기판이 적치되며 플라즈마 CVD 처리용 반응 챔버내로 상기 물질가스를 도입하는 단계와;불활성가스 및 상기 물질가스보다 적은 양을 사용하는 산화 가스를 포함하는 첨가가스를 도입하는 단계와;상기 반응 챔버에서 플라즈마 중합 반응을 활성화하므로써, 상기 반도체 기판 상에 구조적인 단위로, 반복하는 -SiR2O-을 갖는 실로산 중합체 막을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 첨가가스는 실로산 중합체 막의 C 원자 농도가 20% 이상을 넘지 않는 유효양내에서 산화가스를 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 플라스마 중합반응은 상기 반응챔버 내에서 상기 반응가스의 잔류시간(Rt)이 100 msec≤Rt가 되도록 연장시키기 위해 상기 반응가스의 흐름을 제어하는 동안 활성화되며,Rt[s] = 9.42×107(Pr·Ts/Ps·Tr)rw 2d/F여기에서:Pr : 반응 챔버 압력(Pa)Ps : 표준 대기압(Pa)Tr : 반응 가스의 평균 온도(K)Ts : 표준 온도(K)rw: 실리콘 기판의 반경(m)d : 실리콘 기판과 상부 전극사이의 공간(m)F : 반응 가스의 총 유속량(sccm)인 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 잔류시간은 상기 잔류시간과 상기 유전율과의 상관관계에 따라 결정되는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 첨가가스는 아르곤(Ar) 또는 헬륨 (He)중 적어도 어느 하나를 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 반응가스의 유동은, 3.10보다 낮은 실로산 중합체 막의 유전율에 비례하도록 제어되는 것을 특징으로 하는 방법.
- 제1항에 있어서,Rt는 165msec 정도 인 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 알콕시(alkoxy)는 1 내지 3개의 탄소원자를 갖는 실리콘 함유 탄화수소이 있는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 탄화수소는 1 내지 6개의 탄소원자(n=1-6)를 가지는 실리콘 함유 탄화수소 화합물이 있는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 실리콘 함유 탄화수소 화합물은 1 내지 3개의 실리콘 원자를 가지는 것을 특징으로 하는 방법.
- 제1항에 있어서,상기 실리콘 함유 탄화수소 화합물은 1 내지 2개의 실리콘 원자(α=1 또는 2)를 갖는 것을 특징으로 하는 방법.
- 제1항의 방법에 의해서 반도체 기판상에 형성된 실로산 중합체 절연막에 있어서,SiαOα-1R2α-β+2(OCnH2n+1)β(여기서, α는 정수 1-3, β는 정수 2, n은 정수 1-3,이고 R은 Si가 부착된 C1-6탄화수소)를 갖는 실리콘 함유 탄화수소로부터의 플라즈마 중합 반응에 의해 형성되어 3.1 이하의 유전율을 가지며, 20% 미만의 C 원자농도를 가지고 구조적 단위로 반복하는 -SiR2O-을 포함하는 것을 특징으로 하는 실로산 중합체 절연막.
- 제9항에 있어서,2.7 미만의 유전율을 갖는 것을 특징으로 하는 실로산 중합체 절연막.
- 제9항에 있어서,구조적 단위로 반복하는 상기 R은 C1탄화수소인 것을 특징으로 하는 실로산 중합체 절연막.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/827,616 | 2001-04-06 | ||
US09/827,616 US6514880B2 (en) | 1998-02-05 | 2001-04-06 | Siloxan polymer film on semiconductor substrate and method for forming same |
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KR20020079497A true KR20020079497A (ko) | 2002-10-19 |
KR100926722B1 KR100926722B1 (ko) | 2009-11-16 |
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KR1020020018752A KR100926722B1 (ko) | 2001-04-06 | 2002-04-04 | 반도체 기판상의 실록산 중합체막 및 그 제조방법 |
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JP (1) | JP4117768B2 (ko) |
KR (1) | KR100926722B1 (ko) |
Cited By (1)
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KR100767246B1 (ko) * | 2003-04-01 | 2007-10-17 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 화학 증착 필름의 침착 속도를 강화시키는 방법 |
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JP2004253791A (ja) | 2003-01-29 | 2004-09-09 | Nec Electronics Corp | 絶縁膜およびそれを用いた半導体装置 |
JP4854938B2 (ja) | 2004-07-06 | 2012-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20090045936A (ko) | 2006-08-15 | 2009-05-08 | 제이에스알 가부시끼가이샤 | 막 형성용 재료, 및 규소 함유 절연막 및 그의 형성 방법 |
CN101611043B (zh) | 2007-02-14 | 2013-03-13 | Jsr株式会社 | 含硅膜形成用材料、以及含硅绝缘膜及其形成方法 |
KR101759891B1 (ko) | 2015-06-23 | 2017-07-21 | (주)디엔에프 | 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법 |
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JP3488324B2 (ja) * | 1995-09-08 | 2004-01-19 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法および半導体装置の製造装置 |
JP3355949B2 (ja) * | 1996-08-16 | 2002-12-09 | 日本電気株式会社 | プラズマcvd絶縁膜の形成方法 |
US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
US6593247B1 (en) * | 1998-02-11 | 2003-07-15 | Applied Materials, Inc. | Method of depositing low k films using an oxidizing plasma |
JP3197008B2 (ja) * | 1999-06-08 | 2001-08-13 | 日本エー・エス・エム株式会社 | 半導体基板上のシリコン重合体絶縁膜及びその膜を形成する方法 |
GB2355992B (en) * | 1999-06-26 | 2004-06-02 | Trikon Holdings Ltd | Method and apparatus for forming a film on a substrate |
JP3486155B2 (ja) * | 1999-07-23 | 2004-01-13 | 松下電器産業株式会社 | 層間絶縁膜の形成方法 |
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KR100767246B1 (ko) * | 2003-04-01 | 2007-10-17 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 화학 증착 필름의 침착 속도를 강화시키는 방법 |
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JP2002329718A (ja) | 2002-11-15 |
JP4117768B2 (ja) | 2008-07-16 |
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