JPS5586169A - Manufacture of organic photo-conducting film - Google Patents

Manufacture of organic photo-conducting film

Info

Publication number
JPS5586169A
JPS5586169A JP15853278A JP15853278A JPS5586169A JP S5586169 A JPS5586169 A JP S5586169A JP 15853278 A JP15853278 A JP 15853278A JP 15853278 A JP15853278 A JP 15853278A JP S5586169 A JPS5586169 A JP S5586169A
Authority
JP
Japan
Prior art keywords
container
plasma
region
substrates
tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15853278A
Other languages
Japanese (ja)
Inventor
Yoshimi Akai
Masahiko Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15853278A priority Critical patent/JPS5586169A/en
Publication of JPS5586169A publication Critical patent/JPS5586169A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

PURPOSE: To obtain a very thin film having sensitivity for near infrared wavelength region by using as material organic vapor having unsaturated bonds and by operating plasma polymerization when an organic film is formed on a substrate.
CONSTITUTION: A plurality of substrates 22 are enclosed in plasma polymerization reaction container 7, and a pressure of 2∼3 torr is provided inside container 7 via trap 20 by using oil pump 14. Next, a carrier gas, such as Ar, N2, etc. which is to be made into a plasma, is sent from tank 5b, via flowmeter 6b and needle valve 15b, to plasma generating region 12 connected to container 7. At the same time, an organic compound, such as vinylidene fluoride, ethylene, etc., having unsaturated bonds, is sent from tank 5a to container 7 via flow meter 6a and needle valve 15a. Next, a microwave is produced by magnetron 9 in square waveguide 9 surrounding region 12, and a plasma produced in region 12 is brought into container 7; and the compound film coating is fitted on substrates 22.
COPYRIGHT: (C)1980,JPO&Japio
JP15853278A 1978-12-25 1978-12-25 Manufacture of organic photo-conducting film Pending JPS5586169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15853278A JPS5586169A (en) 1978-12-25 1978-12-25 Manufacture of organic photo-conducting film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15853278A JPS5586169A (en) 1978-12-25 1978-12-25 Manufacture of organic photo-conducting film

Publications (1)

Publication Number Publication Date
JPS5586169A true JPS5586169A (en) 1980-06-28

Family

ID=15673778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15853278A Pending JPS5586169A (en) 1978-12-25 1978-12-25 Manufacture of organic photo-conducting film

Country Status (1)

Country Link
JP (1) JPS5586169A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4797338A (en) * 1986-09-16 1989-01-10 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4801515A (en) * 1986-07-08 1989-01-31 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4851313A (en) * 1986-06-10 1989-07-25 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
US4863820A (en) * 1985-07-01 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member having amorphous silicon-germanium layer and process for producing same
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
US4882256A (en) * 1986-10-14 1989-11-21 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer comprising amorphous carbon
US4886724A (en) * 1987-03-09 1989-12-12 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer and process for manufacturing the same
US4891291A (en) * 1987-03-09 1990-01-02 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon overcoat layer
US4994337A (en) * 1987-06-17 1991-02-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4863820A (en) * 1985-07-01 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member having amorphous silicon-germanium layer and process for producing same
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US4851313A (en) * 1986-06-10 1989-07-25 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
US4801515A (en) * 1986-07-08 1989-01-31 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
US4797338A (en) * 1986-09-16 1989-01-10 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4882256A (en) * 1986-10-14 1989-11-21 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer comprising amorphous carbon
US4886724A (en) * 1987-03-09 1989-12-12 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer and process for manufacturing the same
US4891291A (en) * 1987-03-09 1990-01-02 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon overcoat layer
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US4994337A (en) * 1987-06-17 1991-02-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer

Similar Documents

Publication Publication Date Title
JPS5586169A (en) Manufacture of organic photo-conducting film
CA1146909A (en) Method and apparatus for forming films from vapors using a contained plasma source
TW352457B (en) Chemical vapor phase growth apparatus (3)
US4366208A (en) Process for forming photoconductive organic film
GB2155862A (en) Plasma surface processing
HU181779B (en) Method and apparatus for growing thin film layer combined from atoms of various elements on some carrier surface
EP0255454A3 (en) Apparatus for chemical vapor deposition
JPS5628637A (en) Film making method
JPS5645760A (en) Vapor growth method
JPS56133884A (en) Manufacture of photoelectric transducer
KR970001612A (en) Method for depositing a stable fluorinated TEOS film
JPS5766625A (en) Manufacture of film
JPS56123377A (en) Plasma cleaning and etching method
JPS5756036A (en) Plasma chemical vapor phase reactor
JPS57123969A (en) Formation of zinc oxide film by vapor phase method using plasma
JPS55101853A (en) Method of fabricating comparison electrode with fet
JPS5534689A (en) Sputtering device
KR910016962A (en) Plasma Chemical Vapor Deposition of TiN
JPS53110378A (en) Plasma carrying device
JPS5719034A (en) Vapor growth apparatus
JPS5547381A (en) Plasma etching method
JPS57194521A (en) Manufacture of thin film semiconductor
JPS52151555A (en) Manufacture of luminous screen
JPS56149306A (en) Formation of silicon nitride film
JPS54125972A (en) Film forming device