KR910016962A - TiN의 플라즈마 화학증착방법 - Google Patents

TiN의 플라즈마 화학증착방법 Download PDF

Info

Publication number
KR910016962A
KR910016962A KR1019900003896A KR900003896A KR910016962A KR 910016962 A KR910016962 A KR 910016962A KR 1019900003896 A KR1019900003896 A KR 1019900003896A KR 900003896 A KR900003896 A KR 900003896A KR 910016962 A KR910016962 A KR 910016962A
Authority
KR
South Korea
Prior art keywords
tin
chemical vapor
vapor deposition
ticl
plasma chemical
Prior art date
Application number
KR1019900003896A
Other languages
English (en)
Other versions
KR920002708B1 (ko
Inventor
천성순
김시범
장동훈
Original Assignee
이상수
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이상수, 한국과학기술원 filed Critical 이상수
Priority to KR1019900003896A priority Critical patent/KR920002708B1/ko
Publication of KR910016962A publication Critical patent/KR910016962A/ko
Application granted granted Critical
Publication of KR920002708B1 publication Critical patent/KR920002708B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

TiN의 플라즈마 화학증착방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 방법에 사용되는 플라즈마 화학증착장치의 일예를 보인 개략도, 제2도는 제1도의 반응로에 대한 확대도, 제3도는 본 발명에 의해 제조된 제품의 TiN코팅층(A)과 일반적인 화학증착법에 의해 제조된 제품의 TiN코팅층(B)을 비교하여 보인 주사전자 현미경사진.

Claims (2)

  1. TiCl4, N2및 H2를 반응기체로 사용하고 Ar기체를 운반기체로 하여 TiCl4용액으로부터 버블링시켜 얻어진 TiCl4기체를 반응로 내부로 공급하고, RF파워에 의한 글로우방전을 통하여 저온의 증착온도에서 피증착물 표면에 TiN 보호피막을 형성시킴을 특징으로 하는 TiN의 플라즈마 화학증착방법.
  2. 제1항에 있어서, 증착온도는 450-530℃이고, TiCl4와 N2의 혼합비는 TiCl4/ N2=1/20-1/25이며, 증착압력이 2-3Torr인 것을 특징으로 하는 TiN의 플라즈마 화학증착방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003896A 1990-03-22 1990-03-22 TiN의 플라즈마 화학증착방법 KR920002708B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900003896A KR920002708B1 (ko) 1990-03-22 1990-03-22 TiN의 플라즈마 화학증착방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003896A KR920002708B1 (ko) 1990-03-22 1990-03-22 TiN의 플라즈마 화학증착방법

Publications (2)

Publication Number Publication Date
KR910016962A true KR910016962A (ko) 1991-11-05
KR920002708B1 KR920002708B1 (ko) 1992-03-31

Family

ID=19297273

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003896A KR920002708B1 (ko) 1990-03-22 1990-03-22 TiN의 플라즈마 화학증착방법

Country Status (1)

Country Link
KR (1) KR920002708B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980060642A (ko) * 1996-12-31 1998-10-07 김영환 타이타늄질화막 형성방법
KR100613122B1 (ko) * 2005-06-03 2006-08-17 엄환섭 전자파 플라즈마 토치를 이용한 질소 도핑 된 이산화티타늄나노분말의 합성
KR100665401B1 (ko) * 2000-06-28 2007-01-04 주식회사 하이닉스반도체 반도체 소자의 티타늄 나이트라이드막 형성 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0164149B1 (ko) * 1995-03-28 1999-02-01 김주용 타이타늄 카보 나이트라이드층의 개질 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980060642A (ko) * 1996-12-31 1998-10-07 김영환 타이타늄질화막 형성방법
KR100665401B1 (ko) * 2000-06-28 2007-01-04 주식회사 하이닉스반도체 반도체 소자의 티타늄 나이트라이드막 형성 방법
KR100613122B1 (ko) * 2005-06-03 2006-08-17 엄환섭 전자파 플라즈마 토치를 이용한 질소 도핑 된 이산화티타늄나노분말의 합성

Also Published As

Publication number Publication date
KR920002708B1 (ko) 1992-03-31

Similar Documents

Publication Publication Date Title
TW352457B (en) Chemical vapor phase growth apparatus (3)
KR910020193A (ko) 화학부식으로 부터 챔버의 내부금속면을 보호하기 위해 내부 금속면 위에 전도성 코팅을 형성하는 플라즈마 에칭장치 및 방법
KR900015806A (ko) 무정형 실리콘 카바이드를 함유하는 피복물을 형성시키는 방법
KR890004447A (ko) 초전도 재료 및 초전도박막의 제조방법
KR910018575A (ko) 초임계 액체용액을 이용한 화학 증착방법.
ES8500874A1 (es) Un procedimiento para depositar sobre un substrato de vidriocalentado una pelicula de control solar transparente, absorbente y reflectante.
ES457596A1 (es) Aparato para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
CA2051554A1 (en) Thin film deposition method
KR970021367A (ko) 플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치
EP0327034A3 (en) Process for the formation of a functional deposited film containing groups ii and vi atoms as the main constituent atoms by microwave plasma chemical vapor deposition process
KR960034488A (ko) 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법
ES455227A1 (es) Procedimiento de recubrimiento de subtratos por deposicion de plasma.
JPS5586169A (en) Manufacture of organic photo-conducting film
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
KR910016962A (ko) TiN의 플라즈마 화학증착방법
KR900014623A (ko) 산화 탄탈륨 필름의 침착 방법 및 이에 사용되는 화학 증착 시스템
EP0349044A3 (en) Process for the production of a protective film on a magnesium-based substrate, application to the protection of magnesium alloys, substrates thus obtained
KR920001627A (ko) 반도체 기판의 제조방법
DE3873607D1 (de) Herstellung von polymer-metallverbindungen durch abscheidung in glimmentladungszonen.
JPS5351187A (en) Gas phase chemical evaporation apparatus
JPS52151555A (en) Manufacture of luminous screen
JPS5655910A (en) Production of optical multilayer film
JPS57123969A (en) Formation of zinc oxide film by vapor phase method using plasma
JPS57161058A (en) Production of hard film
ES466902A1 (es) Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno.

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030228

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee