KR970021367A - 플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치 - Google Patents
플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치 Download PDFInfo
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- KR970021367A KR970021367A KR1019960041021A KR19960041021A KR970021367A KR 970021367 A KR970021367 A KR 970021367A KR 1019960041021 A KR1019960041021 A KR 1019960041021A KR 19960041021 A KR19960041021 A KR 19960041021A KR 970021367 A KR970021367 A KR 970021367A
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- chemical vapor
- amorphous carbon
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- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 8
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 title claims abstract 18
- 238000000151 deposition Methods 0.000 claims abstract 11
- 230000008021 deposition Effects 0.000 claims abstract 6
- 239000002994 raw material Substances 0.000 claims abstract 3
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract 2
- 229930195733 hydrocarbon Natural products 0.000 claims abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 244000005700 microbiome Species 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/26—Deposition of carbon only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
본 발명의 플라즈마 화학 기상 성장법으로 비결정 탄소 박막을 형성하는 방법에 있어서, 탄화수소 가스와 불화탄소 가스 중 적어도 한 개의 원료 가스가 반응실에 제공되어 있다. 2개의 전극 사이에 고전압을 인가함으로써, 플라즈마는 원료 가스가 제공된 반응실에 생성되어진다. 결과적으로, 비결정 탄소 박막이 기판에 퇴적되는 동안 반응실 내벽상의 부착물의 퇴적을 억제하게 된다. 부착물이 내벽에 퇴적되는 것을 방지하기 위해, 반응실 내벽의 적어도 일부분을 예정 온도 이상으로 가열하고 부착물의 부착 계수를 0으로 한다. 예정 온도는 200℃이다. 반응실은 전체 반응실의 온도를 균일시키기 위해 충분한 열 도전성을 가지는 원료로 바람직하게 구성되어 있다. 내벽으로의 퇴적을 억제하기 위해, 직류 바이어스, 고주파 바이어스 및 직류 바이어스에 부과된 고주파 바이어스 중 하나의 바이어스 전압이 전기 도전성 반응실에 인가된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 비결정 탄소 박막을 형성하기 위해 사용된 종래 평행판형 플라즈마 화학 기상 성장 장치의 구조를 개략적으로 도시한 도면,
제2도는 본 발명의 제1실시예에 따른 향상된 평행판형 플라즈마 화학 기상 성장 장치의 구조를 개략적으로 도시한 도면,
제3도는 반응실에서 압력이 변화할 때 반응실 측벽으로의 부착물 성장 속도의 온도 의존성을 나타낸 그래프.
Claims (10)
- 원료 가스를 반응실 안으로 공급하는 단계와; 상기 단계에서 공급된 원료 가스를 사용하는 반응실에 플라즈마를 생성시키는 단계; 및 상기 반응실 내벽에 부착물의 퇴적을 억제시키면서 기판에 비결정 탄소 박막을 퇴적시키는 단계를 포함하는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제1항에 있어서, 상기 퇴적 단계는; 부착물의 부착 계수가 0이 되고 부착물의 퇴적이 억제되는 온도 이상으로 반응실 내벽의 적어도 일부분을 가열시키는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제1항에 있어서, 상기 퇴적 단계는; 부착물의 퇴적이 억제되는 200℃ 이상의 온도로 반응실 내벽의 적어도 일부분을 가열시키는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제1항에 있어서, 상기 퇴적 단계는; 반응실 내벽에 부착물의 퇴적이 억제되는 전기적으로 도전성 반응실에 바이어스 전압을 인가하는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제2항에 있어서, 상기 반응실은 전체 반응실 온도를 균일하게 하기 위해 충분한 열 도전성을 가지는 원료로 이루어진 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제3항에 있어서, 상기 반응실은 전체 반응실 온도를 균일하게 하기 위해 층분한 열 도전성을 가지는 원료로 이루어진 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제4항에 있어서, 상기 인가 단계는; 반응실에 예정 전압을 가지는 직류 바이어스, 고주파 바이어스 및 직류 바이어스에 부과된 고주파 바이어스 중 하나를 인가하는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제7항에 있어서, 상기 예정 전압은 -lOOV 이하인 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제1항 내지 제8항중 어느 한 항에 있어서, 상기 박막은 비결정 탄소 박막이고 상기 원료 가스는 불화탄소 가스와 탄화수소 가스의 적어도 하나를 포함하는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.
- 제9항에 있어서, 상기 비결정 탄소 박막은 수소, 불소, 질소 및 극소로 구성되는 그룹으로 선택된 적어도 하나의 원소를 포함하는 것을 특징으로 하는 플라즈마 화학 기상 성장법으로 박막을 형성하기 위한 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP7264177A JP2737720B2 (ja) | 1995-10-12 | 1995-10-12 | 薄膜形成方法及び装置 |
JP95-264177 | 1995-10-12 |
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KR970021367A true KR970021367A (ko) | 1997-05-28 |
KR100235362B1 KR100235362B1 (ko) | 1999-12-15 |
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KR1019960041021A KR100235362B1 (ko) | 1995-10-12 | 1996-09-20 | 플라즈마 화학 기상 성장법에 의해 비결정 탄소 박막을 형성하기 위한 방법 및 장치(Method and apparatus for forming amorphous carbon thin film by plasma chemical vapor deposition) |
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US (1) | US6071797A (ko) |
EP (1) | EP0768388B1 (ko) |
JP (1) | JP2737720B2 (ko) |
KR (1) | KR100235362B1 (ko) |
CA (1) | CA2185203A1 (ko) |
DE (1) | DE69618734T2 (ko) |
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-
1995
- 1995-10-12 JP JP7264177A patent/JP2737720B2/ja not_active Expired - Lifetime
-
1996
- 1996-09-06 EP EP96114340A patent/EP0768388B1/en not_active Expired - Lifetime
- 1996-09-06 DE DE69618734T patent/DE69618734T2/de not_active Expired - Lifetime
- 1996-09-10 CA CA002185203A patent/CA2185203A1/en not_active Abandoned
- 1996-09-20 KR KR1019960041021A patent/KR100235362B1/ko not_active IP Right Cessation
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US6652969B1 (en) | 1999-06-18 | 2003-11-25 | Nissin Electric Co., Ltd | Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof |
Also Published As
Publication number | Publication date |
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DE69618734D1 (de) | 2002-03-14 |
KR100235362B1 (ko) | 1999-12-15 |
JPH09111455A (ja) | 1997-04-28 |
EP0768388A2 (en) | 1997-04-16 |
DE69618734T2 (de) | 2002-10-31 |
EP0768388B1 (en) | 2002-01-23 |
US6071797A (en) | 2000-06-06 |
CA2185203A1 (en) | 1997-04-13 |
JP2737720B2 (ja) | 1998-04-08 |
EP0768388A3 (en) | 1997-05-07 |
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