KR960041416A - 실리콘 산화물층의 증착 방법 - Google Patents
실리콘 산화물층의 증착 방법 Download PDFInfo
- Publication number
- KR960041416A KR960041416A KR1019960013434A KR19960013434A KR960041416A KR 960041416 A KR960041416 A KR 960041416A KR 1019960013434 A KR1019960013434 A KR 1019960013434A KR 19960013434 A KR19960013434 A KR 19960013434A KR 960041416 A KR960041416 A KR 960041416A
- Authority
- KR
- South Korea
- Prior art keywords
- gas flow
- teos
- ozone
- silicon oxide
- oxide layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
Abstract
본 발명에서는 테트라 에틸 오르토 실리케이트 (TEOS)를 사용한 오존 활성화 기상 증착 방법에 의해 실리콘 산화물층을 증착하는 방법이 제공된다. 상기 방법에서 TEOS 대 오존의 초기의 높은 가스 흐름 비율은 점차적으로 낮은 고정 비율로 변동된다. 그럼으로써 균질의 실리콘 산화물층이 형성된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (8)
- 테트라 에틸 오르토 실리케이트 (TEOS)를 사용한 오존 활성화된 기상 증착 방법에 의해 실리콘 산화물층을 증착하는 방법에 있어서, TEOS 대 오존의 초기의 높은 가스 흐름 비율이 점차적으로 낮은 고정 비율로 변화되도록구성된 실리콘 산화물층의 증착 방법.
- 제1항에 있어서, 초기에는 TEOS가스 흐름이 오존 가스 흐름의 수배이고, 고정 비율일 때는 오존 가스흐름이 TEOS 가스 흐름의 수배인 것을 특징으로 하는 실리콘 산화물층의 증착 방법.
- 제1항 또는 2항에 있어서, 초기의 조건으로부터 TEOS가스 흐름이 감소되고 오존 가스 흐름이 증가되는 것을 특징으로 하는 실리콘 산화물층의 증착 방법.
- 제1항 또는 2항에 있어서, 초기 비율로부터 먼저 오존 함유 가스 흐름이 증가하고 TEOS 가스 흐름이 일정하게 유지되는 것을 특징으로 하는 실리콘 산화물층의 증착 방법.
- 제1항 내지 4항 중 어느 한 항에 있어서, 가스 흐름의 고정 비율은 대략 1분 30초 후에 얻어지는 것을 특징으로 하는 실리콘 산화물층의 증착 방법.
- 제1항 내지 5항 중 어느 한 항에 있어서, TEOS 대 오존의 가스흐름 비율의 변동이 연속적으로 이루어지는 것을 특징으로 하는 실리콘 산화물층의 증착 방법.
- 제1항 내지 5항중 어느 한 항에 있어서, TEOS 대 오존의 가스 흐름 비율의 변동이 단계적으로 이루어지는 것을 특징으로 하는 실리콘 산화물층의 증착 방법
- 제1항 내지 7항 중 어느 한 항에 있어서, 가스 흐름 비율의 변동이 초기에는 천천히 이루어지고, 그 다음에는 비선형으로 증가하는 것을 특징으로 하는 실리콘 산화물층의 증착 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19516669A DE19516669A1 (de) | 1995-05-05 | 1995-05-05 | Verfahren zur Abscheidung einer Siliziumoxidschicht |
DE19516669.8 | 1995-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960041416A true KR960041416A (ko) | 1996-12-19 |
KR100385003B1 KR100385003B1 (ko) | 2003-08-06 |
Family
ID=7761256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960013434A KR100385003B1 (ko) | 1995-05-05 | 1996-04-29 | 실리콘산화물층의증착방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5965203A (ko) |
EP (1) | EP0741196B1 (ko) |
JP (1) | JP3502504B2 (ko) |
KR (1) | KR100385003B1 (ko) |
AT (1) | ATE182926T1 (ko) |
DE (2) | DE19516669A1 (ko) |
TW (1) | TW424116B (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0144228B1 (ko) * | 1995-03-04 | 1998-08-17 | 김주용 | 다층 금속배선의 층간 절연막 형성 방법 |
JP4498503B2 (ja) * | 1999-10-29 | 2010-07-07 | アプライド マテリアルズ インコーポレイテッド | 薄膜形成装置及び薄膜形成方法 |
US6541369B2 (en) * | 1999-12-07 | 2003-04-01 | Applied Materials, Inc. | Method and apparatus for reducing fixed charges in a semiconductor device |
US6429092B1 (en) | 2000-06-19 | 2002-08-06 | Infineon Technologies Ag | Collar formation by selective oxide deposition |
TW479315B (en) * | 2000-10-31 | 2002-03-11 | Applied Materials Inc | Continuous depostiton process |
US7335609B2 (en) * | 2004-08-27 | 2008-02-26 | Applied Materials, Inc. | Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials |
US6905940B2 (en) * | 2002-09-19 | 2005-06-14 | Applied Materials, Inc. | Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill |
US7456116B2 (en) * | 2002-09-19 | 2008-11-25 | Applied Materials, Inc. | Gap-fill depositions in the formation of silicon containing dielectric materials |
US7141483B2 (en) * | 2002-09-19 | 2006-11-28 | Applied Materials, Inc. | Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill |
US7431967B2 (en) * | 2002-09-19 | 2008-10-07 | Applied Materials, Inc. | Limited thermal budget formation of PMD layers |
CN100445423C (zh) * | 2002-09-30 | 2008-12-24 | 凸版印刷株式会社 | 薄膜成膜方法、薄膜成膜装置和薄膜成膜过程的监视方法 |
JP4794800B2 (ja) * | 2002-09-30 | 2011-10-19 | 凸版印刷株式会社 | 薄膜成膜方法および薄膜成膜装置 |
US7241703B2 (en) | 2003-05-30 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Film forming method for semiconductor device |
US7528051B2 (en) * | 2004-05-14 | 2009-05-05 | Applied Materials, Inc. | Method of inducing stresses in the channel region of a transistor |
US7642171B2 (en) | 2004-08-04 | 2010-01-05 | Applied Materials, Inc. | Multi-step anneal of thin films for film densification and improved gap-fill |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR870000750A (ko) * | 1985-06-14 | 1987-02-20 | 이마드 마하윌리 | 이산화실리콘 필름을 화학적으로 증기피복하는 방법 |
DE3683039D1 (de) * | 1986-04-04 | 1992-01-30 | Ibm Deutschland | Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten. |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
-
1995
- 1995-05-05 DE DE19516669A patent/DE19516669A1/de not_active Withdrawn
-
1996
- 1996-04-11 TW TW085104292A patent/TW424116B/zh not_active IP Right Cessation
- 1996-04-29 KR KR1019960013434A patent/KR100385003B1/ko not_active IP Right Cessation
- 1996-05-01 JP JP13257496A patent/JP3502504B2/ja not_active Expired - Lifetime
- 1996-05-03 EP EP96106983A patent/EP0741196B1/de not_active Expired - Lifetime
- 1996-05-03 AT AT96106983T patent/ATE182926T1/de active
- 1996-05-03 DE DE59602585T patent/DE59602585D1/de not_active Expired - Lifetime
- 1996-05-06 US US08/643,599 patent/US5965203A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3502504B2 (ja) | 2004-03-02 |
DE59602585D1 (de) | 1999-09-09 |
EP0741196A1 (de) | 1996-11-06 |
EP0741196B1 (de) | 1999-08-04 |
US5965203A (en) | 1999-10-12 |
DE19516669A1 (de) | 1996-11-07 |
JPH08306685A (ja) | 1996-11-22 |
KR100385003B1 (ko) | 2003-08-06 |
TW424116B (en) | 2001-03-01 |
ATE182926T1 (de) | 1999-08-15 |
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