TW424116B - Process for deposition of silicon oxide film - Google Patents

Process for deposition of silicon oxide film Download PDF

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Publication number
TW424116B
TW424116B TW085104292A TW85104292A TW424116B TW 424116 B TW424116 B TW 424116B TW 085104292 A TW085104292 A TW 085104292A TW 85104292 A TW85104292 A TW 85104292A TW 424116 B TW424116 B TW 424116B
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Taiwan
Prior art keywords
teos
deposition
silicon oxide
oxide film
airflow
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TW085104292A
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English (en)
Inventor
Zvonimir Gabric
Oswald Spindler
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Siemens Ag
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Publication of TW424116B publication Critical patent/TW424116B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide

Description

4 24116 -J4 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（'） 本發明傜關於一種沈積氧化矽層的方法。 氣化矽曆可以用所諝TE0S (胃 沈積（CVD)手段製成。S知氣相沈稍技術藉於氣流中加 入奥氧予以活化。此種用臬氧活化的TE0S方法的問ffi在 於嫌基質物質而産生各種不同的沈積特性。因而在熱的 氣化物上沈稹車低於在矽上所«得者。 K· Fuj ino.Y.Hishi^oto.H.TokuBasu 和 K.Maeda等人 在1991年二月出販的J.Electroche·. Soc.，等136卷第 2猇，第550頁中公明發表之論文：”大氣颳下在基質上 以TE0S和奥氣行CVD所得沈積特性的依嫌”，文中建嫌改 進搴項f以在低濃度奧氣中沈稹出第一層膜之後，用較 高的奧氣濃度沈積上第二»以求得到所霈的厚度。此法 的缺酤是生成兩暦分離的膜層，所以不能確實防止因氣 泡和化畢計鼉的不確實而造成不同形狀的膜隨。因為對 兩醑沈積鼷間的两供必須重予檢討，在裂造技術上須再 予考_。 上述文齡作者在1992年六月出眼的J.Electrochei. Soc.,等136卷第6號，第1690頁中發表之論文："大氣 醱下行TE0S/03 CVD時基質表面的改質”，由文中得知 .是在奧氣活化的氣化矽氣相法沈穰TE0S時利用»氣或氡 氣霣漿的方法。因為孩等表面《露於氮氣電漿之下，使 表面被整平，而能《«TE0S法建到沈稹均勻發生的目的 。在用氰氣時，整平表面的效果相同，各種表面結溝經 由對不均勻靥的哦散而消除。逭種方法也會導致瑕疵的 本紙張尺度適用中國國家標準（CNS ) A4規格（2! 0 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) .裝· 訂
經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（> ) 禊層品質，而且再現性不足，因而作為製造的應用仍然 要再予研究。 本發明所設立的諜題，在於消除前述臬《活化的TEOS 方法所存缺失。 本發明用申請専利範圍第一項之要件解決這一課颳。 本發明之進一步磔件分別於其後諸申讅項。 本發明以速成一種非常均勻的氣化矽層而無化學量 不確定的問題為目的。其换藉在氣相沈積法两I始之時， 使TEOS氣流率對奧氣氣流率的比例很高，而後妥為變更 比例，使兩者之比降低，至逹_定為止。 典型做法用實例説明。開始時TEOS對含奥氣氣《之比 約為10，随後經過大約1分半鐘就可建到穩定，氣流的 比值為0 . 4。 比較有利是從開始的氣流率比例着手，先保持TE0S氣 流率不變而奧氣氣流率提高。在繼續提高奧氣氣流率至 其穩定的目標值時，TE0S氣流率在速其鼸定之目標值時 可以被減少。所以如此變動最好不是線形两像，但是以 線形關傜變更比例也是可行的。 經由從奥氧發生器産生的奥«氣流率的增加，闻時 減少全部氣流中在起始相的氣氣成份。在下表中顬示在 實例中的程序變數。在第一撕中列出氧的組成，第二和 第三鍵分別列出奧氣和TE0S氣流率。為得盡量穩定的 〇2/〇3氣流，因而餺要在兩種氣體的比例中把奧氣的 組成從低諏高。 本紙張尺度適用中國國家標準（CNS ) A4規格< 2丨0 X 297公釐） ^_ 裝 訂 ^.,^ (請先閱讀背面之注意事項再填寫本頁) 424 I 1 6 id A7 B7 五、發明説明（》） 從起始的氣流率狀況以變更比例達到嫌定的氣流率比， 在實作習僕上較有利的方法是達鑛定時蘧減。為求改善 沈穑程序使逢不敏感所霈的條件，鬩始時TEOS對奥氣的 氣流率比例先要級«變更，随後變快以至達到穩定目欏 。從開始到_致穩定目標的整镅起始程序約經一分半鑪 ,大約是TEOS仍保持開姶時之流置不變而含奥®者則比 開始時增至2倍半時所霱時間的一半。總計在此一時 間TEOS對奧氣氣流的比率為4»經由如此遽當而不突兀 地變動TEOS和奧氣的流量使起始程序中TEOS氣流率在該 程序終黏時約為開始時的2/3,而奥氣流率則為開始時 的15倍。 下表列示程序變黻的可行實例，未列入者為壓力典粗 度，》於公知的標準程序者例如60 0 Torr和40 0t：。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 時閼 〇2 〇3 TEOS [seem]* beem] {seem】 15秒 5000 300 3000 11秒 5000 500 3000 18秒 5000 750 3000 15秒 5000 1000 2800 12秒 4000 2000 2600 9秒 3000 3000 2400 6秒 2000 4000 2200 3秒 1000 5000 2000 X秒 … 5000 2000 * SCC_ =標華C·3氣流率 -5 - 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨0X297公釐） 六、申請專利範園 A8 B8 C8 %Yky! ; ·« I · i ϋ ::.C ? Λ；1 第85 104292號「沉積氧化矽層之方法」專利案 (89年11月修正） 六、申請專利範圍·‘ 1. 一種沈積氧化矽層之方法，係利用臭氧活化的氣相沈 積法使原矽酸四乙酯（Tetraethylorthosilikat ( TEOS ) 沈積一種氧化矽層的方法，其中TE0S對臭氧的氣流比 例自開始時高而降低至一低而穩定之比例，其中TE0S 氣流在開始時數倍於臭氧氣流，而在穗定比例時臭氧 數倍於TE0S氣流。 2. 如申請專利範面第1項之方法，其中TE0S氣流的初始 用量被減少而臭氧氣流則增加。 3. 如申請專利範圍第1或第2項之方法，其特徴在於含臭 氧氣流在開始時的比例被增加而TE0S氣流則保持不變 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財1局員工消費合作社印f 4. 如申請專利範圍第1或第2項之方法，其中在約1½分 鐘之後達到氣流的穩定比例。 5. 如申諝專利範圍第1或第2項之方法，其中TE0S對臭 氧之氣流比例是連續完成其變動。 6. 如申請專利範圍第1或第2項之方法，其中TE0S對臭 氧之氣流比例的變動是分段完成* 7. 如申請專利範圍第1或第2項之方法，其中氣流的變更 在開始時慢而後以非線形增加而完成。 本紙伕尺皮適用中國國家標準（CNS〉A4規格（2丨0X297公釐）
TW085104292A 1995-05-05 1996-04-11 Process for deposition of silicon oxide film TW424116B (en)

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DE19516669A DE19516669A1 (de) 1995-05-05 1995-05-05 Verfahren zur Abscheidung einer Siliziumoxidschicht

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US (1) US5965203A (zh)
EP (1) EP0741196B1 (zh)
JP (1) JP3502504B2 (zh)
KR (1) KR100385003B1 (zh)
AT (1) ATE182926T1 (zh)
DE (2) DE19516669A1 (zh)
TW (1) TW424116B (zh)

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KR0144228B1 (ko) * 1995-03-04 1998-08-17 김주용 다층 금속배선의 층간 절연막 형성 방법
JP4498503B2 (ja) * 1999-10-29 2010-07-07 アプライド マテリアルズ インコーポレイテッド 薄膜形成装置及び薄膜形成方法
US6541369B2 (en) * 1999-12-07 2003-04-01 Applied Materials, Inc. Method and apparatus for reducing fixed charges in a semiconductor device
US6429092B1 (en) 2000-06-19 2002-08-06 Infineon Technologies Ag Collar formation by selective oxide deposition
TW479315B (en) * 2000-10-31 2002-03-11 Applied Materials Inc Continuous depostiton process
US7335609B2 (en) * 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US6905940B2 (en) * 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US7456116B2 (en) * 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US7141483B2 (en) * 2002-09-19 2006-11-28 Applied Materials, Inc. Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill
US7431967B2 (en) * 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
CN100445423C (zh) * 2002-09-30 2008-12-24 凸版印刷株式会社 薄膜成膜方法、薄膜成膜装置和薄膜成膜过程的监视方法
JP4794800B2 (ja) * 2002-09-30 2011-10-19 凸版印刷株式会社 薄膜成膜方法および薄膜成膜装置
US7241703B2 (en) 2003-05-30 2007-07-10 Matsushita Electric Industrial Co., Ltd. Film forming method for semiconductor device
US7528051B2 (en) * 2004-05-14 2009-05-05 Applied Materials, Inc. Method of inducing stresses in the channel region of a transistor
US7642171B2 (en) 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films

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KR870000750A (ko) * 1985-06-14 1987-02-20 이마드 마하윌리 이산화실리콘 필름을 화학적으로 증기피복하는 방법
DE3683039D1 (de) * 1986-04-04 1992-01-30 Ibm Deutschland Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten.
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

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JP3502504B2 (ja) 2004-03-02
DE59602585D1 (de) 1999-09-09
EP0741196A1 (de) 1996-11-06
EP0741196B1 (de) 1999-08-04
US5965203A (en) 1999-10-12
DE19516669A1 (de) 1996-11-07
JPH08306685A (ja) 1996-11-22
KR100385003B1 (ko) 2003-08-06
ATE182926T1 (de) 1999-08-15
KR960041416A (ko) 1996-12-19

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