KR900008070B1 - 용착 및 플라나화 방법 및 장치 - Google Patents

용착 및 플라나화 방법 및 장치 Download PDF

Info

Publication number
KR900008070B1
KR900008070B1 KR1019870012800A KR870012800A KR900008070B1 KR 900008070 B1 KR900008070 B1 KR 900008070B1 KR 1019870012800 A KR1019870012800 A KR 1019870012800A KR 870012800 A KR870012800 A KR 870012800A KR 900008070 B1 KR900008070 B1 KR 900008070B1
Authority
KR
South Korea
Prior art keywords
substrate
layer
welding
temperature
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870012800A
Other languages
English (en)
Korean (ko)
Other versions
KR880008423A (ko
Inventor
쥬니어 로렌스 티. 라몬트
크레이그 모셀리 로드릭
마이클 메캔티 티모시
Original Assignee
머신 테크놀로지 인코오포레이티드
게리 힐만
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 머신 테크놀로지 인코오포레이티드, 게리 힐만 filed Critical 머신 테크놀로지 인코오포레이티드
Publication of KR880008423A publication Critical patent/KR880008423A/ko
Application granted granted Critical
Publication of KR900008070B1 publication Critical patent/KR900008070B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3327—Coating high aspect ratio workpieces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019870012800A 1986-12-04 1987-11-13 용착 및 플라나화 방법 및 장치 Expired KR900008070B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US938043 1986-12-04
US06/938,043 US4756810A (en) 1986-12-04 1986-12-04 Deposition and planarizing methods and apparatus

Publications (2)

Publication Number Publication Date
KR880008423A KR880008423A (ko) 1988-08-31
KR900008070B1 true KR900008070B1 (ko) 1990-10-31

Family

ID=25470774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012800A Expired KR900008070B1 (ko) 1986-12-04 1987-11-13 용착 및 플라나화 방법 및 장치

Country Status (4)

Country Link
US (1) US4756810A (cg-RX-API-DMAC7.html)
EP (1) EP0273550A1 (cg-RX-API-DMAC7.html)
JP (1) JPS63152146A (cg-RX-API-DMAC7.html)
KR (1) KR900008070B1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170076817A (ko) * 2008-10-22 2017-07-04 어플라이드 머티어리얼스, 인코포레이티드 강화된 구리 이온화를 이용한 ｐｖｄ 구리 시드 오버행 재-스퍼터링

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5591267A (en) * 1988-01-11 1997-01-07 Ohmi; Tadahiro Reduced pressure device
US5906688A (en) * 1989-01-11 1999-05-25 Ohmi; Tadahiro Method of forming a passivation film
US4963239A (en) * 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US5283087A (en) * 1988-02-05 1994-02-01 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and apparatus
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate
US4950377A (en) * 1988-09-23 1990-08-21 Siemens Aktiengesellschaft Apparatus and method for reactive ion etching
US5683072A (en) * 1988-11-01 1997-11-04 Tadahiro Ohmi Thin film forming equipment
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
JPH02219225A (ja) * 1989-02-20 1990-08-31 Matsushita Electric Ind Co Ltd 膜堆積装置および膜堆積方法
US5419822A (en) * 1989-02-28 1995-05-30 Raytheon Company Method for applying a thin adherent layer
US5017439A (en) * 1989-07-19 1991-05-21 Seagate Technology, Inc. Micro-contamination-free coating for die-cast component in magnetic disk drive
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
EP0430403B1 (en) 1989-11-30 1998-01-07 STMicroelectronics, Inc. Method for fabricating interlevel contacts
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
JP2758948B2 (ja) * 1989-12-15 1998-05-28 キヤノン株式会社 薄膜形成方法
US5114556A (en) * 1989-12-27 1992-05-19 Machine Technology, Inc. Deposition apparatus and method for enhancing step coverage and planarization on semiconductor wafers
DE69129081T2 (de) * 1990-01-29 1998-07-02 Varian Associates Gerät und Verfahren zur Niederschlagung durch einen Kollimator
GB9006073D0 (en) * 1990-03-17 1990-05-16 D G Teer Coating Services Limi Magnetron sputter ion plating
US5108570A (en) * 1990-03-30 1992-04-28 Applied Materials, Inc. Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer
US6287963B1 (en) * 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
KR950009939B1 (ko) * 1990-11-30 1995-09-01 가부시끼가이샤 히다찌세이사꾸쇼 박막 형성 방법 및 그에 의해 형성된 반도체 장치
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
BR9205911A (pt) * 1991-04-19 1994-12-27 Surface Solutions Inc Aparelho de sublimação catódica, e processo para depositar película delgada sobre superfície de objeto dentro de um aparelho de sublimação catódica
JP2725944B2 (ja) * 1991-04-19 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属層堆積方法
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6238588B1 (en) 1991-06-27 2001-05-29 Applied Materials, Inc. High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
US5772832A (en) * 1991-06-27 1998-06-30 Applied Materials, Inc Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US5171412A (en) * 1991-08-23 1992-12-15 Applied Materials, Inc. Material deposition method for integrated circuit manufacturing
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5300813A (en) 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US6033534A (en) * 1992-05-20 2000-03-07 Siemens Aktiengesellschaft Method for producing an Al-containing layer with a planar surface on a substrate having hole structures with a high aspect ratio in the surface
EP0594300B1 (en) * 1992-09-22 1998-07-29 STMicroelectronics, Inc. Method for forming a metal contact
JP3169151B2 (ja) * 1992-10-26 2001-05-21 三菱電機株式会社 薄膜形成装置
JP3231900B2 (ja) * 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
KR100281345B1 (ko) 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
JPH06306599A (ja) * 1993-04-23 1994-11-01 Toshiba Corp 半導体素子用製造装置
US5380414A (en) * 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
JP3382031B2 (ja) * 1993-11-16 2003-03-04 株式会社東芝 半導体装置の製造方法
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
JPH09501612A (ja) * 1994-04-08 1997-02-18 マーク エー． レイ， 選択的プラズマ成長
US5639357A (en) * 1994-05-12 1997-06-17 Applied Materials Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
EP0704878A1 (en) * 1994-09-27 1996-04-03 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
KR960015719A (ko) 1994-10-12 1996-05-22 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US20010028922A1 (en) * 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US5830336A (en) * 1995-12-05 1998-11-03 Minnesota Mining And Manufacturing Company Sputtering of lithium
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
USD400511S (en) 1996-03-21 1998-11-03 Applied Materials, Inc. Magnet structure for a conical target
US6376781B1 (en) 1996-05-03 2002-04-23 Micron Technology, Inc. Low resistance contacts fabricated in high aspect ratio openings by resputtering
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US5741404A (en) * 1996-05-24 1998-04-21 Micron Technology, Inc. Multi-planar angulated sputtering target and method of use for filling openings
DE19640240A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit einer Schicht aus einem Edelmetall und Verfahren zum Herstellen derselben
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US6605197B1 (en) * 1997-05-13 2003-08-12 Applied Materials, Inc. Method of sputtering copper to fill trenches and vias
US6051114A (en) * 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US5994213A (en) * 1998-02-09 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Aluminum plug process
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6187673B1 (en) * 1998-09-03 2001-02-13 Micron Technology, Inc. Small grain size, conformal aluminum interconnects and method for their formation
US6589437B1 (en) 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6720261B1 (en) * 1999-06-02 2004-04-13 Agere Systems Inc. Method and system for eliminating extrusions in semiconductor vias
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6899795B1 (en) * 2000-01-18 2005-05-31 Unaxis Balzers Aktiengesellschaft Sputter chamber as well as vacuum transport chamber and vacuum handling apparatus with such chambers
HK1051056A1 (zh) * 2000-01-18 2003-07-18 Unaxis Balzers Aktiengesellschaft 溅射室、真空传输室和带有这类室的真空处理装置
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6455326B1 (en) * 2000-05-15 2002-09-24 Ramtron International Corporation Enhanced process capability for sputtered ferroelectric films using low frequency pulsed DC and RF power supplies
US6727593B2 (en) * 2001-03-01 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor device with improved bonding
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP4583868B2 (ja) * 2004-10-15 2010-11-17 株式会社昭和真空 スパッタ装置
JP4336320B2 (ja) * 2005-02-25 2009-09-30 キヤノンアネルバ株式会社 ウエハホルダ
US7378002B2 (en) * 2005-08-23 2008-05-27 Applied Materials, Inc. Aluminum sputtering while biasing wafer
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US9782949B2 (en) 2008-05-30 2017-10-10 Corning Incorporated Glass laminated articles and layered articles
TW201110831A (en) * 2009-09-03 2011-03-16 Chunghwa Picture Tubes Ltd Plasma apparatus and method of fabricating nano-crystalline silicon thin film
US9593410B2 (en) * 2013-03-05 2017-03-14 Applied Materials, Inc. Methods and apparatus for stable substrate processing with multiple RF power supplies
JP6131145B2 (ja) * 2013-08-06 2017-05-17 株式会社神戸製鋼所 成膜装置
GB201420935D0 (en) * 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
USD891382S1 (en) * 2019-02-08 2020-07-28 Applied Materials, Inc. Process shield for a substrate processing chamber
US11289312B2 (en) * 2019-06-12 2022-03-29 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability
CN112635305A (zh) * 2020-11-24 2021-04-09 武汉新芯集成电路制造有限公司 半导体器件及其制造方法
CN112349742A (zh) * 2020-11-24 2021-02-09 武汉新芯集成电路制造有限公司 背照式图像传感器及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451912A (en) * 1966-07-15 1969-06-24 Ibm Schottky-barrier diode formed by sputter-deposition processes
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
FR2119930B1 (cg-RX-API-DMAC7.html) * 1970-12-31 1974-08-19 Ibm
US3775285A (en) * 1971-05-18 1973-11-27 Warner Lambert Co Apparatus for coating continuous strips of ribbon razor blade material
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4007103A (en) * 1975-10-14 1977-02-08 Ibm Corporation Planarizing insulative layers by resputtering
US4336118A (en) * 1980-03-21 1982-06-22 Battelle Memorial Institute Methods for making deposited films with improved microstructures
US4410407A (en) * 1981-12-22 1983-10-18 Raytheon Company Sputtering apparatus and methods
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4664935A (en) * 1985-09-24 1987-05-12 Machine Technology, Inc. Thin film deposition apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170076817A (ko) * 2008-10-22 2017-07-04 어플라이드 머티어리얼스, 인코포레이티드 강화된 구리 이온화를 이용한 ｐｖｄ 구리 시드 오버행 재-스퍼터링

Also Published As

Publication number Publication date
JPH0365013B2 (cg-RX-API-DMAC7.html) 1991-10-09
KR880008423A (ko) 1988-08-31
JPS63152146A (ja) 1988-06-24
EP0273550A1 (en) 1988-07-06
US4756810A (en) 1988-07-12

Similar Documents

Publication Publication Date Title
US4756810A (en) Deposition and planarizing methods and apparatus
KR940000908B1 (ko) 반도체 웨이퍼의 단계피복 및 평면화향상을 위한 용착장치 및 방법
KR101760846B1 (ko) 고 종횡비 피처들에서 금속을 증착하는 방법
CN102758171B (zh) 具有可施加至靶材的射频电源的物理气相沉积等离子体反应器
US6627050B2 (en) Method and apparatus for depositing a tantalum-containing layer on a substrate
US7378002B2 (en) Aluminum sputtering while biasing wafer
JP3737363B2 (ja) 不均一性補償を伴う表面の物理的気相処理
JPH06220627A (ja) 成膜装置
KR20010032498A (ko) 손상없는 스컵쳐 코팅 증착
JPH08264487A (ja) リエントリー形状コンタクト・ホールをコーティングまたは埋めるための堆積プロセス
JP2004526868A5 (cg-RX-API-DMAC7.html)
US20140102369A1 (en) Plasma sprayed deposition ring isolator
KR20170118922A (ko) 타겟 수명에 걸쳐 하나 또는 그 초과의 막 특성들을 제어하기 위한 오토 캐패시턴스 튜너 전류 보상
KR20140001203A (ko) 고 종횡비 피쳐들 내에 금속을 증착하기 위한 방법들
JPH10229058A (ja) コーティング付き堆積チャンバ装置
JPH10251849A (ja) スパッタリング装置
JPH0610125A (ja) 薄膜形成方法
Siemroth et al. Metallization of sub-micron trenches and vias with high aspect ratio
JP2001140073A (ja) セルフスパッタリング用裏面冷却ガス
JPH1060637A (ja) 基板上に材料を堆積する方法及び装置
US5013274A (en) Process for restoring locally damaged parts, particularly anticathodes
JPH07292474A (ja) 薄膜製造方法
JPH07113172A (ja) 薄膜加工用コリメーター、薄膜加工装置、薄膜加工方法並びに半導体装置の配線形成方法
JP3958259B2 (ja) 銅薄膜形成方法
JP3957810B2 (ja) 銅薄膜形成方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 19931101

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 19931101

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000