KR900001034A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR900001034A
KR900001034A KR1019890006455A KR890006455A KR900001034A KR 900001034 A KR900001034 A KR 900001034A KR 1019890006455 A KR1019890006455 A KR 1019890006455A KR 890006455 A KR890006455 A KR 890006455A KR 900001034 A KR900001034 A KR 900001034A
Authority
KR
South Korea
Prior art keywords
semiconductor device
electrical
wiring member
insulating film
semiconductor material
Prior art date
Application number
KR1019890006455A
Other languages
English (en)
Inventor
야스노리 나까자끼
Original Assignee
야마무라 가쯔미
세이꼬 엡슨 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15879988A external-priority patent/JPH027528A/ja
Priority claimed from JP15879888A external-priority patent/JPH027527A/ja
Application filed by 야마무라 가쯔미, 세이꼬 엡슨 가부시끼 가이샤 filed Critical 야마무라 가쯔미
Publication of KR900001034A publication Critical patent/KR900001034A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구조를 도시하는 단면도,
제2도는 종래의 구조를 도시하는 단면도,
제3A도. 제3B도 및 제3C도는 본 발명을 실시하기 위한 제조공정 단면도.

Claims (1)

  1. 하이포라 트랜지스터를 기판의 일부 또는 전영역에 형성함으로서 구성된 반도체 장치에 있어서, 전기 하이포라 트랜지스터에 베이스 영역의 일부로 전기 베이스 영역의 확산층의 상부에 직접 전기적으로 접속된 반도체 재료를 성분으로 하는 제1의 배선재 또는 금속 실리사이드를 성분으로 하는 제1의 배선재와, 전기 바이포라 트랜시스터의 에미터 영역과 직접 전기적으로 접속된 반도체 재료를 성분으로 하는 제2배선재와 전기 제1배선재를 분리하는 전기 제1배선재의 상부에 있는 제1절연막 및 전기 제2배선재 형성전에 전기 기판전면에 피착한 제2절연막을 전면 부식함으로서 형성한 측벽 절연막을 가지는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890006455A 1988-06-27 1989-05-15 반도체장치 KR900001034A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP158799 1988-06-27
JP15879988A JPH027528A (ja) 1988-06-27 1988-06-27 半導体装置
JP15879888A JPH027527A (ja) 1988-06-27 1988-06-27 トランジスター
JP158798 1988-06-27

Publications (1)

Publication Number Publication Date
KR900001034A true KR900001034A (ko) 1990-01-31

Family

ID=26485805

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006455A KR900001034A (ko) 1988-06-27 1989-05-15 반도체장치

Country Status (3)

Country Link
KR (1) KR900001034A (ko)
GB (1) GB2220102B (ko)
HK (1) HK41194A (ko)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8103032A (nl) * 1980-08-04 1982-03-01 Fairchild Camera Instr Co Werkwijze voor het vervaardigen van een snelwerkende bipolaire transistor en transistor vervaardigd volgens deze werkwijze.
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
US4495512A (en) * 1982-06-07 1985-01-22 International Business Machines Corporation Self-aligned bipolar transistor with inverted polycide base contact
US4545114A (en) * 1982-09-30 1985-10-08 Fujitsu Limited Method of producing semiconductor device
JPS5975661A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置及びその製造方法
EP0170250B1 (en) * 1984-07-31 1990-10-24 Kabushiki Kaisha Toshiba Bipolar transistor and method for producing the bipolar transistor
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
EP0231740A3 (en) * 1986-01-30 1989-07-12 Texas Instruments Incorporated A polysilicon self-aligned bipolar device and process of manufacturing same
JPH0628266B2 (ja) * 1986-07-09 1994-04-13 株式会社日立製作所 半導体装置の製造方法
JPS6473766A (en) * 1987-09-16 1989-03-20 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit

Also Published As

Publication number Publication date
GB2220102A (en) 1989-12-28
GB2220102B (en) 1992-01-29
GB8913801D0 (en) 1989-08-02
HK41194A (en) 1994-05-06

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E902 Notification of reason for refusal
E601 Decision to refuse application