GB2220102B - Method of making a bipolar transistor - Google Patents

Method of making a bipolar transistor

Info

Publication number
GB2220102B
GB2220102B GB8913801A GB8913801A GB2220102B GB 2220102 B GB2220102 B GB 2220102B GB 8913801 A GB8913801 A GB 8913801A GB 8913801 A GB8913801 A GB 8913801A GB 2220102 B GB2220102 B GB 2220102B
Authority
GB
United Kingdom
Prior art keywords
making
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8913801A
Other versions
GB2220102A (en
GB8913801D0 (en
Inventor
Yasunori Nakazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15879888A external-priority patent/JPH027527A/en
Priority claimed from JP15879988A external-priority patent/JPH027528A/en
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of GB8913801D0 publication Critical patent/GB8913801D0/en
Publication of GB2220102A publication Critical patent/GB2220102A/en
Application granted granted Critical
Publication of GB2220102B publication Critical patent/GB2220102B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB8913801A 1988-06-27 1989-06-15 Method of making a bipolar transistor Expired - Fee Related GB2220102B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15879888A JPH027527A (en) 1988-06-27 1988-06-27 Transistor
JP15879988A JPH027528A (en) 1988-06-27 1988-06-27 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8913801D0 GB8913801D0 (en) 1989-08-02
GB2220102A GB2220102A (en) 1989-12-28
GB2220102B true GB2220102B (en) 1992-01-29

Family

ID=26485805

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8913801A Expired - Fee Related GB2220102B (en) 1988-06-27 1989-06-15 Method of making a bipolar transistor

Country Status (3)

Country Link
KR (1) KR900001034A (en)
GB (1) GB2220102B (en)
HK (1) HK41194A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2081507A (en) * 1980-08-04 1982-02-17 Fairchild Camera Instr Co High speed bipolar transistor and method of making same
EP0071010A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for planarizing an integrated circuit structure
EP0096155A2 (en) * 1982-06-07 1983-12-21 International Business Machines Corporation Transistor having emitter self-aligned with an extrinsic base contact and method of making it
EP0107416A2 (en) * 1982-09-30 1984-05-02 Fujitsu Limited Method of producing semiconductor device
EP0109766A1 (en) * 1982-10-22 1984-05-30 Fujitsu Limited Semiconductor device with a passivated junction
EP0170250A2 (en) * 1984-07-31 1986-02-05 Kabushiki Kaisha Toshiba Bipolar transistor and method for producing the bipolar transistor
EP0189486A1 (en) * 1984-08-10 1986-08-06 Hitachi, Ltd. Method of producing bipolar semiconductor devices
EP0231740A2 (en) * 1986-01-30 1987-08-12 Texas Instruments Incorporated A polysilicon self-aligned bipolar device and process of manufacturing same
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure
GB2209872A (en) * 1987-09-16 1989-05-24 Oki Electric Ind Co Ltd A method for fabricating a bipolar transistor

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2081507A (en) * 1980-08-04 1982-02-17 Fairchild Camera Instr Co High speed bipolar transistor and method of making same
EP0071010A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for planarizing an integrated circuit structure
EP0096155A2 (en) * 1982-06-07 1983-12-21 International Business Machines Corporation Transistor having emitter self-aligned with an extrinsic base contact and method of making it
EP0107416A2 (en) * 1982-09-30 1984-05-02 Fujitsu Limited Method of producing semiconductor device
EP0109766A1 (en) * 1982-10-22 1984-05-30 Fujitsu Limited Semiconductor device with a passivated junction
EP0170250A2 (en) * 1984-07-31 1986-02-05 Kabushiki Kaisha Toshiba Bipolar transistor and method for producing the bipolar transistor
EP0189486A1 (en) * 1984-08-10 1986-08-06 Hitachi, Ltd. Method of producing bipolar semiconductor devices
EP0231740A2 (en) * 1986-01-30 1987-08-12 Texas Instruments Incorporated A polysilicon self-aligned bipolar device and process of manufacturing same
EP0252206A2 (en) * 1986-07-09 1988-01-13 Hitachi, Ltd. Method of fabricating semiconductor structure
GB2209872A (en) * 1987-09-16 1989-05-24 Oki Electric Ind Co Ltd A method for fabricating a bipolar transistor

Also Published As

Publication number Publication date
GB2220102A (en) 1989-12-28
GB8913801D0 (en) 1989-08-02
KR900001034A (en) 1990-01-31
HK41194A (en) 1994-05-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20070615