KR900000053B1 - Reference circuit - Google Patents

Reference circuit

Info

Publication number
KR900000053B1
KR900000053B1 KR8504572A KR850004572A KR900000053B1 KR 900000053 B1 KR900000053 B1 KR 900000053B1 KR 8504572 A KR8504572 A KR 8504572A KR 850004572 A KR850004572 A KR 850004572A KR 900000053 B1 KR900000053 B1 KR 900000053B1
Authority
KR
South Korea
Prior art keywords
reference current
data
voltage
different reference
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8504572A
Other languages
English (en)
Korean (ko)
Other versions
KR860000660A (ko
Inventor
Robert G Pollachek
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of KR860000660A publication Critical patent/KR860000660A/ko
Application granted granted Critical
Publication of KR900000053B1 publication Critical patent/KR900000053B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR8504572A 1984-06-29 1985-06-27 Reference circuit Expired KR900000053B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/625,910 US4648074A (en) 1984-06-29 1984-06-29 Reference circuit with semiconductor memory array
US625910 1984-06-29

Publications (2)

Publication Number Publication Date
KR860000660A KR860000660A (ko) 1986-01-30
KR900000053B1 true KR900000053B1 (en) 1990-01-18

Family

ID=24508136

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8504572A Expired KR900000053B1 (en) 1984-06-29 1985-06-27 Reference circuit

Country Status (3)

Country Link
US (1) US4648074A (enExample)
JP (1) JPS6117297A (enExample)
KR (1) KR900000053B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421862B2 (en) 2001-12-27 2008-09-09 Lg Electronics Inc. Washing machine with temperature sensor arrangement

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62129997A (ja) * 1985-11-13 1987-06-12 Mitsubishi Electric Corp ダイナミツクｒａｍ
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
US5719805A (en) * 1987-04-24 1998-02-17 Kabushiki Kaisha Toshiba Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units
US5313420A (en) * 1987-04-24 1994-05-17 Kabushiki Kaisha Toshiba Programmable semiconductor memory
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US5270969A (en) * 1987-06-29 1993-12-14 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US4939690A (en) * 1987-12-28 1990-07-03 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
EP0508552B1 (en) * 1988-10-24 1997-12-10 Kabushiki Kaisha Toshiba Programmable semiconductor memory
DE3855444T2 (de) * 1988-10-24 1996-12-19 Toshiba Kawasaki Kk Programmierbarer Halbleiterspeicher
JPH0266898U (enExample) * 1988-11-10 1990-05-21
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
US5293345A (en) * 1989-06-12 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor memory device having a data detection circuit with two reference potentials
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
US5126970A (en) * 1990-04-06 1992-06-30 Vlsi Technology, Inc. Static random access memory with PMOS pass gates
JP3350045B2 (ja) * 1990-10-11 2002-11-25 株式会社日立製作所 半導体記憶装置
JPH04195900A (ja) * 1990-11-27 1992-07-15 Nec Ic Microcomput Syst Ltd カレントミラー型センスアンプ
JPH04316478A (ja) * 1991-04-12 1992-11-06 Nec Corp 生物試料観察装置、システムおよび方法
JP2917722B2 (ja) * 1993-01-07 1999-07-12 日本電気株式会社 電気的書込消去可能な不揮発性半導体記憶装置
KR960012252B1 (ko) * 1993-03-05 1996-09-18 삼성전자 주식회사 반도체 메모리장치
FR2751778B1 (fr) * 1996-07-23 1998-11-06 Sgs Thomson Microelectronics Memoire accessible en lecture seulement
JP2978813B2 (ja) * 1997-02-27 1999-11-15 日本電気アイシーマイコンシステム株式会社 半導体記憶回路
JP3169858B2 (ja) * 1997-06-20 2001-05-28 日本電気アイシーマイコンシステム株式会社 多値型半導体記憶装置
US6137720A (en) * 1997-11-26 2000-10-24 Cypress Semiconductor Corporation Semiconductor reference voltage generator having a non-volatile memory structure
JP3620992B2 (ja) * 1999-04-23 2005-02-16 株式会社 沖マイクロデザイン 半導体記憶装置
DE10113239C1 (de) * 2001-03-19 2002-08-22 Infineon Technologies Ag Bewerterschaltung zum Auslesen einer in einer Speicherzelle gespeicherten Information
TW559814B (en) * 2001-05-31 2003-11-01 Semiconductor Energy Lab Nonvolatile memory and method of driving the same
US6639852B2 (en) * 2002-01-07 2003-10-28 Faraday Technology Corp. Sensing apparatus for a ROM memory device
ITTO20030121A1 (it) * 2003-02-18 2004-08-19 St Microelectronics Srl Amplificatore di lettura di celle di memoria non volatili a
JP2007053229A (ja) * 2005-08-18 2007-03-01 Nec Electronics Corp 半導体記憶装置およびその製造方法
JPWO2010082243A1 (ja) * 2009-01-13 2012-06-28 パナソニック株式会社 不揮発性半導体メモリ及びメモリシステム
EP3948868B1 (en) * 2019-10-18 2024-06-05 Yangtze Memory Technologies Co., Ltd. Method of programming and verifying memory device and related memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449203A (en) * 1981-02-25 1984-05-15 Motorola, Inc. Memory with reference voltage generator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421862B2 (en) 2001-12-27 2008-09-09 Lg Electronics Inc. Washing machine with temperature sensor arrangement

Also Published As

Publication number Publication date
KR860000660A (ko) 1986-01-30
JPH0115960B2 (enExample) 1989-03-22
JPS6117297A (ja) 1986-01-25
US4648074A (en) 1987-03-03

Similar Documents

Publication Publication Date Title
KR900000053B1 (en) Reference circuit
EP0128427A3 (en) Semiconductor memory having circuit effecting refresh on variable cycles
GB1446139A (en) Method and device for storing analog signals
KR880001109A (ko) 집적논리회로
JPS6435799A (en) Semiconductor integrated circuit
ES461619A1 (es) Perfeccionamientos en aparatos semiconductores.
EP0184420A3 (en) Electrographic writing head
DE3579182D1 (de) Halbleiteranordnung mit einem treiberschaltungselement und einem ausgangstransistor.
CH627616B (de) Spannungsauswahlschaltkreis.
EP0310359A3 (en) Logic circuit using schottky barrier fets
JPS6437798A (en) Current detecting circuit for rom device
GB1285748A (en) A semiconductor switching element and a semiconductor switching device involving the same
EP0254549A3 (en) Image sensor
JP2797354B2 (ja) アナログスイッチ回路及び楽音信号発生回路
HK73997A (en) Integrated circuit
EP0200500A3 (en) Cmos memory bias systems
JPS53136447A (en) Associative memory
SU913603A1 (ru) Кольцевой счетчик импульсов 1
JPS6430311A (en) Amplifier
JPS5727485A (en) Rotating magnetic field driving device
EP0168230A3 (en) Unitary multiplexer decoder circuit
EP0209133A3 (en) Inverter for use in binary counter
SU1398068A1 (ru) Многовходовый Д-триггер
JPS5750386A (en) Semiconductor storage circuit
JPS6434094A (en) Loop forming circuit by junction type field effect transistors

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20020112

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20030119

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20030119

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000