KR880012791A - 다이어몬드 증착장치와 방법 - Google Patents

다이어몬드 증착장치와 방법 Download PDF

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KR880012791A
KR880012791A KR1019880003737A KR880003737A KR880012791A KR 880012791 A KR880012791 A KR 880012791A KR 1019880003737 A KR1019880003737 A KR 1019880003737A KR 880003737 A KR880003737 A KR 880003737A KR 880012791 A KR880012791 A KR 880012791A
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plasma
gas
electrode
deposition method
diamond
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KR910006784B1 (ko
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가즈아끼 구리하라
겐이찌 사사끼
모도노부 가와라다
나가아끼 고시노
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야마모도 다꾸마
후찌쓰 가부시끼가이샤
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Priority claimed from JP62220437A external-priority patent/JPS6433096A/ja
Priority claimed from JP62245853A external-priority patent/JPH0775689B2/ja
Priority claimed from JP62250598A external-priority patent/JPS6428297A/ja
Priority claimed from JP62257632A external-priority patent/JPH01100092A/ja
Priority claimed from JP62320142A external-priority patent/JPH0729876B2/ja
Priority claimed from JP62330130A external-priority patent/JPH01172294A/ja
Priority claimed from JP63003043A external-priority patent/JPH01179789A/ja
Application filed by 야마모도 다꾸마, 후찌쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/276—Diamond only using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Abstract

내용 없음

Description

다이어몬드 증착장치와 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 의해서 행해지는 열프라즈마 CVD법의 원리 설명도, 제 2 도는 본 발명을 실행하는 열프라즈마 CVD 장치의 개략도, 제 3 도는 열프라즈마 증기상 합성방법의 실시예를 나타낸 도.

Claims (40)

  1. 열프라즈마 화학증착 장치의 양극과 음극의 사이에 방전가스(dicharge gas)를 공급하는 동안에 아크방전을 행하는 단계, 발생된 프라즈마 제트에 가스상의 화합물을 공급함으로써 가스상의 탄소를 래디칼화하는 단계, 및 처리될 가판상에 상기 래디칼화 된 프라즈마를 부딪치게 하여 상기 기판상에 다이아몬드막을 형성시키는 단계들로 구성되는 다이아몬드 증착법.
  2. 수소함유 가스와 가스상 탄소화합물을 양극과 음극을 갖는 열프라즈마 발생장치내로 공급하는 단계, 전극들간의 직류 아크방전에 의해서 이 가스를 래디칼화 하는 단계, 프라즈마 제트로서 감압된 챔버내로 열프라즈마를 분사하는 단계, 상기 프라즈마 제트를 냉각된 기판상에 부딪치게 하여 프라즈마 제트를 급냉시켜 기판상에 다이이아몬드막을 증착시키는 단계들로 구성되는 직류 아크방전에 의한 다이아몬드 증착법.
  3. 제 2 항에 있어서, 가스상의 탄소화합물은 탄화수소 또는 분자상의 산소, 질소 또는 할로겐을 함유하는 탄화수소인 것을 특징으로 하는 다이아몬드 증착법.
  4. 제 2 항에 있어서, 수소함유 가스 또는 가스상의 탄소화합물이 불활성가스, 산화성가스 또는 그들의 혼합물을 더 포함하는 것을 특징으로 하는 다이아몬드 증착법.
  5. 제 4 항에 있어서, 산화성가스는 산소, 물, 과산화수소 또는 일산화탄소인 것을 특징으로 하는 다이아몬드 증착법.
  6. 제 2 항에 있어서, 수소함유 가스 및 가스상의 탄소화합물이 열프라즈마 발생장치의 전극들간에 공급되는 것을 특징으로 하는 다이아몬드 증착법.
  7. 제 2 항에 있어서, 수소함유 가스는 열프라즈마 발생장치의 전극들간에 공급되고 탄소화합물 함유 가스는 전극들 사이로부터 분사된 프라즈마로 공급되는 것을 특징으로 하는 다이아몬드 증착법.
  8. 제 2 항에 있어서, 직류 아크방전이 전극으로서 탄소전극 또는 희토류 산화물을 함유하는 텅스텐 전극을 사용하여 행해지는 것을 특징으로 하는 다이아몬드 증착법.
  9. 둘러싸인 몸체내에서 열려있고, 하나의 극성을 형성하고 있는 복수의 노즐의 내벽들과 반대극성의 복수의 전극들간에 직류전류를 가함으로써 아크방전을 행하는 단계, 수소와 가스상 탄소화합물 함유 가스를 래디칼화하여 열프라즈마를 형성시키는 단계, 프라즈마 제트로서 감압 챔버내로 열프라즈마를 분출시키는 단계, 냉각된 기판상에 상기 프라즈마 제트를 부딪치게 하여 기판상에 다이아몬드막을 증착시키는 단계들로 구성된 다이아몬드 증착법.
  10. 제 9 항에 있어서, 가스상의 탄소화합물이 분자상의 산소, 질소 또는 할로겐 함유 탄소화합물인 것을 특징으로 하는 다이아몬드 증착법.
  11. 제 9 항에 있어서, 수소함유 가스 또는 가스상 탄소화합물이 불활성가스, 산화성가스 또는 그들의 혼합물을 더 포함하는 것을 특징으로 하는 다이아몬드 증착법.
  12. 제 9 항에 있어서, 산화성가스는 산소, 물, 과산화수소 또는 일산화탄소인 것을 특징으로 하는 다이아몬드 증착법.
  13. 제 9 항에 있어서, 수소함유 가스와 가스상의 탄소화합물이 열프라즈마 발생장치의 전극들간에 공급되는 것을 특징으로 하는 다이아몬드 증착법.
  14. 제 9 항에 있어서, 수소함유 가스는 옆프라즈마 발생장치의 전극들 간에 공급되고, 탄소화합물을 함유하는 가스는 전극들 사이로부터 분출되는 프라즈마 제트로 공급되는 것을 특징으로 하는 다이아몬드 증착법.
  15. 제 9 항에 있어서, 직류 아크방전이 전극으로서 탄소전극 또는 회토류 산화물을 함유하는 텅그스텐 전극을 사용하여 행해지는 것을 특징으로 하는 다이아몬드 증착법.
  16. 양극과 음극을 갖고 있는 토치형태의 열프라즈마 발생장치로 가스를 공급하는 단계, 전극간의 직류 아크방전에 의해서 가스를 래디칼화 하여 열프라즈마를 형성시키는 단계, 토치의 선단 팁에서 노즐을 통하여 프라즈마 제트로서 형성되는 열프라즈마를 분사시키고, 냉각가스를 프라즈마 제트로 불어 넣어 열프라즈마를 급냉시키고 프라즈마 제트로 공급된 가스상의 탄소화합물의 래디칼화에 의해서 형성된 적어도 래디칼 생성물을 함유하는 고농도의 래디칼을 갖는 활성 비평형 프라즈마를 형성하고, 이 비평형 프라즈마와 기판을 접촉시켜 기판상에 다이아몬드 막을 증착시키는 단계들로 구성되는 다이아몬드 증착법.
  17. 제16항에 있어서, 수소가 공급가스내에나 냉각가스내에 또는 이들 양자내에 함유되는 것을 특징으로 하는 다이아몬드 증착법.
  18. 제 16 항에 있어서, 가스상의 탄소화합물이 공급가스내나 냉각가스내에 또는 이들 양자내에 함유되는 것을 특징으로 하는 다이아몬드 증착법.
  19. 제 16 항에 있어서, 가스상의 탄소화합물이 분자상의 산소, 질소 또는 할로겐을 함유하는 탄화수소인 것을 특징으로 하는 다이아몬드 증착법.
  20. 제 16 항에 있어서, 불활성가스가 공급가스내나 냉각가스내에 또는 이들 양자내에 함유되는 것을 특징으로 하는 다이아몬드 증착법.
  21. 제 20 항에 있어서, 불활성가스 및 산화성 가스가 노즐로부터 분사되는 프라즈마로 공급되는 공급가스내나 냉각가스내에 또는 이들 양자내에 함유되는 것을 특징으로 하는 다이아몬드 증착법.
  22. 제 21 항에 있어서, 산화성가스가 산소, 물, 과산화탄소, 또는 일산화탄소인 것을 특징으로 하는 다이아몬드 증착법.
  23. 제 21 항에 있어서, 직류 아크방전이 전극으로서 탄소전극이나 회토류 산화물을 함유하는 텅그스테 전극을 사용하여 행해지는 것을 특징으로 하는 다이아몬드 증착법.
  24. 내부에서 열린 열프라즈마 분사용 노즐과 방전가스 공급 파이프를 갖고 둘러싸인 몸체로 구성되고 제 1 극성을 갖는 전극형성 부재, 상기 둘러쌓인 몸체의 상기 노즐에 대향하여 위치되는 반대극성을 갖는 전극 형성 부재, 상기 제 1 극성의 전극과 상기 반대극성의 전극간에 직류전압을 인가하기 위한 직류전원과 도선을 갖고 있는 전원 시스템을 가지며 직류전압이 가해진 전극들 사이로 상기 방전가스 공급 파이프를 통하여 가스를 공급하여 상기 가스 전극간의 직류 아크방전에 의해서 열 프라즈마로 형성시키고 이 열프라즈마를 상기 노즐을 통하여 프라즈마 제트로서 형성된 열프라즈마를 분사하는 직류 프라즈마 토치 증착을 위하여 가스상의 스타팅 화합물을 상기 프라즈마 제트로 공급하는 스타팅 가스 공급 시스템, 열프라즈마를 급냉시켜 증착을 위하여 프라즈마 제트로 공급되고, 고농도의 래디칼들을 갖는 스타팅 화합물의 래디칼화에 의해서 형성된 적어도 래디칼 생성물을 함유하는 활성 비평형 프라즈마를 형성하도록 냉각가스를 상기 프라즈마 제트에 대해서 불어넣기 위한 상기 프라즈마 토치의 노즐 근방에 배치된 냉각가스 분사노즐들을 갖고 있는 냉각가스 공급수단을 포함하고 있는 비평형 프라즈마 형성수단, 상기 비평형 프라즈마내에 기판을 지지하여 열프라즈마 화학증착막을 지지하여 열프라즈마 화학증착막을 상기 기판상에 증착시키기 위한 기판 지지기구들로 구성되는 다이아몬드 증착장치.
  25. 음극과 양극 사이에 방전가스를 공급하는 동안에 음극과 양극을 갖고 있는 DC프라즈마 토치에 의해서 아크방전을 행하고 처리될 기판 위로 기판상에 다이아몬드막이 형성되도록 프라즈마제트를 조사하는 다이아몬드 증착법에 있어서, 이 방법이 적어도 2개의 프라즈마 토치들을 사용하고 하나의 토치내에서 높은 방전전압으로 가스를 프라즈마로 형성하고 나머지 토치내에서 낮은 방전 전압으로 반응가스상 탄소화합물을 프라즈마로 형성하고 이 두 프라즈마를 제트로서 기판상에 부딪치게 하여 기판상에 다이아몬드막을 형성시키는 다이아몬드 증착법.
  26. 제 25 항에 있어서, 높은 방전전압을 갖는 가스는 수소인 것을 특징으로 하는 다이아몬드 증착법.
  27. 제 25 항에 있어서, 가스상의 탄소화합물은 탄화수소 또는 분자성의 산소, 질소, 또는 할로겐 함유 탄화수소인 것을 특징으로 하는 다이아몬드 증착법.
  28. 제 25 항에 있어서, 복수의 토치들이 복수의 프라즈마 제트들을 발생하도록 하여 이들 제트들을 서로 부딪치게 하여 상기 프라즈마 제트내에 탄소원을 프라즈마로 형성시켜 다이아몬드를 형성시키는 것을 특징으로 하는 다이아몬드 증착법.
  29. 제 28 항에 있어서, 복수의 프라즈마 토치들을 사용하고 탄소화합물을 프라즈마로 형성시키고, 복수의 프라즈마 제트들을 서로 부딪치게 하고 이 프라즈마가 상기 프라즈마 제트들내에서 급냉시켜 기판상에 조사하여 기판상에 균등하고 원활한 다이아몬드를 형성시키는 것을 특징으로하는 다이아몬드 증착법.
  30. 방전가스와 적어도 가스상의 탄소화합물을 함유하는 스타팅 물질을 아크방전에 의해서 열프라즈마로 형성하는 단계, 프라즈마 제트로서 열프라즈마를 분사하는 단계, 이 프라즈마 제트를 급냉하여 기판상에 다이아몬드막을 증착시키고 상기 아크방전을 불안정하게 하는 가스상의 탄소화합물을 상기 아크방전부를 통과시키지 않고 프라즈마 제트 개시단의 중심으로 공급하는 단계들로 구성되는 다이아몬드 증착법.
  31. 제 30 항에 있어서, 방전가스가 수소, 불활성가스, 또는 이들 양자의 혼합물인 것을 특징으로 하는 다이아몬드 증착법.
  32. 제 30 항에 있어서, 스타팅 물질이 수소, 불활성가스 및 산화성 가스로 되는 그룹으로부터 선택되는 것을 적어도 하나 이상 포함하는 것을 특징으로 하는 다이아몬드 증착법.
  33. 제 30 항에 있어서, 스타팅 물질로서 미소량의 뽀론, 질소 또는 인의 수소화물을 프라즈마 제트내에 함유되는 것을 특징으로 하는 다이아몬드 증착법.
  34. 제 30 항에 있어서, 프라즈마 제트를 기판상에 부딪치게 함으로써 상기 기판상에 다이아몬드막을 에피택실 성장시키는 것을 특징으로 하는 다이아몬드 증착법.
  35. 제 24 항에 있어서, 직류 프라즈마 토치는 둘러싸인 몸체를 형성하는 외부 전극과 외측 전극을 통하여 연장되며 전기적으로 절연된 내부 전극을 포함하며, 상기 외부 전극이 방전가스 공급 입구와 개방된 분사노즐을 가지며, 상기 내부 전극의 단부의 측면이 외부 전극의 분사노즐의 측면과 가까워 서로 아크방전면을 형성하고 내부 전극의 중심축선에 연하여 연장되는 스타팅 가스공급 구멍이 내부 전극의 끝에서 끝면의 중심에서 개방되어 있는 것을 특징으로 하는 다이아몬드 증착장치.
  36. 제 35 항에 있어서, 전극은 희토류 산화물을 함유하는 텅그스텐 전극 또는 탄소전극인 것을 특징으로 하는 다이아몬드 증착장치.
  37. 제 24 항에 있어서, 직류 프라즈마 토치는 방전가스, 스타팅 가스 공급파이프 및 직류전원 도체가 설비되고 그 내부에서 열려있고, 프라즈마를 분사하기 위한 노즐을 갖는 둘러싸인 몸체에 있어서, 복수의 노즐들은 개방되어 있으며 각 노즐의 내벽은 동일 극성을 갖는 전극을 형성하고, 반대극성의 복수의 전극들이 각 노즐의 내벽에 대향하여 둘러싸인 몸체의 내부에 위치한 것을 특징으로 하는 다이아몬드 증착장치.
  38. 방전가스 인입 파이프, 스타팅 가스 또는 고체입자를 운반하는 가스 인입 파이프 및 직류도체가 설비되고, 뜨거운 프라즈마 제트를 분사하기 위한 노즐을 갖는 둘러싸인 몸체로 구성되는 장치가 복수의 노즐이 개방되고 각 노즐의 내벽이 각각 동일 극성의 전극을 형성하고 반대 극성을 갖는 복수의 전극들이 각 노즐의 내벽들에 대향하여 둘러싸인 몸체내에 위치되는 것이 특징인 호트 프라즈마 발생장치.
  39. 복수의 프라즈마 토치들을 사용하는 단계, 복수의 호트 프라즈마 제트들을 서로 부딪치게 하여 탄소원을 상기 프라즈마 제트내에서 프라즈마로 형성시켜 다이아몬드를 형성시키는 단계로 구성되는 다이아몬드 증착법.
  40. 둘러싸인 몸체를 외부 전극으로 형성하고, 외부 전극을 통하여 전기적 절연체와 더불어 연장되는 내부 전극으로 구성되고, 상기 외부 전극은 방전가스 인입구멍과 개방된 분사노즐을 가지며, 상기 내부 전극은 외부 전극의 분사노즐의 측벽에 가까운 단부의 측부를 가져 서로 아크방전면을 형성하고 내부 전극의 중심축선에 연하여 연장되는 스타팅 가스인 인입구멍이 내부 전극의 단부에 있는 끝면의 중심에서 개방되어 있는 프라즈마 분사장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003737A 1987-04-03 1988-04-02 다이어몬드 증착장치와 방법 KR910006784B1 (ko)

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Application Number Priority Date Filing Date Title
JP8331887 1987-04-03
JP62-083318 1987-04-03
JP62220437A JPS6433096A (en) 1987-04-03 1987-09-04 Gaseous phase synthesis for diamond
JP62-220437 1987-09-04
JP62-245853 1987-10-01
JP62245853A JPH0775689B2 (ja) 1987-10-01 1987-10-01 熱プラズマジェット発生装置
JP62-250598 1987-10-06
JP62250598A JPS6428297A (en) 1987-04-03 1987-10-06 Vapor phase synthesis of diamond
JP62257635 1987-10-13
JP62-257635 1987-10-13
JP62-257632 1987-10-13
JP62257632A JPH01100092A (ja) 1987-10-13 1987-10-13 ダイヤモンドの気相合成方法及び装置
JP62-320142 1987-12-19
JP62320142A JPH0729876B2 (ja) 1987-12-19 1987-12-19 ダイヤモンド膜の合成法
JP62-330130 1987-12-28
JP62330130A JPH01172294A (ja) 1987-12-28 1987-12-28 ダイヤモンドの気相合成方法
JP63003043A JPH01179789A (ja) 1988-01-12 1988-01-12 ダイヤモンドの気相成長方法と熱プラズマ堆積方法およびプラズマ噴射装置
JP63-003043 1988-01-12

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