DE69231790T2 - Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung - Google Patents

Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung

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Publication number
DE69231790T2
DE69231790T2 DE69231790T DE69231790T DE69231790T2 DE 69231790 T2 DE69231790 T2 DE 69231790T2 DE 69231790 T DE69231790 T DE 69231790T DE 69231790 T DE69231790 T DE 69231790T DE 69231790 T2 DE69231790 T2 DE 69231790T2
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Germany
Prior art keywords
heat
semiconductor device
device provided
dissipating component
provided therewith
Prior art date
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Expired - Fee Related
Application number
DE69231790T
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English (en)
Other versions
DE69231790D1 (de
Inventor
Tsutomo Nakamura
Takahisa Iguchi
Tetsuo Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority claimed from JP3160210A external-priority patent/JPH0513843A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69231790D1 publication Critical patent/DE69231790D1/de
Application granted granted Critical
Publication of DE69231790T2 publication Critical patent/DE69231790T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
DE69231790T 1991-07-01 1992-06-26 Wärmeabführendes Bauteil und damit versehene Halbleitervorrichtung Expired - Fee Related DE69231790T2 (de)

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Application Number Priority Date Filing Date Title
JP3160210A JPH0513843A (ja) 1991-07-01 1991-07-01 放熱部品および該放熱部品を備えた半導体レーザー
JP6347392 1992-03-19

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DE69231790T2 true DE69231790T2 (de) 2002-03-07

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US (1) US5299214A (de)
EP (1) EP0521405B1 (de)
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DE (1) DE69231790T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324987A (en) * 1993-04-14 1994-06-28 General Electric Company Electronic apparatus with improved thermal expansion match
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
US5422901A (en) * 1993-11-15 1995-06-06 Motorola, Inc. Semiconductor device with high heat conductivity
US5969414A (en) * 1994-05-25 1999-10-19 Advanced Technology Interconnect Incorporated Semiconductor package with molded plastic body
US5559817A (en) * 1994-11-23 1996-09-24 Lucent Technologies Inc. Complaint layer metallization
DE69531390T2 (de) * 1994-11-30 2004-05-27 Sumitomo Electric Industries, Ltd. Substrat, Halbleiteranordnung, Anordnung für Elementmontage
JP3542677B2 (ja) * 1995-02-27 2004-07-14 セイコーエプソン株式会社 樹脂封止型半導体装置およびその製造方法
WO1997005757A1 (en) * 1995-07-31 1997-02-13 Crystalline Materials Corporation Diamond electronic packages featuring bonded metal
DE19536463C2 (de) * 1995-09-29 2002-02-07 Infineon Technologies Ag Verfahren zum Herstellen einer Mehrzahl von Laserdiodenbauelementen
WO1997027626A1 (en) * 1996-01-26 1997-07-31 The Whitaker Corporation Integrated circuit package having enhanced heat dissipation and grounding
JP2917902B2 (ja) * 1996-04-10 1999-07-12 日本電気株式会社 半導体装置
JP4623774B2 (ja) 1998-01-16 2011-02-02 住友電気工業株式会社 ヒートシンクおよびその製造方法
US6396864B1 (en) 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
JP2000174166A (ja) * 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd 半導体搭載パッケ―ジ
WO2001011661A2 (en) * 1999-08-10 2001-02-15 Emc Technology, Inc. Passive electrical components formed on carbon coated insulating substrates
US6674775B1 (en) 2000-02-18 2004-01-06 Jds Uniphase Corporation Contact structure for semiconductor lasers
US20040120371A1 (en) * 2000-02-18 2004-06-24 Jds Uniphase Corporation Contact structure for a semiconductor component
DE10011892A1 (de) 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
US6534792B1 (en) * 2000-05-18 2003-03-18 The Boeing Company Microelectronic device structure with metallic interlayer between substrate and die
US7339791B2 (en) * 2001-01-22 2008-03-04 Morgan Advanced Ceramics, Inc. CVD diamond enhanced microprocessor cooling system
JP4815065B2 (ja) * 2001-05-30 2011-11-16 株式会社トクヤマ ヒートシンク及びその製造方法
US6760352B2 (en) * 2001-09-19 2004-07-06 The Furukawa Electric Co., Ltd. Semiconductor laser device with a diffraction grating and semiconductor laser module
AT5972U1 (de) * 2002-03-22 2003-02-25 Plansee Ag Package mit substrat hoher wärmeleitfähigkeit
US7067903B2 (en) * 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
US7352785B2 (en) * 2004-04-30 2008-04-01 Richard L. Fork Solid state laser medium and laser medium heat transfer method
KR100723144B1 (ko) * 2005-12-24 2007-05-30 삼성전기주식회사 발광다이오드 패키지
US8269338B2 (en) * 2006-08-10 2012-09-18 Vishay General Semiconductor Llc Semiconductor device having improved heat dissipation capabilities
US8018051B2 (en) * 2009-02-02 2011-09-13 Maxim Integrated Products, Inc. Thermally enhanced semiconductor package
WO2011049479A1 (en) * 2009-10-21 2011-04-28 Andrey Mikhailovich Abyzov Composite material having high thermal conductivity and process of fabricating same
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element
CN104350651B (zh) * 2012-05-22 2017-08-01 松下知识产权经营株式会社 氮化物半导体发光装置
GB201322837D0 (en) * 2013-12-23 2014-02-12 Element Six Ltd Polycrystalline chemical vapour deposited diamond tool parts and methods of fabricating mounting and using the same
CN109994923A (zh) * 2019-03-26 2019-07-09 中国科学院半导体研究所 温度探测装置及其制作方法
CN110648987B (zh) * 2019-10-11 2022-09-06 宁波施捷电子有限公司 一种界面导热材料层及其用途

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196858A (ja) * 1986-02-24 1987-08-31 Nec Corp 半導体装置
DE3884653T2 (de) * 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US5008737A (en) * 1988-10-11 1991-04-16 Amoco Corporation Diamond composite heat sink for use with semiconductor devices

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Publication number Publication date
EP0521405A1 (de) 1993-01-07
KR930003449A (ko) 1993-02-24
US5299214A (en) 1994-03-29
KR960006208B1 (ko) 1996-05-09
DE69231790D1 (de) 2001-05-23
EP0521405B1 (de) 2001-04-18

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