KR880008437A - 반도체 장치 및 그 제조방법과 이에 사용하는 와이어 본딩장치 - Google Patents
반도체 장치 및 그 제조방법과 이에 사용하는 와이어 본딩장치 Download PDFInfo
- Publication number
- KR880008437A KR880008437A KR870014962A KR870014962A KR880008437A KR 880008437 A KR880008437 A KR 880008437A KR 870014962 A KR870014962 A KR 870014962A KR 870014962 A KR870014962 A KR 870014962A KR 880008437 A KR880008437 A KR 880008437A
- Authority
- KR
- South Korea
- Prior art keywords
- bonding
- wire
- semiconductor
- semiconductor device
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims 16
- 239000010949 copper Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 26
- 239000008188 pellet Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 7
- 230000001590 oxidative effect Effects 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 241000251468 Actinopterygii Species 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000009795 derivation Methods 0.000 claims 1
- 238000009760 electrical discharge machining Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 장치에 있어서의 보올본딩부의 조직을 나타낸 모식도.
제2도는 보올본딩부의 결정입계가 LSI 칩면과의 이루는 각도 θ와 균열 발생률과의 관계를 나타낸 그래프.
제3도는 동(Cu)보올 경도와 와이어의 순도와의 관계를 나타낸 그래프.
Claims (32)
- 반도체 집적 회로 또는 트랜지스터 등의 반도체 소자가 형성되어 있는 반도체 펠리트에 있어서의 본딩패드와 외부도출 리이드가 보올 본딩에 의하여 동을 주성분으로 하는 본딩 와이어에 의하여 상호 접속되어서 되고, 반도체 팰리트 및 본딩와이어등이 봉입되어서된 반도체 장치로서, 상기 본딩 패드와 본딩 와이어의 선단부의 보올과의 접합부 계면 바로 위의 보올 주변부의 결정립의 적어도 하나가 상기 반도체 펠리트 표면과 30도 이하의 각도를 이루도록 보올이 변형 하여 상기 본딩 패드에 접합되어 있음을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 접합부 계면으로부터 30㎛의 높이의 범위내의 보올의 조직을 반도체 펠리트표면과거의 평행으로 연마후, 상부로부터 현미경으로 관찰했을 때, 결정 입자 직경의 평균치가 15㎛이하임을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 본딩 패드는 알루미늄을 주성분으로 하는 재료로써 되는 반도체 장치.
- 제1항에 있어서, 보올 본딩은 초음파 진동을 병용한 열 압착 방식에 의한 와이어 본딩인 반도체 장치.
- 제1항에 있어서, 봉입으로서는 성형용 수지에 의하여 수지 봉입되어 있는 반도체 장치.
- 제1항에 있어서, 반도체 펠리트로서는 IC가 형성되어 있는 반도체 장치.
- 제1항에 있어서, 반도체 펠리트로서는 LSI가 형성되어 있는 반도체 장치.
- 제1항에 있어서, 반도체 펠리트로서는 트랜지스터가 형성되어 있는 반도체 장치.
- 제1항에 있어서, 반도체 펠리트로서는 실리콘(Si)기판에 집적 회로 또는 트랜지스터 등의 반도체 소자가 형성되어 있는 반도체 장치.
- 반도체 집적 회로 또는 트랜지스터 등의 반도체 소자가 형성되어 있는 반도체 펠리트에 있어서의 본딩패드와 외부도출리이드가 보올 본딩에 의하여 본딩 와이어에 의하여 상호 접속되어 있으며, 반도체 펠리트 및 본딩 와이어 등이 봉입되어서 되는 반도체 장치의 제조방법으로서, 반도체 펠리트를 장착 영역에 본딩하는 공정과, 본딩 와이어의 선단부를 고온 상태의 비산화성 가스 분위기 중에 위치시키고, 그 상태에서 본딩 와이어의 선단에 방전가공에 의하여 보올을 형성하는 공정과, 상기 본딩 와이어의 선단에 형성된 보올을 반도체 펠리트의 본딩 패드에 와이어 접속공구를 사용하여 본딩하는 공정과, 상기 와이어 접속공구를 외부 도출 리이드에 이동하고, 상기 보울이 형성되어 있는 본딩 와이러를외부도출 리이드에 본딩하고, 상시 반도체 펠리트의 본딩 패드와 외부 도출 리이드를 본딩 와이어에 의하여 상호 접속하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조방법.
- 제10항에 있어서, 바산화성 가스로서는 수소를 함유하는 불활성 가스로써된 환원성 가스인 반도체 장치의 제조방법.
- 제10항에 있어서, 본딩 와이어는 동을 주성분으로 하는 반도체 장치의 제조방법.
- 제10항에 있어서, 본딩 와이어는 알루미늄 주성분으로 하는 반도체 장치의 제조방법.
- 반도체 집적 회로 또는 트랜지스터 등의 반도체 소자가 형성되어 있는 반도체 팰리트에 있어서의 본딩 패드와 외부 도출 리이드가 보올 본딩에 의하여 동을 주성분으로 하는 본딩 와이어에 의하여 상호 접속되어 있고, 반도체 펠리트 및 본딩 와이어 등이 봉입되어서 된 반도체 장치의 제조방법으로서, 반도체 펠리트를 리이드 프레임에 있어서의 펠리트 장착영역인 탭에 펠리트 본딩하는 공정과, 본딩 와이어의 선단부를 고온 상태의 비산화성 가스 분위기 중에 위치시키고, 그 상태에서 본딩 와이어의 선단에 방전가공에 의하여 보올을형성하는 공정과, 상기 본딩와이어의 선단에 형성된 보올을 반도체 펠리트의 본딩 패드에 와이어 접속 공구를 사용하여 본딩하는 공정과, 상기 와이어 접속구를 상기 리이드 프레임에 있어서의 외부도출 리이드에 이동하여, 상기 보울이 형성되어 있는 본딩 와이어를 외부 도출 리이드에 본딩하고, 상기 반도체 펠리트의 본딩 패드와 리이드 프레임의 외부 도출 리이드를 본딩 와이어에 의하여 상호 접속하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조방법.
- 제14항에 있어서, 비산화성 가스로서는 수소를 함유하는 불활성 가스로써된 환원성 가스인 반도체 장치의 제조방법.
- 제14항에 있어서, 고온 상태의 비산화성 가스는 100~200℃의 온도 조건의 것인 반도체 장치의 제조방법.
- 제14항에 있어서, 고온 상태의 비산화성 가스는 150~200℃의 온도 조건의 것인 반도체 장치의 제조방법.
- 제14항에 있어서, 방전 가공은 본딩 와이어를 양극으로 하고, 방전 전극을 음극으로 하여, 본딩 와이어의 선단과 방전 전극과의 사이에 방전을 행하는 반도체 장치의 제조방법.
- 제14항에 있어서, 와이어 접속공구는 캐필러리인 반도체 장치의 제조방법.
- 제14항에 있어서, 반도체 펠리트는 복수개의 본딩 패드가 형성되어서된 반도체 장치의 제조방법.
- 제14항에 있어서, 반도체 펠리트는 반도체 소자가 형성되어 있는 실리콘(Si)기판을 갖는 반도체 장치의 제조방법.
- 제14항에 있어서, 본딩은 초음파 진동을 병용한 열 압착 방식의 보올본딩인 반도체 장치의 제조방법.
- 본딩 와이어의 선단부와 방전 전극과의 사이에 아아크를 발생시키고, 이 본딩 와이어의 선단부에 보올을 형성하는 와이어 본딩장치에 있어서, 본딩 와이어의 선단부를 공급하는 와이어 접속공구와 방전전극과의 사이의 공간에 고온의 가스를 공급하는 가스 공급수단을 갖고, 상기 가스 공급수단은 방전전극과 동일 이동 경로를 갖고, 동작하는 이동 장치를 구비하고 있음을 특징으로 하는 와이어 본딩 장치.
- 제23항에 있어서, 가스 공급 수단에는 가스를 100~200℃로 가열할 수 있는 히이터가 부설되어 있는 와이어 본딩장치.
- 제23항에 있어서, 방전전극에는 방전전원에 있어서의 음극이 접속되어 있는 와이어 본딩장치.
- 제23항에 있어서, 가스 공급 수단은 그 가스공급 출구부가 방전전극에 고정되어 있는 와이어 본딩장치.
- 제23항에 있어서, 와이어 접속공구는 초음파 진동을 병용하는 열압착 방식의 보올 본딩용 캐필러리인 와이어 본딩장치.
- 본딩 와이어의 선단을 방전에 의하여 구형화함과 동시에 이 구형부를 피본딩체에 열압착하여 와이어를 피본딩체에 접속하도록 구성된 와이어 본딩장치로서, 적어도 방전시, 상기 본딩 와이어 선단부분에 고온의 환원성 가스를 공급하는 가스 공급 수단을 갖는 것을 특징으로 하는 와이어 본딩장치.
- 제28항에 있어서, 상기 가스공급 수단은 흡출가스의 온도가 100~200℃로 설정할 수 있는 히이터를 갖는 것을 특징으로 하는 와이어 본딩장치.
- 피가공물의 주위에 수소를 4%미만 함유하는 혼합가스를 공급하는 가스 공급수단을 갖는 것을 특징으로 하는 와이어 본딩장치.
- 제30항에 있어서, 가스 공급수단이 와이어 선단에 생선되는 보올에 수소를 3%미만 함유하는 혼합가스를 공급하도록 구성되어 있음을 특징으로 하는 와이어 본딩장치.
- 제30항에 있어서, 가스 공급수단이 리이드 페레임에 수소를 4%미만 함유하는 혼합가스를 공급하도록 구성되어 있음을 특징으로 하는 와이어 본딩장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61308435A JPS63164230A (ja) | 1986-12-26 | 1986-12-26 | ワイヤボンディング方法 |
JP61-308435 | 1986-12-26 | ||
JP60-84758 | 1987-04-08 | ||
JP62084758A JPS63250828A (ja) | 1987-04-08 | 1987-04-08 | 半導体装置 |
JP62-128245 | 1987-05-27 | ||
JP62128246A JPS63293933A (ja) | 1987-05-27 | 1987-05-27 | ワイヤボンディング方法およびワイヤボンディング装置 |
JP62128245A JP2645014B2 (ja) | 1987-05-27 | 1987-05-27 | ワイヤボンディング装置 |
JP62-128246 | 1987-08-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR880008437A true KR880008437A (ko) | 1988-08-31 |
Family
ID=27467005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR870014962A KR880008437A (ko) | 1986-12-26 | 1987-12-26 | 반도체 장치 및 그 제조방법과 이에 사용하는 와이어 본딩장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4976393A (ko) |
EP (1) | EP0276564B1 (ko) |
KR (1) | KR880008437A (ko) |
DE (1) | DE3777384D1 (ko) |
HK (1) | HK59294A (ko) |
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US5065932A (en) * | 1990-09-24 | 1991-11-19 | International Business Machines Corporation | Solder placement nozzle with inert cover gas and inert gas bleed |
JP2598192B2 (ja) * | 1991-12-06 | 1997-04-09 | 株式会社東芝 | 半導体製造装置 |
US5295619A (en) * | 1992-05-22 | 1994-03-22 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
JP3218380B2 (ja) * | 1995-03-22 | 2001-10-15 | 株式会社新川 | テープボンディング装置 |
JP3158338B2 (ja) * | 1995-09-18 | 2001-04-23 | 株式会社新川 | ボンデイング装置用加熱装置 |
US6180891B1 (en) * | 1997-02-26 | 2001-01-30 | International Business Machines Corporation | Control of size and heat affected zone for fine pitch wire bonding |
JPH1140595A (ja) * | 1997-07-16 | 1999-02-12 | Mitsubishi Electric Corp | ワイヤ配線方法、このワイヤ配線方法に使用する配線分岐パッド、および、ボンディング装置、並びに、ワイヤ配線方法をコンピュータに実行させるためのプログラムを記録したコンピュータ読み取り可能な記録媒体 |
DE19812706A1 (de) * | 1998-03-23 | 1999-10-07 | F&K Delvotec Bondtechnik Gmbh | Verfahren und Vorrichtung zum "ball-bonden" |
US6234376B1 (en) * | 1999-07-13 | 2001-05-22 | Kulicke & Soffa Investments, Inc. | Supplying a cover gas for wire ball bonding |
US6207551B1 (en) * | 1999-08-24 | 2001-03-27 | Conexant Systems, Inc. | Method and apparatus using formic acid vapor as reducing agent for copper wirebonding |
JP2003037131A (ja) * | 2001-07-25 | 2003-02-07 | Sanyo Electric Co Ltd | ボンディング装置 |
JP3621368B2 (ja) * | 2001-10-18 | 2005-02-16 | 株式会社新川 | ワイヤボンディング装置におけるボール形成装置 |
JP2003142518A (ja) * | 2001-11-02 | 2003-05-16 | Nec Electronics Corp | 半導体製造装置、半導体製造方法、半導体装置及び電子装置 |
TWI287282B (en) * | 2002-03-14 | 2007-09-21 | Fairchild Kr Semiconductor Ltd | Semiconductor package having oxidation-free copper wire |
EP1382412A1 (de) * | 2002-07-19 | 2004-01-21 | Esec Trading S.A. | Vorrichtung mit einer Elektrode für die Bildung einer Kugel am Ende eines Drahtes |
TWI222388B (en) * | 2002-07-19 | 2004-10-21 | Esec Trading Sa | Device with an electrode for the formation of a ball at the end of a wire |
US7271497B2 (en) * | 2003-03-10 | 2007-09-18 | Fairchild Semiconductor Corporation | Dual metal stud bumping for flip chip applications |
US7628307B2 (en) * | 2006-10-30 | 2009-12-08 | Asm Technology Singapore Pte Ltd. | Apparatus for delivering shielding gas during wire bonding |
DE102007057429A1 (de) * | 2007-11-29 | 2009-06-04 | Linde Ag | Vorrichtung und Verfahren zum Drahtbonden |
JP4987823B2 (ja) * | 2008-08-29 | 2012-07-25 | 株式会社東芝 | 半導体装置 |
US20100059883A1 (en) * | 2008-09-05 | 2010-03-11 | Freescale Semiconductor, Inc. | Method of forming ball bond |
US7938308B1 (en) * | 2009-04-24 | 2011-05-10 | Amkor Technology, Inc. | Wire bonder for improved bondability of a conductive wire and method therefor |
TWI447834B (zh) * | 2011-01-26 | 2014-08-01 | Chipmos Technologies Inc | 半導體打線機台之調校量具及其調校方法 |
JP5618974B2 (ja) * | 2011-08-16 | 2014-11-05 | 株式会社新川 | ワイヤボンディング装置 |
JP5651575B2 (ja) * | 2011-12-27 | 2015-01-14 | 株式会社カイジョー | ワイヤボンディング装置及びワイヤボンディング方法 |
WO2013111452A1 (ja) | 2012-01-26 | 2013-08-01 | 株式会社新川 | 酸化防止ガス吹き出しユニット |
JP2014075519A (ja) | 2012-10-05 | 2014-04-24 | Shinkawa Ltd | 酸化防止ガス吹き出しユニット |
WO2014054305A1 (ja) | 2012-10-05 | 2014-04-10 | 株式会社新川 | 酸化防止ガス吹き出しユニット |
JP5916814B2 (ja) * | 2014-08-06 | 2016-05-11 | 株式会社カイジョー | ボンディング方法及びボンディング装置 |
JP6680239B2 (ja) * | 2017-02-20 | 2020-04-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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US3838240A (en) * | 1973-04-04 | 1974-09-24 | Rca Corp | Bonding tool and method of bonding therewith |
US4387283A (en) * | 1981-08-03 | 1983-06-07 | Texas Instruments Incorporated | Apparatus and method of forming aluminum balls for ball bonding |
JPS58143540A (ja) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | ワイヤボンデイング装置 |
JPS58154241A (ja) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | 半導体装置及びその製法 |
JPS58169918A (ja) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | ワイヤボンダ |
JPS607137A (ja) * | 1983-06-27 | 1985-01-14 | Shinkawa Ltd | ワイヤボンダ用ボ−ル形成装置 |
FR2555813B1 (fr) * | 1983-09-28 | 1986-06-20 | Hitachi Ltd | Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif |
JPS60223149A (ja) * | 1984-04-19 | 1985-11-07 | Hitachi Ltd | 半導体装置 |
DE3577371D1 (de) * | 1984-07-27 | 1990-05-31 | Toshiba Kawasaki Kk | Apparat zum herstellen einer halbleiteranordnung. |
US4705204A (en) * | 1985-03-01 | 1987-11-10 | Mitsubishi Denki Kabushiki Kaisha | Method of ball forming for wire bonding |
JPS61290732A (ja) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | ワイヤボンデイング方法 |
JPS62219935A (ja) * | 1986-03-22 | 1987-09-28 | Nec Kansai Ltd | ワイヤボンデイング装置 |
-
1987
- 1987-12-17 US US07/134,458 patent/US4976393A/en not_active Expired - Lifetime
- 1987-12-21 EP EP87311245A patent/EP0276564B1/en not_active Expired - Lifetime
- 1987-12-21 DE DE8787311245T patent/DE3777384D1/de not_active Expired - Lifetime
- 1987-12-26 KR KR870014962A patent/KR880008437A/ko not_active Application Discontinuation
-
1994
- 1994-06-23 HK HK59294A patent/HK59294A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0276564B1 (en) | 1992-03-11 |
US4976393A (en) | 1990-12-11 |
DE3777384D1 (de) | 1992-04-16 |
EP0276564A1 (en) | 1988-08-03 |
HK59294A (en) | 1994-07-08 |
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