JPS58154241A - 半導体装置及びその製法 - Google Patents

半導体装置及びその製法

Info

Publication number
JPS58154241A
JPS58154241A JP57036468A JP3646882A JPS58154241A JP S58154241 A JPS58154241 A JP S58154241A JP 57036468 A JP57036468 A JP 57036468A JP 3646882 A JP3646882 A JP 3646882A JP S58154241 A JPS58154241 A JP S58154241A
Authority
JP
Japan
Prior art keywords
wire
bonding
electrical device
annealed
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57036468A
Other languages
English (en)
Other versions
JPH0514425B2 (ja
Inventor
Hitoshi Onuki
仁 大貫
Masateru Suwa
正輝 諏訪
Masahiro Koizumi
小泉　正博
Tomio Iizuka
飯塚　富雄
Tateo Tamamura
玉村　建雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57036468A priority Critical patent/JPS58154241A/ja
Priority to DE3382828T priority patent/DE3382828T2/de
Priority to DE3382826T priority patent/DE3382826T2/de
Priority to DE8383300956T priority patent/DE3381665D1/de
Priority to EP89202085A priority patent/EP0348018B1/en
Priority to EP83300956A priority patent/EP0088557B1/en
Priority to EP89202084A priority patent/EP0349095B1/en
Priority to KR1019830000939A priority patent/KR910000154B1/ko
Publication of JPS58154241A publication Critical patent/JPS58154241A/ja
Priority to US07/818,457 priority patent/US5153704A/en
Publication of JPH0514425B2 publication Critical patent/JPH0514425B2/ja
Granted legal-status Critical Current

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Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は新規な電気的装置とその製法及びそれに用いる
ボンデング用ワイヤとその製法に係り、特に、ボールボ
ンデングされた半導体素子を有する半導体装置及びその
ボンディング用ワイヤとその製法に関する。
現在、半導体装置（−ＩＣ，ＬＳｌ、トランジスタ）と
して、半導体素子とパッケージの外部ＩＪ−ドフレーム
との接続に、直径２０〜５０μｍのＡμワイヤが多く使
用されている。半導体素子へのワイヤの接続は、Ａｕワ
イヤの先端に放電又は水素火炎により自らの溶融によυ
ボールを形成し、そのボールを半導体素子に直接又はめ
つき膜を介して熱圧着又は超音波接合によって行われて
いる。
一方、リードフレームへの接続は、キャピラリーによっ
てウェッジボンデングされている。
しかし、Ａｕワイヤは高価なことからその代りにＡｔワ
イヤを使用することが検討されている。
Ａｔワイヤのボンデングにおいても前述のように熱圧着
又は超音波接合が検討されている。しかし、従来のＡｔ
ワイヤは加工されたままである。発明者らは、このもの
の熱圧着又は超音波接合のいずれにおいても、接合部近
傍のワイヤ部分が加熱され軟かくなる結果、半導体素子
からリードフレーム趨子への接続に際して第１図に示す
ように接合部で局部的な変形が生じること、及びこのよ
うな局部的な変形がワイヤを局部的に細くさせるだけで
なく、断線等の原因になること、、を、、：１見い出し
た。
更に発明者らは、Ａｔワイヤのボールボンデングについ
て検討した結果、従来のＡｔワイヤは前述の如く加工さ
れた壕までケースに巻かれてｉるので、その先端にボー
ルを形成する際に、第３図に示すように弾性的に屈曲し
ている丸め、ボールが偏心して形成されること、及びボ
ールの形成の際には、先端だけでなくその近傍も加熱さ
れるので、焼なましを受ける状態となりボール直上でワ
イヤが軟化したシ、局部的にくびれたりするという問題
がある仁とを見い出し友。
そして、ボールの偏心は、ボンデング部がパッドからは
み出し、他のボンデング部と短絡を引き起したシ、回路
を傷っけたりする原因になることを見い出し友。
まえ、発明者らは、ボール直上にくびれが生じた９、軟
化しえすすると、焼なましを受けていない部分は加工硬
化を受けた状態のままであるから、第２図に示すように
ワイヤの残留加工歪により、ワイヤとボンデング部とが
きれいな曲線を描かずに折れ曲った形でワイヤポシデン
グされ、これが断線の原因となること、特に□半導体素
子とリードフレームとの接合面に段差を有するシュアル
インライン臘ＩＣ，ＬＳＩでは第２図に示すようにワイ
ヤと半導体素子との短絡（矢印）の大きな原因となるこ
とを見い出し友。
本発明の目的は、局部的な変形の少ないワイヤによって
電気的に接続され、良電気的装置とその製法及びそのボ
ンデング用ワイヤとその製法を提供すゐにある。
本発明は、回路素子間を細径ワイヤによって同相接合し
て電気的に接続してなるものにおいて、前記ワイヤは焼
なまし状態で室温の伸び率が６０−以下である金属から
なり、且つ焼なましされていることを特徴とする電気的
装置にある。
焼なまし状態で室温の伸び率が６０−以下の金属ワイヤ
は加工され九１１では加工硬化が著しく、ワイヤが硬化
しているので、ボールの六面に形成された酸化皮膜が前
述の熱圧着又は超音波接合において破壊しにくく、その
ため接合が困難になる。
史に、前述のように接合時の加熱によって接合部近傍が
軟化されるので、特に局部的な変形率が大きい。このよ
うな伸び率を有する金属ワイヤは焼なましされた軟いも
のにする必要があることを見出した。焼なましによって
、ワイヤ自体が全体に軟かくなり、局部的な変形がなく
、断線等の問題が解消される。
ワイヤは、室温の比抵抗が１５μΩ圀以下のものが好ま
しく、ｋｌ、Ｃｕ、Ａｇ、Ｎ　ｉ、Ｍｏ。
Ｐｄ、Ｐｔ、Ｚｒ、Ｔ　ｔ、　Ｎｂ及びＴｈから選ばれ
たものが好ましい。特に、ＡｔＩ　Ｎ　ｉ　、　Ｃｕ　
。
Ｐｄ及びムｇｌｌが好ましい。
ボンデングには、ポールボンデング及びウェッジボンデ
ングがあり、超音波接合又は熱圧着によって行われるが
、回路素子が半導体素子である場合は、接合間隔に制限
があるのでポールボンデングが好ましく、外部端子の場
合は、高能率のウェッジボンデングが好ましい。ボール
は、キャピラリーに保持されたワイヤ先端を放電、水素
火炎。
プラズマ、アーク、レーザービーム等の加熱溶融し、自
らの張力によって形成される。特に、ワイヤ自体と他の
電極との間にアーク放電させて形成させる方法が好まし
い。このアーク放電はワイヤをマイナスとして行うこと
によりその表面に酸化膜のない清浄なボールかで趣ると
ともに偏心のないボールが形成される。ま九、アーク放
電において正及び負の少なくとも一方のパルス電流を流
すこともでき、仁のパルス電流によってボール形成に必
要な適正なアーク発生時間をコントロールすることがで
きる。正負の電流を流す場合には、クリーニングに必要
な時間とボール形成に必要な時間とを正負の時間比を変
えることによってコントロールすることができる。クリ
ーニングに必要な時間（放電時間の１０〜３０−）は放
電時間のうちのほんのわずかでよい。
ボール形成における加熱溶融雰囲気は非酸化性雰囲気が
好ましい。特に、不活性ガス中に少量、好ましくは５〜
１５体積−の還元性ガス（例えば水素ガス）を含むもの
が好ましい。この還元性ガスを含む雰顕気は、ムＬ、、
Ｔｉ、Ｎｂ、Ｚｒ等の１ 酸素との親和力の高−金属で好ましい。特にＡｔは水素
ガスを５〜１５体積−を含むものが好ましい。
ボール径は基本的には任意であるがワイヤ径の１．５〜
４倍が好ましく、特に２５〜＆５倍が好ましい。
ワイヤの太さは、金属の種類によって異なるが。
直径２０〜１００μｍが好ましい。−例で、Ａｔは５Ｑ
μｎｎＸＣｕは３０　ｐｍ＠ＦＬテｈ　り、比抵抗等を
考慮してワイヤ径が選定される。
焼なまし温度は、金属の種類によって異なるが、再結晶
温度以上であることが好しく、特に弾性変形しない程度
にはＶ完全に焼なましされる温度で完全焼なましするの
が好ましい。ワイヤは局部的に硬さが異なると前述のよ
うに局部的な変形を生じるので、全体に同じ硬さを有す
るように軟化していることが好ましい。焼なまし温度は
、−例として、Ａｌ１５０〜４００ｒ、Ｃｕ４００〜６
００Ｃ’、Ｎｊ６５０〜８００Ｃ，Ａｇ２５０〜４００
Ｃ，Ｔ　ｊ　　４　Ｇ　Ｏ〜１１，００ｒ、ＭＯ１００
０〜１１００Ｃ，Ｐｄ、Ｐｔ８００〜１０００Ｃが好ま
しい。
ワイヤは加工したままのものを回路素子に接合するとき
に焼なましすることができるが、予め焼なましされ良も
のをボンデングする方がはるかに能率的である。
回路素子に接合後のワイヤはキャピラリーに保持された
形で引っ張ることによって回路素子の接合部近傍で切断
される。この切断はワイヤ自体全体が軟かいので、回路
素子近傍で切断するのが困難となる。カッターで切断す
るのが好ましい。
ワイヤは前述のように非常に細径で軟かいので、これを
保躾するために半導体素子とワイヤと外部端子の一部を
樹脂又はセラミックで被うことが行われる。樹脂は液体
をキャスティング又はモールドし硬化させ、セラミック
スは通常の方法でキャップシール接合される。
本発明は、焼なまし状態で室温の伸び率が６０−以下で
ある金属からなるワイヤであって、且つ焼なましされて
いることを特徴とするボンデング用ワイヤにある。
本発明のワイヤはボールボンデング用ワイヤとして特に
好ましい特性を有する。
焼な壕しは、非酸化性雰囲気中で、再結晶温度以上で行
う必要がある。４１１に弾性変形が起らない＠度に完全
焼なまし処理するのが好ましい。
実施例１ 第４図は本発明の焼なましされたＣｕワイヤ１をセラミ
ックパッケージ型半導体装置に適用し友ものの断面図で
ある。ＣＬＩワイヤは直径３０μｍで、ムｒガス中で４
００Ｇ、１時間加熱の完全焼なまし処理されたものであ
る。ボンデングは、通常のウェッジボンダーによって超
音波接合したものである６図に示すように、本発明によ
れば、ワイヤは軟いため接合自体もきわめて容易である
ばかりでなく、全体に軟いため所望のループ形状に接合
できることが確信された。４はＡｇめつき１０されたＣ
ｕリードフレーム、８は半導体素子３の表面に形成され
九Ａｔ蒸着膜による電極、７゜１１はセラミックペース
、９は低融点ガラスである。
図に示されるように、本発明の半導体装置は、ボンデン
グワイヤの局部的な変形がなく、マた、所望のループ形
状が得られることから、素子３とリードフレーム４とに
段差があってもワイヤが素子に翅絡するようなことがな
い。
実施例２ 第５図は本発明の焼なましされたＡｔワイヤ１をＶジン
モールド蓋半導体装置に雇用し九ものの断面図である。
Ａｔワイヤは直１１５０μｍで、Ｎ３ガス中で２ｓ（１
’、１時間加熱の完全焼なまし処理されたものである。
Ａｔワイヤ１はＡｔ蒸着ａｌＩ８が設けられた半導体素
子３にボールボンデングされ、ムｇめっき層ｌＯが設け
られたリードフレーム４にはウェッジボンデングされて
いる。
ボールボンデングされた後、ＳｔＯ，等の保ａ皮膜１３
が設けられ、その後置を使って液状の樹脂を流し込み、
硬化させることにより図の半導体装置が形成される。
ボンデングは第３ｗＡに示すキャピラリー２にＡｔワイ
ヤを押し出し、放電による方法によって行われる。前述
のＡｔワイヤを；誓空排気した後、７チ（体積）の水素
を含むＡｒガス雰囲気で置換した雰−気中で、１，０Ｏ
ＯＶ、１０〜２０ｎムの放電条件で放電させて、その先
端にボールを形成させた。放電は、他に設は九Ｗ電極５
をワイヤに移動させることによって行われ、その時間を
電極の移動速度と、通電をパルス化して適宜定められた
周波数によってコントロールした。また、通電は正負の
パルス電流によって行い、ワイヤがクリーニングされる
側の通電を少なくして行った。得られたボールをキャピ
ラリー２によって半導体素子に超音波接合し、次いで、
他端をリードフレーム４に同じく超音波接合した。
この方法によって得られたボールはわずかにワイヤ軸方
向に長いたまご形のものが形成されたが、嵐好な球に近
いものであった。このボールはワイヤ自体の硬さとはＶ
等しく、図に示すようにボール近傍での局部的な変形が
なく、きれいなループ状のワイヤボンデングが得られる
ことが確認された。また、ノエツジボンでフグ後のワイ
ヤの切断はキャピラリーを持ち上げて引張ることによっ
て行われるが、その切断もワイヤが軟いためきわめて容
易で、更にその引張りによってボンデング部分を剥離す
るようなことも全く起らなかった。
このように本発明の半導体装置はボールボンデングにお
いて、ワイヤの局部的な変形がなく、所望のループが得
られることから局部的な変形による断線の心配がなく、
またワイヤが素子に短絡するような事故も生じないもの
であう九。
実施例３ 直１１３０／Ｊｍの加工の１１のＣ１ｌワイヤと、それ
をＡｒガス中で＋ｏｏｔｌ：’、１時間加熱による完全
焼なまし処理を施したものについて、第２図に示す方法
でワイヤ先端にボールを形成させた。
放電は、電圧ｔｏｏｏｖ、電流１０〜２０ｍＡ。
及びＡｒガス中で行つ九。放電時間は前述のようにＷ電
極５の移動速度及びパルスの周波数によってコントロー
ルし九。
上述と同様に直［５０μｍの加工したｔまのＡ／、ワイ
ヤと、それを２５０１：ｌ’で、１時間加熱による完全
焼なまし処理したものについて同じくボールを形成させ
た。放電条件はＣｕとはｙ同じである。
Ｃｕ及びＡｔワイヤのいずれも５０個ずつボ−ルを形成
し、ボールのくびれ及び偏心が生じたものの数を調べ、
その割合を求めた。その結果を、第４図に示す。
図に示す如く、加工したｔまのＡｔワイヤはくびれが６
０％、偏心が５〇−生じるのに対し、焼なまし九ものは
くびれが７１！及び偏心が数−程度で、ワイヤ軸に対し
て対象なまるいボールが形成されることが判明した。ま
た、Ｃｕワイヤは加工のままでもＡｔワイヤより優れて
いるが、焼なましし九ものはくびれ及び偏心がほとんど
生じなかつえ。
実施例４ 前述の焼なまししたＡｔワイヤについてガス雰囲気を変
えて前述した方法と同様にボールの形成を検討した。ガ
ス雰囲気として、Ａｒ中に５０体積−までのＨＳガスを
混合させてその混合割合とボールの形成状況との関係を
調べた結果、Ｈ重量が５〜１５体積−のときボールの形
成状況が最も良好であった。この場合の通電は、前述の
パルス電流のほか、ワイヤを正又は負のものも同様に行
つ九。その結果、パルス電流によるものが、ボール径の
大きさのコントロールが容易で、かつ清浄なボールが得
られた。
実施例５ Ａｇ３０μｍ、Ｎｉ５０μｍ、Ｐ４５０μｍ。
Ｔｉ５０μｍ、ｐｔｓｏ＃ｍのワイヤを用い、ムｇ３０
（ＩＣ，Ｎｉ７０（１１Ｐｄ、Ｐｔ、Ｔｉ９００Ｃ，１
時間、いずれもムｒガス中で焼なましを行い、ムｒガス
雰囲気中で第３図に示す方法で同様にワイヤを負として
放電によってボールを形成させた。金属の種類によって
放電電流及び時間を変えて行つ九結果、いずれのワイヤ
も弾性変形がないので、第３図（ｂ）に示すようなワイ
ヤの屈曲し九押し出しが起らず、龜わめて嵐好なボール
が形成されることが確認された。
以上、本発明によれば、ワイヤの接合部で、局部的な変
形の生じないワイヤ□：冒ンデングが得られ、断線のな
い電気的装置、特に信頼性の高い半導体装置が得られる
優れた効果が得られる。
【図面の簡単な説明】
第１図及び第２図は従来のワイヤを使用して各各ウェッ
ジボンデング及びボールボンデングした半導体装置の断
面図、第３図は従来のワイヤを使用して放電によってボ
ールを形成する状況を示した断面図、第４図は本発明の
ワイヤを使用してウエッジボノデーグしたセラミックパ
ッケージ型半導体装置の断面図、第５図は本発明のワイ
ヤを使用してボールボンデングしたレジンモールド型半
導体装置の断面図、第６図は従来のワイヤ及び本発明の
ワイヤの偏心及びくびれ発生率との関係を示す棒グラフ
である。 １・・・ワイヤ、２・・・キャピラリー、３・・・半導
体素子、４・・・リードフレーム、５・・・Ｗ電極、７
．１１・・・セラきツクペース、８・・・Ａｔ蒸着膜、
９・・・低融点ガ１．代理人　弁理士　高ｍ吃禿欝 第４　図 第５図

Claims (1)

  1. 【特許請求の範囲】 １、回路素子間を細径ワイヤによって固相接合して電気
    的に接続してなるものにおいて、前記ワイヤは焼なまし
    状態で室温の伸び率が６０−以下でめる金属からなり、
    且つ焼なましされていることを特徴とする電気的装置。 ２、前記回路素子の一方が半導体素子であり、該半導体
    素子に前記ワイヤの一端に形成されたボールがボールボ
    ンデングされておシ、前記回路素子の他方が外部端子で
    Ｔｏシ、該端子に前記ワイヤの他端がウェッジボンデン
    グされている特許請求の範囲第１項に記載の電気的装置
    。 ３、前記ワイヤ社実質的に弾性変形しないｍ度に完全焼
    なましされている特許請求の範囲第１項又は第２項に記
    載の電気的装置。 ４、前記ワイヤの直径は２０〜１００μｍである特許請
    求の範囲第１項又は第２積に記載の電気的装置。 ５、前記ワイヤは室温の比抵抗が１５μΩ副以下である
    特許請求の範囲第１項ないし第４項のいずれかに記載の
    電気的装置。 ６、前記ワイヤは、Ａｔ、Ｃｕ、λｇ　ｍ　Ｎ　’　＋
    Ｐｄｌ　ｐｔ、Ｍｏｌ　’ｒｉ、　ｚｒ、Ｎｂ、Ｔｈか
    ら選ばれ九１１１からなる特許請求の範囲第１１Ａない
    し第５項のいずれかに記載の電気的装置。 ７、前記ｌ−ルは、少量の還元性雰囲気を含む非酸化性
    雰囲気中でアーク放電によって溶融し形成され九もので
    ある特許請求の範囲第２項ないし第６項のいずれかに記
    載の電気的装置。 ８、前記半導体素子と外部端子との前記ボンデング面に
    は段差を有し、前記ポールボンデング及びウェッジボン
    デングは超音波接合又は熱圧着によって行われている特
    許請求の範囲第２項ないし第７項のいずれかに記載の電
    気的装置。 ９、前記ボールは前記半導体素子上に形成されたＡｊ薄
    朧にポールボンデングされており、前記ワイヤの他端は
    Ｃｕ又はｌ’ｅ−Ｎｉ系合金からなる外部端子の表面に
    形成されたＡｇ、Ｎｉ又はＡｔ薄膜にウェッジボンデン
    グされ、前記半導体素子、前記ワイヤ及び前記外部端子
    の一部がレジンモールドされている特許請求の範囲第２
    項ないし纂８項のいずれかに記載の電気的装置。 １０、前記回路素子の一方が半導体素子であり、他方が
    外部端子であり、前記半導体素子と外部端子とが前記ワ
    イヤによって接続されており、前記半導体素子、ワイヤ
    及び外部端子の一部がセラミックによって被われていゐ
    特許請求の範囲第１項、第３項、第５項、第６項のいず
    れかに記載の電気的装置。 １１、回路素子間をａｍワイヤによって固相接合して電
    気的に接続する方法において、焼なまし状態で室温の伸
    び率が６０１ｓ以下である金属からなり、且つ焼なまさ
    れてｉる前撃？イヤを、咳ワイヤの融点以下の温度で前
    記回路素子に押圧して直接４合することを特徴とする電
    気的装置の製法。 １２、前記ワイヤをキャビ２リーよυ押し出し、他に設
    けられた電極との間に放電させて前記ワイヤの先端にボ
    ールを形成し、該ボールを前記キャピラリーを通して与
    えられる超音波振動によって前記回路素子に直接４合し
    た後、前記ワイヤの他端を前記キャピラリーを通して与
    えられる超音波振動によって他の前記回路素子に直接４
    合し、次いで前記ワイヤを前記軸の回路素子の接合部分
    で切断する特許請求の範囲第１１項に記載の電気的装置
    の製法。 １３、前記放電を少量の水素を含む非酸化性雰囲気中で
    行う特許請求の範囲第１１項又は第１２項に記載の電気
    的装置の製法。 １４、前記非酸化性雰囲気は水素５〜１５体積−を含む
    不活性ガスからなる特許請求の範囲第１３項文仕叢＝＝
    噴に記載の電気的装置の製法。 １５、前記放電は、前記ワイヤを負又は正及び負のパル
    ス電流とする特許請求の範囲第　　項ないし゛。 第　　項のいずれかに記載の電気的装置の製法。 １６、焼なまし状態で室温の伸び率が６０％以下である
    金属からなるワイヤであって、且つ焼なましされている
    ことを特徴とするボンデング用ワイヤ。 １７、前記ワイヤは実質的に弾性変形しない程度に完全
    部なましされている特許請求の範囲第１６項に記載のボ
    ンデング用ワイヤ。 １８、前記ワイヤの室温の比抵抗が１５μΩ国以下であ
    る特許請求の範囲第７２項又は第７７項に記載のボンデ
    ング用ワイヤ。 １９、前記ワイヤは、ムＬ　＠　Ｃ’　＃ム１１！、Ｎ
    ｌ。 Ｐｄ、Ｐｉ、ＭＯ，Ｔｉ、Ｚｒ、Ｎｂ、Ｔｈから選ばれ
    九１種からなる特許請求の範囲第１Δ項ないし第７８項
    のいずれかに記載のボンデング用ワイヤ。 加、前記ワイヤはその先端に自らの溶融によって形成さ
    れたボールを他の部材に固相接合する接合部分とする特
    許請求の範囲第７６項ないし第７を項のいずれかに記載
    のボンデング用ワイヤ。 ２１、前記ワイヤの直径は２０〜１００μｍである特許
    請求の範囲第７６項ないし第２０１項のいずれかに記載
    のボンデング用ワイヤ。 ２２３焼なまし状態で室温の伸び率が６０−以下である
    金属からなる細径ワイヤを、前記金属の貴結晶温度以上
    の温度に加熱し、焼なましすることを特徴とするボンデ
    ング用ワイヤの製法。 路、前記焼なましを前記ワイヤが弾性変形しない程度に
    完全に行う特許請求の範囲第２２項に記載のボンデング
    用ワイヤの製法。 Ｕ、前記焼なましを非酸化性雰囲気中にて前記ワイヤ同
    士が接触しないように行う特許請求の範囲第２２項又は
    第２３項に記載のボンデング用ワイヤの製法。
JP57036468A 1982-03-10 1982-03-10 半導体装置及びその製法 Granted JPS58154241A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP57036468A JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法
EP83300956A EP0088557B1 (en) 1982-03-10 1983-02-23 Resin encapsulated semiconductor device
DE3382826T DE3382826T2 (de) 1982-03-10 1983-02-23 Verfahren zum Herstellen einer harzumhüllte Halbleiteranordnung
DE8383300956T DE3381665D1 (de) 1982-03-10 1983-02-23 Halbleiteranordnung in harz-verkapselung.
EP89202085A EP0348018B1 (en) 1982-03-10 1983-02-23 Method of manufacture of a resin encapsulated semiconductor device
DE3382828T DE3382828T2 (de) 1982-03-10 1983-02-23 Metalldraht für integrierte Schaltungen
EP89202084A EP0349095B1 (en) 1982-03-10 1983-02-23 Metal wire for use in integrated circuits
KR1019830000939A KR910000154B1 (ko) 1982-03-10 1983-03-08 반도체장치와 그 재법 및 그것에 사용되는 본딩와이어
US07/818,457 US5153704A (en) 1982-03-10 1992-01-03 Semiconductor device using annealed bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57036468A JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4006148A Division JPH0719790B2 (ja) 1992-01-17 1992-01-17 ボンデング用ワイヤとその製法

Publications (2)

Publication Number Publication Date
JPS58154241A true JPS58154241A (ja) 1983-09-13
JPH0514425B2 JPH0514425B2 (ja) 1993-02-25

Family

ID=12470640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036468A Granted JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法

Country Status (5)

Country Link
US (1) US5153704A (ja)
EP (2) EP0349095B1 (ja)
JP (1) JPS58154241A (ja)
KR (1) KR910000154B1 (ja)
DE (3) DE3382828T2 (ja)

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JP2522524B2 (ja) * 1988-08-06 1996-08-07 株式会社東芝 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP0349095A3 (en) 1990-05-02
KR840004305A (ko) 1984-10-10
DE3382826D1 (de) 1999-06-24
DE3382828T2 (de) 2000-01-20
EP0088557A2 (en) 1983-09-14
US5153704A (en) 1992-10-06
EP0349095A2 (en) 1990-01-03
DE3381665D1 (de) 1990-07-19
EP0088557B1 (en) 1990-06-13
DE3382828D1 (de) 1999-06-24
EP0088557A3 (en) 1985-09-25
KR910000154B1 (ko) 1991-01-21
JPH0514425B2 (ja) 1993-02-25
DE3382826T2 (de) 2000-01-20
EP0349095B1 (en) 1999-05-19

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