KR840004305A - 전기적장치와 그 제법 및 그것에 사용하는 본딩용 와이어 및 그 제법 - Google Patents
전기적장치와 그 제법 및 그것에 사용하는 본딩용 와이어 및 그 제법 Download PDFInfo
- Publication number
- KR840004305A KR840004305A KR1019830000939A KR830000939A KR840004305A KR 840004305 A KR840004305 A KR 840004305A KR 1019830000939 A KR1019830000939 A KR 1019830000939A KR 830000939 A KR830000939 A KR 830000939A KR 840004305 A KR840004305 A KR 840004305A
- Authority
- KR
- South Korea
- Prior art keywords
- wire
- bonding
- manufacturing
- annealed
- circuit element
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims 8
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims 5
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 230000001590 oxidative effect Effects 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- 229910052802 copper Inorganic materials 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 229910052709 silver Inorganic materials 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052776 Thorium Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000010891 electric arc Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 claims 1
- 239000007790 solid phase Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본원 발명의 와이어를 사용하여 웨지 본딩한 세라믹패키지형 반도체 장치의 단면도.
제5도는 본원 발명의 와이어를 사용하여 보올 본딩한 레진모울드형 반도체장치의 단면도.
Claims (24)
- 회로소자간을 세경(細徑) 와이어에 의해서 고상 접합하여 전기적으로 접합하여 이루어진 것에 있어서, 상기 와이어는 어니일링상태에서 실온의 신장율이 60%이하인 금속으로 이루어지며, 또한 어니일링되어 있는 것을 특징으로 하는 전기적장치.
- 상기 회로소자의 한쪽이 반도체소자이며, 이 반도체소자에 상기 와이어의 일단에 형성된 보올이 보올본딩되어 있고, 상기 회로소자의 다른쪽이 외부단자이며, 이 단자에 상기 와이어의 타단이 웨지본딩되어 있는 특허청구의 범위 1 기재의 전기적장치.
- 상기 와이어는 실질적으로 탄성 변화하지 않을 정도로 완전 어니일링되어 있는 특허청구의 범위 1 또는 2기재의 전기적 장치.
- 상기 와이어의 직경은 20∼100㎛인 특허청구의 범위 1 또는 2기재의 전기적장치.
- 상기 와이어는 실온의 비정항이 15μΩ㎝ 이하인 특허청구의 범위 1 내지 4의 어딘가에 기재한 전기적장치.
- 상기 와이어는 Al,Cu,Ag,Ni,Pd,Pt,Mo,Ti,Zr,Nb,Th에서 선정된 1종으로 이루어진 특허청구의 범위 1 내지 5의 어딘가에 기재한 전기적장치.
- 상기 보올은 소량의 환원성 분위기를 포함하는 비산화성 분위기 중에서 아아크방전에 의해서 용융하여 형성된 것인 특허청구의 범위 2 내지 6의 어딘가에 기재한 전기적장치.
- 상기 반도체소자와 외부단자와의 상기 본딩면에는 단차를 가지며, 상기 보올본딩 및 웨지본딩은 초음파접합 또는 열압착에 의해 행해지고 있는 특허청구의 범위 2 내지 7의 어딘가에 기재한 전기적장치.
- 상기 보올은 상기 반도체소자상에서 형성된 Al박막에 보올본딩되어 있으며, 상기 와이어의 타단은 Cu 또는 Fe-Ni계 합금으로 이루어진 외부단자의 표면에 형성된 Ag, Ni 또는 Al박막에 웨지본딩되며, 상기 반도체소자와 상기 와이어 및 상기 외부단자의 일부가 레진모울드되어 있는 특허청구의 범위 2 내지 8의 어딘가에 기재한 전기적 장치.
- 상기 회로소자의 한쪽의 반도체소자이며, 다른쪽이 외부단자이고, 상기 반도체소자와 외부단자가 상기 와이어에 의해서 접속되어 있고, 상기 반도체소자와 와이어 및 외부단자의 일부가 세라믹에 의해 덮여 있는 특허청구의 범위 1,3,5,6의 어딘가에 기재한 전기적장치.
- 회로소자간을 세경와이어에 의해서 고상접합하여 전기적으로 접속하는 방법에 있어서, 어니일링 상태에서 실온의 신장율이 60% 이하인 금속으로 이루어지며, 또한 어니일링되어 있는 상기 와이어를 이 와이어의 융점 이하의 온도로 상기 회로소자에 압압하여 직접 접합하는 것을 특징으로 하는 전기적 장치의 제법.
- 상기 와이어를 계면에서 압출하고, 따로 설치된 전극과의 사이에 방전시켜서 상기 와이어 선단에 보올을 형성하며, 이 보올을 상기 계면을 통해서 주어지는 초음파진동에 의해서 상기 회로소자에 직접 접합한 다음, 상기 와이어 타단을 상기 계면을 통해서 주어지는 초음파진동에 의해서 별도의 상기 회로소자에 직접 접합하며, 이어서 상기 와이어를 상기 별도의 회로소자의 접합부분에서 절단하는 특허청구의 범위 11기재의 전기적 장치의 제법.
- 상기 방전을 소량의 수소를 포함하는 비산화성 분위기중에서 행해는 특허청구의 범위 11 또는 12 기재의 전기적 장치의 제법.
- 상기 비산화성 분위기는 수소 5∼15체적%를 포함하는 불활성 가스로 이루어진 특허청구의 범위 13기재의 전기적 장치의 제법.
- 상기 방전은 상기 와이어를 부 또는 정 및 부의 펄스전류로 하는 특허청구의 범위 12 내지 14의 어딘가에 기재한 전기적장치의 제법.
- 어니일링상태에서 실온의 신장율이 60% 이하인 금속으로 이루어진 와이어이며, 또한 어니일링되어 있는 것을 특징으로 하는 본딩용 와이어.
- 상기 와이어는 실질적으로 탄성 변형하지 않을 정도로 완전 어니일링되어 있는 특허청구의 범위 16기재의 본딩용 와이어.
- 상기 와이어의 실온의 비저항이 15μΩ㎝이하인 특허청구의 범위 16 또는 17기재의 본딩용 와이어.
- 상기 와이어는 Al,Cu,Ag,Ni,Pd,Pt,Mo,Ti,Zr,Nb,Th에서 선정된 1종으로 이루어진 특허청구의 범위 16 내지 18의 어딘가에 기재한 본딩용 와이어.
- 상기 와이어는 그 선단에 스스로의 용융에 의해서 형성된 보올을 다른 부재에 고상접합하는 접합부분으로 하는 특허청구의 범위 16내지 19의 어딘가에 기재한 본딩용 와이어.
- 상기 와이어의 직경은 20∼100㎛인 특허청구의 범위 16 내지 20의 어딘가에 기재한 본딩용 와이어.
- 어니일링상태에서 실온의 신장율이 60% 이하인 금속으로 이루진 세경와이어를, 상기 금속의 재결정온도 이상의 온도로 가열하고, 어니일링하는 것을 특징으로 하는 본딩용 와이어의 제법.
- 상기 어니일링을 상기 와이어가 탄성 변형하지 않을 정도로 완전히 행하는 특허청구의 범위 22기재의 본딩용 와이어의 제법.
- 상기 어니일링을 비산화성 분위기중에서 상기 와이어끼리가 접촉하지 않도록 행하는 특허청구의 범위 22 또는 23기재의 본딩용 와이어의 제법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57-036468 | 1982-03-10 | ||
JP57036468A JPS58154241A (ja) | 1982-03-10 | 1982-03-10 | 半導体装置及びその製法 |
JP57-36468 | 1982-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR840004305A true KR840004305A (ko) | 1984-10-10 |
KR910000154B1 KR910000154B1 (ko) | 1991-01-21 |
Family
ID=12470640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019830000939A KR910000154B1 (ko) | 1982-03-10 | 1983-03-08 | 반도체장치와 그 재법 및 그것에 사용되는 본딩와이어 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5153704A (ko) |
EP (2) | EP0349095B1 (ko) |
JP (1) | JPS58154241A (ko) |
KR (1) | KR910000154B1 (ko) |
DE (3) | DE3382828T2 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS58169918A (ja) * | 1982-03-31 | 1983-10-06 | Hitachi Ltd | ワイヤボンダ |
US4476365A (en) * | 1982-10-08 | 1984-10-09 | Fairchild Camera & Instrument Corp. | Cover gas control of bonding ball formation |
US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
FR2555813B1 (fr) * | 1983-09-28 | 1986-06-20 | Hitachi Ltd | Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif |
FR2561445B1 (fr) * | 1984-02-24 | 1988-03-18 | Hitachi Ltd | Fils de connexion d'une pastille semi-conductrice, notamment encapsulee sous resine |
IT1183375B (it) * | 1984-02-24 | 1987-10-22 | Hitachi Ltd | Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori |
US4976393A (en) * | 1986-12-26 | 1990-12-11 | Hitachi, Ltd. | Semiconductor device and production process thereof, as well as wire bonding device used therefor |
JP2522524B2 (ja) * | 1988-08-06 | 1996-08-07 | 株式会社東芝 | 半導体装置の製造方法 |
WO2001041963A2 (en) * | 1999-12-01 | 2001-06-14 | L'Air Liquide Societe Anonyme à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude | Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods |
US7314781B2 (en) * | 2003-11-05 | 2008-01-01 | Lsi Corporation | Device packages having stable wirebonds |
US8084300B1 (en) | 2010-11-24 | 2011-12-27 | Unisem (Mauritius) Holdings Limited | RF shielding for a singulated laminate semiconductor device package |
CN202203727U (zh) * | 2011-08-16 | 2012-04-25 | 惠州元晖光电有限公司 | 具有光切换阵列的光引擎 |
CN110568001B (zh) * | 2019-08-14 | 2021-09-03 | 武汉科技大学 | 一种确定冷弯厚壁型钢弯角去应力退火温度的方法 |
Family Cites Families (19)
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US3357090A (en) * | 1963-05-23 | 1967-12-12 | Transitron Electronic Corp | Vibratory welding tip and method of welding |
GB1106163A (en) * | 1964-03-02 | 1968-03-13 | Post Office | Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces |
US3430835A (en) * | 1966-06-07 | 1969-03-04 | Westinghouse Electric Corp | Wire bonding apparatus for microelectronic components |
US3492547A (en) * | 1967-09-18 | 1970-01-27 | Northrop Corp | Radiation hardened semiconductor device |
US3623649A (en) * | 1969-06-09 | 1971-11-30 | Gen Motors Corp | Wedge bonding tool for the attachment of semiconductor leads |
US3827917A (en) * | 1969-06-18 | 1974-08-06 | Kaiser Aluminium Chem Corp | Aluminum electrical conductor and process for making the same |
FR2063196A5 (en) * | 1969-09-02 | 1971-07-09 | Radiotechnique Compelec | Fusion cutting thin filaments for semiconductor welding |
NL7018378A (ko) * | 1970-12-17 | 1972-06-20 | ||
US3838240A (en) * | 1973-04-04 | 1974-09-24 | Rca Corp | Bonding tool and method of bonding therewith |
US4082573A (en) * | 1974-01-02 | 1978-04-04 | Southwire Company | High tensile strength aluminum alloy conductor and method of manufacture |
US3975757A (en) * | 1974-05-31 | 1976-08-17 | National Semiconductor Corporation | Molded electrical device |
JPS5282183A (en) * | 1975-12-29 | 1977-07-09 | Nec Corp | Connecting wires for semiconductor devices |
US4121951A (en) * | 1976-03-05 | 1978-10-24 | Alcan Research And Development Limited | Aluminum alloy electrical conductor and method therefor |
US4148671A (en) * | 1977-02-15 | 1979-04-10 | United Technologies Corporation | High ductility, high strength aluminum conductor |
US4141029A (en) * | 1977-12-30 | 1979-02-20 | Texas Instruments Incorporated | Integrated circuit device |
US4213556A (en) * | 1978-10-02 | 1980-07-22 | General Motors Corporation | Method and apparatus to detect automatic wire bonder failure |
JPS5623759A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Resin-sealed semiconductor device and manufacture thereof |
JPS5712531A (en) * | 1980-06-26 | 1982-01-22 | Fujitsu Ltd | Wire bonding method |
US4459452A (en) * | 1980-06-30 | 1984-07-10 | The Welding Institute | Ball bonding of wire |
-
1982
- 1982-03-10 JP JP57036468A patent/JPS58154241A/ja active Granted
-
1983
- 1983-02-23 DE DE3382828T patent/DE3382828T2/de not_active Expired - Fee Related
- 1983-02-23 EP EP89202084A patent/EP0349095B1/en not_active Expired - Lifetime
- 1983-02-23 DE DE3382826T patent/DE3382826T2/de not_active Expired - Lifetime
- 1983-02-23 EP EP83300956A patent/EP0088557B1/en not_active Expired - Lifetime
- 1983-02-23 DE DE8383300956T patent/DE3381665D1/de not_active Expired - Lifetime
- 1983-03-08 KR KR1019830000939A patent/KR910000154B1/ko not_active IP Right Cessation
-
1992
- 1992-01-03 US US07/818,457 patent/US5153704A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3381665D1 (de) | 1990-07-19 |
DE3382828D1 (de) | 1999-06-24 |
KR910000154B1 (ko) | 1991-01-21 |
EP0088557A2 (en) | 1983-09-14 |
EP0349095A3 (en) | 1990-05-02 |
DE3382826T2 (de) | 2000-01-20 |
DE3382828T2 (de) | 2000-01-20 |
US5153704A (en) | 1992-10-06 |
EP0349095B1 (en) | 1999-05-19 |
EP0088557B1 (en) | 1990-06-13 |
EP0349095A2 (en) | 1990-01-03 |
DE3382826D1 (de) | 1999-06-24 |
JPS58154241A (ja) | 1983-09-13 |
EP0088557A3 (en) | 1985-09-25 |
JPH0514425B2 (ko) | 1993-02-25 |
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