KR840004305A - 전기적장치와 그 제법 및 그것에 사용하는 본딩용 와이어 및 그 제법 - Google Patents

전기적장치와 그 제법 및 그것에 사용하는 본딩용 와이어 및 그 제법 Download PDF

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Publication number
KR840004305A
KR840004305A KR1019830000939A KR830000939A KR840004305A KR 840004305 A KR840004305 A KR 840004305A KR 1019830000939 A KR1019830000939 A KR 1019830000939A KR 830000939 A KR830000939 A KR 830000939A KR 840004305 A KR840004305 A KR 840004305A
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South Korea
Prior art keywords
wire
bonding
manufacturing
annealed
circuit element
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KR1019830000939A
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English (en)
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KR910000154B1 (ko
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진(외 4) 오오누끼
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미다 가쓰시게
가부시기 가이샤 히다찌세이사꾸쇼
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Publication of KR840004305A publication Critical patent/KR840004305A/ko
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
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Abstract

내용 없음

Description

전기적장치와 그 제법 및 그것에 사용하는 본딩용 와이어 및 그 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본원 발명의 와이어를 사용하여 웨지 본딩한 세라믹패키지형 반도체 장치의 단면도.
제5도는 본원 발명의 와이어를 사용하여 보올 본딩한 레진모울드형 반도체장치의 단면도.

Claims (24)

  1. 회로소자간을 세경(細徑) 와이어에 의해서 고상 접합하여 전기적으로 접합하여 이루어진 것에 있어서, 상기 와이어는 어니일링상태에서 실온의 신장율이 60%이하인 금속으로 이루어지며, 또한 어니일링되어 있는 것을 특징으로 하는 전기적장치.
  2. 상기 회로소자의 한쪽이 반도체소자이며, 이 반도체소자에 상기 와이어의 일단에 형성된 보올이 보올본딩되어 있고, 상기 회로소자의 다른쪽이 외부단자이며, 이 단자에 상기 와이어의 타단이 웨지본딩되어 있는 특허청구의 범위 1 기재의 전기적장치.
  3. 상기 와이어는 실질적으로 탄성 변화하지 않을 정도로 완전 어니일링되어 있는 특허청구의 범위 1 또는 2기재의 전기적 장치.
  4. 상기 와이어의 직경은 20∼100㎛인 특허청구의 범위 1 또는 2기재의 전기적장치.
  5. 상기 와이어는 실온의 비정항이 15μΩ㎝ 이하인 특허청구의 범위 1 내지 4의 어딘가에 기재한 전기적장치.
  6. 상기 와이어는 Al,Cu,Ag,Ni,Pd,Pt,Mo,Ti,Zr,Nb,Th에서 선정된 1종으로 이루어진 특허청구의 범위 1 내지 5의 어딘가에 기재한 전기적장치.
  7. 상기 보올은 소량의 환원성 분위기를 포함하는 비산화성 분위기 중에서 아아크방전에 의해서 용융하여 형성된 것인 특허청구의 범위 2 내지 6의 어딘가에 기재한 전기적장치.
  8. 상기 반도체소자와 외부단자와의 상기 본딩면에는 단차를 가지며, 상기 보올본딩 및 웨지본딩은 초음파접합 또는 열압착에 의해 행해지고 있는 특허청구의 범위 2 내지 7의 어딘가에 기재한 전기적장치.
  9. 상기 보올은 상기 반도체소자상에서 형성된 Al박막에 보올본딩되어 있으며, 상기 와이어의 타단은 Cu 또는 Fe-Ni계 합금으로 이루어진 외부단자의 표면에 형성된 Ag, Ni 또는 Al박막에 웨지본딩되며, 상기 반도체소자와 상기 와이어 및 상기 외부단자의 일부가 레진모울드되어 있는 특허청구의 범위 2 내지 8의 어딘가에 기재한 전기적 장치.
  10. 상기 회로소자의 한쪽의 반도체소자이며, 다른쪽이 외부단자이고, 상기 반도체소자와 외부단자가 상기 와이어에 의해서 접속되어 있고, 상기 반도체소자와 와이어 및 외부단자의 일부가 세라믹에 의해 덮여 있는 특허청구의 범위 1,3,5,6의 어딘가에 기재한 전기적장치.
  11. 회로소자간을 세경와이어에 의해서 고상접합하여 전기적으로 접속하는 방법에 있어서, 어니일링 상태에서 실온의 신장율이 60% 이하인 금속으로 이루어지며, 또한 어니일링되어 있는 상기 와이어를 이 와이어의 융점 이하의 온도로 상기 회로소자에 압압하여 직접 접합하는 것을 특징으로 하는 전기적 장치의 제법.
  12. 상기 와이어를 계면에서 압출하고, 따로 설치된 전극과의 사이에 방전시켜서 상기 와이어 선단에 보올을 형성하며, 이 보올을 상기 계면을 통해서 주어지는 초음파진동에 의해서 상기 회로소자에 직접 접합한 다음, 상기 와이어 타단을 상기 계면을 통해서 주어지는 초음파진동에 의해서 별도의 상기 회로소자에 직접 접합하며, 이어서 상기 와이어를 상기 별도의 회로소자의 접합부분에서 절단하는 특허청구의 범위 11기재의 전기적 장치의 제법.
  13. 상기 방전을 소량의 수소를 포함하는 비산화성 분위기중에서 행해는 특허청구의 범위 11 또는 12 기재의 전기적 장치의 제법.
  14. 상기 비산화성 분위기는 수소 5∼15체적%를 포함하는 불활성 가스로 이루어진 특허청구의 범위 13기재의 전기적 장치의 제법.
  15. 상기 방전은 상기 와이어를 부 또는 정 및 부의 펄스전류로 하는 특허청구의 범위 12 내지 14의 어딘가에 기재한 전기적장치의 제법.
  16. 어니일링상태에서 실온의 신장율이 60% 이하인 금속으로 이루어진 와이어이며, 또한 어니일링되어 있는 것을 특징으로 하는 본딩용 와이어.
  17. 상기 와이어는 실질적으로 탄성 변형하지 않을 정도로 완전 어니일링되어 있는 특허청구의 범위 16기재의 본딩용 와이어.
  18. 상기 와이어의 실온의 비저항이 15μΩ㎝이하인 특허청구의 범위 16 또는 17기재의 본딩용 와이어.
  19. 상기 와이어는 Al,Cu,Ag,Ni,Pd,Pt,Mo,Ti,Zr,Nb,Th에서 선정된 1종으로 이루어진 특허청구의 범위 16 내지 18의 어딘가에 기재한 본딩용 와이어.
  20. 상기 와이어는 그 선단에 스스로의 용융에 의해서 형성된 보올을 다른 부재에 고상접합하는 접합부분으로 하는 특허청구의 범위 16내지 19의 어딘가에 기재한 본딩용 와이어.
  21. 상기 와이어의 직경은 20∼100㎛인 특허청구의 범위 16 내지 20의 어딘가에 기재한 본딩용 와이어.
  22. 어니일링상태에서 실온의 신장율이 60% 이하인 금속으로 이루진 세경와이어를, 상기 금속의 재결정온도 이상의 온도로 가열하고, 어니일링하는 것을 특징으로 하는 본딩용 와이어의 제법.
  23. 상기 어니일링을 상기 와이어가 탄성 변형하지 않을 정도로 완전히 행하는 특허청구의 범위 22기재의 본딩용 와이어의 제법.
  24. 상기 어니일링을 비산화성 분위기중에서 상기 와이어끼리가 접촉하지 않도록 행하는 특허청구의 범위 22 또는 23기재의 본딩용 와이어의 제법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830000939A 1982-03-10 1983-03-08 반도체장치와 그 재법 및 그것에 사용되는 본딩와이어 KR910000154B1 (ko)

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JP57-036468 1982-03-10
JP57036468A JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法
JP57-36468 1982-03-10

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KR910000154B1 KR910000154B1 (ko) 1991-01-21

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169918A (ja) * 1982-03-31 1983-10-06 Hitachi Ltd ワイヤボンダ
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
FR2555813B1 (fr) * 1983-09-28 1986-06-20 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
FR2561445B1 (fr) * 1984-02-24 1988-03-18 Hitachi Ltd Fils de connexion d'une pastille semi-conductrice, notamment encapsulee sous resine
IT1183375B (it) * 1984-02-24 1987-10-22 Hitachi Ltd Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP2522524B2 (ja) * 1988-08-06 1996-08-07 株式会社東芝 半導体装置の製造方法
WO2001041963A2 (en) * 1999-12-01 2001-06-14 L'Air Liquide Societe Anonyme à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude Systems and methods for application of atmospheric plasma surface treatment to various electronic component packaging and assembly methods
US7314781B2 (en) * 2003-11-05 2008-01-01 Lsi Corporation Device packages having stable wirebonds
US8084300B1 (en) 2010-11-24 2011-12-27 Unisem (Mauritius) Holdings Limited RF shielding for a singulated laminate semiconductor device package
CN202203727U (zh) * 2011-08-16 2012-04-25 惠州元晖光电有限公司 具有光切换阵列的光引擎
CN110568001B (zh) * 2019-08-14 2021-09-03 武汉科技大学 一种确定冷弯厚壁型钢弯角去应力退火温度的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3357090A (en) * 1963-05-23 1967-12-12 Transitron Electronic Corp Vibratory welding tip and method of welding
GB1106163A (en) * 1964-03-02 1968-03-13 Post Office Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces
US3430835A (en) * 1966-06-07 1969-03-04 Westinghouse Electric Corp Wire bonding apparatus for microelectronic components
US3492547A (en) * 1967-09-18 1970-01-27 Northrop Corp Radiation hardened semiconductor device
US3623649A (en) * 1969-06-09 1971-11-30 Gen Motors Corp Wedge bonding tool for the attachment of semiconductor leads
US3827917A (en) * 1969-06-18 1974-08-06 Kaiser Aluminium Chem Corp Aluminum electrical conductor and process for making the same
FR2063196A5 (en) * 1969-09-02 1971-07-09 Radiotechnique Compelec Fusion cutting thin filaments for semiconductor welding
NL7018378A (ko) * 1970-12-17 1972-06-20
US3838240A (en) * 1973-04-04 1974-09-24 Rca Corp Bonding tool and method of bonding therewith
US4082573A (en) * 1974-01-02 1978-04-04 Southwire Company High tensile strength aluminum alloy conductor and method of manufacture
US3975757A (en) * 1974-05-31 1976-08-17 National Semiconductor Corporation Molded electrical device
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
US4121951A (en) * 1976-03-05 1978-10-24 Alcan Research And Development Limited Aluminum alloy electrical conductor and method therefor
US4148671A (en) * 1977-02-15 1979-04-10 United Technologies Corporation High ductility, high strength aluminum conductor
US4141029A (en) * 1977-12-30 1979-02-20 Texas Instruments Incorporated Integrated circuit device
US4213556A (en) * 1978-10-02 1980-07-22 General Motors Corporation Method and apparatus to detect automatic wire bonder failure
JPS5623759A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Resin-sealed semiconductor device and manufacture thereof
JPS5712531A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Wire bonding method
US4459452A (en) * 1980-06-30 1984-07-10 The Welding Institute Ball bonding of wire

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DE3381665D1 (de) 1990-07-19
DE3382828D1 (de) 1999-06-24
KR910000154B1 (ko) 1991-01-21
EP0088557A2 (en) 1983-09-14
EP0349095A3 (en) 1990-05-02
DE3382826T2 (de) 2000-01-20
DE3382828T2 (de) 2000-01-20
US5153704A (en) 1992-10-06
EP0349095B1 (en) 1999-05-19
EP0088557B1 (en) 1990-06-13
EP0349095A2 (en) 1990-01-03
DE3382826D1 (de) 1999-06-24
JPS58154241A (ja) 1983-09-13
EP0088557A3 (en) 1985-09-25
JPH0514425B2 (ko) 1993-02-25

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