JPH0514425B2 - - Google Patents

Info

Publication number
JPH0514425B2
JPH0514425B2 JP57036468A JP3646882A JPH0514425B2 JP H0514425 B2 JPH0514425 B2 JP H0514425B2 JP 57036468 A JP57036468 A JP 57036468A JP 3646882 A JP3646882 A JP 3646882A JP H0514425 B2 JPH0514425 B2 JP H0514425B2
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
ball
lead frame
metal wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57036468A
Other languages
English (en)
Other versions
JPS58154241A (ja
Inventor
Hitoshi Oonuki
Masateru Suwa
Masahiro Koizumi
Tomio Iizuka
Tateo Tamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57036468A priority Critical patent/JPS58154241A/ja
Priority to EP83300956A priority patent/EP0088557B1/en
Priority to DE8383300956T priority patent/DE3381665D1/de
Priority to EP89202084A priority patent/EP0349095B1/en
Priority to DE3382826T priority patent/DE3382826T2/de
Priority to DE3382828T priority patent/DE3382828T2/de
Priority to EP89202085A priority patent/EP0348018B1/en
Priority to KR1019830000939A priority patent/KR910000154B1/ko
Publication of JPS58154241A publication Critical patent/JPS58154241A/ja
Priority to US07/818,457 priority patent/US5153704A/en
Publication of JPH0514425B2 publication Critical patent/JPH0514425B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description

【発明の詳細な説明】 本発明は新規な半導体装置とその製法に係る。
特に、半導体素子とリードフレームとがボンデン
グ用金属ワイヤを介して結合されている半導体装
置とその製法に関する。
現在、半導体装置（IC、LSI、トランジスタ）
においては、半導体素子とパツケージの外部リー
ドフレームとの接続に、直径20〜50μｍのAuワイ
ヤが多く使用されている。
半導体素子へのワイヤの接続は、Auワイヤの
先端を放電又は水素火炎により溶融してボールを
形成し、そのボールを半導体素子に直接又はめつ
き膜を介して熱圧着又は超音波接合することで行
つている。一方、リードフレームへのワイヤの接
続は、キヤピラリーによつてウエツジボンデング
することで行つている。
ところで最近、Auワイヤの代りにAlワイヤを
使用することが検討されている。Alワイヤのボ
ンデングにおいても前述のように熱圧着又は超音
波接合が検討されている。発明者らは、Alワイ
ヤを使用した場合には、熱圧着又は超音波接合の
いずれにおいても、第１図に示すように接合部で
局部的な変形が生じること、及びこのような局部
的な変形がワイヤを局部的に細くさせるだけでな
く、断線等の原因になることを見い出した。
この原因は、接合部近傍のワイヤ部分が加熱さ
れて軟かくなるためであることがわかつた。
更に従来のAlワイヤは細径の線材に加工され
たままでケースに巻かれているので、弾性的に屈
曲しており、その先端にボールを形成する際に、
第３図ｂに示すようにボールが偏心して形成され
ること、及びボールの形成の際に先端だけでなく
その近傍も加熱されるので、焼なましを受ける状
態となりボール直上でワイヤが軟化したり、局部
的にくびれたりするという問題があることを見い
出した。
ボールの偏心は、ボンデング部がパツドからは
み出し、他のボンデング部と短絡を引き起した
り、半導体素子を傷つけたりする原因になる。
発明者らは、ボール直上にくびれが生じたり、
軟化したりすると、焼なましを受けていない部分
は加工硬化を受けた状態のままであるから、第２
図に示すようにワイヤの残留加工歪により、ワイ
ヤとボンデング部とがきれいな曲線を描かずに折
れ曲つた形でワイヤボンデングされ、これが断線
の原因となること、特に半導体素子とリードフレ
ームとの接合面に段差を有するジユアルインライ
ン型IC、LSIでは第２図に示すようにワイヤと半
導体素子との短絡（矢印）の大きな原因となるこ
とを見い出した。
本発明の目的は、局部的な変形の少ないワイヤ
によつて半導体素子とリードフレームとを接続し
た半導体装置とその製法を提供することにある。
本発明の半導体装置は、金属膜を有する少なく
とも１つの半導体素子と、該半導体素子と結合さ
れるリードフレームと、前記半導体素子と前記リ
ードフレームとを電気的に結合するための金属ワ
イヤとを具備し、前記金属ワイヤは、その一端に
ボールを有し、該ボールが前記金属膜を介して前
記半導体素子と結合され、前記金属ワイヤの他端
が前記リードフレームと結合されたものであつ
て、前記金属ワイヤが、再結晶温度以上で全体が
焼なましされたCu又はAlよりなることを特徴と
する。
Cu又はAlワイヤは、加工されたままでは加工
硬化が著しく、ワイヤが硬化しているので、ボー
ルの表面に形成された酸化皮膜が前述の熱圧着又
は超音波接合において破壊しにくく、そのため接
合が困難になる。更に、前述のように接合時の加
熱によつて接合部近傍が軟化されるので、特に局
部的な変形率が大きい。そこで発明者らは、この
ような伸び率を有する金属ワイヤは焼なましされ
た軟いものにする必要があることを見い出した。
焼なましによつて、ワイヤ自体が全体に軟かく
なり、局部的な変形がなく、断線等の問題が解消
される。
金属ワイヤは、室温における比抵抗が15μΩcm
以下のものが好ましい。
ボンデングには、ボールボンデング及びウエツ
ジボンデングがあり、超音波接合又は熱圧着によ
つて行われる。ワイヤと半導体素子との接合は、
接合間隔に制限があるのでボールボンデングが好
ましく、リードフレームとワイヤとの接合は、効
能率のウエツジボンデングが好ましい。
ボールは、キヤピラリーに保持されたワイヤ先
端を放電、水素火炎、プラズマ、アーク、レーザ
ービーム等の手段によつて加熱溶融し、自らの張
力によつて形成する。特に、ワイヤ自体と他の電
極との間にアーク放電させて形成させる方法が好
ましい。このアーク放電はワイヤをマイナスとし
て行うことによりその表面に酸化膜のない清浄な
ボールができるとともに偏心のないボールが形成
される。また、アーム放電において正及び負の少
なくとも一方のパルス電流を流すこともでき、こ
のパルス電流によつてボールの形成に必要な適正
なアーク発生時間をコントロールすることができ
る。
正負の電流を流す場合には、クリーニングに必
要な時間とボール形成に必要な時間とを正負の時
間比を変えることによつてコントロールすること
ができる。クリーニングに必要な時間（放電時間
の10〜30％）は放電時間のうちのほんのわずかで
よい。
ボール形成における加熱溶融雰囲気は非酸化性
雰囲気が好ましい。特に、不活性ガス中に少量、
好ましくは５〜15体積％の還元性ガス（例えば水
素ガス）を含むものが好ましい。特にAlワイヤ
の場合には水素ガスを５〜15体積％含むものが好
ましい。
ボール径は基本的には任意であるがワイヤ径の
1.5〜４倍が好ましく、特に2.5〜3.5倍が好まし
い。
ワイヤの太さは、金属の種類によつて異なる
が、直径20〜100μｍが好ましい。一例で、Alは
50μｍ、Cuは30μｍ程度であり、比抵抗等を考慮
してワイヤ径が選定される。
焼なまし温度は、金属の種類によつて異なる
が、再結晶温度以上であることが好ましく、特に
実質的に弾性変形しない程度にほぼ完全に焼なま
しされる温度で完全焼なましするのが好ましい。
ワイヤは局部的に硬さが異なると前述のように
局部的な変形を生じるので、全体にほぼ同じ硬さ
を有するように軟化していることが好ましく、ワ
イヤとワイヤの一端に形成されるボールとの硬さ
がほぼ等しいことが好ましい。焼なまし温度は、
一例としてAlワイヤでは150〜400℃、Cuワイヤ
では400〜600℃が好ましい。
ワイヤは加工したままのものを、半導体素子に
接合するときに焼なましすることができるが、予
め全体が焼なましされたものをボンデングする方
がはるかに能率的である。
半導体素子或はリードフレームに融点以下の温
度で接合後、ワイヤはキヤピラリーに保持された
形で引つ張ることによつて接合部近傍で決断され
る。この切断はワイヤ全体が軟らかいのでカツタ
ー等で切断することが好ましい。
ワイヤは前述のように非常に細径で軟かいの
で、これを保護するための半導体素子、ワイヤ及
び外部リードフレームの一部を、樹脂（レジン）
又はセラミツクスで被うことが好ましい。樹脂は
液体をキヤステイング又はモールドして硬化さ
せ、セラミツクスは通常の方法でキヤツプシール
接合される。
本発明に用いられるボンデング用金属ワイヤ
は、直径20〜100μｍの細径のCu又はAlからなる
ワイヤであつて、焼なましされており、焼なまし
状態で室温における伸び率が60％以下であること
を特徴とする。
本発明のワイヤはボールボンデング用ワイヤと
して特に好ましい特性を有する。
ワイヤの焼なましは、非酸化性雰囲気中で、再
結晶温度以上で行われる。特に弾性変形が起こら
ない程度に完全焼なまし処理するのが好ましい。
尚、リードフレームは、Cu又はFe−Ni系合金
からなることが好ましく、表面にAg、Ni又はAl
膜を有することが好ましい。
実施例 １ 第４図は本発明の焼なましされたCuワイヤ１
をセラミツクパツケージ型半導体装置に適用した
ものの断面図である。Cuワイヤ１は直径30μｍ
で、Arガス中で400℃、１時間加熱の完全焼なま
し処理されたものである。ボンデングは、通常の
ウエツジボンダーによつて超音波接合したもので
ある。第４図に示すように、本発明によれば、ワ
イヤは軟いため接合自体もきわめて容易であるば
かりでなく、全体に軟いため所望のループ形状に
接合できることが確信された。４はAgめつき層
１０が形成されたCuリードフレーム、８は半導
体素子３の表面に形成されたAl蒸着膜による電
極、１１，１４はセラミツクスベース、９は低融
点ガラスである。
第４図に示されるように、本発明の半導体装置
は、ボンデングワイヤの局部的な変形がなく、ま
た、所望のループ形状が得られることから、半導
体素子３とリードフレーム４とに段差があつても
ワイヤが素子に短絡するようなことがない。
実施例 ２ 第５図は本発明の焼なましされたAlワイヤ１
をレジンモールド型半導体装置に適用したものの
断面図である。Alワイヤ１は直径50μｍで、N2ガ
ス中で250℃、１時間加熱の完全焼なまし処理さ
れたものである。Alワイヤ１はAl蒸着膜８が設
けられた半導体素子３にボールボンデングされ、
Agめつき層１０が設けられたリードフレーム４
にウエツジボンデングされている。ボールボンデ
ングされた後、SiO2等の保護皮膜１３が設けら
れ、その後、型を使つて液状の樹脂を流し込み、
硬化させることによりパツケージ１２を形成し、
第５図の半導体装置が形成される。
尚、９は、低融点ガラスである。
ボンデングは第３図ａおよびｂに示すキヤピラ
リー２にAlワイヤを押し出し、放電による方法
によつて行われた。前述のAlワイヤを、真空排
気した後、７％（体積）の水素を含むArガス雰
囲気で置換した雰囲気中で、1000V、10〜20ｍＡ
の放電条件で放電させて、その先端にボールを形
成させた。放電は、他に設けたＷ電極５をワイヤ
に移動させることによつて行われ、その時間を電
極の移動速度と、通電をパルス化して適宜定めら
れた周波数によつてコントロールした。また、通
電は正負のパルス電流によつて行い、ワイヤがク
リーニングされる側の通電を少なくして行つた。
得られたボール７をキヤピラリー２によつて半
導体素子に超音波接合し、次いで、ワイヤの他端
６をリードフレーム４に同じく超音波接合した。
この方法によつて得られたボールはわずかにワ
イヤ軸方向に長いたまご形のものが形成された
が、良好な球に近いものであつた。このボールは
ワイヤ自体の硬さとほぼ等しく、第５図に示すよ
うにボール近傍での局部的な変形がなく、きれい
なループ状のワイヤボンデングが得られることが
確認された。
また、ウエツジボンデング後のワイヤの切断は
キヤピラリーを持ち上げて引張ることによつて行
われたが、その切断もワイヤが軟いためきわめて
容易で、その引張りによつてボンデング部分が剥
離するようなことも全く起こらなかつた。
このように本発明の半導体装置はボールボンデ
ングにおいて、ワイヤの局部的な変形がなく、所
望のループが得られることから局部的な変形によ
る断線の心配がなく、またワイヤが素子に短絡す
るような事故も生じないものであつた。
実施例 ３ 本発明の焼きなましされたCuワイヤをレジン
モーレド型半導体装置に適用したものを説明す
る。本実施例に示す半導体装置も第５図に示すも
のと類似するため代用して説明する。Cuワイヤ
１は直径50μｍで、Arガス中で400℃、１時間加
熱の完全焼なまし処理されたものである。
Cuワイヤ１はAl蒸着膜８が設けられた半導体
素子３にボールボンデングされ、Agめつき層１
０が設けられたリードフレーム４にウエツジボン
デングされている。ボールボンデングされた後、
SiO2等の保護皮膜１３が設けられ、その後、型
を使つて液状の樹脂を流し込み、硬化させること
によつてパツケージ１２を形成し、半導体装置が
得られる。尚、９は、低融点ガラスである。
ボンデングはキヤピラリーにCuワイヤを押し
出し、放電による方法によつて行われた。前述の
Cuワイヤを、７％（体積）の水素を含むArガス
雰囲気中で、1000V、１〜5Aの放電条件で放電
させて、その先端にボールを形成させた。放電
は、他に設けたＷ電極をワイヤに移動させること
によつて行なわれた。このボールはワイヤ自体の
硬さとほぼ等しく、ボール近傍での局部的な変形
がなく、きれいなループ状のワイヤボンデングが
得られることが確認された。
また、ウエツジボンデング後のワイヤの切断は
キヤピラリーを持ち上げて引張ることによつて行
われた。Cuワイヤにおいても実施例２に示した
Alワイヤと同様の効果が得られた。
金属ワイヤの製造例 １ 直径30μｍの加工のままのCuワイヤと、それを
Arガス中で400℃、１時間加熱による完全焼なま
し処理を施したものとについて、第３図に示す方
法でワイヤ先端にボールを形成させた。
放電は、電圧1000V、電流10〜20ｍＡ、及び
Arガス中で行つた。放電時間は前述のようにＷ
電極の移動速度及びパルスの周波数によつてコン
トロールした。
上述と同様に直径50μｍの加工のままのAlワイ
ヤと、それを250℃、１時間加熱による完全焼な
まし処理を施したものとについて同じくボールを
形成させた。放電条件はCuワイヤのときとほぼ
同じである。
Cu及びAlワイヤのいずれも50個ずつボールを
形成し、ボールのくびれ及び偏心が生じたものの
数を調べ、その割合を求めた。その結果を、第６
図に示す。
図に示す如く、加工したままのAlワイヤはく
びれが60％、偏心が50％生じるのに対し、焼なま
したものはくびれが７％及び偏心が数％程度で、
ワイヤの軸に対して対称な丸いボールが形成され
ることが判明した。また、Cuワイヤは加工のま
までもAlワイヤより優れているが、焼なましし
たものはくびれ及び偏心がほとんど生じなかつ
た。
金属ワイヤの製造例 ２ 前述の焼なまししたAlワイヤについてガス雰
囲気を変えて前述した方法と同様にボールの形成
を検討した。ガス雰囲気として、Ar中に50体積
％までのH2ガスを混合させてその混合割合とボ
ールの形成状況との関係を調べた結果、H2量が
５〜15体積％のときボールの形成状況が最も良好
であつた。この場合の通電は、前述のパルス電流
のほか、ワイヤは正又は負としたものも同様に行
つた。
その結果、パルス電流によるものが、ボール径
の大きさのコントロールが容易で、かつ清浄なボ
ールが得られた。
以上、本発明によれば、ワイヤの結合部で、局
部的な変形の生じないワイヤボンデングが得ら
れ、断線のない半導体装置、特に信頼性の高い半
導体装置が得られる。
【図面の簡単な説明】
第１図及び第２図は従来のワイヤを使用して各
各ウエツジボンデング及びボールボンデングした
半導体装置の断面図、第３図は従来のワイヤを使
用して放電によつてボールを形成する状況を示し
た断面図、第４図は本発明のワイヤを使用してウ
エツジボンデングしたセラミツクパツケージ型半
導体装置の断面図、第５図は本発明のワイヤを使
用してボールボンデングしたレジンモールド型半
導体装置の断面図、第６図は従来のワイヤ及び本
発明のワイヤについて偏心及びくびれ発生率を示
す棒グラフである。 １……ワイヤ、２……キヤピラリー、３……半
導体素子、４……リードフレーム、５……Ｗ電
極、７……ボール、８……Al蒸着膜、９……低
融点ガラス、１０……Agめつき膜、１２……樹
脂、１３……保護皮膜、１１，１４……セラミツ
クベース。

Claims (1)

  1. 【特許請求の範囲】 １ 金属膜を有する少なくとも１つの半導体素子
    と、 該半導体素子と結合されるリードフレームと、 前記半導体素子と前記リードフレームとを電気
    的に結合するための金属ワイヤとを具備し、 前記金属ワイヤは、その一端にボールを有し、
    該ボールが前記金属膜を介して前記半導体素子と
    結合され、前記金属ワイヤの他端が前記リードフ
    レームと結合された半導体装置において、 前記金属ワイヤが、再結晶温度以上で全体が焼
    なましされたCu又はAlよりなることを特徴とす
    る半導体装置。 ２ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記半導体素子、前記金属ワイヤ及び前記
    リードフレームの一部がレジン又はセラミツクス
    で保護されていることを特徴とする半導体装置。 ３ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤとその一端に形成された前
    記ボールとの硬さが、ほぼ等しいことを特徴とす
    る半導体装置。 ４ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤが、実質的に弾性変形しな
    い程度に完全焼なましされていることを特徴とす
    る半導体装置。 ５ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤの太さが、20〜100μｍで
    あることを特徴とする半導体装置。 ６ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤは、室温における比抵抗が
    15μΩcm以下であることを特徴とする半導体装置。 ７ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤが、焼きなまし状態で室温
    における伸び率が60％以下であることを特徴とす
    る半導体装置。 ８ 特許請求の範囲第１項記載の半導体装置にお
    いて、前記金属ワイヤがCuよりなり、前記ワイ
    ヤの一端に形成されたボールが、前記半導体素子
    表面に形成されたAl膜にボールボンデングされ、
    前記ワイヤの他端が、Cu又はFe−Ni系合金から
    なるリードフレームの表面に形成されたAg、Ni
    又はAl膜にウエツジボンデングされていること
    を特徴とする半導体装置。 ９ 金属膜が形成された半導体素子と、リードフ
    レームとを結合するため、金属ワイヤの一端にボ
    ールを形成し、該ボールを前記金属膜を介して前
    記半導体素子と結合し、前記金属ワイヤの他端を
    前記リードフレームと結合する半導体装置の製法
    において、 前記金属ワイヤがCu又はAlよりなり、全体を
    予め再結晶温度以上で焼なましし、前記ワイヤの
    一端に溶融によつてボールを形成し、該ボールを
    前記金属膜を介して前記半導体素子に融点以下の
    温度で接合し、前記ワイヤの他端を前記リードフ
    レームに融点以下の温度で接合することを特徴と
    する半導体装置の製法。 １０ 特許請求の範囲第９項記載の半導体装置の
    製法において、前記金属ワイヤをキヤピラリーよ
    り押し出し、その一端と他に設けられた電極との
    間を放電させ、前記ワイヤの先端にボールを形成
    し、該ボールを前記半導体素子の金属膜に接触さ
    せ、その接触部を超音波振動によつて前記半導体
    素子に接合した後、前記ワイヤの他端を超音波振
    動によつて前記リードフレームに接合し、前記ワ
    イヤを前記リードフレームの接合部分で切断する
    ことを特徴とする半導体装置の製法。
JP57036468A 1982-03-10 1982-03-10 半導体装置及びその製法 Granted JPS58154241A (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP57036468A JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法
DE3382828T DE3382828T2 (de) 1982-03-10 1983-02-23 Metalldraht für integrierte Schaltungen
DE8383300956T DE3381665D1 (de) 1982-03-10 1983-02-23 Halbleiteranordnung in harz-verkapselung.
EP89202084A EP0349095B1 (en) 1982-03-10 1983-02-23 Metal wire for use in integrated circuits
DE3382826T DE3382826T2 (de) 1982-03-10 1983-02-23 Verfahren zum Herstellen einer harzumhüllte Halbleiteranordnung
EP83300956A EP0088557B1 (en) 1982-03-10 1983-02-23 Resin encapsulated semiconductor device
EP89202085A EP0348018B1 (en) 1982-03-10 1983-02-23 Method of manufacture of a resin encapsulated semiconductor device
KR1019830000939A KR910000154B1 (ko) 1982-03-10 1983-03-08 반도체장치와 그 재법 및 그것에 사용되는 본딩와이어
US07/818,457 US5153704A (en) 1982-03-10 1992-01-03 Semiconductor device using annealed bonding wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57036468A JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4006148A Division JPH0719790B2 (ja) 1992-01-17 1992-01-17 ボンデング用ワイヤとその製法

Publications (2)

Publication Number Publication Date
JPS58154241A JPS58154241A (ja) 1983-09-13
JPH0514425B2 true JPH0514425B2 (ja) 1993-02-25

Family

ID=12470640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57036468A Granted JPS58154241A (ja) 1982-03-10 1982-03-10 半導体装置及びその製法

Country Status (5)

Country Link
US (1) US5153704A (ja)
EP (2) EP0088557B1 (ja)
JP (1) JPS58154241A (ja)
KR (1) KR910000154B1 (ja)
DE (3) DE3382826T2 (ja)

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US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
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US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP2522524B2 (ja) * 1988-08-06 1996-08-07 株式会社東芝 半導体装置の製造方法
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Also Published As

Publication number Publication date
KR910000154B1 (ko) 1991-01-21
DE3382828T2 (de) 2000-01-20
KR840004305A (ko) 1984-10-10
DE3381665D1 (de) 1990-07-19
US5153704A (en) 1992-10-06
EP0088557A2 (en) 1983-09-14
EP0349095A3 (en) 1990-05-02
EP0349095A2 (en) 1990-01-03
DE3382826D1 (de) 1999-06-24
EP0088557B1 (en) 1990-06-13
EP0088557A3 (en) 1985-09-25
DE3382826T2 (de) 2000-01-20
JPS58154241A (ja) 1983-09-13
EP0349095B1 (en) 1999-05-19
DE3382828D1 (de) 1999-06-24

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