CN107527827B - 通过无焊剂焊接制造的半导体器件 - Google Patents

通过无焊剂焊接制造的半导体器件 Download PDF

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CN107527827B
CN107527827B CN201710463118.1A CN201710463118A CN107527827B CN 107527827 B CN107527827 B CN 107527827B CN 201710463118 A CN201710463118 A CN 201710463118A CN 107527827 B CN107527827 B CN 107527827B
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semiconductor chip
soft solder
solder material
layer
carrier
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CN107527827A (zh
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吴祖华
A.R.穆罕默迪
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明公开通过无焊剂焊接制造的半导体器件。该方法包括：将第一半导体芯片放置在载体上，其中第一半导体芯片的第一主表面面向载体，其中软焊接材料的第一层提供在第一主表面和载体之间，并且在放置期间施加热量使得软焊接材料的第一层处的温度等于或高于软焊接材料的第一层的熔融温度，将包括第一接触区域的接触夹放置在第一半导体芯片上，其中第一接触区域面向第一半导体芯片的第二主表面，其中软焊接材料的第二层提供在第一接触区域和第二主表面之间，并且在放置期间施加热量使得软焊接材料的第二层处的温度等于或高于软焊接材料的第二层的熔融温度，以及其后冷却软焊接材料的第一和第二层来固化软焊接材料。

Description

通过无焊剂焊接制造的半导体器件
技术领域
本公开涉及一种用于制造半导体器件的方法和一种半导体器件。本公开特别地涉及一种用于制造半导体器件的方法，其中通过使用软焊接材料将元件彼此连接，以及一种包括软焊接材料层的半导体器件。
背景技术
半导体器件制造商不断努力增加其产品的性能，同时降低制造成本。半导体器件的制造中的一个重要因素是连接技术，即将不同元件彼此连接以建造半导体器件。电子电路或器件非常经常制造在半导体晶片上，然后将其单体化以制造半导体芯片。随后，半导体芯片可以安装在诸如引线框架的导电载体上。此外，像接触夹或引线接合那样的接触元件可以连接到半导体芯片或引线框架的部分。这些接触元件其本身可以形成外部接触元件，或者可以连接到外部接触元件。在后续步骤中，可以施加密封剂以形成模制的半导体器件封装，其中外部接触元件通过密封体的外表面延伸。以低费用提供高可靠性连接的连接技术是所期望的。
发明内容
根据本公开的第一方面，一种用于制造半导体器件的方法包括将第一半导体芯片放置在载体上，其中第一半导体芯片的第一主表面面向载体，其中软焊接材料的第一层提供在第一主表面和该载体之间，并且在放置期间施加热量使得软焊接材料的第一层处的温度等于或高于软焊接材料的第一层的熔融温度，将包括第一接触区域的接触夹放置在第一半导体芯片上，其中该第一接触区域面向第一半导体芯片的第二主表面，其中软焊接材料的第二层提供在第一接触区域和第二主表面之间，并且在放置期间施加热量使得软焊接材料的第二层处的温度等于或高于软焊接材料的第二层的熔融温度，以及其后冷却软焊接材料的第一和第二层以固化该软焊接材料。
根据本公开的第二方面，一种用于制造半导体器件的方法包括在等于或大于第一无焊剂软焊料沉积物的熔融温度的温度下向载体施加第一无焊剂软焊料沉积物，将第一半导体芯片放置在第一无焊剂软焊料沉积物上，在等于或大于第二无焊剂软焊料沉积物的熔融温度的温度下向第一半导体芯片施加第二无焊剂软焊料沉积物，将接触夹放置在第二无焊剂软焊料沉积物上，以及其后冷却第一和第二软焊料沉积物以固化第一和第二软焊料沉积物。
根据本公开的第三方面，一种半导体器件包括载体，安装在载体上的第一半导体芯片，载体和第一半导体芯片之间的第一软焊料接合层，安装在第一半导体芯片上的接触夹，以及第一半导体芯片和接触夹之间的第二软焊料接合层。
当阅读以下详细描述并考虑附图时，本领域技术人员认识到附加的特征和优点。
附图说明
包括附图以提供对示例的进一步理解，并且附图被并入并构成本说明书的一部分。附图图示示例并与描述一起用来解释示例的原理。将容易地领会其他示例和示例的预期优点中的许多，因为它们通过参考以下详细描述而变得更好理解。
附图的元件不一定相对于彼此成比例。相同的参考数字指定相应的类似部分。
图1示出根据第一方面的用于图示用于制造半导体器件的示例性方法的流程图。
图2示出根据第二方面的用于图示用于制造半导体器件的示例性方法的流程图。
图3包括图3A-3C并且示出用于图示用于制造包括半导体芯片和接触夹的半导体器件的示例性方法的示意性横截面侧视图表示。
图4包括图4A-4C并且示出用于图示用于制造包括第一半导体芯片、接触夹和第二半导体芯片的半导体器件的示例性方法的示意性横截面侧视图表示。
图5包括图5A-5C并且示出用于图示用于制造包括第一半导体芯片，第二半导体芯片、接触夹和与接触夹连接的接触元件的半导体器件的示例性方法的示意性横截面侧视图表示。
具体实施方式
现在参考附图来描述各方面和各示例，其中自始至终通常利用相同的参考数字来指代相同的元件。在下面的描述中，为了解释的目的，阐述了许多具体细节，以便提供对示例的一个或多个方面的透彻理解。然而，对于本领域技术人员可能明显的是，可以用较少程度的具体细节来实践示例的一个或多个方面。在其他情况下，以示意形式示出已知的结构和元件以便促进描述示例的一个或多个方面。要理解的是，在不脱离本公开的范围的情况下，可以利用其他示例并且可以做出结构或逻辑改变。应该进一步指出的是，附图不按比例或者不一定按比例。
在下面的详细描述中，参考形成本文的一部分的附图，并且在所述附图中通过图示示出在其中可以实践本公开的具体方面。就这一点而言，可以参考正描述的附图的取向来使用诸如“顶部”、“底部”、“前面”、“后面”等方向术语。由于可以以许多不同的取向来定位所描述的器件的部件，所以方向术语可以用于说明的目的并且决不是限制性的。所理解的是，在不脱离本公开的范围的情况下，可以利用其他方面并且可以做出结构或逻辑改变。因此，不要以限制性含义来理解以下详细描述，并且本公开的范围由所附权利要求限定。
此外，虽然可以仅关于若干实施方式中的一个公开示例的特定特征或方面，但是这样的特征或方面可以与其他实施方式的一个或多个其他特征或方面组合，如对于任何给定的或特定应用可能期望的并且有利的那样，可能期望的。此外，在详细描述或权利要求中使用术语“包括”、“具有”、“带有”或其其他变体的程度上，这样的术语意图以与术语“包括”类似的方式是包括的。可以使用术语“被耦合”和“被连接”连同其派生词。应当理解，这些术语可以用来指示两个元件彼此协作或相互作用，而不管它们是直接物理或电接触还是它们未彼此直接接触。而且，术语“示例性”仅仅意味着作为示例，而不是最佳或最优。因此，不要以限制性含义来理解以下详细描述，并且本公开的范围由所附权利要求限定。
电子器件的用于制造电子器件的方法的示例可以使用各种类型的半导体器件。所述示例可以使用体现在半导体管芯或半导体芯片中的晶体管器件，其中半导体管芯或半导体芯片可以以如由半导体晶片制造并且从半导体晶片切出的半导体材料块的形式或者以其中已经进行了进一步的处理步骤（像，例如将密封层应用于半导体管芯或半导体芯片）的另一种形式来提供。所述示例还可以使用水平或垂直晶体管器件，其中那些结构可以以如下形式来提供：其中晶体管器件的所有接触元件被提供在半导体管芯的主面之一上（水平晶体管结构）；或者其中至少一个电接触元件布置在所述半导体管芯的第一主面上并且至少一个其他电接触元件布置在与所述半导体管芯的主面相对的第二主面上（垂直晶体管结构），像，例如MOS晶体管结构或IGBT（绝缘栅双极型晶体管）结构。
在任何情况下，电子器件（例如，半导体管芯或半导体芯片）可以包括在其外表面的一个或多个上的接触元件或接触焊盘，其中接触元件与相应的半导体管芯的电路（例如，晶体管）电连接并且用于将半导体管芯电连接到外部。接触元件可以具有任何期望的形式或形状。例如，它们可以具有在半导体管芯的外表面上的连接盘（即，平坦的接触层）的形式。接触元件或接触焊盘可以由任何导电材料（例如，由金属如铝、金、或铜，或例如金属合金），或导电有机材料，或导电半导体材料制成。接触元件也可以形成为上述或另外的材料中的一种或多种的层堆叠，以便创建例如NiPdAu的堆叠。
电子器件的示例可以包括使半导体晶体管芯片嵌入在其中的密封剂或密封材料。密封材料可以是任何电绝缘材料，像例如任何种类的模塑材料，任何种类的树脂材料，或任何种类的环氧材料，双马来酰亚胺或氰酸酯。密封材料也可以是聚合物材料，聚酰亚胺材料，热塑性材料，陶瓷材料和玻璃材料。密封材料还可以包括上述材料中的任何材料，并且还包括嵌入在其中的填充材料，像，例如导热增加物。这些填料增加物可以由SiO、Al2O3、ZnO、AlN、BN、MgO、Si3N4或陶瓷，或金属材料像例如Cu、Al、Ag或Mo制成。此外，填料增加物例如可以具有纤维的形状，并且可以由碳纤维或纳米管制成。
在用于制造电子器件的方法被描述为具有具体次序的方法步骤的范围内，应当提及的是该方法步骤的任何其他适当的次序可以由技术人员采用。应该进一步提及的是，与所描述的方法有关提及的任何评述、评论或特征要被理解为也公开由这样的评述、评论或特征获得或产生的器件，即使这样的器件没有在图中明确描述或图示。此外，反之亦然，与器件有关提及的任何评述、评论或特征也要被理解为还公开用于提供或制造相应器件特征的方法步骤。
如遍及本公开使用的术语“软焊料”或“软焊接材料”在某种意义上可以理解为意指具有低于400℃的熔融温度的焊接材料。
图1示出根据第一方面的用于图示用于制造半导体器件的示例性方法的流程图。该方法：将第一半导体芯片放置在载体上，其中第一半导体芯片的第一主表面面向载体，其中软焊接材料的第一层提供在第一主表面和该载体之间，并且在放置期间施加热量使得软焊接材料的第一层处的温度等于或高于软焊接材料的第一层的熔融温度（s1）；将包括第一接触区域的接触夹放置在第一半导体芯片上，其中该第一接触区域面向第一半导体芯片的第二主表面，其中软焊接材料的第二层提供在第一接触区域和第二主表面之间，并且在放置期间施加热量使得软焊接材料的第一层处的温度等于或高于软焊接材料的第一层的熔融温度（s2）；以及其后冷却软焊接材料的第一和第二层以固化软焊接材料（s3）。
根据第一方面的方法的示例，软焊接材料的第一和第二层不包含任何焊剂材料。术语“焊剂”可以指辅助焊接过程和接合过程的任何种类的化学试剂或添加剂。特别地，术语“焊剂”可以指化学清洁剂、净化剂或流化剂。
根据第一方面的方法的示例，在提供软焊接材料的第一和第二层之后，未将焊剂材料添加到软焊接材料的第一和第二层中的任何一个。
因此，上述示例暗示焊剂材料既不与第一和第二层的沉积一起沉积，也不在软焊接材料的第一和第二层已经被沉积之后添加到第一和第二层。
根据第一方面的方法的示例，软焊接材料的第一和第二层中的一个或多个包括低于400℃，更特别地低于350℃，更特别地低于300℃，更特别地低于250℃，更特别地低于200℃的熔点。
根据第一方面的方法的示例，软焊接材料的第一和第二层中的一个或多个是铅基的或无铅的。根据其示例，软焊接材料的第一和第二层中的一个或多个由Pb/Sn1/Ag1.5、Pb/Sn2/Ag2.5或Pb/Sn5组成。
根据第一方面的方法的示例，第一层的软焊接材料与第二层的软焊接材料相同。
根据第一方面的方法的示例，第一层的软焊接材料与第二层的软焊接材料不同。
根据第一方面的方法的示例，第一半导体芯片是功率半导体芯片。在半导体晶体管芯片（像，例如绝缘栅双极型晶体管（IGBT）芯片）的情况下，术语“功率”可以暗示高于1200V的IGBT的发射极集电极电压。
根据第一方面的方法的示例，该方法用于制造功率晶体管封装，像，例如TO263封装，TO252封装或TOLL封装。
根据第一方面的方法的示例，接触夹的第一接触区域和第一半导体芯片的第二主表面包括相同的金属材料。特别地，第一半导体芯片的第二主表面可以包括与接触夹的第一接触区域相同的金属材料的接触焊盘。
根据第一方面的方法的示例，该方法还包括：提供具有第一主表面和与第一主表面相对的第二主表面的第二半导体芯片，以及将所述第二半导体芯片放置在所述接触夹上，其中软焊接材料的第三层提供在第二半导体芯片和所述接触夹之间。根据其另外的示例，第一、第二和第三层的软焊接材料彼此类似或相等，或者包括类似或相等的性质。
根据其另外的示例，第二半导体芯片是功率半导体芯片。特别地，第一和第二半导体芯片两者都可以由彼此连接以形成像例如半桥电路的高功率开关电路的功率半导体芯片组成。
根据第一方面的方法的示例，载体被放置在芯片附接装置中，特别地在气密指引隧道（hermetic index tunnel）中，其中产生温度以使得第一和第二层的软焊接材料被熔化。根据其另外的示例，在气密指引隧道内产生包含氢气和氮气的气氛，特别地在从86％至97％（特别地，从88％至95％）的范围内的氢气，以及在从4％至14％（特别地，从5％至12％）范围内的氮气，以便防止载体或焊料上的氧化。控制温度使得其等于或高于软焊接材料的熔融温度。
根据第一方面的方法的示例，在芯片附接装置内的冷却区域中执行冷却以在形成气体环境下固化软焊接材料。
根据第一方面的用于制造半导体器件的方法的另外的示例可以通过结合在下文中将与本公开的另外的方面和示例有关描述的示例或特征来形成。
图2示出根据第二方面的用于图示用于制造半导体器件的示例性方法的流程图。该方法包括：在等于或大于第一无焊剂软焊料沉积物的熔融温度的温度下向载体施加第一无焊剂软焊料沉积物（s1）；将第一半导体芯片放置在第一无焊剂软焊料沉积物上（s2）；在等于或大于第二无焊剂软焊料沉积物的熔融温度的温度下向第一半导体芯片施加第二无焊剂软焊料沉积物（s3）；将接触夹放置在第二无焊剂软焊料沉积物上（s4）；以及其后冷却第一和第二软焊料沉积物以固化第一和第二软焊料沉积物（s5）。
根据第二方面的方法的示例，在施加第一和第二无焊剂软焊料沉积物之后，未将焊剂材料添加到软焊料沉积物的第一和第二层中的任何一个。
根据第二方面的方法的示例，该方法还包括：将第三无焊剂软焊料沉积物施加到接触夹，以及将第二半导体芯片放置在第三无焊剂软焊料沉积物上。根据其另外的示例，在施加和放置期间施加热量使得温度等于或大于第三无焊剂软焊料沉积物的熔融温度。根据其另外的示例，在施加第三软焊料沉积物之后，未将焊剂材料添加到第三软焊料沉积物。
根据第二方面的方法的示例，施加的最大温度低于400℃，更特别地低于350℃，更特别地低于300℃，更特别地低于250℃，更特别地低于200℃。施加的最大温度取决于第一、第二和第三（如果有的话）软焊料沉积物的熔融温度，或者在不同的软焊接材料的情况下，取决于第一、第二和第三（如果有的话）软焊料沉积物的最高熔融温度。
根据第二方面的用于制造半导体器件的方法的另外的示例可以通过结合上面与根据第一方面的方法有关描述的特征的示例来形成。
图3包括图3A-3C并示意性地图示用于制造半导体器件的方法。图3A示意性地图示载体15，载体15可以例如是引线框架的芯片焊盘、PCB（印刷电路板）、DCB（直接铜接合）（其是在其顶部和底部表面上具有铜层的陶瓷基板）等。载体15由上表面14制成或者具有上表面14，所述上表面14由能够形成扩散焊料接合的任何期望金属例如Cu、Ni、NiSn、Au、Ag、Pt、Pd或这些金属中的一种或多种的合金制成。
在图3A中，载体被放置在芯片附接装置的气密指引器隧道（hermetic indexertunnel）50中，并且软焊接材料的第一层13沉积在载体15的上表面14上。软焊接材料13的第一层可以由上述任何软焊接材料制成或可以具有上述软焊接材料的任何性质。
根据示例，通过使用溅射工艺沉积软焊接材料的第一层13。在这种情况下，将沉积速率设定为使得获得所沉积软焊接材料的期望量或层厚度这样的值。
根据一个示例，软焊接材料的第一层13可以通过电化学沉积工艺来沉积。为此，将包含焊料颗粒的溶液施加到载体15，并且在载体15和参考电极之间施加适当的电压使得焊料颗粒沉积在载体15的上表面上。
根据一个示例，软焊接材料的第一层13可以通过在载体15的上表面14上印刷或分配软焊接材料膏来沉积。该软焊接材料膏可以包含如上所述的金属颗粒。其可以无本领域已知的用于分离金属颗粒的任何有机溶剂。
图3A还示意性地图示半导体芯片10，其被放置在载体15上，其中半导体芯片10的第一主表面11面向载体15，并且第二主表面12背离载体15。软焊接材料的第一层13布置在半导体芯片10的第一主表面11和载体15的上表面14之间。第一芯片电极（未示出）可以布置在半导体芯片10的第一主表面11处，该第一主表面11与软焊接材料的第一层13相对且邻接。第一半导体芯片10可以是例如功率半导体芯片。
在图3A中，软焊接材料的第二层16沉积在半导体芯片10的第二主表面12上。第二芯片电极（未示出）可以在半导体芯片10的第二主表面12处延伸，并且软焊接材料的第二层16可以被放置在该第二芯片电极上。
在图3B中，接触夹25放置在半导体芯片10之上。接触夹25可以具有第一接触区域26。接触夹25被放置成使得第一接触区域26放置在软焊接材料的第二层16之上。接触夹25或至少接触夹25的第一接触区域26可以由能够形成扩散焊料接合的任何期望金属例如Cu、Ni、NiSn、Au、Ag、Pt、Pd或这些金属中的一种或多种的任何合金制成。
接触夹25可以是连接或形成待制造的半导体器件的外部端子的引线。作为示例，接触夹25可以是引线框架的引线，并且载体15可以是引线框架的芯片焊盘。如将在下面进一步更详细地描述的，在其他实施例中，接触夹25可以是桥接在第二芯片电极和半导体器件的外部端子（诸如例如，引线框架的引线）之间的传导元件。
在图3C中，将图3B中示出的布置引入到冷却区60中。在冷却区60中，将第一层13和第二层16的软焊接材料带到较低温度以便使软焊接材料固化，并且从而将半导体芯片10附接到载体15，并且将接触夹25附接到半导体芯片10。
图4包括图4A-4C，其中将第二半导体芯片20施加到接触夹25。
图4A再次示出与上面示出和解释的图3B相同的配置。图4B示出软焊接材料的第三层21已经沉积在接触夹25的上表面上。特别地，第三层21的软焊接材料可以通过与上文描述的相同技术沉积在接触夹25上，并且软焊接材料可以与用于软焊接材料的第一和第二层13和16的材料相同。
在图4B中，另外将第二半导体芯片20施加到软焊接材料的第三层21。第二半导体芯片20例如也可以是功率半导体芯片。
在图4C中，将图4B中示出的布置引入到冷却区60中。软焊接材料的第一、第二和第三层13、16和21以与上面参照图3A至3C描述的相同方式被处理，以便将半导体芯片10附接到载体15，以将接触夹25附接到半导体芯片10，并将第二半导体芯片20附接到接触夹25。
图5包括图5A-5C，并且除了图3之外还示出接触夹25与引线30的连接。在图5A中，提供引线30。引线30可以是引线框架的引线，其中在这种情况下，载体15可以是引线框架的芯片焊盘。软焊接材料的第三层31已经沉积在引线30的上表面上。与软焊接材料的第一和第二层13和16有关的所有公开类似地应用于软焊接材料的第三层31。特别地，软焊接材料的第三层31的软焊接材料可以通过与上面描述的相同的技术沉积在引线30上，并且该软焊接材料可以与用于第一和第二层13和16的软焊接材料相同。
在图5B中，接触夹25放置在半导体芯片10和引线30上。接触夹25具有与软焊接材料的第三层31相对并与其邻接的第二接触区域27。第二接触区域27可以由与上面关于第一接触区域26提到的相同的材料组成。
在图5C中，将图5B中示出的布置引入到冷却区60中。软焊接材料的第一、第二和第三层13、16和31以与上面参考图3A至3C和4A至4C描述的相同的方式进行处理，以便将半导体芯片10附接到载体15，将接触夹25附接到半导体芯片10，并将接触夹25附接到引线30。
虽然已经关于一个或多个实施方式说明和描述了本公开，但是在不脱离所附权利要求的精神和范围的情况下，可以对所说明的示例做出更改和/或修改。特别是关于由以上描述的部件或结构（组件、器件、电路、系统等）执行的各种功能，用于描述这些部件的术语（包括对“装置”的引用）旨在（除非另有说明）对应于执行描述的部件的规定功能（例如，其在功能上等同）的任何部件或结构，即使在结构上不等同于在本文中说明的本公开的示例性实施方式中执行该功能的公开的结构。

Claims (28)

1.一种用于制造半导体器件的方法，包括：
将第一半导体芯片放置在载体上，其中第一半导体芯片的第一主表面面向所述载体，其中软焊接材料的第一层提供在第一主表面和所述载体之间，并且在放置期间施加热量使得在软焊接材料的第一层处的温度等于或高于软焊接材料的第一层的熔融温度；
将包括第一接触区域的接触夹放置在第一半导体芯片上，其中第一接触区域面向第一半导体芯片的第二主表面，其中软焊接材料的第二层提供在第一接触区域和第二主表面之间，并且在放置期间施加热量使得软焊接材料的第二层处的温度等于或高于软焊接材料的第二层的熔融温度；以及其后
冷却软焊接材料的第一和第二层以固化软焊接材料。
2.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层不包含任何焊剂材料。
3.根据权利要求1或2所述的方法，其中
在提供软焊接材料的第一和第二层之后，未将焊剂材料添加到软焊接材料的第一和第二层中的任何一个。
4.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个包括低于400℃的熔点。
5.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个是铅基的或无铅的。
6.根据权利要求5所述的方法，其中
软焊接材料的第一和第二层中的一个或多个由Pb/Sn1/Ag1.5、Pb/Sn2/Ag2.5或Pb/Sn5组成。
7.根据权利要求1所述的方法，进一步包括步骤：
将载体放置在气密指引隧道中。
8.根据权利要求1所述的方法，其中
第一层的软焊接材料不同于第二层的软焊接材料。
9.根据权利要求1所述的方法，其中
第一半导体芯片是功率半导体芯片。
10.根据权利要求1所述的方法，其中
接触夹的第一接触区域和第一半导体芯片的第二主表面包括相同的金属材料。
11.根据权利要求1所述的方法，还包括：
提供具有第一主表面和与所述第一主表面相对的第二主表面的第二半导体芯片；以及
将所述第二半导体芯片放置在所述接触夹上，其中软焊接材料层的第三层提供在所述第二半导体芯片和所述接触夹之间。
12.根据权利要求11所述的方法，其中
第三层的软焊接材料与第一和第二层的软焊接材料相同，或者包括第一和第二层的软焊接材料的相似或相同的性质。
13.根据权利要求11或12所述的方法，其中
第二半导体芯片是功率半导体芯片。
14.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个包括低于350℃的熔点。
15.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个包括低于300℃的熔点。
16.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个包括低于250℃的熔点。
17.根据权利要求1所述的方法，其中
软焊接材料的第一和第二层中的一个或多个包括低于200℃的熔点。
18.一种用于制造半导体器件的方法，包括：
在等于或大于第一无焊剂软焊料沉积物的熔融温度的温度下向载体施加第一无焊剂软焊料沉积物；
将第一半导体芯片放置在第一无焊剂软焊料沉积物上；
在等于或大于第二无焊剂软焊料沉积物的熔融温度的温度下向所述第一半导体芯片施加第二无焊剂软焊料沉积物；
将接触夹放置在第二无焊剂软焊料沉积物上；以及其后
冷却第一和第二软焊料沉积物以固化第一和第二软焊料沉积物。
19.根据权利要求18所述的方法，还包括：
在等于或大于第三无焊剂软焊料沉积物的熔融温度的温度下向所述接触夹施加第三无焊剂软焊料沉积物；以及
将第二半导体芯片放置在第三无焊剂软焊料沉积物上。
20.根据权利要求18或19所述的方法，其中
施加热量包括将载体、半导体芯片和接触夹放置在气密指引隧道中，其中
在所述气密指引隧道中产生的最大温度低于400℃。
21.根据权利要求18或19所述的方法，其中
施加热量包括将载体、半导体芯片和接触夹放置在气密指引隧道中，其中
在所述气密指引隧道中产生的最大温度低于350℃。
22.根据权利要求18或19所述的方法，其中
施加热量包括将载体、半导体芯片和接触夹放置在气密指引隧道中，其中
在所述气密指引隧道中产生的最大温度低于300℃。
23.根据权利要求18或19所述的方法，其中
施加热量包括将载体、半导体芯片和接触夹放置在气密指引隧道中，其中
在所述气密指引隧道中产生的最大温度低于250℃。
24.根据权利要求18或19所述的方法，其中
施加热量包括将载体、半导体芯片和接触夹放置在气密指引隧道中，其中
在所述气密指引隧道中产生的最大温度低于200℃。
25.一种半导体器件，包括：
载体；
安装在所述载体上的第一半导体芯片；
在所述载体和所述第一半导体芯片之间的第一软焊料接合层；
安装在所述第一半导体芯片上的接触夹；以及
在所述第一半导体芯片和所述接触夹之间的第二软焊料接合层，
其中，所述第一软焊料接合层和所述第二软焊料接合层由无焊剂软焊料在气密指引隧道中形成。
26.根据权利要求25所述的半导体器件，还包括：
安装在所述接触夹上的第二半导体芯片；以及
在所述接触夹和第二半导体层之间的第三软焊料接合层。
27.根据权利要求25或26所述的半导体器件，其中
第一、第二和第三软焊料接合层中的一个或多个由Pb/Sn1/Ag1.5、Pb/Sn2/Ag2.5或Pb/Sn5组成。
28.根据权利要求25或26所述的半导体器件，其中
第一和第二半导体芯片中的一个或多个是功率半导体芯片。
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