JPS62219935A - ワイヤボンデイング装置 - Google Patents

ワイヤボンデイング装置

Info

Publication number
JPS62219935A
JPS62219935A JP61064467A JP6446786A JPS62219935A JP S62219935 A JPS62219935 A JP S62219935A JP 61064467 A JP61064467 A JP 61064467A JP 6446786 A JP6446786 A JP 6446786A JP S62219935 A JPS62219935 A JP S62219935A
Authority
JP
Japan
Prior art keywords
wire
copper
bonding
electrode pad
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61064467A
Other languages
English (en)
Inventor
Tadanori Yamamoto
山本 忠則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP61064467A priority Critical patent/JPS62219935A/ja
Publication of JPS62219935A publication Critical patent/JPS62219935A/ja
Pending legal-status Critical Current

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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上皇且且立川 本発明は電極間を金属細線にて電気的に接続するワイヤ
ボンディング装置に関するものである。
従漣四目支M 例えば、IC等の半導体装置の製造においてリードフレ
ームのベレットマウント部に半導体ベレット〔以下単に
ベレットと称す〕をマウン1−シた後、ペレット上の電
極とリードフレームのリードとを金属細線〔以下ワイヤ
と称す〕にてボンディングし電気的に接続する。上記ボ
ンディングはワイヤボンディング装置にてペレットの電
極とリードフレームのり一ド遊端部とにワイヤを順次押
し付け、押圧と同時にボンディング面に平行に超音波振
動によるスクラブを加えて接合させるもので、ワイヤに
は金線やアルミニウム線が、従来、用いられる。
第2図及び第3図はワイヤボンディング装置の一例を示
すもので、(1)はリードフレーム、(2)はガイドレ
ール、(3)は超音波ボンディング装置〔図示せず〕の
ホーン、(4)はボンディングツール〔キャピラリ〕、
(5)はワイヤ、(6)はワイヤ送り機構である。
リードフレーム(1)は複数のベレットマウント部(7
)(7)・・・と、マウント部(7)(7)・・・の近
傍に位置する複数本−組のリード(8)  (8)・・
・とを有し、各マウント部(7)と各リード(8)とを
タイバ(9)にて連結一体化したものである。ガイドレ
ール(2)はす−ドフレーム(1)をガイドするもので
、図示しないが、リードフレーム(1)をその長手方向
に間歇送りする送り機構が設けられている。
ホーン(3)は遊端部にキャピラリ(4)が固定されて
おり、ボンディング装置本体部からガイドレール(2)
上に延びて本体部と共に上下動及びリードフレームの送
り方向とその直交方向とに水平移動する。
そして、上記リードフレーム(1)がキャピラリ (4
)の下方のワイヤボンディング位置に間歇的に送られて
くると、図示しないが、テレビカメラにてペレット(1
0)上の電極位置を検出し、ホーン(3)を上下動させ
ると共に水平移動させ、キャピラリ (4)をペレット
(10)上の電極とリード(8)の遊端との間で移動さ
せワイヤボンディングする。
上記ワイヤボンディング装置によるポールボンディング
作業を第4図乃至第9図を参照し次に示す。まず、第4
図に示すようにキャピラリ(4)から少し引き出したワ
イヤ(5)、例えば金線(11)の先端と放電電極(1
2)との間で放電させて金線の先端部を熔融し金球(1
1a )を形成する0次に第5図に示すようにキャピラ
リ (4)を第1の被接続部であるペレット(lO)の
電極パッド上に移動させ、第6図に示すように金球(1
1a )をキャピラリ (4)の先端(4a)によって
ペレット(lO)の電極パッドに押し付け、キャピラリ
 (4)から超音波振動を加えて、金球(11a )を
電極パッドに接合する。なお図中(13)は半田層を示
す。次に第7図に示すように金線(11)をキャピラリ
(4)から引出しながらキャピラリ(4)を第2の被接
続部であるリード(8)のボンディング位置(8a)上
に位置させる。次にこの位置で第8図に示すようにキャ
ピラリ (4)を下降させ、その先端(4a)で金線(
11)をリード(8)のボンディング位W (8a)に
押し付はキャピラリ (4)から超音波振動を加えて金
線(11)とリード(8)とを接合する0次に第9図に
示すようにキャピラリ(4)を少しだけ上昇させて金線
(11)をキャピラリ(4)から引き出し、金線(11
)をハサミ〔図示せず〕で切断したり、超音波ボンディ
ングにより弱くなった部分(11b ’)から引き切る
。以上の動作によってペレット(10)とリード(8)
との金線(11)による接合が終了する。
ところで、ボンディング用ワイヤ(5)としてはコスト
低減を図り金線(11)に代わってアルミニウム線が用
いられる傾向にある。ところが、アルミニウム線は耐湿
性が悪く、例えばペレット(10)とリード(8)とを
含む主要部の樹脂封止成形後、外装樹脂とリード(8)
との界面から侵入した水分によって腐食され、更にワイ
ヤ(5)から電極パッドを経てペレット(10)まで腐
食されることがあるため信頼性が低い。又、アルミニウ
ム線は金線に比べて導電率が劣るため同レベルの電流を
流そうとする場合、金線より大くしなければならない、
そのため、ICが高密度になって電極数がふえ電極間隔
が狭くなると、細いボンディング用ワイヤ(5)が要求
されアルミニウム線は不通である。
そこで、ごく最近になり上記問題点に鑑みて新たに銅細
線をボンディング用ワイヤに用いようとする動きがある
。この場合、銅は酸化し易いため、第10図に示すよう
に、ボンディング時にキャピラリ (4)の付近にノズ
ル(14)より不活性ガスを吹き付は銅細線(15)の
酸化を防いでいる。
1“    る   左 ところで、上述したように、ボンディング用ワイヤ(5
)として銅細線(15)を用いてポールボンディングを
行う場合、キャピラリ (4)に挿通した銅細線(15
)の先端を放電電極(12)等にて溶融して銅球(15
a)を形成すると、【第10図参照)銅は熱伝導率が大
きいため銅球(15a)が急に冷され、そのため金、ア
ルミニウムに比べ非常に硬くなる。このような銅球を第
11図に示すように、キャピラリ (4)の先端(4a
)にてペレット(10)の電極パッド(16)に押し付
けると、ペレット(10)や電極パッド(16)に過大
な応力が加わり、銅球(15a)がつぶれる前に電極パ
ッド(16)を破壊してペレット(10)にクランク(
17)を生じさせPN接合部分までクラック(17)が
達することがある。
又、通常、電極パッド(16)はアルミニウムで形成さ
れ数μm程度の厚さを持つ。そこで、上記の如く急二猾
後の銅球(15a)とアルミニウムとの間に硬度差があ
ると、銅球(15fl)を電極パッド(16)に押し付
けた場合、その部分で電極パッド(16)が押しつぶさ
れて薄くなったり、剥離し、オーミック接続が保たれな
(なる。
M1諺」jlししめ【ΔΔ工段 本発明は、キャピラリに挿通した銅細線の先端に溶融に
て銅球を形成しボールボンディングするようにした装置
において、上記銅細線の先端に銅球を形成する前後の一
定時間、銅細線先端部を高温雰囲気中に保持する加熱手
段を付加したことを特徴とする。
作置 キャピラリに挿通した銅細線先端部を銅球形成直前から
ボンディング終了まで高温雰囲気中に保持すると、銅球
が形成直後より高温に保たれ、冷却による硬化を抑える
ことが可能となる。
皇胤桝 本発明の一実施例を第1図を参照して以下説明する。第
10図と同一参照符号は同一物を示す。同図において、
(4)はキャピラリ、(6)はワイヤ送り機構、(7)
はペレットマウント部、(8)はリード、(10)はペ
レット、(13)は半田、(14)はノズル、(15)
はボンディング用銅細線、(15a)は銅球、(18)
は本発明に係る加熱器である。
ペレット(10)は半田(13)にてペレットマウント
部(7)にマウントされ、そのボンディング位置〔電極
バンド〕とリード(8)とに銅細線(15)をボンディ
ングする。銅細線(15)はワイヤ送り機構(6)から
送られてキャピラリ (4)に挿通され、先端に放電電
極〔図示せず〕による銅球(15a)を形成してボール
ボンディングされる。ノズル(14)は、銅の酸化を防
止する不活性ガスを銅細線(15)に吹き付けるもので
、銅細線(15)の先端付近に配する。
加熱器(18)はノズル(14)に付設されてその中を
流れる不活性ガスを加熱するもので、本発明の特徴部分
である。
上記構成に基づき本発明の動作を次に示す。
まず、ワイヤ送り機構(6)から送られキャピラリ (
4)に挿通した銅細線(15)の先端に放電電極等によ
る加熱・溶融にて銅球(15a)を形成する。この時、
銅細線(15)の酸化防止のためその先端付近にノズル
(14)より不活性ガスを吹き付けているが、銅球(1
5a)の形成直前から不活性ガスを加熱器(18)にて
加熱し銅細線(15)の先端付近を高温に保持する。そ
して、銅球(15a)の形成後もボンディング終了まで
銅球(15a)を高温に保持しておく。そうすると、銅
球(15a)は冷却による硬化が押えられる。そこで、
従来と同様、キャピラリ (4)の先端(4a)にて銅
球(15a)をペレット(10)の電極パッドに押し付
けてもアルミニウムの電極パッドとの硬度差が小さくな
るため銅球(15a)は電極パッドになじむように押し
つぶされ電極パッドの破壊や変形がなくなり、又、ペレ
ット(10)にクランク(17)も生じない。
監寒立肱来 本考案によれば、キャピラリに挿通した銅細線の先端に
溶融にて銅球を形成しボールボンディングするようにし
た装置において、銅球形成直前からボンディング終了ま
で、銅細線先端部を高温雰囲気中に保持するようにした
から、溶融によって形成された銅球の硬化が押えられ、
ポールボンディング時にボンディング面であるペレット
やその電極パッド等に破壊、変形及びクラ・ツク等が生
じない。
【図面の簡単な説明】
第1図は本考案に係るワイヤボンディング装置の一実施
例を示す要部側面図、第2図と第3図は従来のワイヤボ
ンディング装置の部分平面図と部分側面図、第4図乃至
第9図は超音波ボンディングによる電極間のワイヤボン
ディング工程を順に示す側面図、第10図は銅細線を用
いた従来のワイヤボンディング装置の部分側面図、第1
1図と第12図は従来の問題点の各説明図である。 (4)′−キャピラリ、(15) −銅細線、(15a
L−−・銅球、   (18)−加熱手段。 特 許 出 願 人  関西日本電気株式会社代   
 理    人  江  原  省  吾第4B

Claims (1)

    【特許請求の範囲】
  1. (1)キャピラリから導出された銅細線の先端部を溶融
    して銅球を形成しボールボンディングするようにした装
    置において、上記銅細線の先端部に銅球を形成する前後
    の一定時間、銅細線先端部を高温雰囲気中に保持する加
    熱手段付加したことを特徴とするワイヤボンディング装
    置。
JP61064467A 1986-03-22 1986-03-22 ワイヤボンデイング装置 Pending JPS62219935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61064467A JPS62219935A (ja) 1986-03-22 1986-03-22 ワイヤボンデイング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61064467A JPS62219935A (ja) 1986-03-22 1986-03-22 ワイヤボンデイング装置

Publications (1)

Publication Number Publication Date
JPS62219935A true JPS62219935A (ja) 1987-09-28

Family

ID=13259061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61064467A Pending JPS62219935A (ja) 1986-03-22 1986-03-22 ワイヤボンデイング装置

Country Status (1)

Country Link
JP (1) JPS62219935A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor

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