KR880004546A - 온도를 제어할 수 있는 진공처리장치 - Google Patents

온도를 제어할 수 있는 진공처리장치 Download PDF

Info

Publication number
KR880004546A
KR880004546A KR870009695A KR870009695A KR880004546A KR 880004546 A KR880004546 A KR 880004546A KR 870009695 A KR870009695 A KR 870009695A KR 870009695 A KR870009695 A KR 870009695A KR 880004546 A KR880004546 A KR 880004546A
Authority
KR
South Korea
Prior art keywords
electrode
vacuum processing
processing apparatus
electrostatic chuck
gas
Prior art date
Application number
KR870009695A
Other languages
English (en)
Other versions
KR910002451B1 (ko
Inventor
마사시 데즈카
Original Assignee
사이토 다이죠
가부시키가이샤 도쿠다세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사이토 다이죠, 가부시키가이샤 도쿠다세이사쿠쇼 filed Critical 사이토 다이죠
Publication of KR880004546A publication Critical patent/KR880004546A/ko
Application granted granted Critical
Publication of KR910002451B1 publication Critical patent/KR910002451B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Abstract

내용 없음

Description

온도를 제어할 수 있는 진공처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 진공처리장치의 1실시예를 나타낸 구성도.
제2도는 유전체막으로 피복된 전극구조를 나타낸 단면도.
제3도(a)는 전극구조의 다른 실시예를 나타낸 단면도.
제3도(b)는 제3도(a)의 횡단면

Claims (7)

  1. 온도가 제어되는 시료대(3)가 진공용기(1)내에 배치됨과 더불어 이 시료대의 위에는 피처리물(A)을 정전기전으로 흡착고정시켜주기 위한 정전기척용 전극(5)이 장착되고, 이 정전기척용 전극(5)은 그 전극판주위가 유전체막(4)으로 피복되어지면서 이를 관통해서 상기 전극에 흡착 고정되어지는 피처리물과 상기전극(5)의 접합면에 열전달을 양호하게 하기 위해 가스를 주입시켜주기 위한 가스도입관(15)이 설치된 온도를 제어할 수 있는 진공처리장치.
  2. 제1항에 있어서, 상기 정전기척용 전극(5)은 알루미늄으로 만들어진 전극 (5a)의 주위에 산화알루미늄(Al203)의 무기절연성 유전체막으로 피복되어진 것을 특징으로 하는 진공처리장치.
  3. 제1항에 있어서, 상기 정전기척용 전극(5)은 구리로 만들어진 전극(5b)의 주위에 폴리이미드 유기절연성 유전체막이 피복되어진 것을 특징으로 하는 진공처리장치.
  4. 제1항에 있어서, 상기 정전기척용 전극(5)은 진공처리실의 천정벽의 아래면에 장착되어지는 것을 특징으로 하는 진공처리장치.
  5. 제1항에 있어서, 상기 정전기척용 전극(5)은 진공처리실의 측벽면에 장착된 것을 특징으로 하는 진공 처리장치.
  6. 제1항에 있어서, 상기 시료대(3)에는 히터(20)가 내장된 것을 특징으로 하는 진공처리장치.
  7. 제1항에 있어서, 상기 가스도입관(15)에 유입되어지는 가스는 열전달을 양호하게하기 위한 냉각가스가 사용되는 것을 특징으로 하는 진공처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 수록하지 않았음
KR1019870009695A 1986-09-12 1987-09-02 온도제어가능 진공처리장치 KR910002451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61215333A JPS6372877A (ja) 1986-09-12 1986-09-12 真空処理装置
JP215333 1986-09-12

Publications (2)

Publication Number Publication Date
KR880004546A true KR880004546A (ko) 1988-06-04
KR910002451B1 KR910002451B1 (ko) 1991-04-22

Family

ID=16670558

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009695A KR910002451B1 (ko) 1986-09-12 1987-09-02 온도제어가능 진공처리장치

Country Status (4)

Country Link
US (1) US4771730A (ko)
EP (1) EP0260150A3 (ko)
JP (1) JPS6372877A (ko)
KR (1) KR910002451B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960030365A (ko) * 1995-01-31 1996-08-17 제임스 조셉 드롱 고온용 폴리이미드 정전기 척

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JP2512783B2 (ja) * 1988-04-20 1996-07-03 株式会社日立製作所 プラズマエッチング方法及び装置
JP2748127B2 (ja) * 1988-09-02 1998-05-06 キヤノン株式会社 ウエハ保持方法
JPH02135753A (ja) * 1988-11-16 1990-05-24 Sumitomo Metal Ind Ltd 試料保持装置
JP2846890B2 (ja) * 1989-04-11 1999-01-13 株式会社日立製作所 表面処理方法および装置
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
JP2874186B2 (ja) * 1989-05-23 1999-03-24 ソニー株式会社 低温処理装置
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor
US5044211A (en) * 1989-07-28 1991-09-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for determining the effects of oxygen plasma on a specimen
DE69033002T2 (de) * 1989-10-02 1999-09-02 Canon Kk Belichtungsvorrichtung
JP2927857B2 (ja) * 1990-01-19 1999-07-28 株式会社東芝 基板加熱装置
FR2661039B1 (fr) * 1990-04-12 1997-04-30 Commissariat Energie Atomique Porte-substrat electrostatique.
US5673750A (en) * 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
KR0157990B1 (ko) * 1990-06-18 1999-02-01 이노우에 키요시 처리 장치
EP0779648A3 (en) * 1990-07-02 1997-07-23 Hitachi, Ltd. Vacuum processing method and apparatus
KR0165898B1 (ko) * 1990-07-02 1999-02-01 미다 가쓰시게 진공처리방법 및 장치
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
TW221318B (ko) * 1990-07-31 1994-02-21 Tokyo Electron Co Ltd
JPH06103683B2 (ja) * 1990-08-07 1994-12-14 株式会社東芝 静電吸着方法
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
DE69130205T2 (de) * 1990-12-25 1999-03-25 Ngk Insulators Ltd Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
JPH04348031A (ja) * 1990-12-28 1992-12-03 Mitsubishi Electric Corp 化学気相成長装置
EP1120817B8 (en) * 1991-03-26 2007-10-10 Ngk Insulators, Ltd. Use of a corrosion-resistant member
JPH06737A (ja) * 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US6146135A (en) * 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method
WO1993004210A1 (en) * 1991-08-19 1993-03-04 Tadahiro Ohmi Method for forming oxide film
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH05166757A (ja) * 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
US5686050A (en) * 1992-10-09 1997-11-11 The University Of Tennessee Research Corporation Method and apparatus for the electrostatic charging of a web or film
JPH06158361A (ja) * 1992-11-20 1994-06-07 Hitachi Ltd プラズマ処理装置
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
JPH06204157A (ja) * 1992-12-25 1994-07-22 Tokyo Electron Tohoku Ltd 縦型熱処理装置
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5938854A (en) * 1993-05-28 1999-08-17 The University Of Tennessee Research Corporation Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
US5387842A (en) * 1993-05-28 1995-02-07 The University Of Tennessee Research Corp. Steady-state, glow discharge plasma
US5669583A (en) * 1994-06-06 1997-09-23 University Of Tennessee Research Corporation Method and apparatus for covering bodies with a uniform glow discharge plasma and applications thereof
US5625526A (en) * 1993-06-01 1997-04-29 Tokyo Electron Limited Electrostatic chuck
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
EP0635870A1 (en) * 1993-07-20 1995-01-25 Applied Materials, Inc. An electrostatic chuck having a grooved surface
JPH0786247A (ja) * 1993-09-16 1995-03-31 Hitachi Ltd 減圧雰囲気内における被処理物の処理方法及び処理装置
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
US5484485A (en) * 1993-10-29 1996-01-16 Chapman; Robert A. Plasma reactor with magnet for protecting an electrostatic chuck from the plasma
JP3257741B2 (ja) * 1994-03-03 2002-02-18 東京エレクトロン株式会社 プラズマエッチング装置及び方法
US6278600B1 (en) 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5801915A (en) * 1994-01-31 1998-09-01 Applied Materials, Inc. Electrostatic chuck having a unidirectionally conducting coupler layer
US5486975A (en) * 1994-01-31 1996-01-23 Applied Materials, Inc. Corrosion resistant electrostatic chuck
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
WO1995020838A1 (en) * 1994-01-31 1995-08-03 Applied Materials, Inc. Electrostatic chuck with conformal insulator film
US5631803A (en) * 1995-01-06 1997-05-20 Applied Materials, Inc. Erosion resistant electrostatic chuck with improved cooling system
DE69500566T2 (de) * 1994-02-28 1998-01-29 Applied Materials Inc Elektrostatische Halteplatte
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
US5606485A (en) * 1994-07-18 1997-02-25 Applied Materials, Inc. Electrostatic chuck having improved erosion resistance
US5592358A (en) * 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
US5595241A (en) * 1994-10-07 1997-01-21 Sony Corporation Wafer heating chuck with dual zone backplane heating and segmented clamping member
US5528451A (en) * 1994-11-02 1996-06-18 Applied Materials, Inc Erosion resistant electrostatic chuck
US5982986A (en) * 1995-02-03 1999-11-09 Applied Materials, Inc. Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US5955174A (en) * 1995-03-28 1999-09-21 The University Of Tennessee Research Corporation Composite of pleated and nonwoven webs
US5605603A (en) * 1995-03-29 1997-02-25 International Business Machines Corporation Deep trench process
JPH08274150A (ja) * 1995-03-31 1996-10-18 Nec Corp 静電吸着ステージ
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
EP0801809A2 (en) 1995-06-19 1997-10-22 The University Of Tennessee Research Corporation Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
KR19980018986A (ko) * 1996-08-26 1998-06-05 조셉 제이. 스위니 정전기 척을 사용하여 제품을 냉각하기 위한 방법 및 장치(method and apparatus for cooling a workpiece using an electrostatic chuck)
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US6033478A (en) * 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
AU5461998A (en) 1996-11-27 1998-06-22 Emcore Corporation Chemical vapor deposition apparatus
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer
US6055927A (en) 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
KR100290264B1 (ko) * 1997-01-22 2001-09-22 호소이 쇼지로 정전처크장치 및 그 제조방법
US5870271A (en) * 1997-02-19 1999-02-09 Applied Materials, Inc. Pressure actuated sealing diaphragm for chucks
JPH10240356A (ja) 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
US5879461A (en) * 1997-04-21 1999-03-09 Brooks Automation, Inc. Metered gas control in a substrate processing apparatus
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US5978202A (en) * 1997-06-27 1999-11-02 Applied Materials, Inc. Electrostatic chuck having a thermal transfer regulator pad
KR100291585B1 (ko) * 1997-07-25 2001-11-30 윤종용 반도체장치의금속막식각방법
US6014082A (en) * 1997-10-03 2000-01-11 Sony Corporation Temperature monitoring and calibration system for control of a heated CVD chuck
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
JPH11260897A (ja) 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd 基板の取り扱い方法と装置、それに用いる吸着検査方法、装置
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6104596A (en) * 1998-04-21 2000-08-15 Applied Materials, Inc. Apparatus for retaining a subtrate in a semiconductor wafer processing system and a method of fabricating same
JP3453069B2 (ja) * 1998-08-20 2003-10-06 東京エレクトロン株式会社 基板温調装置
US6302057B1 (en) 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
KR100408259B1 (ko) * 1998-11-04 2004-01-24 엘지.필립스 엘시디 주식회사 공정챔버_
US6259592B1 (en) * 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
JP3846092B2 (ja) 1999-02-24 2006-11-15 松下電器産業株式会社 プラズマ処理装置および方法
US6094334A (en) * 1999-03-02 2000-07-25 Applied Materials, Inc. Polymer chuck with heater and method of manufacture
US6273958B2 (en) 1999-06-09 2001-08-14 Applied Materials, Inc. Substrate support for plasma processing
JP2001068538A (ja) * 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6373679B1 (en) 1999-07-02 2002-04-16 Cypress Semiconductor Corp. Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
AU1786301A (en) * 1999-12-02 2001-06-12 Tegal Corporation Improved reactor with heated and textured electrodes and surfaces
US6478924B1 (en) 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
GB2366797A (en) * 2000-09-13 2002-03-20 Procter & Gamble Process for making foam component by pressurising/depressurising
US6439244B1 (en) * 2000-10-13 2002-08-27 Promos Technologies, Inc. Pedestal design for a sputter clean chamber to improve aluminum gap filling ability
CA2424447C (en) 2000-10-27 2009-12-22 The Procter & Gamble Company Stabilized liquid compositions
JP2002313781A (ja) * 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
US6899170B2 (en) 2001-11-15 2005-05-31 William J. Biter Electrostatic switched radiator for space based thermal control
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
US6908512B2 (en) * 2002-09-20 2005-06-21 Blue29, Llc Temperature-controlled substrate holder for processing in fluids
JP4186644B2 (ja) 2003-02-17 2008-11-26 株式会社Ｉｈｉ 真空処理装置の冷却装置
US6811662B1 (en) * 2003-08-22 2004-11-02 Powership Semiconductor Corp. Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TW200532043A (en) * 2004-02-10 2005-10-01 Ulvac Inc Thin film forming apparatus
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
DE102004031528B4 (de) * 2004-06-29 2007-05-03 Von Ardenne Anlagentechnik Gmbh Vorrichtung zur Bereitstellung einer Sonderatmosphäre mit einem Medienanschluss
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
JP3960332B2 (ja) * 2004-11-29 2007-08-15 セイコーエプソン株式会社 減圧乾燥装置
US20070029046A1 (en) * 2005-08-04 2007-02-08 Applied Materials, Inc. Methods and systems for increasing substrate temperature in plasma reactors
KR101098858B1 (ko) * 2006-05-15 2011-12-26 울박, 인크 클리닝 방법 및 진공 처리 장치
US8500963B2 (en) * 2006-10-26 2013-08-06 Applied Materials, Inc. Sputtering of thermally resistive materials including metal chalcogenides
DE102008026001B4 (de) * 2007-09-04 2012-02-16 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Erzeugung und Bearbeitung von Schichten auf Substraten unter definierter Prozessatmosphäre und Heizelement
JP5416570B2 (ja) * 2009-12-15 2014-02-12 住友電気工業株式会社 加熱冷却デバイスおよびそれを搭載した装置
JP2012089591A (ja) * 2010-10-18 2012-05-10 Hitachi High-Technologies Corp 真空処理装置及び真空処理方法
US9673037B2 (en) 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
US8898928B2 (en) * 2012-10-11 2014-12-02 Lam Research Corporation Delamination drying apparatus and method
CN108474111A (zh) * 2015-12-29 2018-08-31 康宁股份有限公司 真空涂覆工艺中的盖板玻璃基材的静电夹持
JP6723660B2 (ja) 2017-03-24 2020-07-15 住友重機械イオンテクノロジー株式会社 ウェハ保持装置及びウェハ着脱方法
US10497667B2 (en) * 2017-09-26 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for bond wave propagation control

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756815A (en) * 1979-12-21 1988-07-12 Varian Associates, Inc. Wafer coating system
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
DE100206T1 (de) * 1982-07-22 1985-02-14 Oerlikon-Buhrle U.S.A. Inc., New York, N.Y. Vorrichtung zum behandeln eines gegenstandes in einer vakuumkammer.
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960030365A (ko) * 1995-01-31 1996-08-17 제임스 조셉 드롱 고온용 폴리이미드 정전기 척

Also Published As

Publication number Publication date
US4771730A (en) 1988-09-20
EP0260150A3 (en) 1990-06-06
EP0260150A2 (en) 1988-03-16
KR910002451B1 (ko) 1991-04-22
JPS6372877A (ja) 1988-04-02

Similar Documents

Publication Publication Date Title
KR880004546A (ko) 온도를 제어할 수 있는 진공처리장치
KR920020647A (ko) 플라즈마 처리장치
DE69625974D1 (de) Verfahren und Struktur zur Verbesserung der Flüssigkeitsströmung für Wärmetransport in elektrostatische Halter
US4430547A (en) Cleaning device for a plasma etching system
KR920003430A (ko) 진공처리방법 및 장치
KR890001157A (ko) 웨이퍼 표면처리 장치
JPH088194A (ja) 気相成長機構および熱処理機構における加熱装置
KR900001280A (ko) 플라즈마 장치
SE7609244L (sv) Elektriskt isolerad genomforing
KR900007925A (ko) 고온 반응 처리 방법
JPS5633886A (en) Light drive semiconductor device
KR970015757A (ko) 고진공 소결 및 열처리장치
JPS63114118A (ja) 薄膜加工用圧着ヒ−タ支持装置
JPS60175424A (ja) プラズマ処理装置
JPS5766642A (en) Plasma etching device
JPS5498178A (en) Electronic device
JPS6437056A (en) Semiconductor device
JPS57161067A (en) Dry etching method for aluminum film
JPS60181367U (ja) プラズマ処理装置
KR930019859A (ko) 화학기상 증착장치
JPH04236093A (ja) 加熱炉の炉壁
JPS6433004A (en) Ozonizer
JPS596837U (ja) 薄膜の形成装置
KR970000442Y1 (ko) 플라즈마(Plasma)반응관의 시료 흔들림 방지장치
JPH056654Y2 (ko)

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060324

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee