KR900001280A - 플라즈마 장치 - Google Patents

플라즈마 장치 Download PDF

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Publication number
KR900001280A
KR900001280A KR1019880007307A KR880007307A KR900001280A KR 900001280 A KR900001280 A KR 900001280A KR 1019880007307 A KR1019880007307 A KR 1019880007307A KR 880007307 A KR880007307 A KR 880007307A KR 900001280 A KR900001280 A KR 900001280A
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KR
South Korea
Prior art keywords
sample
plasma
chamber
pair
chambers
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Application number
KR1019880007307A
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English (en)
Other versions
KR920006263B1 (ko
Inventor
다다시 미야무라
시게오 스가와라
Original Assignee
신구 야수오
스미도모 긴소꾸 고오교오 가부시기가이샤
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Application filed by 신구 야수오, 스미도모 긴소꾸 고오교오 가부시기가이샤 filed Critical 신구 야수오
Publication of KR900001280A publication Critical patent/KR900001280A/ko
Application granted granted Critical
Publication of KR920006263B1 publication Critical patent/KR920006263B1/ko

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    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

내용 없음.

Description

플라즈마 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 프라즈마 장치에 한 종 단면도.
제2도는 본 발명의 관한 플라즈마 장치의 실시예에 대한 종 단면도.
제3도는 카세트의 부분 절단면도.

Claims (5)

  1. 마이크로파를 이용하는 전자 사이클로트론 공명 발생에 의한 플라즈마 생성을 위한 한 쌍의 플라즈마생성실(1)과, 서로 마주보는 전기한 플라즈마 생성실(1)과 함께 양 측면에 설치되고 있고, 양 측면벽의 접하는 위치에 전기한 플라즈마 생성실(1)에 접하는 플라즈마 인출창(1d)과 함께 설치되어 있는 시료실과, 전기한 시료실 내에 배치되어 있고 서로 역 방향을 하며, 각각 전기한 플라즈마 인출창(1d)과 대향하는 한쌍의 시료대(9)로 구성되어 있는 것을 특징으로 하는 플라즈마 장치.
  2. 제1항에 있어서, 전기한 플라즈마 인출상(1d)과 대향하고 있지 않은 전기한 시료실의 한쪽 측면 벽에 설치된 연결 도관을 통하여 전기한 시료실과 연결되며, 각 전기한 시료대에 공급될 다수의 시료(S)를 포함하기 위한 장치가 안에 설치되어 있는 부하 고정실(5)로 구성되어 있는 것을 특징으로 하는 플라즈마장치.
  3. 제2항에 있어서, 전기한 시료실은 전기한 부하 고정실(5)로 부터 공급된 시료(S)를 지지하고, 전기한 각 시료대(9)에 전기한 시료(S)를 운반하기 위한 제1차 운반장치로 구성되어 있는 것을 특징으로 하는 플라즈마 장치.
  4. 제1항에 있어서, 전기한 각 시료대(9)는 정전기 유도에 의한 전기한 시료(S)를 고정하기 위한 지지장치와, 냉각수를 이용하여 전기한 시료를 냉각하기 위한 냉각 장치와, 전기한 시료(S)를 가열하기 위한 가열 장치를 구성되어 있는 것을 특징으로 하는 플라즈마 장치.
  5. 제3항에 있어서, 전기한 부하 고정실(5)은 전기한 다수의 시료(S)를 그 안에 포함하고, 전기한 한쌍의 시료대(9)와 각각 연결되는 한 쌍의 카세트(6)와 전기한 함유된 시료(S)의 각 간격에 전기한 카세트(6)가 동시에 움직이게 하는 이동 장치와, 전기한 각 카세트(6)와 전기한 제1항 운반 장치사이로 전기한 시료(S)를 전달하기 위한 제2운반 장치로 구성되어 있는 것을 특징으로 하는 플라즈마 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880007307A 1987-03-30 1988-06-17 플라즈마 장치 KR920006263B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP???62-78776 1987-03-30
JP62078776A JPS63244619A (ja) 1987-03-30 1987-03-30 プラズマ装置

Publications (2)

Publication Number Publication Date
KR900001280A true KR900001280A (ko) 1990-01-31
KR920006263B1 KR920006263B1 (ko) 1992-08-01

Family

ID=13671303

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880007307A KR920006263B1 (ko) 1987-03-30 1988-06-17 플라즈마 장치

Country Status (5)

Country Link
US (1) US4902934A (ko)
EP (1) EP0342279B1 (ko)
JP (1) JPS63244619A (ko)
KR (1) KR920006263B1 (ko)
DE (1) DE3870445D1 (ko)

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JPH01134927A (ja) * 1987-11-20 1989-05-26 Nippon Telegr & Teleph Corp <Ntt> プラズマ処理装置
US5227695A (en) * 1989-06-05 1993-07-13 Centre National De La Recherche Scientifique Device for coupling microwave energy with an exciter and for distributing it therealong for the purpose of producing a plasma
JP2644912B2 (ja) * 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
US7089680B1 (en) 1990-08-29 2006-08-15 Hitachi, Ltd. Vacuum processing apparatus and operating method therefor
USRE39756E1 (en) * 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USRE39823E1 (en) * 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
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JP2532401Y2 (ja) * 1991-04-16 1997-04-16 ソニー株式会社 バイアスｅｃｒプラズマｃｖｄ装置
ATE127615T1 (de) * 1991-05-21 1995-09-15 Materials Research Corp Sanftaetz-einheit fuer modulare bearbeitungsanlagen und ecr-plasmaerzeuger fuer eine solche einheit.
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
US5343885A (en) * 1992-03-04 1994-09-06 Baxter International Inc. Vacuum air lock for a closed perimeter solvent conservation system
JP3194022B2 (ja) * 1992-07-06 2001-07-30 東京エレクトロン株式会社 プラズマ表面処理の制御装置
US5352487A (en) * 1992-08-31 1994-10-04 Gte Products Corporation Process for the formation of SiO2 films
DE4310258A1 (de) * 1993-03-30 1994-10-06 Bosch Gmbh Robert Vorrichtung zur Herstellung einer Plasmapolymerschutzschicht auf Werkstücken, insbesondere Scheinwerferreflektoren
USRE39353E1 (en) * 1994-07-21 2006-10-17 Applera Corporation Mass spectrometer system and method for matrix-assisted laser desorption measurements
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EP1209721B1 (en) * 1997-10-10 2007-12-05 European Community Inductive type plasma processing chamber
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Also Published As

Publication number Publication date
EP0342279A1 (en) 1989-11-23
JPS63244619A (ja) 1988-10-12
US4902934A (en) 1990-02-20
EP0342279B1 (en) 1992-04-22
DE3870445D1 (de) 1992-05-27
KR920006263B1 (ko) 1992-08-01

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