KR850000901A - 마이크로파 프라즈마 처리방법 및 그 장치 - Google Patents

마이크로파 프라즈마 처리방법 및 그 장치 Download PDF

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Publication number
KR850000901A
KR850000901A KR1019840003648A KR840003648A KR850000901A KR 850000901 A KR850000901 A KR 850000901A KR 1019840003648 A KR1019840003648 A KR 1019840003648A KR 840003648 A KR840003648 A KR 840003648A KR 850000901 A KR850000901 A KR 850000901A
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South Korea
Prior art keywords
plasma
waveguide
shielding means
processing chamber
microwave plasma
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KR1019840003648A
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KR890002732B1 (ko
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슈조 후지무라 (외 1)
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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Publication of KR890002732B1 publication Critical patent/KR890002732B1/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
    • G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음.

Description

마이크로파 프라즈마 처리방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 엣치턴넬형 고주파 프라즈마 엣칭장치의 도해 단면도.
제2도는 엣치턴넬형 마이크로파 프라즈마 처리장치의 도해 단면도.
제8도는 본 발명의 구성을 가지는 마이크로파 프라즈마 처리장치에 있어서, 다른 일실시예의 도해 단면도.

Claims (6)

  1. 도파관내의 프라즈마 발생부에 있어서, 도파관내를 전파하는 마이크로파에 의해서 활성화된 반응가스를 프라즈마의 누설을 저지하고 또한 활성종의 통과를 허용하여 얻는 것과 같은 프라즈마 차폐(遮蔽)수단을 거쳐서 처리실내에 도입하고, 상기 처리실내에서의 프라즈마 차폐수단의 근방영역에 배치한 피가공물을 상기 프라즈마 차폐수단을 통과해서 온활성종에 의하여 가공처리하는 것을 특징으로 하는 마이크로파 프라즈마 처리방법.
  2. 마이크로파를 전파하며, 또한 마이크로파에 의해서 프라즈마를 내부에서 발생하는 도파관과, 상기 도파관의 관벽에 설치하고, 또한, 프라즈마의 누설을 저지함과 동시에 활성종의 통과를 허용하여 얻는 것같은 프라즈마 차폐수단과 상기 프라즈마 차폐수단을 거쳐서 도파관을 연통(連通)하는 가공처리실을 가지며, 피가공물이 상기 가공처리실내에서 프라즈마 차폐수단의 근방영역에 배치되는 것을 특징으로 하는 마이크로파 프라즈마 처리장치.
  3. 제2항에서, 상기 도파관의 일단부에 다미부하를 설치하는 것을 특징으로 하는 마이크로파 프라즈마 지리장치.
  4. 제2항 또는 제3항에서, 상기 도파관의 프라즈마가 발생하는 부분에 있어서, 전장(電場)방향의 길이가 상기 도파관의 다른 부분의 전장방향의 길이보다 짧은 것을 특징으로 하는 마이크로파 프라즈마 처리장치.
  5. 제2항, 제3항 또는 제4항에서, 상기 프라즈마 차폐수단은 도파관의 관벽에 형성된 세공(細孔)을 포함하는 것을 특징으로 하는 마이크로파 프라즈마 처리장치.
  6. 제2항, 제3항 또는 제4항에서, 상기 프라즈마 차폐수단이 금망(金網)으로 되어 있는 것을 특징으로 하는 마이크로파 프라즈마 처리장치.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019840003648A 1983-07-08 1984-06-27 마이크로파 프라즈마 처리방법 및 그 장치 KR890002732B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58-124511 1983-07-08
JP58124511A JPS6016424A (ja) 1983-07-08 1983-07-08 マイクロ波プラズマ処理方法及びその装置
JP124511 1986-08-12

Publications (2)

Publication Number Publication Date
KR850000901A true KR850000901A (ko) 1985-03-09
KR890002732B1 KR890002732B1 (ko) 1989-07-25

Family

ID=14887295

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KR1019840003648A KR890002732B1 (ko) 1983-07-08 1984-06-27 마이크로파 프라즈마 처리방법 및 그 장치

Country Status (5)

Country Link
US (1) US4512868A (ko)
EP (1) EP0131433B1 (ko)
JP (1) JPS6016424A (ko)
KR (1) KR890002732B1 (ko)
DE (1) DE3483184D1 (ko)

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Also Published As

Publication number Publication date
US4512868A (en) 1985-04-23
EP0131433B1 (en) 1990-09-12
EP0131433A3 (en) 1986-05-14
EP0131433A2 (en) 1985-01-16
JPH055167B2 (ko) 1993-01-21
KR890002732B1 (ko) 1989-07-25
JPS6016424A (ja) 1985-01-28
DE3483184D1 (de) 1990-10-18

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