KR970067593A - 기판처리장치 - Google Patents

기판처리장치 Download PDF

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Publication number
KR970067593A
KR970067593A KR1019960054782A KR19960054782A KR970067593A KR 970067593 A KR970067593 A KR 970067593A KR 1019960054782 A KR1019960054782 A KR 1019960054782A KR 19960054782 A KR19960054782 A KR 19960054782A KR 970067593 A KR970067593 A KR 970067593A
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KR
South Korea
Prior art keywords
substrate
members
purge gas
processing apparatus
substrate processing
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KR1019960054782A
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English (en)
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KR100269579B1 (ko
Inventor
시게루 미즈노
마사히토 이시하라
가즈토 와타나베
노부유키 다카하시
Original Assignee
니시히라 슌지
아네루바 가부시키가이샤
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Publication of KR970067593A publication Critical patent/KR970067593A/ko
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Publication of KR100269579B1 publication Critical patent/KR100269579B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

열변형이 생기기 어렵고 블록히터의 온도분포를 개선하여 생산성을 향상시킨 기판처리장치를 제공한다.
배기부(12)를 구비하고 기판(14)을 표면처리하기 위한 진공환경이 만들어지는 반응용기(11), 반응용기내에 설치되는 유지체(51), 및 반응용기에 도입하는 가스도입수단(21,22)을 구비하고, 덩구이 기판 유지체는 블록히터(56)를 포함한다. 블록히터는 상부부재(52)와 중간부재(53)와 하부부재(54)를 포개어 맞추어 이들 사이의 접촉면을 확산접합에 의하여 접합함과 동시에, 중간부재와 하부부재 사이에 발열부(55)를 설치하고, 중간부재와 상부부재 사이에 퍼지가스통로(70,71)를 형성하도록 구성된다.

Description

기판처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 바람직한 실시형태에 관한 기판처리장치의 종단면도이다.

Claims (9)

  1. 내부를 진동으로 배기하기 위한 배기부를 구비하고, 기판을 표면처리하기 위한 진공환경이 만들어지는 반응용기, 상기 반응용기의 내부에 설치되고, 상기 기판을 얹어놓는 기판 유지체, 및 상기 표면처리에 사용되는 반응가스를 상기 반응용기에 도입하는 가스도입수단을 구비하고, 상기 기판 유지체는 상기 기판을 일정한 온도로 유지하기 위한 블록히터를 포함하는 기판처리장치에 있어서, 상기 블록히터는 적어도 2개의 부재를 포개어 맞추어 이들 사이의 접촉면을 확산접합함에 의하여 일체화되어 있음과 동시에, 상기 2개의 부재 사이에 발열부를 설치한 것을 특징으로 하는 기판 처리장치.
  2. 제1항에 있어서, 상기 2개의 부재의 접합면의 적어도 한쪽에 상기 발열부를 메워넣기 위한 홈이 형성되는 것을 특징으로 하는 기판 처리장치.
  3. 제1항에 있어서, 상기 적어도 2개의 부재의 접합면에 퍼지가스통로로서의 홈을 형성하고, 두께방향으로 상기 2개의 부재에 퍼지가스통로로서의 관통구멍을 형성하고, 상기의 적어도 2개의 부재중 상기 기판이 배치되는 상기 부재의 외측면에 퍼지가스가 공급되는 경로가 형성되는 것을 특징으로 하는 기판 처리장치.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 상기 기판을 고정하기 위한 정전흡착기구가 상기 블록히터상에 설치되는 것을 특징으로 하는 기판 처리장치.
  5. 제1항에 있어서, 상기 적어도 2개의 부재는 상부부재와 중간부재와 하부부재이고, 상기 상부부재와 중간부재와 하부부재를 포개어 맞추어 이들 사이의 접촉면을 확산접합에 의하여 접합함과 동시에, 상기 중간부재와 상기 하부부재 사이에 발열부를 설치한 것을 특징으로 하는 기판 처리장치.
  6. 제5항에 있어서, 상기 중간부재와 상기 상부부재 사이에 퍼지가스통로를 형성한 것을 특징으로 하는 기판 처리장치.
  7. 제5항에 있어서, 상기 중간부재와 상기 하부부재의 접합면의 적어도 한쪽에 상기 발열부를 메워넣기 위한 홈이 형성되는 것을 특징으로 하는 기판 처리장치.
  8. 제6항에 있어서, 상기 중간부재와 상기 상부부재의 접합면의 어느 한쪽에 홈을 형성하여 상기 퍼지가스통로로하고, 상기 상부부재와 중간부재와 하부부재 중 적어도 어느 하나에 두께방향으로 퍼지가스통로로서의 관통구멍을 형성하고, 상기 상부부재의 외측면에 퍼지가스가 공급되는 경로가 형성되는 것을 특징으로 하는 기판 처리장치.
  9. 제5항 내지 제8항 중 어느 한 항에 있어서, 상기 기판을 고정하기 위한 정전흡착기구가 상기 블록히터상에 설치되는 것을 특징으로 하는 기판 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960054782A 1996-03-15 1996-11-18 기판처리장치 KR100269579B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-87468 1996-03-15
JP8087468A JPH09256153A (ja) 1996-03-15 1996-03-15 基板処理装置

Publications (2)

Publication Number Publication Date
KR970067593A true KR970067593A (ko) 1997-10-13
KR100269579B1 KR100269579B1 (ko) 2000-10-16

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US (1) US6129046A (ko)
JP (1) JPH09256153A (ko)
KR (1) KR100269579B1 (ko)
TW (1) TW350879B (ko)

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JP3492325B2 (ja) 2000-03-06 2004-02-03 キヤノン株式会社 画像表示装置の製造方法
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US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
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JP4590364B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 処理装置
US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
JP5660753B2 (ja) * 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
JP2009084686A (ja) * 2007-09-11 2009-04-23 Tokyo Electron Ltd 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
JP4816616B2 (ja) * 2007-10-15 2011-11-16 東京エレクトロン株式会社 ガスシャワーヘッド、処理装置、処理方法及び処理装置のメンテナンス方法
JP5083193B2 (ja) * 2008-12-12 2012-11-28 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
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JP5392069B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
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KR102102035B1 (ko) * 2018-02-21 2020-04-20 주식회사 메카로 고온 시즈히터 및 이를 구비한 히터블럭의 제조방법
CN111448647B (zh) * 2018-03-26 2023-08-01 日本碍子株式会社 静电卡盘加热器
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Also Published As

Publication number Publication date
KR100269579B1 (ko) 2000-10-16
JPH09256153A (ja) 1997-09-30
US6129046A (en) 2000-10-10
TW350879B (en) 1999-01-21

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