KR890013729A - 반응성 이온 에칭장치 - Google Patents

반응성 이온 에칭장치 Download PDF

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Publication number
KR890013729A
KR890013729A KR1019890001465A KR890001465A KR890013729A KR 890013729 A KR890013729 A KR 890013729A KR 1019890001465 A KR1019890001465 A KR 1019890001465A KR 890001465 A KR890001465 A KR 890001465A KR 890013729 A KR890013729 A KR 890013729A
Authority
KR
South Korea
Prior art keywords
reactive ion
ion etching
etching equipment
etching apparatus
cathode
Prior art date
Application number
KR1019890001465A
Other languages
English (en)
Inventor
미쯔노부 고시바
게이이찌 야마다
요시유기 하리다
신이찌 가와무라
유지 후루도
Original Assignee
아사구라 다쓰오
니흔 고오세이 고무 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아사구라 다쓰오, 니흔 고오세이 고무 가부시끼가이샤 filed Critical 아사구라 다쓰오
Publication of KR890013729A publication Critical patent/KR890013729A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음.

Description

반응성 이온 에칭장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제2도 및 제3도는 각각 본 발명의 반응성 이온 에칭 장치의 음극의 일예를 도시하는 사시도, 단면도 및 평면도.

Claims (1)

  1. 피 에칭제의 표면에 대해서 평행한 자장을 형성하는 수단을 갖는 반응성 이온 에칭 장치에 있어서, 음극과, 상기 음극에 배설되어, 상기 피 에칭재를 지지하는 지지수단과, 상기 음극을 0℃ 이하로 냉각하는 수단과를 구비한 것을 특징으로 하는 반응성 이온 에칭장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001465A 1988-02-10 1989-02-09 반응성 이온 에칭장치 KR890013729A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2765788 1988-02-10
JP63-27657 1988-02-10
JP63-292518 1988-11-21
JP63292518A JPH01302726A (ja) 1988-02-10 1988-11-21 反応性イオンエッチング装置

Publications (1)

Publication Number Publication Date
KR890013729A true KR890013729A (ko) 1989-09-25

Family

ID=26365613

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001465A KR890013729A (ko) 1988-02-10 1989-02-09 반응성 이온 에칭장치

Country Status (4)

Country Link
US (1) US4886565A (ko)
EP (1) EP0328078A3 (ko)
JP (1) JPH01302726A (ko)
KR (1) KR890013729A (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223113A (en) * 1990-07-20 1993-06-29 Tokyo Electron Limited Apparatus for forming reduced pressure and for processing object
EP0491503A3 (en) * 1990-12-19 1992-07-22 AT&T Corp. Method for depositing metal
FR2677043B1 (fr) * 1991-05-29 1993-12-24 Solems Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.
US5221425A (en) * 1991-08-21 1993-06-22 International Business Machines Corporation Method for reducing foreign matter on a wafer etched in a reactive ion etching process
EP0533254A3 (en) * 1991-09-19 1993-06-23 N.V. Philips' Gloeilampenfabrieken Method of manufacturing a semiconductor device whereby a layer comprising aluminium is deposited on a surface for a semiconductor body
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
US5433786A (en) * 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
US5605603A (en) * 1995-03-29 1997-02-25 International Business Machines Corporation Deep trench process
US5993598A (en) * 1996-07-30 1999-11-30 The Dow Chemical Company Magnetron
US5900284A (en) * 1996-07-30 1999-05-04 The Dow Chemical Company Plasma generating device and method
US6303045B1 (en) * 1997-03-20 2001-10-16 Lam Research Corporation Methods and apparatus for etching a nitride layer in a variable-gap plasma processing chamber
US6110395A (en) * 1997-08-26 2000-08-29 Trikon Technologies, Inc. Method and structure for controlling plasma uniformity
US6055929A (en) * 1997-09-24 2000-05-02 The Dow Chemical Company Magnetron
US6540928B1 (en) 1999-09-10 2003-04-01 Unaxis Usa Inc. Magnetic pole fabrication process and device
US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US20040110388A1 (en) * 2002-12-06 2004-06-10 International Business Machines Corporation Apparatus and method for shielding a wafer from charged particles during plasma etching
US20070204957A1 (en) * 2006-03-01 2007-09-06 Braymen Steven D Plasma processing of large workpieces
US20100209623A1 (en) * 2009-02-18 2010-08-19 Electronics And Telecommunications Research Institute Apparatus for growing large area vanadium dioxide thin film and method of growing large area oxide thin film in the apparatus
KR101275805B1 (ko) * 2009-02-18 2013-06-18 한국전자통신연구원 대면적 바나듐 산화물 박막 성장장치 및 그 성장장치에서의 대면적 산화물 박막 성장방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054201B1 (en) * 1980-12-11 1986-11-05 Kabushiki Kaisha Toshiba Dry etching device and method
US4422896A (en) * 1982-01-26 1983-12-27 Materials Research Corporation Magnetically enhanced plasma process and apparatus
JPS58170016A (ja) * 1982-03-31 1983-10-06 Tokuda Seisakusho Ltd プラズマエツチング装置
JPS5940375A (ja) * 1982-08-31 1984-03-06 Toshiba Corp デイスクレコ−ド再生装置
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置

Also Published As

Publication number Publication date
EP0328078A2 (en) 1989-08-16
JPH01302726A (ja) 1989-12-06
EP0328078A3 (en) 1990-08-22
US4886565A (en) 1989-12-12

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