FR2677043B1 - Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression. - Google Patents

Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.

Info

Publication number
FR2677043B1
FR2677043B1 FR9106478A FR9106478A FR2677043B1 FR 2677043 B1 FR2677043 B1 FR 2677043B1 FR 9106478 A FR9106478 A FR 9106478A FR 9106478 A FR9106478 A FR 9106478A FR 2677043 B1 FR2677043 B1 FR 2677043B1
Authority
FR
France
Prior art keywords
treating
substrate
low pressure
pressure plasma
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9106478A
Other languages
English (en)
Other versions
FR2677043A1 (fr
Inventor
Jacques Schmitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solems SA
Original Assignee
Solems SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solems SA filed Critical Solems SA
Priority to FR9106478A priority Critical patent/FR2677043B1/fr
Priority to JP16187692A priority patent/JP3182702B2/ja
Publication of FR2677043A1 publication Critical patent/FR2677043A1/fr
Application granted granted Critical
Publication of FR2677043B1 publication Critical patent/FR2677043B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
FR9106478A 1991-05-29 1991-05-29 Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression. Expired - Lifetime FR2677043B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9106478A FR2677043B1 (fr) 1991-05-29 1991-05-29 Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.
JP16187692A JP3182702B2 (ja) 1991-05-29 1992-05-29 低圧プラズマでサブストレートを処理する方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9106478A FR2677043B1 (fr) 1991-05-29 1991-05-29 Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.

Publications (2)

Publication Number Publication Date
FR2677043A1 FR2677043A1 (fr) 1992-12-04
FR2677043B1 true FR2677043B1 (fr) 1993-12-24

Family

ID=9413249

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9106478A Expired - Lifetime FR2677043B1 (fr) 1991-05-29 1991-05-29 Procede, dispositif et appareil pour traiter un substrat par un plasma basse pression.

Country Status (2)

Country Link
JP (1) JP3182702B2 (fr)
FR (1) FR2677043B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
DE19605226C2 (de) * 1996-02-13 2001-02-22 Gericke Karl Heinz Vorrichtung zur Erzeugung mehrerer Mikroplasmen bei Umgebungstemperatur und Verwendung einer derartigen Vorrichtung
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7105452B2 (en) * 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
CN104317161A (zh) 2005-12-08 2015-01-28 分子制模股份有限公司 用于衬底双面图案形成的方法和系统
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
TW200801794A (en) 2006-04-03 2008-01-01 Molecular Imprints Inc Method of concurrently patterning a substrate having a plurality of fields and a plurality of alignment marks
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
JP5299782B2 (ja) 2009-09-30 2013-09-25 ブラザー工業株式会社 ラベル作成装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831529A (ja) * 1981-08-19 1983-02-24 Nec Corp 電子線露光装置用基板ホルダ−
JPS60135571A (ja) * 1983-12-21 1985-07-18 Shimadzu Corp スパツタリングにおけるタ−ゲツト取付方法
JPS60239025A (ja) * 1984-05-10 1985-11-27 Mitsubishi Electric Corp 反応性イオンエツチング装置
DE3678612D1 (de) * 1985-05-20 1991-05-16 Tegal Corp Plasmareaktor mit entnehmbarem einsatz.
FR2589168B1 (fr) * 1985-10-25 1992-07-17 Solems Sa Appareil et son procede d'utilisation pour la formation de films minces assistee par plasma
FR2621930B1 (fr) * 1987-10-15 1990-02-02 Solems Sa Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JPH02159030A (ja) * 1988-12-12 1990-06-19 Nec Corp 半導体装置の製造方法
US5091208A (en) * 1990-03-05 1992-02-25 Wayne State University Novel susceptor for use in chemical vapor deposition apparatus and its method of use
JPH05163575A (ja) * 1991-12-12 1993-06-29 Nec Corp 薄膜の形成方法

Also Published As

Publication number Publication date
FR2677043A1 (fr) 1992-12-04
JP3182702B2 (ja) 2001-07-03
JPH05304103A (ja) 1993-11-16

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