KR920020647A - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR920020647A
KR920020647A KR1019920006786A KR920006786A KR920020647A KR 920020647 A KR920020647 A KR 920020647A KR 1019920006786 A KR1019920006786 A KR 1019920006786A KR 920006786 A KR920006786 A KR 920006786A KR 920020647 A KR920020647 A KR 920020647A
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South Korea
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plasma processing
processing apparatus
group
heat insulating
condensation preventing
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KR1019920006786A
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English (en)
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KR0184677B1 (ko
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가즈오 후카사와
마사치카 스에츠구
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이노우에 쥰이치
도오교오 에레쿠토론 야마나시 가부시기가이샤
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Publication of KR920020647A publication Critical patent/KR920020647A/ko
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Publication of KR0184677B1 publication Critical patent/KR0184677B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 대한 드라이 에칭장치의 구성을 나타내는 개략도,
제2A도 내지 제2C도는 결로 방지수단을 나타내는 설명도.

Claims (11)

  1. 챔버내에 서로 평행하게 설치되고, 한쪽의 전극에 피처리체가 재치된 1쌍의 전극과, 1쌍의 전극 사이에 고주파 전력을 인가하는 고주파인가수단과, 상기 피처리체를 냉각하기 위한 냉각수단과, 상기 챔버내에 건조용 가스를 공급하는 가스 도입수단과, 상기 챔버내에서, 외기에 노출된 부분에 설치된 결로 방지수단과, 로되는 플라즈마 처리장치.
  2. 제1항에 있어서, 결로방지수단은, 수지재료로 되는 성형부재의 바깥 표면에 금속층을 형성하여 되는 커버인 것을 특징으로 하는 플라즈마 처리장치.
  3. 제2항에 있어서, 수지재료가 ABS수지, 염화비닐 베크라이트로 되는 군으로 선택되는 것을 특징으로 하는 플라즈마 처리장치.
  4. 제2항에 있어서, 금속층을 구성하는 금속이 니켈, 동, 은으로 되는 군으로 선택되는 것을 특징으로 하는 플라즈마 처리장치.
  5. 제2항에 있어서, 성형부재에 금속층을 형성하는 방법이 도금, 박막의 접착으로 되는 군으로 선택되는 것을 특징으로 하는 플라즈마 처리장치.
  6. 제1항에 있어서, 냉각수단은 2개의 냉매 배관, 전극내에 형성된 냉매유로 및 틸러에 의하여 냉매를 순환시키도록 구성되어 있고, 상기 냉매 배관의 적어도 일부가 세라믹스인 것을 특징으로 하는 플라즈마 처리장치.
  7. 제6항에 있어서, 세라믹스 알루미나, Si3N4, 지르코니아으로 되는 군으로 선택되는 것을 특징으로 하는 플라즈마 처리장치.
  8. 제1항에 있어서, 냉가가수단이 액체질소를 수용한 냉각 자켓인 것을 특징으로 하는 플라즈마 처리장치.
  9. 제1항에 있어서, 결로 방지수단이 단열부재인 것을 특징으로 하는 플라즈마 처리장치.
  10. 제9항에 있어서, 단열부재가 단열재, 세라믹스, SUS 316, 합성수지로 되는 군으로 선택되는 것을 특징으로 하는 플라즈마 처리장치.
  11. 제1항에 있어서, 결로 방지수단이 보온통 인 것을 특징으로 하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920006786A 1991-04-22 1992-04-22 플라즈마 처리장치 KR0184677B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3090401A JP2939355B2 (ja) 1991-04-22 1991-04-22 プラズマ処理装置
JP91-090401 1991-04-22

Publications (2)

Publication Number Publication Date
KR920020647A true KR920020647A (ko) 1992-11-21
KR0184677B1 KR0184677B1 (ko) 1999-04-15

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Family Applications (1)

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KR1019920006786A KR0184677B1 (ko) 1991-04-22 1992-04-22 플라즈마 처리장치

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US (1) US5342471A (ko)
JP (1) JP2939355B2 (ko)
KR (1) KR0184677B1 (ko)

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US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
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KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5975912A (en) 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
JPH08264465A (ja) * 1995-03-23 1996-10-11 Tokyo Electron Ltd 処理装置
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US6302057B1 (en) 1998-09-15 2001-10-16 Tokyo Electron Limited Apparatus and method for electrically isolating an electrode in a PECVD process chamber
JP2000124195A (ja) * 1998-10-14 2000-04-28 Tokyo Electron Ltd 表面処理方法及びその装置
KR100541398B1 (ko) * 1998-12-29 2006-03-14 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 공정
JP3439194B2 (ja) * 1999-03-05 2003-08-25 忠弘 大見 プラズマプロセス用装置
JP2006295205A (ja) * 1999-03-05 2006-10-26 Tadahiro Omi プラズマプロセス用装置
US6173673B1 (en) 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6720261B1 (en) * 1999-06-02 2004-04-13 Agere Systems Inc. Method and system for eliminating extrusions in semiconductor vias
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JP4137419B2 (ja) * 2001-09-28 2008-08-20 東京エレクトロン株式会社 プラズマ処理装置
KR100890493B1 (ko) 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치
CA2609075A1 (en) * 2005-05-20 2006-11-30 Cardinal Cg Company Deposition chamber desiccation systems and methods of use thereof
JP5044931B2 (ja) * 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
TWM292242U (en) * 2005-11-23 2006-06-11 Celetech Semiconductor Inc Radio frequency grounding rod
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
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JPH03107484A (ja) * 1989-09-20 1991-05-07 Hitachi Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP2939355B2 (ja) 1999-08-25
KR0184677B1 (ko) 1999-04-15
US5342471A (en) 1994-08-30
JPH05121333A (ja) 1993-05-18

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