KR950015705A - 박막 정전기 웨이퍼 척 - Google Patents

박막 정전기 웨이퍼 척 Download PDF

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Publication number
KR950015705A
KR950015705A KR1019930024690A KR930024690A KR950015705A KR 950015705 A KR950015705 A KR 950015705A KR 1019930024690 A KR1019930024690 A KR 1019930024690A KR 930024690 A KR930024690 A KR 930024690A KR 950015705 A KR950015705 A KR 950015705A
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KR
South Korea
Prior art keywords
insulating layer
forming
base
wafer chuck
electrode
Prior art date
Application number
KR1019930024690A
Other languages
English (en)
Inventor
로빈스 로저
오테리 데이브
프루엣티앙쿠라 포트
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR950015705A publication Critical patent/KR950015705A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

본 발명은 정전기 웨이퍼 척에 관한 것으로, 특히 금속 알루미늄을 사용하여 기부를 형성하고, 마스크를 사용하여 베이스를 선택적으로 산화시켜 제1절연층을 형성하며, 마스크되지 않은 부분에 도전체를 피착시켜 전원의 연결에 사용하는 전극쌍을 형성하고, 전극위에 얇은 제2 절연층을 형성하는 것으로서, 절연층을 산화 알루미늄으로 형성하였기 때문에, 절연성 향상과 아크시 절연물질이 파괴되는 문제점을 해결한 것이다, 본 발명의 정전기 웨이퍼 척은 평탄한 기부에 흠을 만들어 가스를 유입시킬 수 있으므로, 우수한 열접촉을 얻을 수 있고, 온도 조절이 용이하며, 웨이퍼 배면에 균일한 가스압을 제공할 수 있어 웨이퍼 면에서의 프로세스 수행시보다 우수한 균일성을 달성할 수 있다.

Description

박막 정전기 웨이퍼 척
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 양호한 실시예에 의해 발생되는 클램프력 대 인가 전압과의 관계를 도시한 그래프.

Claims (8)

  1. 정전기 웨이퍼 척 제조방법에 있어서, 기부를 형성하는 단계, 기부의 면상에 제1 절연층을 형성하는 단계, 각각 전원에 접속할 수 있고, 서로 인접하는 전극쌍을 제1 절연층상에 형성하는 단계 및 전극상에 제2 절연층을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 전극쌍을 형성하는 단계는, 제1 절연층의 일부를 마스크하는 단계 및 제1 절연층의 마스크되지 않은 부분에 도전층을 피착시키는 단계를 더 포함하는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 제1 절연층을 형성하는 단계는 산화물 층을 형성하기 위해 기부의 일부를 선택적으로 양극 산화시키는 단계를 더 포함하는 것을 특징으로 하는 방법.
  4. 제2항에 있어서, 제2 절연층을 형성하는 단계는, 산화물층을 형성하기 위해 도전층을 양극 산화시키는 단계 및 상기 산화물 층을 연마하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  5. 제1항에 있어서, 기부와 전극 사이에 전압을 인가하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  6. 제1항에 있어서, 기부의 면에 홈을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  7. 면을 갖는 기부, 기부상에 형성된 제1 절연층, 제1 절연층 위에 형성되고, 각각 전원에 접속할 수 있으며, 서로 인접한 전극쌍 및 전극위에 형성된 제2 절연층을 포함하는 것을 특징으로 하는 정전기 웨이퍼 척.
  8. 제7항에 있어서, 홈이 면에 형성되는 것을 특징으로 하는 정전기 웨이퍼 척.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930024690A 1992-11-20 1993-11-19 박막 정전기 웨이퍼 척 KR950015705A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97970492A 1992-11-20 1992-11-20
US07/979,704 1992-11-20

Publications (1)

Publication Number Publication Date
KR950015705A true KR950015705A (ko) 1995-06-17

Family

ID=25527081

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930024690A KR950015705A (ko) 1992-11-20 1993-11-19 박막 정전기 웨이퍼 척

Country Status (4)

Country Link
EP (1) EP0609504A1 (ko)
JP (1) JPH0737971A (ko)
KR (1) KR950015705A (ko)
TW (1) TW288188B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2317546A1 (en) * 2009-10-30 2011-05-04 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method of making a support structure
KR101115527B1 (ko) * 2010-02-01 2012-02-27 (주)포인트엔지니어링 정전척
KR101355505B1 (ko) * 2011-11-21 2014-02-11 엘아이지에이디피 주식회사 정전척 및 정전척 제조방법
RU2612879C1 (ru) * 2015-10-15 2017-03-13 Акционерное общество "Концерн радиостроения "Вега" Способ временного закрепления подложек на технологическом основании
CN108789205B (zh) * 2017-05-03 2021-03-16 宁波江丰电子材料股份有限公司 夹具系统以及固定靶材组件的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4724510A (en) * 1986-12-12 1988-02-09 Tegal Corporation Electrostatic wafer clamp
WO1988009054A1 (en) * 1987-05-06 1988-11-17 Labtam Limited Electrostatic chuck using ac field excitation

Also Published As

Publication number Publication date
JPH0737971A (ja) 1995-02-07
EP0609504A1 (en) 1994-08-10
TW288188B (ko) 1996-10-11

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