KR880000962A - 반도체장치 - Google Patents

반도체장치 Download PDF

Info

Publication number
KR880000962A
KR880000962A KR1019870006541A KR870006541A KR880000962A KR 880000962 A KR880000962 A KR 880000962A KR 1019870006541 A KR1019870006541 A KR 1019870006541A KR 870006541 A KR870006541 A KR 870006541A KR 880000962 A KR880000962 A KR 880000962A
Authority
KR
South Korea
Prior art keywords
word line
semiconductor device
auxiliary
main
lines
Prior art date
Application number
KR1019870006541A
Other languages
English (en)
Other versions
KR930004709B1 (ko
Inventor
히로시 이노우에
Original Assignee
하시모도 나미오
오끼뎅끼 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하시모도 나미오, 오끼뎅끼 고오교오 가부시끼가이샤 filed Critical 하시모도 나미오
Publication of KR880000962A publication Critical patent/KR880000962A/ko
Application granted granted Critical
Publication of KR930004709B1 publication Critical patent/KR930004709B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 디램 특히 본 발명 실시예의 워드선 배열을 보여주는 평면도. 제5도는 제4도에서의 V-V선 확대 단면도. 제6도는 제4에서의 Ⅵ-Ⅵ:선 확대 종단면도.

Claims (8)

  1. 서로 평행으로 연장하는 다수의 워드선을 가지고 있는 기억셀어레이 구조를 갖춘 반도체장치에 있어서, 그 안의 각 워드선은 워드선 전장에 걸쳐 연장하는 주워드선과, 오직 워드선 위를 따라서만 연장하는 보조워드선으로 이루어져 있고 인접워드선의 보조워드선은 길게 겹치지 않게 되는 반도체장치.
  2. 제1항에 있어서 보조워드선과 그 대응하는 주워드선이 접점에 의해 연결되는 반도체장치.
  3. 제2항에 있어서 접점은 보조워드선 각 가닥의 양끝에서 되는 반도체장치.
  4. 제1항에 있어서 보조워드선은 주워드선보다 작은 저항을 가진 재료로 형성되는 반도체장치.
  5. 제1항에 있어서 주워드선은 폴리사이드로 형성되는 반도체장치.
  6. 제1항에 있어서 보조워드선은 금속으로 형성되는 반도체장치.
  7. 제 1 항에 있어서 워드선 전장 구획들로 나누어 지고 교번 워드선의 홀수구획은 보조워드선으로 구성되고 중간워드선의 짝수 구획은 보조워드선으로 구성되어 있는 반도체장치.
  8. 제7항에 있어서 구획들은 실질상 동일한 길이를 가지고 있는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870006541A 1986-06-27 1987-06-26 반도체 장치 KR930004709B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-149403 1986-06-27
JP149403 1986-06-27
JP61149403A JP2511415B2 (ja) 1986-06-27 1986-06-27 半導体装置

Publications (2)

Publication Number Publication Date
KR880000962A true KR880000962A (ko) 1988-03-30
KR930004709B1 KR930004709B1 (ko) 1993-06-03

Family

ID=15474368

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870006541A KR930004709B1 (ko) 1986-06-27 1987-06-26 반도체 장치

Country Status (3)

Country Link
US (1) US4827449A (ko)
JP (1) JP2511415B2 (ko)
KR (1) KR930004709B1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569040B2 (ja) * 1987-03-18 1997-01-08 株式会社日立製作所 半導体集積回路装置
US5332914A (en) * 1988-02-05 1994-07-26 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
KR0141495B1 (ko) * 1988-11-01 1998-07-15 미다 가쓰시게 반도체 기억장치 및 그 결함구제방법
US6212089B1 (en) * 1996-03-19 2001-04-03 Hitachi, Ltd. Semiconductor memory device and defect remedying method thereof
JPH07114077B2 (ja) * 1989-06-01 1995-12-06 三菱電機株式会社 不揮発性半導体記憶装置
KR930008310B1 (ko) * 1991-02-05 1993-08-27 삼성전자 주식회사 반도체 메모리장치의 워드라인드라이버단 배치방법
DE4115909C1 (ko) * 1991-05-15 1992-11-12 Siemens Ag, 8000 Muenchen, De
JP3186084B2 (ja) * 1991-05-24 2001-07-11 日本電気株式会社 半導体メモリー装置
JPH0828476B2 (ja) * 1991-06-07 1996-03-21 富士通株式会社 半導体装置及びその製造方法
US5251168A (en) * 1991-07-31 1993-10-05 Texas Instruments Incorporated Boundary cells for improving retention time in memory devices
EP0704901B1 (en) * 1994-09-30 1999-12-15 STMicroelectronics S.r.l. Tolerant integrated circuit to great manufacturing faults
KR0137320B1 (ko) * 1994-12-15 1998-04-29 김광호 반도체 메모리장치의 워드라인 디코딩회로
JP3411129B2 (ja) * 1995-07-03 2003-05-26 沖電気工業株式会社 半導体メモリ
EP0817269B1 (en) * 1996-06-28 2008-09-10 Texas Instruments Incorporated Wordline layout for semiconductor memory device
TW353181B (en) * 1996-06-28 1999-02-21 Texas Instruments Inc Circuit with matched delay word line strap
US6141236A (en) * 1999-03-10 2000-10-31 Alliance Semiconductor Corporation Interleaved stitch using segmented word lines
JP3386038B2 (ja) * 2000-06-22 2003-03-10 セイコーエプソン株式会社 半導体記憶装置
US7042030B2 (en) * 2003-11-21 2006-05-09 Texas Instruments Incorporated High density memory array
DE102004008245B3 (de) * 2004-02-19 2005-09-08 Infineon Technologies Ag Integrierter Halbleiterspeicher und Verfahren zum elektrischen Stressen eines integrierten Halbleiterspeichers
JP4871038B2 (ja) * 2006-06-27 2012-02-08 王子製紙株式会社 隠蔽用粘着シートおよび剥離シート付き隠蔽用粘着シート

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4464734A (en) * 1980-04-07 1984-08-07 Texas Instruments Incorporated Semiconductor dynamic memory cell array with word lines extending into windows of capacitor plate
JPS60167361A (ja) * 1984-02-09 1985-08-30 Fujitsu Ltd 半導体記憶装置
JPS61110459A (ja) * 1984-11-02 1986-05-28 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ

Also Published As

Publication number Publication date
JP2511415B2 (ja) 1996-06-26
KR930004709B1 (ko) 1993-06-03
JPS636870A (ja) 1988-01-12
US4827449A (en) 1989-05-02

Similar Documents

Publication Publication Date Title
KR880000962A (ko) 반도체장치
KR920020515A (ko) 반도체 판독전용메모리
KR890002886A (ko) 반도체 기억장치
KR940008103A (ko) 반도체 독출전용 메모리
KR900003889A (ko) 반도체 메모리회로
KR930017189A (ko) 반도체롬
KR850002670A (ko) 마스터 슬라이스 반도체 장치
KR910013555A (ko) 반도체 기억장치
KR890016573A (ko) 반도체기억장치
KR920003517A (ko) 비트 라인에 대해 경사지게 배열된 메모리 매트릭스를 갖고 있는 반도체 메모리 디바이스
KR880003415A (ko) 반도체 집적 회로
KR930005020A (ko) 망사 구조의 전원선을 가지는 반도체 메모리 장치
DE3582376D1 (de) Halbleiterspeicheranordnung.
DE3586377D1 (de) Halbleiterspeicheranordnung.
KR850004877A (ko) 배선 지연이 적은 배선 및 데코우더를 가진 반도체 메모리
KR870008316A (ko) 반도체 기억장치
KR920008773A (ko) 반도체 기억장치
KR850008570A (ko) 반도체 메모리장치
KR900019238A (ko) 반도체기억장치
KR910013262A (ko) 반도체 메모리 어레이의 워드라인 배열방법
FR2368748A1 (fr) Memoire a programme programmable selectivement, manuellement
KR940001487A (ko) 단자대
DE3671314D1 (de) Halbleiterspeicher mit erhoehter wortleitungspannung.
KR850001624A (ko) 라운드 자켓 케이블
KR920001561A (ko) 지하설치용 비시일드형 인입선

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19980526

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee