KR860009484A - 반도체장치의 제조방법 - Google Patents
반도체장치의 제조방법Info
- Publication number
- KR860009484A KR860009484A KR1019860004071A KR860004071A KR860009484A KR 860009484 A KR860009484 A KR 860009484A KR 1019860004071 A KR1019860004071 A KR 1019860004071A KR 860004071 A KR860004071 A KR 860004071A KR 860009484 A KR860009484 A KR 860009484A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/09—Laser anneal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60-116275 | 1985-05-29 | ||
JP60116275A JPS61274345A (ja) | 1985-05-29 | 1985-05-29 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860009484A true KR860009484A (ko) | 1986-12-23 |
KR910000928B1 KR910000928B1 (ko) | 1991-02-18 |
Family
ID=14683041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860004071A KR910000928B1 (ko) | 1985-05-29 | 1986-05-24 | 반도체장치의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4957880A (ko) |
EP (1) | EP0203800A3 (ko) |
JP (1) | JPS61274345A (ko) |
KR (1) | KR910000928B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2544921B2 (ja) * | 1987-03-25 | 1996-10-16 | 三菱電機株式会社 | 半導体装置の電極形成方法 |
JPH0713953B2 (ja) * | 1988-12-19 | 1995-02-15 | 科学技術庁長官官房会計課長 | 光cvdによる金属膜形成方法 |
US5064685A (en) * | 1989-08-23 | 1991-11-12 | At&T Laboratories | Electrical conductor deposition method |
JP2974376B2 (ja) * | 1990-06-01 | 1999-11-10 | キヤノン株式会社 | 半導体装置の製造方法 |
JPH0464234A (ja) * | 1990-07-04 | 1992-02-28 | Mitsubishi Electric Corp | 配線パターンの形成方法 |
US5110760A (en) * | 1990-09-28 | 1992-05-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of nanometer lithography |
JPH0799791B2 (ja) * | 1992-04-15 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 透明基板上の回路ライン接続方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3477872A (en) * | 1966-09-21 | 1969-11-11 | Rca Corp | Method of depositing refractory metals |
US3785862A (en) * | 1970-12-14 | 1974-01-15 | Rca Corp | Method for depositing refractory metals |
JPS55150239A (en) * | 1979-05-10 | 1980-11-22 | Mitsubishi Electric Corp | Heat treating method |
JPS56100451A (en) * | 1980-01-14 | 1981-08-12 | Matsushita Electric Ind Co Ltd | Manufacture of electrode of semiconductor device |
US4359490A (en) * | 1981-07-13 | 1982-11-16 | Fairchild Camera & Instrument Corp. | Method for LPCVD co-deposition of metal and silicon to form metal silicide |
US4615904A (en) * | 1982-06-01 | 1986-10-07 | Massachusetts Institute Of Technology | Maskless growth of patterned films |
US4526624A (en) * | 1982-07-02 | 1985-07-02 | California Institute Of Technology | Enhanced adhesion of films to semiconductors or metals by high energy bombardment |
US4552845A (en) * | 1982-11-05 | 1985-11-12 | Reid Lorne S | Method for separating lysozyme from egg-white |
GB2131608B (en) * | 1982-11-26 | 1987-01-14 | Gen Electric Plc | Fabricating semiconductor circuits |
JPS59119853A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6050920A (ja) * | 1983-08-30 | 1985-03-22 | Toshiba Corp | 半導体装置の製造方法 |
JPS60138918A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 半導体装置の製造方法 |
US4568565A (en) * | 1984-05-14 | 1986-02-04 | Allied Corporation | Light induced chemical vapor deposition of conductive titanium silicide films |
US4543270A (en) * | 1984-06-20 | 1985-09-24 | Gould Inc. | Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser |
JPS61104614A (ja) * | 1984-10-29 | 1986-05-22 | Canon Inc | 堆積膜形成法 |
US4626315A (en) * | 1984-11-09 | 1986-12-02 | Fuji Photo Film Co., Ltd. | Process of forming ultrafine pattern |
US4699801A (en) * | 1985-02-28 | 1987-10-13 | Kabuskiki Kaisha Toshiba | Semiconductor device |
US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
-
1985
- 1985-05-29 JP JP60116275A patent/JPS61274345A/ja active Pending
-
1986
- 1986-05-23 EP EP86303973A patent/EP0203800A3/en not_active Withdrawn
- 1986-05-24 KR KR1019860004071A patent/KR910000928B1/ko not_active IP Right Cessation
-
1989
- 1989-04-28 US US07/346,359 patent/US4957880A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0203800A2 (en) | 1986-12-03 |
EP0203800A3 (en) | 1988-08-31 |
KR910000928B1 (ko) | 1991-02-18 |
US4957880A (en) | 1990-09-18 |
JPS61274345A (ja) | 1986-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030130 Year of fee payment: 13 |
|
LAPS | Lapse due to unpaid annual fee |