KR860004469A - 메모리를 내장한 반도체 집적회로 장치 - Google Patents

메모리를 내장한 반도체 집적회로 장치

Info

Publication number
KR860004469A
KR860004469A KR1019850008798A KR850008798A KR860004469A KR 860004469 A KR860004469 A KR 860004469A KR 1019850008798 A KR1019850008798 A KR 1019850008798A KR 850008798 A KR850008798 A KR 850008798A KR 860004469 A KR860004469 A KR 860004469A
Authority
KR
South Korea
Prior art keywords
built
memory
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
KR1019850008798A
Other languages
English (en)
Other versions
KR950000341B1 (ko
Inventor
후미오 쯔찌야
기요시 마쯔바라
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24810684A external-priority patent/JPH0736273B2/ja
Priority claimed from JP24810884A external-priority patent/JPH0636319B2/ja
Application filed by 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR860004469A publication Critical patent/KR860004469A/ko
Application granted granted Critical
Publication of KR950000341B1 publication Critical patent/KR950000341B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
KR1019850008798A 1984-11-26 1985-11-25 메모리를 내장한 반도체 집적회로 장치 KR950000341B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP24810684A JPH0736273B2 (ja) 1984-11-26 1984-11-26 半導体集積回路
JP24810884A JPH0636319B2 (ja) 1984-11-26 1984-11-26 半導体集積回路
JP59-248108 1984-11-26
JP59-248106 1984-11-26

Publications (2)

Publication Number Publication Date
KR860004469A true KR860004469A (ko) 1986-06-23
KR950000341B1 KR950000341B1 (ko) 1995-01-13

Family

ID=26538596

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008798A KR950000341B1 (ko) 1984-11-26 1985-11-25 메모리를 내장한 반도체 집적회로 장치

Country Status (6)

Country Link
US (2) US4783764A (ko)
EP (1) EP0183232B1 (ko)
KR (1) KR950000341B1 (ko)
DE (1) DE3584142D1 (ko)
HK (1) HK69393A (ko)
SG (1) SG43393G (ko)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5222046A (en) * 1988-02-17 1993-06-22 Intel Corporation Processor controlled command port architecture for flash memory
KR900019027A (ko) * 1988-05-23 1990-12-22 미다 가쓰시게 불휘발성 반도체 기억장치
JP2547615B2 (ja) * 1988-06-16 1996-10-23 三菱電機株式会社 読出専用半導体記憶装置および半導体記憶装置
US5511211A (en) * 1988-08-31 1996-04-23 Hitachi, Ltd. Method for flexibly developing a data processing system comprising rewriting instructions in non-volatile memory elements after function check indicates failure of required functions
US5428574A (en) * 1988-12-05 1995-06-27 Motorola, Inc. Static RAM with test features
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
FR2652672B1 (fr) * 1989-10-02 1991-12-20 Sgs Thomson Microelectronics Memoire a temps de lecture ameliore.
EP0446721B1 (en) * 1990-03-16 2000-12-20 Texas Instruments Incorporated Distributed processing memory
JPH0799636B2 (ja) * 1990-09-28 1995-10-25 三菱電機株式会社 半導体記憶装置
JPH0540730A (ja) * 1991-08-06 1993-02-19 Mitsubishi Electric Corp マイクロコンピユータ
US6414878B2 (en) 1992-03-17 2002-07-02 Hitachi, Ltd. Data line disturbance free memory block divided flash memory and microcomputer having flash memory therein
US7057937B1 (en) 1992-03-17 2006-06-06 Renesas Technology Corp. Data processing apparatus having a flash memory built-in which is rewritable by use of external device
JP3765585B2 (ja) * 1992-08-10 2006-04-12 株式会社ルネサステクノロジ データ処理装置
US5687345A (en) * 1992-03-17 1997-11-11 Hitachi, Ltd. Microcomputer having CPU and built-in flash memory that is rewritable under control of the CPU analyzing a command supplied from an external device
TW231343B (ko) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
JP2761326B2 (ja) * 1992-05-28 1998-06-04 三菱電機株式会社 マルチプロセッサ型ワンチップマイクロコンピュータ
KR950013342B1 (ko) * 1992-10-06 1995-11-02 삼성전자주식회사 반도체 메모리장치의 결함구제회로
US5559981A (en) * 1994-02-14 1996-09-24 Motorola, Inc. Pseudo static mask option register and method therefor
JP3584494B2 (ja) * 1994-07-25 2004-11-04 ソニー株式会社 半導体不揮発性記憶装置
US5867409A (en) * 1995-03-09 1999-02-02 Kabushiki Kaisha Toshiba Linear feedback shift register
US5982696A (en) * 1996-06-06 1999-11-09 Cirrus Logic, Inc. Memories with programmable address decoding and systems and methods using the same
US5952833A (en) 1997-03-07 1999-09-14 Micron Technology, Inc. Programmable voltage divider and method for testing the impedance of a programmable element
JP3494849B2 (ja) * 1997-05-29 2004-02-09 富士通株式会社 半導体記憶装置のデータ読み出し方法、半導体記憶装置及び半導体記憶装置の制御装置
US6883063B2 (en) * 1998-06-30 2005-04-19 Emc Corporation Method and apparatus for initializing logical objects in a data storage system
US6393540B1 (en) 1998-06-30 2002-05-21 Emc Corporation Moving a logical object from a set of source locations to a set of destination locations using a single command
US6329985B1 (en) 1998-06-30 2001-12-11 Emc Corporation Method and apparatus for graphically displaying mapping of a logical object
US6542909B1 (en) * 1998-06-30 2003-04-01 Emc Corporation System for determining mapping of logical objects in a computer system
US6282602B1 (en) * 1998-06-30 2001-08-28 Emc Corporation Method and apparatus for manipulating logical objects in a data storage system
US7383294B1 (en) 1998-06-30 2008-06-03 Emc Corporation System for determining the mapping of logical objects in a data storage system
US6038194A (en) * 1998-12-28 2000-03-14 Philips Electronics North America Corporation Memory decoder with zero static power
US6359808B1 (en) * 1999-10-19 2002-03-19 Advanced Micro Devices, Inc. Low voltage read cascode for 2V/3V and different bank combinations without metal options for a simultaneous operation flash memory device
JP2002170399A (ja) * 2000-12-05 2002-06-14 Fujitsu Ltd 半導体装置
US7016245B2 (en) * 2004-02-02 2006-03-21 Texas Instruments Incorporated Tracking circuit enabling quick/accurate retrieval of data stored in a memory array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025836B2 (ja) * 1978-05-24 1985-06-20 株式会社日立製作所 半導体不揮発性メモリ
US4208728A (en) * 1978-12-21 1980-06-17 Bell Telephone Laboratories, Incorporated Programable logic array
WO1980002881A1 (en) * 1979-06-12 1980-12-24 Motorola Inc Microcomputer with mpu-programmable eprom
US4289982A (en) * 1979-06-28 1981-09-15 Motorola, Inc. Apparatus for programming a dynamic EPROM
US4282446A (en) * 1979-10-01 1981-08-04 Texas Instruments Incorporated High density floating gate EPROM programmable by charge storage
US4494187A (en) * 1982-02-22 1985-01-15 Texas Instruments Incorporated Microcomputer with high speed program memory
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
JPS6151695A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体集積回路装置
US4787764A (en) * 1985-08-17 1988-11-29 Citizen Watch Co., Ltd. Sheet feeder in printers, having an improved operability in sheet setting
JPS6243744A (ja) * 1985-08-21 1987-02-25 Nec Corp マイクロコンピユ−タ
US4763303A (en) * 1986-02-24 1988-08-09 Motorola, Inc. Write-drive data controller

Also Published As

Publication number Publication date
EP0183232A3 (en) 1989-09-13
KR950000341B1 (ko) 1995-01-13
EP0183232A2 (en) 1986-06-04
EP0183232B1 (en) 1991-09-18
HK69393A (en) 1993-07-23
US4908795A (en) 1990-03-13
US4783764A (en) 1988-11-08
DE3584142D1 (de) 1991-10-24
SG43393G (en) 1993-06-25

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