DE68915136D1 - Integrierte Halbleiterspeicherschaltung. - Google Patents

Integrierte Halbleiterspeicherschaltung.

Info

Publication number
DE68915136D1
DE68915136D1 DE68915136T DE68915136T DE68915136D1 DE 68915136 D1 DE68915136 D1 DE 68915136D1 DE 68915136 T DE68915136 T DE 68915136T DE 68915136 T DE68915136 T DE 68915136T DE 68915136 D1 DE68915136 D1 DE 68915136D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915136T
Other languages
English (en)
Other versions
DE68915136T2 (de
Inventor
Makoto C O Intellect Yoshizawa
Tadashi C O Intellect Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68915136D1 publication Critical patent/DE68915136D1/de
Publication of DE68915136T2 publication Critical patent/DE68915136T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE68915136T 1988-12-24 1989-12-13 Integrierte Halbleiterspeicherschaltung. Expired - Fee Related DE68915136T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32645388A JPH0793022B2 (ja) 1988-12-24 1988-12-24 半導体メモリ集積回路

Publications (2)

Publication Number Publication Date
DE68915136D1 true DE68915136D1 (de) 1994-06-09
DE68915136T2 DE68915136T2 (de) 1994-09-15

Family

ID=18187981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915136T Expired - Fee Related DE68915136T2 (de) 1988-12-24 1989-12-13 Integrierte Halbleiterspeicherschaltung.

Country Status (5)

Country Link
US (1) US5065361A (de)
EP (1) EP0376065B1 (de)
JP (1) JPH0793022B2 (de)
KR (1) KR930001654B1 (de)
DE (1) DE68915136T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208488A (en) * 1989-03-03 1993-05-04 Kabushiki Kaisha Toshiba Potential detecting circuit
JPH07111826B2 (ja) * 1990-09-12 1995-11-29 株式会社東芝 半導体記憶装置
JPH04317219A (ja) * 1991-04-17 1992-11-09 Mitsubishi Electric Corp 出力回路
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
JP2708333B2 (ja) * 1992-09-02 1998-02-04 株式会社東芝 レベルシフタ回路
FR2698222B1 (fr) * 1992-11-18 1994-12-16 Gemplus Card Int Procédé et circuit de claquage de fusible dans un circuit intégré.
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
US5293342A (en) * 1992-12-17 1994-03-08 Casper Stephen L Wordline driver circuit having an automatic precharge circuit
US5311481A (en) * 1992-12-17 1994-05-10 Micron Technology, Inc. Wordline driver circuit having a directly gated pull-down device
US5444398A (en) * 1992-12-17 1995-08-22 Siemens Aktiengesellschaft Decoded-source sense amplifier with special column select driver voltage
US5359243A (en) * 1993-04-16 1994-10-25 Altera Corporation Fast TTL to CMOS level converting buffer with low standby power
JP3379601B2 (ja) * 1993-05-12 2003-02-24 セイコーインスツルメンツ株式会社 半導体集積回路装置
US5446367A (en) * 1993-05-25 1995-08-29 Micron Semiconductor, Inc. Reducing current supplied to an integrated circuit
US5910734A (en) 1997-02-20 1999-06-08 Micron Technology, Inc. Voltage level translator
US5952587A (en) * 1998-08-06 1999-09-14 The Torrington Company Imbedded bearing life and load monitor
US6933769B2 (en) * 2003-08-26 2005-08-23 Micron Technology, Inc. Bandgap reference circuit
US11626864B1 (en) * 2021-12-08 2023-04-11 Macronix International Co., Ltd. Level shift circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636318B2 (ja) * 1982-12-21 1994-05-11 株式会社東芝 不揮発性半導体メモリ
JPS6050697A (ja) * 1983-08-30 1985-03-20 Toshiba Corp 半導体集積回路
US4697101A (en) * 1983-08-30 1987-09-29 Kabushiki Kaisha Toshiba Read/write control circuit
US4782247A (en) * 1984-08-08 1988-11-01 Fujitsu Limited Decoder circuit having a variable power supply
JPS6366789A (ja) * 1986-09-09 1988-03-25 Mitsubishi Electric Corp Ｃｍｏｓ行デコ−ダ回路
US4916334A (en) * 1987-07-29 1990-04-10 Kabushiki Kaisha Toshiba High voltage booster circuit for use in EEPROMs

Also Published As

Publication number Publication date
JPH0793022B2 (ja) 1995-10-09
DE68915136T2 (de) 1994-09-15
KR930001654B1 (ko) 1993-03-08
EP0376065A3 (de) 1991-07-24
KR900011012A (ko) 1990-07-11
JPH02172099A (ja) 1990-07-03
EP0376065B1 (de) 1994-05-04
US5065361A (en) 1991-11-12
EP0376065A2 (de) 1990-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee