KR840006728A - 집적회로 제조방법 - Google Patents

집적회로 제조방법 Download PDF

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Publication number
KR840006728A
KR840006728A KR1019830005037A KR830005037A KR840006728A KR 840006728 A KR840006728 A KR 840006728A KR 1019830005037 A KR1019830005037 A KR 1019830005037A KR 830005037 A KR830005037 A KR 830005037A KR 840006728 A KR840006728 A KR 840006728A
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KR
South Korea
Prior art keywords
layer
photoresist
integrated circuit
polysilicon
circuit manufacturing
Prior art date
Application number
KR1019830005037A
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English (en)
Inventor
오계한, (외 1)
Original Assignee
오레그 이. 엘버
웨스턴 일렉트릭 캄파니 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오레그 이. 엘버, 웨스턴 일렉트릭 캄파니 인코포레이티드 filed Critical 오레그 이. 엘버
Publication of KR840006728A publication Critical patent/KR840006728A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING 
    • B63B2211/00—Applications
    • B63B2211/02—Oceanography

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용없음

Description

집적회로 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 명세서에서 계산되는 계산 과정에서 나타나는 여러 벡터량을 극좌표로 도시,
제4도는 알루미늄층위에 폴리실리콘 박막을 형성시켰을 때의 반사율 스펙트럼,
제6도는 폴리 실리콘 박막을 형성시켰을 때와 그렇지 않을 경우의 샘플의 전폭 분포를 도시.

Claims (5)

  1. 패턴화되는 제1층(매질Ⅲ)을 형성시켜 상기 층위에 감광성 내식막을 입힌 다음, 상기 감광성 내식막을 선택적으로 빛에 노출시켜 감광성 내식막을 표현화시켜 표현화된 감광성 내막식을 제1층을 선택적으로 에칭시키는 마스크로서 사용하게 되는 단계를 포함하는 집적회로 제조방법에 있어서, 상기 제조방법은 광노출단계동안 제1층으로부터의 빛의 표면 반사를 줄이기 위해 제1층과 감광성 내식막 사이에 폴리실리콘 박막층을 형성시키는 단계를 포함하는 것을 특징으로 하는 집적회로 제조방법.
  2. 제1항에 의한 제조방법에 있어서, 상기 제1층은 알루미늄으로 형성되는 것을 특징으로 하는 집적회로 제조방법.
  3. 제2항에 의한 제조방법에 있어서, 폴리실리콘층은 제1층과 함께 연장되어 제1층과 함께 선택적으로 에칭되는 것을 특징으로 하는 집적회로 제조방법.
  4. 제3항에 의한 제조방법에 있어서, 상기 폴리실리콘 박막층은 대략 300 내지 1000Å 정도의 두께를 갖는 것을 특징으로 하는 집적회로 제조방법.
  5. 제4항에 의한 제조방법에 있어서, 다수의 도선이 선택적으로 에칭된 폴리실리콘층에 결합되는 것을 특징으로 하는 집적회로 제조과정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830005037A 1982-11-01 1983-10-25 집적회로 제조방법 KR840006728A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43826782A 1982-11-01 1982-11-01
US438267 1982-11-01

Publications (1)

Publication Number Publication Date
KR840006728A true KR840006728A (ko) 1984-12-01

Family

ID=23739948

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830005037A KR840006728A (ko) 1982-11-01 1983-10-25 집적회로 제조방법

Country Status (3)

Country Link
KR (1) KR840006728A (ko)
GB (1) GB2129217A (ko)
IT (1) IT1171788B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
KR950011563B1 (ko) * 1990-11-27 1995-10-06 가부시끼가이샤 도시바 반도체장치의 제조방법
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0590224A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US5926739A (en) 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
US5985771A (en) * 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
JP4086967B2 (ja) * 1998-06-18 2008-05-14 日本碍子株式会社 静電チャックのパーティクル発生低減方法及び半導体製造装置
CN106950722B (zh) * 2017-04-12 2023-05-23 厦门腾诺光学科技有限公司 一种雾面太阳镜片及其生产工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
DE2911503A1 (de) * 1979-03-23 1980-09-25 Siemens Ag Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte

Also Published As

Publication number Publication date
GB2129217A (en) 1984-05-10
GB8328605D0 (en) 1983-11-30
IT8323529A0 (it) 1983-10-28
IT1171788B (it) 1987-06-10

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