IT8323529A0 - Rivestimento antiriflessione a metallizzazione di alluminio. - Google Patents

Rivestimento antiriflessione a metallizzazione di alluminio.

Info

Publication number
IT8323529A0
IT8323529A0 IT8323529A IT2352983A IT8323529A0 IT 8323529 A0 IT8323529 A0 IT 8323529A0 IT 8323529 A IT8323529 A IT 8323529A IT 2352983 A IT2352983 A IT 2352983A IT 8323529 A0 IT8323529 A0 IT 8323529A0
Authority
IT
Italy
Prior art keywords
reflection coating
aluminum metallized
metallized
aluminum
reflection
Prior art date
Application number
IT8323529A
Other languages
English (en)
Other versions
IT1171788B (it
Inventor
Kye Hwan Oh
David Stanley Yaney
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT8323529A0 publication Critical patent/IT8323529A0/it
Application granted granted Critical
Publication of IT1171788B publication Critical patent/IT1171788B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING 
    • B63B2211/00—Applications
    • B63B2211/02—Oceanography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT23529/83A 1982-11-01 1983-10-28 Rivestimento antiriflessione a metallizzazione di alluminio IT1171788B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43826782A 1982-11-01 1982-11-01

Publications (2)

Publication Number Publication Date
IT8323529A0 true IT8323529A0 (it) 1983-10-28
IT1171788B IT1171788B (it) 1987-06-10

Family

ID=23739948

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23529/83A IT1171788B (it) 1982-11-01 1983-10-28 Rivestimento antiriflessione a metallizzazione di alluminio

Country Status (3)

Country Link
KR (1) KR840006728A (it)
GB (1) GB2129217A (it)
IT (1) IT1171788B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
KR950011563B1 (ko) * 1990-11-27 1995-10-06 가부시끼가이샤 도시바 반도체장치의 제조방법
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JPH0590224A (ja) * 1991-01-22 1993-04-09 Toshiba Corp 半導体装置の製造方法
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US5926739A (en) 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US5985771A (en) 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
JP4086967B2 (ja) * 1998-06-18 2008-05-14 日本碍子株式会社 静電チャックのパーティクル発生低減方法及び半導体製造装置
CN106950722B (zh) * 2017-04-12 2023-05-23 厦门腾诺光学科技有限公司 一种雾面太阳镜片及其生产工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
DE2911503A1 (de) * 1979-03-23 1980-09-25 Siemens Ag Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte

Also Published As

Publication number Publication date
KR840006728A (ko) 1984-12-01
IT1171788B (it) 1987-06-10
GB8328605D0 (en) 1983-11-30
GB2129217A (en) 1984-05-10

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