KR20170057124A - 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼 - Google Patents

실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼 Download PDF

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KR20170057124A
KR20170057124A KR1020160119733A KR20160119733A KR20170057124A KR 20170057124 A KR20170057124 A KR 20170057124A KR 1020160119733 A KR1020160119733 A KR 1020160119733A KR 20160119733 A KR20160119733 A KR 20160119733A KR 20170057124 A KR20170057124 A KR 20170057124A
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South Korea
Prior art keywords
silicon wafer
heat treatment
notch
etching
quality
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KR1020160119733A
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English (en)
Korean (ko)
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마사시 니시무라
히로노리 다나카
Original Assignee
가부시키가이샤 사무코
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Publication of KR20170057124A publication Critical patent/KR20170057124A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020160119733A 2015-11-16 2016-09-20 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼 KR20170057124A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-223807 2015-11-16
JP2015223807A JP6565624B2 (ja) 2015-11-16 2015-11-16 シリコンウェーハの品質評価方法およびシリコンウェーハの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180148235A Division KR20180128883A (ko) 2015-11-16 2018-11-27 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼

Publications (1)

Publication Number Publication Date
KR20170057124A true KR20170057124A (ko) 2017-05-24

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ID=58771157

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020160119733A KR20170057124A (ko) 2015-11-16 2016-09-20 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼
KR1020180148235A KR20180128883A (ko) 2015-11-16 2018-11-27 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼
KR1020210040603A KR102373801B1 (ko) 2015-11-16 2021-03-29 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼

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Application Number Title Priority Date Filing Date
KR1020180148235A KR20180128883A (ko) 2015-11-16 2018-11-27 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼
KR1020210040603A KR102373801B1 (ko) 2015-11-16 2021-03-29 실리콘 웨이퍼의 품질 평가 방법, 실리콘 웨이퍼의 제조 방법 및 실리콘 웨이퍼

Country Status (4)

Country Link
JP (1) JP6565624B2 (ja)
KR (3) KR20170057124A (ja)
CN (1) CN107039300B (ja)
TW (1) TW201729313A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6773070B2 (ja) * 2017-09-06 2020-10-21 信越半導体株式会社 シリコンウェーハの評価方法及びシリコンウェーハの製造方法
JP6841202B2 (ja) * 2017-10-11 2021-03-10 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法
JP6806098B2 (ja) * 2018-01-18 2021-01-06 株式会社Sumco 半導体ウェーハの評価方法および半導体ウェーハの製造方法
JP7083699B2 (ja) * 2018-05-25 2022-06-13 信越半導体株式会社 評価方法
DE102019207433A1 (de) * 2019-05-21 2020-11-26 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
CN116642914B (zh) * 2023-05-29 2024-02-13 山东有研半导体材料有限公司 一种重掺砷低电阻率硅单晶微缺陷的检测方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521568A (ja) * 1991-07-11 1993-01-29 Mitsubishi Electric Corp シリコン単結晶ウエハの評価試験方法
JP2936916B2 (ja) * 1992-09-10 1999-08-23 信越半導体株式会社 シリコン単結晶の品質評価方法
JPH07263429A (ja) * 1994-03-17 1995-10-13 Matsushita Electron Corp 選択エッチング液
JPH0942936A (ja) * 1995-07-31 1997-02-14 Komatsu Electron Metals Co Ltd 半導体ウェハ周縁部の測定方法及び測定補助具
KR100917087B1 (ko) * 2000-09-19 2009-09-15 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유발 적층 흠이 거의 없는 질소 도핑 실리콘
JP4537643B2 (ja) * 2002-01-24 2010-09-01 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
JP2003243404A (ja) * 2002-02-21 2003-08-29 Shin Etsu Handotai Co Ltd アニールウエーハの製造方法及びアニールウエーハ
KR20050059910A (ko) * 2003-12-15 2005-06-21 주식회사 하이닉스반도체 실리콘 웨이퍼의 결함을 검출하는 방법
JP4253643B2 (ja) 2005-03-22 2009-04-15 株式会社リガク 単結晶インゴットの位置決め用治具
JP4743010B2 (ja) * 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
JP4577320B2 (ja) * 2007-03-12 2010-11-10 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP2008222505A (ja) * 2007-03-14 2008-09-25 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの評価方法およびシリコン単結晶の製造方法
DE102008046617B4 (de) * 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
JP2010228925A (ja) * 2009-03-25 2010-10-14 Sumco Corp シリコンウェーハおよびその製造方法
JP2010275147A (ja) * 2009-05-28 2010-12-09 Sumco Corp シリコンウェーハの結晶欠陥評価方法
JP2011003773A (ja) * 2009-06-19 2011-01-06 Sumco Corp シリコンウェーハの製造方法
JP5542383B2 (ja) * 2009-07-27 2014-07-09 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
JP2012204369A (ja) * 2011-03-23 2012-10-22 Shin Etsu Handotai Co Ltd エピタキシャルウェーハの製造方法

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Publication number Publication date
KR20210037655A (ko) 2021-04-06
KR20180128883A (ko) 2018-12-04
KR102373801B1 (ko) 2022-03-11
JP6565624B2 (ja) 2019-08-28
CN107039300B (zh) 2021-02-26
CN107039300A (zh) 2017-08-11
JP2017092372A (ja) 2017-05-25
TW201729313A (zh) 2017-08-16

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