KR20160134533A - 광전 변환 소자, 촬상 장치 - Google Patents

광전 변환 소자, 촬상 장치 Download PDF

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Publication number
KR20160134533A
KR20160134533A KR1020160057983A KR20160057983A KR20160134533A KR 20160134533 A KR20160134533 A KR 20160134533A KR 1020160057983 A KR1020160057983 A KR 1020160057983A KR 20160057983 A KR20160057983 A KR 20160057983A KR 20160134533 A KR20160134533 A KR 20160134533A
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South Korea
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layer
oxide
photoelectric conversion
electrode
conversion element
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Korean (ko)
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고지 다이리키
슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
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    • H10F39/10—Integrated devices
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    • H10F39/80—Constructional details of image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
KR1020160057983A 2015-05-14 2016-05-12 광전 변환 소자, 촬상 장치 Ceased KR20160134533A (ko)

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JP2015099011 2015-05-14
JPJP-P-2015-099011 2015-05-14

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KR20160134533A true KR20160134533A (ko) 2016-11-23

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US (1) US11728356B2 (https=)
JP (2) JP7045131B2 (https=)
KR (1) KR20160134533A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20180092323A (ko) * 2016-01-07 2018-08-17 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 셀레늄 포토멀티플라이어 및 이의 제조방법
JP2019036693A (ja) * 2017-08-21 2019-03-07 日本放送協会 光電変換素子およびその製造方法

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US9754980B2 (en) 2015-06-30 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
KR102660456B1 (ko) 2015-09-10 2024-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
WO2018146579A1 (ja) * 2017-02-10 2018-08-16 株式会社半導体エネルギー研究所 光電変換素子、撮像装置、電子機器及び光電変換素子の作製方法
WO2018172880A1 (en) * 2017-03-24 2018-09-27 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method thereof
CN111448663B (zh) 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019145596A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
JP2019145594A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えた撮像パネルと製造方法
KR102653048B1 (ko) * 2018-04-20 2024-04-01 소니그룹주식회사 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
WO2020217783A1 (ja) * 2019-04-25 2020-10-29 パナソニックＩｐマネジメント株式会社 撮像装置
JP7446786B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
TWI798767B (zh) * 2021-07-25 2023-04-11 袁知賢 光電轉換元件及其製作方法

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JP2014017440A (ja) 2012-07-11 2014-01-30 Nippon Hoso Kyokai <Nhk> 光電変換素子、及び、イメージセンサ

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