KR20160134533A - 광전 변환 소자, 촬상 장치 - Google Patents

광전 변환 소자, 촬상 장치 Download PDF

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Publication number
KR20160134533A
KR20160134533A KR1020160057983A KR20160057983A KR20160134533A KR 20160134533 A KR20160134533 A KR 20160134533A KR 1020160057983 A KR1020160057983 A KR 1020160057983A KR 20160057983 A KR20160057983 A KR 20160057983A KR 20160134533 A KR20160134533 A KR 20160134533A
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South Korea
Prior art keywords
layer
oxide
photoelectric conversion
electrode
conversion element
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Korean (ko)
Inventor
고지 다이리키
슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
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    • H10F39/10—Integrated devices
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    • H10F39/191—Photoconductor image sensors
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    • H10F39/80—Constructional details of image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020160057983A 2015-05-14 2016-05-12 광전 변환 소자, 촬상 장치 Ceased KR20160134533A (ko)

Applications Claiming Priority (2)

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JPJP-P-2015-099011 2015-05-14
JP2015099011 2015-05-14

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KR20160134533A true KR20160134533A (ko) 2016-11-23

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US (1) US11728356B2 (enExample)
JP (2) JP7045131B2 (enExample)
KR (1) KR20160134533A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR20180092323A (ko) * 2016-01-07 2018-08-17 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 셀레늄 포토멀티플라이어 및 이의 제조방법
JP2019036693A (ja) * 2017-08-21 2019-03-07 日本放送協会 光電変換素子およびその製造方法

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US9754980B2 (en) 2015-06-30 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
KR102698685B1 (ko) 2015-09-10 2024-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
JPWO2018146579A1 (ja) * 2017-02-10 2020-01-23 株式会社半導体エネルギー研究所 光電変換素子、撮像装置、電子機器及び光電変換素子の作製方法
WO2018172880A1 (en) * 2017-03-24 2018-09-27 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method thereof
CN111448663B (zh) 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019145594A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えた撮像パネルと製造方法
JP2019145596A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
CN111971796B (zh) 2018-04-20 2024-07-19 索尼公司 摄像器件、堆叠式摄像器件和固态摄像装置
JP7624608B2 (ja) * 2019-04-25 2025-01-31 パナソニックＩｐマネジメント株式会社 撮像装置
JP7446786B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
TWI798767B (zh) * 2021-07-25 2023-04-11 袁知賢 光電轉換元件及其製作方法

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