JP7045131B2 - 光電変換素子、撮像装置 - Google Patents

光電変換素子、撮像装置 Download PDF

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JP7045131B2
JP7045131B2 JP2016096943A JP2016096943A JP7045131B2 JP 7045131 B2 JP7045131 B2 JP 7045131B2 JP 2016096943 A JP2016096943 A JP 2016096943A JP 2016096943 A JP2016096943 A JP 2016096943A JP 7045131 B2 JP7045131 B2 JP 7045131B2
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oxide
layer
photoelectric conversion
conversion element
image pickup
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JP2016219800A (ja
JP2016219800A5 (enExample
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浩二 大力
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
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JP2016096943A 2015-05-14 2016-05-13 光電変換素子、撮像装置 Active JP7045131B2 (ja)

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Families Citing this family (14)

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Publication number Priority date Publication date Assignee Title
US9754980B2 (en) 2015-06-30 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
KR102698685B1 (ko) 2015-09-10 2024-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
EP3400616B1 (en) * 2016-01-07 2020-12-30 The Research Foundation for The State University of New York Selenium photomultiplier
JPWO2018146579A1 (ja) * 2017-02-10 2020-01-23 株式会社半導体エネルギー研究所 光電変換素子、撮像装置、電子機器及び光電変換素子の作製方法
WO2018172880A1 (en) * 2017-03-24 2018-09-27 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and manufacturing method thereof
JP6937189B2 (ja) * 2017-08-21 2021-09-22 日本放送協会 光電変換素子の製造方法
CN111448663B (zh) 2017-12-05 2024-04-16 索尼公司 摄像元件、层叠型摄像元件和固态摄像装置
JP2019145594A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えた撮像パネルと製造方法
JP2019145596A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
CN111971796B (zh) 2018-04-20 2024-07-19 索尼公司 摄像器件、堆叠式摄像器件和固态摄像装置
JP7624608B2 (ja) * 2019-04-25 2025-01-31 パナソニックＩｐマネジメント株式会社 撮像装置
JP7446786B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
TWI798767B (zh) * 2021-07-25 2023-04-11 袁知賢 光電轉換元件及其製作方法

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