KR20150115906A - (Ga) Zn Sn 산화물 스퍼터링 타겟 - Google Patents

(Ga) Zn Sn 산화물 스퍼터링 타겟 Download PDF

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KR20150115906A
KR20150115906A KR1020157024134A KR20157024134A KR20150115906A KR 20150115906 A KR20150115906 A KR 20150115906A KR 1020157024134 A KR1020157024134 A KR 1020157024134A KR 20157024134 A KR20157024134 A KR 20157024134A KR 20150115906 A KR20150115906 A KR 20150115906A
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sputtering
sputtering target
mixture
topcoat
oxides
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Korean (ko)
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예르크 오베르스테 베르그하우스
빌메르트 드 보쉐르
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솔레라스 어드밴스드 코팅스 비브이비에이
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Publication of KR20150115906A publication Critical patent/KR20150115906A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020157024134A 2013-02-05 2014-02-04 (Ga) Zn Sn 산화물 스퍼터링 타겟 Withdrawn KR20150115906A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13154037.9 2013-02-05
EP13154037 2013-02-05
PCT/EP2014/052134 WO2014122120A1 (en) 2013-02-05 2014-02-04 (ga) zn sn oxide sputtering target

Publications (1)

Publication Number Publication Date
KR20150115906A true KR20150115906A (ko) 2015-10-14

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KR1020157024134A Withdrawn KR20150115906A (ko) 2013-02-05 2014-02-04 (Ga) Zn Sn 산화물 스퍼터링 타겟

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Country Link
US (1) US9758856B2 (enExample)
EP (1) EP2953915B1 (enExample)
JP (1) JP2016507004A (enExample)
KR (1) KR20150115906A (enExample)
BE (1) BE1021021B1 (enExample)
ES (1) ES2615933T3 (enExample)
PL (1) PL2953915T3 (enExample)
WO (1) WO2014122120A1 (enExample)

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KR20170113234A (ko) * 2016-03-28 2017-10-12 히타치 긴조쿠 가부시키가이샤 스퍼터링 타깃재 및 그 제조 방법

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WO2019079207A1 (en) * 2017-10-16 2019-04-25 Materials Science International, Inc. PROCESS FOR PRODUCTION OF CATHODIC SPUTTER TARGET IN ZINC STANNATE
BE1025799B1 (nl) 2017-12-18 2019-07-19 Soleras Advanced Coatings Bvba Gespoten lithiumcobaltoxide-targets
JP7726991B2 (ja) * 2021-06-04 2025-08-20 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法
KR20240132047A (ko) 2022-01-05 2024-09-02 제이엑스금속주식회사 산화물막 및 산화물 스퍼터링 타깃

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GB9600210D0 (en) 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
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Publication number Priority date Publication date Assignee Title
KR20170113234A (ko) * 2016-03-28 2017-10-12 히타치 긴조쿠 가부시키가이샤 스퍼터링 타깃재 및 그 제조 방법

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EP2953915B1 (en) 2016-11-16
US9758856B2 (en) 2017-09-12
US20150368788A1 (en) 2015-12-24
ES2615933T3 (es) 2017-06-08
WO2014122120A1 (en) 2014-08-14
EP2953915A1 (en) 2015-12-16
PL2953915T3 (pl) 2017-07-31
JP2016507004A (ja) 2016-03-07
BE1021021B1 (nl) 2014-12-19

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