KR20140107129A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR20140107129A KR20140107129A KR1020140021110A KR20140021110A KR20140107129A KR 20140107129 A KR20140107129 A KR 20140107129A KR 1020140021110 A KR1020140021110 A KR 1020140021110A KR 20140021110 A KR20140021110 A KR 20140021110A KR 20140107129 A KR20140107129 A KR 20140107129A
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- layer
- connection terminal
- insulating
- insulating layer
- chip
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- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
- H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
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Applications Claiming Priority (4)
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| JPJP-P-2013-037899 | 2013-02-27 | ||
| JP2013037899 | 2013-02-27 | ||
| JP2013217624A JP6232249B2 (ja) | 2013-02-27 | 2013-10-18 | 半導体装置及び半導体装置の製造方法 |
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| US9589913B1 (en) * | 2013-03-29 | 2017-03-07 | Rockwell Collins, Inc. | Flip chip stacking utilizing interposer |
| JP2016076534A (ja) * | 2014-10-03 | 2016-05-12 | イビデン株式会社 | 金属ポスト付きプリント配線板およびその製造方法 |
| TWI566305B (zh) * | 2014-10-29 | 2017-01-11 | 巨擘科技股份有限公司 | 製造三維積體電路的方法 |
| TWI575785B (zh) | 2014-10-30 | 2017-03-21 | 新世紀光電股份有限公司 | 發光裝置 |
| JP6437805B2 (ja) * | 2014-12-03 | 2018-12-12 | 東京応化工業株式会社 | 積層体の製造方法、封止基板積層体の製造方法及び積層体 |
| JP6780933B2 (ja) * | 2015-12-18 | 2020-11-04 | 新光電気工業株式会社 | 端子構造、端子構造の製造方法、及び配線基板 |
| TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
| EP3451804B1 (en) * | 2017-08-28 | 2020-04-01 | Goodrich Actuation Systems Limited | Potting method |
| KR101942745B1 (ko) * | 2017-11-07 | 2019-01-28 | 삼성전기 주식회사 | 팬-아웃 반도체 패키지 |
| CN111315918B (zh) * | 2017-11-16 | 2022-07-08 | Jx金属株式会社 | 半导体基板及其制造方法 |
| KR20190083054A (ko) * | 2018-01-03 | 2019-07-11 | 삼성전자주식회사 | 반도체 패키지 |
| CN110032285A (zh) * | 2018-01-11 | 2019-07-19 | 南昌欧菲显示科技有限公司 | 触控模组及其制造方法 |
| KR20190137458A (ko) * | 2018-06-01 | 2019-12-11 | 삼성전자주식회사 | Led를 이용한 디스플레이 모듈 제조방법 |
| US10643943B2 (en) * | 2018-06-25 | 2020-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure, package-on-package structure and manufacturing method thereof |
| KR102530754B1 (ko) * | 2018-08-24 | 2023-05-10 | 삼성전자주식회사 | 재배선층을 갖는 반도체 패키지 제조 방법 |
| TWI674599B (zh) * | 2018-09-12 | 2019-10-11 | 鈺冠科技股份有限公司 | 堆疊型電容器組件結構 |
| TWI676194B (zh) * | 2018-09-21 | 2019-11-01 | 鈺冠科技股份有限公司 | 不需要使用碳膠層的堆疊型電容器及其製作方法、以及銀膠層 |
| TWI688017B (zh) * | 2019-03-15 | 2020-03-11 | 南茂科技股份有限公司 | 晶片封裝結構及其製造方法 |
| KR102629832B1 (ko) * | 2019-03-28 | 2024-01-26 | 삼성전자주식회사 | 반도체 패키지 기판 및 이를 이용한 반도체 패키지 제조 방법 |
| US11069605B2 (en) * | 2019-04-30 | 2021-07-20 | Advanced Semiconductor Engineering, Inc. | Wiring structure having low and high density stacked structures |
| US20210090981A1 (en) * | 2019-09-23 | 2021-03-25 | Intel Corporation | Surface finish surrounding a pad |
| GB2590689B (en) * | 2019-12-24 | 2023-01-11 | Rockley Photonics Ltd | Packaging of three-dimensional integrated circuit by encapsulation with copper posts and double sided redistribution layer |
| JP2022047357A (ja) * | 2020-09-11 | 2022-03-24 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| EP3998628A4 (en) * | 2020-09-17 | 2022-08-03 | Changxin Memory Technologies, Inc. | SOLDER PAD STRUCTURE, SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR PACKAGING STRUCTURE AND METHOD OF MANUFACTURE THEREOF |
| US11908831B2 (en) * | 2020-10-21 | 2024-02-20 | Stmicroelectronics Pte Ltd | Method for manufacturing a wafer level chip scale package (WLCSP) |
| US20230238345A1 (en) * | 2022-01-27 | 2023-07-27 | nD-HI Technologies Lab, Inc. | High-yielding and ultrafine pitch packages for large-scale ic or advanced ic |
| US12374647B2 (en) * | 2022-05-12 | 2025-07-29 | Renesas Electronics Corporation | Semiconductor device including chip-to-chip bonding |
| WO2025187363A1 (ja) * | 2024-03-07 | 2025-09-12 | パナソニックIpマネジメント株式会社 | インターポーザ |
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| JP3972846B2 (ja) * | 2003-03-25 | 2007-09-05 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP4016984B2 (ja) | 2004-12-21 | 2007-12-05 | セイコーエプソン株式会社 | 半導体装置、半導体装置の製造方法、回路基板、及び電子機器 |
| JP5222459B2 (ja) * | 2005-10-18 | 2013-06-26 | 新光電気工業株式会社 | 半導体チップの製造方法、マルチチップパッケージ |
| JP2010067916A (ja) * | 2008-09-12 | 2010-03-25 | Panasonic Corp | 集積回路装置 |
| US8399987B2 (en) * | 2009-12-04 | 2013-03-19 | Samsung Electronics Co., Ltd. | Microelectronic devices including conductive vias, conductive caps and variable thickness insulating layers |
| JP5357241B2 (ja) * | 2011-08-10 | 2013-12-04 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR101845529B1 (ko) * | 2012-02-02 | 2018-04-05 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자 및 그 제조방법 |
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2013
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2014
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- 2014-02-24 KR KR1020140021110A patent/KR20140107129A/ko not_active Withdrawn
- 2014-02-25 TW TW103106156A patent/TWI645567B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201438245A (zh) | 2014-10-01 |
| JP2014195041A (ja) | 2014-10-09 |
| US20140239508A1 (en) | 2014-08-28 |
| US9048225B2 (en) | 2015-06-02 |
| JP6232249B2 (ja) | 2017-11-15 |
| TWI645567B (zh) | 2018-12-21 |
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