KR20080068523A - 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 - Google Patents
다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 Download PDFInfo
- Publication number
- KR20080068523A KR20080068523A KR1020070107740A KR20070107740A KR20080068523A KR 20080068523 A KR20080068523 A KR 20080068523A KR 1020070107740 A KR1020070107740 A KR 1020070107740A KR 20070107740 A KR20070107740 A KR 20070107740A KR 20080068523 A KR20080068523 A KR 20080068523A
- Authority
- KR
- South Korea
- Prior art keywords
- sccm
- silicon layer
- forming
- junction
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 119
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 89
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 74
- 239000007789 gas Substances 0.000 claims description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 41
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 30
- 229910000077 silane Inorganic materials 0.000 claims description 30
- 239000002019 doping agent Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 239000012159 carrier gas Substances 0.000 description 20
- 230000008021 deposition Effects 0.000 description 20
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 19
- 239000000203 mixture Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 9
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/624,677 | 2007-01-18 | ||
| US11/624,677 US20080173350A1 (en) | 2007-01-18 | 2007-01-18 | Multi-junction solar cells and methods and apparatuses for forming the same |
| US11/671,988 | 2007-02-06 | ||
| US11/671,988 US7582515B2 (en) | 2007-01-18 | 2007-02-06 | Multi-junction solar cells and methods and apparatuses for forming the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090115721A Division KR20090130219A (ko) | 2007-01-18 | 2009-11-27 | 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20080068523A true KR20080068523A (ko) | 2008-07-23 |
Family
ID=39636629
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070107740A Ceased KR20080068523A (ko) | 2007-01-18 | 2007-10-25 | 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 |
| KR1020090115721A Withdrawn KR20090130219A (ko) | 2007-01-18 | 2009-11-27 | 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090115721A Withdrawn KR20090130219A (ko) | 2007-01-18 | 2009-11-27 | 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7582515B2 (enExample) |
| EP (1) | EP2104955A4 (enExample) |
| JP (1) | JP2010517271A (enExample) |
| KR (2) | KR20080068523A (enExample) |
| TW (1) | TWI369788B (enExample) |
| WO (1) | WO2008089043A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250151069A (ko) | 2024-04-13 | 2025-10-21 | 나세림 | 늘어나라 고무고무 반창고 |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US20070051388A1 (en) * | 2005-09-06 | 2007-03-08 | Applied Materials, Inc. | Apparatus and methods for using high frequency chokes in a substrate deposition apparatus |
| US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| US20080173350A1 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| US20080245414A1 (en) * | 2007-04-09 | 2008-10-09 | Shuran Sheng | Methods for forming a photovoltaic device with low contact resistance |
| US7875486B2 (en) * | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
| KR20100049599A (ko) * | 2007-07-17 | 2010-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 원격 플라즈마 소오스에 의한 세정률 개선 |
| US9054206B2 (en) * | 2007-08-17 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101046520B1 (ko) * | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어 |
| US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| US20090101201A1 (en) * | 2007-10-22 | 2009-04-23 | White John M | Nip-nip thin-film photovoltaic structure |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| US20090107549A1 (en) * | 2007-10-24 | 2009-04-30 | Peter Borden | Percolating amorphous silicon solar cell |
| US20090107955A1 (en) * | 2007-10-26 | 2009-04-30 | Tiner Robin L | Offset liner for chamber evacuation |
| US7741144B2 (en) * | 2007-11-02 | 2010-06-22 | Applied Materials, Inc. | Plasma treatment between deposition processes |
| US20090197015A1 (en) * | 2007-12-25 | 2009-08-06 | Applied Materials, Inc. | Method and apparatus for controlling plasma uniformity |
| EP2321445A1 (en) * | 2008-08-19 | 2011-05-18 | Oerlikon Solar AG, Trübbach | Improvement of electrical and optical properties of silicon solar cells |
| US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
| KR101078396B1 (ko) * | 2008-09-08 | 2011-11-01 | (주)에프에스디글로벌 | 이미지 센서, 이의 제조방법 및 이를 포함하는 사무기기 |
| US20100059110A1 (en) * | 2008-09-11 | 2010-03-11 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
| US20110180133A1 (en) * | 2008-10-24 | 2011-07-28 | Applied Materials, Inc. | Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires |
| US20100294746A1 (en) * | 2008-11-19 | 2010-11-25 | Applied Materials, Inc. | Laser scribing platform with moving gantry |
| KR101207582B1 (ko) * | 2009-02-17 | 2012-12-05 | 한국생산기술연구원 | 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법 |
| EP2219230A3 (en) * | 2009-02-17 | 2014-12-31 | Korean Institute of Industrial Technology | Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition |
| US20100212358A1 (en) * | 2009-02-26 | 2010-08-26 | Applied Materials, Inc. | Glass substrate orientation inspection methods and systems for photo voltaics production |
| KR20120003493A (ko) | 2009-04-24 | 2012-01-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 후속하는 고온 그룹 ⅲ 증착들을 위한 기판 전처리 |
| WO2011011301A2 (en) * | 2009-07-23 | 2011-01-27 | Applied Materials, Inc. | A mixed silicon phase film for high efficiency thin film silicon solar cells |
| JP4642126B2 (ja) * | 2009-08-05 | 2011-03-02 | シャープ株式会社 | 積層型光起電力素子および積層型光起電力素子の製造方法 |
| US20110139758A1 (en) | 2009-08-06 | 2011-06-16 | Applied Materials, Inc. | Latitudinal iso-line scribe, stitching, and simplified laser and scanner controls |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| WO2011046664A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells |
| US20110088765A1 (en) * | 2009-10-16 | 2011-04-21 | Kuang-Chieh Lai | Solar Cell Structure |
| US20110088760A1 (en) * | 2009-10-20 | 2011-04-21 | Applied Materials, Inc. | Methods of forming an amorphous silicon layer for thin film solar cell application |
| US20110126875A1 (en) * | 2009-12-01 | 2011-06-02 | Hien-Minh Huu Le | Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition |
| WO2011068197A1 (ja) * | 2009-12-04 | 2011-06-09 | 株式会社アルバック | 光電変換装置及び光電変換装置の製造方法 |
| US8120027B2 (en) * | 2009-12-10 | 2012-02-21 | Leonard Forbes | Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors |
| US8212250B2 (en) | 2009-12-10 | 2012-07-03 | Leonard Forbes | Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors |
| TWI455338B (zh) * | 2010-02-12 | 2014-10-01 | Univ Nat Chiao Tung | 超晶格結構的太陽能電池 |
| US20110232753A1 (en) * | 2010-03-23 | 2011-09-29 | Applied Materials, Inc. | Methods of forming a thin-film solar energy device |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| TWI512981B (zh) | 2010-04-27 | 2015-12-11 | Semiconductor Energy Lab | 微晶半導體膜的製造方法及半導體裝置的製造方法 |
| WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
| US8404302B2 (en) * | 2010-07-14 | 2013-03-26 | Sharp Laboratories Of America, Inc. | Solution process for fabricating a textured transparent conductive oxide (TCO) |
| EP2426737A1 (en) * | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack |
| US20120202316A1 (en) * | 2011-02-03 | 2012-08-09 | Applied Materials, Inc. | Plasma treatment of tco layers for silicon thin film photovoltaic devices |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| WO2013010127A2 (en) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Biometric imaging devices and associated methods |
| ITMI20111559A1 (it) | 2011-08-30 | 2013-03-01 | St Microelectronics Srl | Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione |
| CN102364703B (zh) * | 2011-10-17 | 2013-07-31 | 杭州赛昂电力有限公司 | 非晶硅薄膜太阳能电池的制造方法 |
| DE102011122152A1 (de) * | 2011-12-23 | 2013-06-27 | Leonhard Kurz Stiftung & Co. Kg | Mehrschichtkörper und Verfahren zum Herstellen eines solchen |
| US9214577B2 (en) | 2012-02-28 | 2015-12-15 | International Business Machines Corporation | Reduced light degradation due to low power deposition of buffer layer |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US10319872B2 (en) * | 2012-05-10 | 2019-06-11 | International Business Machines Corporation | Cost-efficient high power PECVD deposition for solar cells |
| KR20140046712A (ko) * | 2012-10-10 | 2014-04-21 | 엘지전자 주식회사 | 박막 태양 전지 |
| US20140217408A1 (en) * | 2013-02-06 | 2014-08-07 | International Business Machines Corporaton | Buffer layer for high performing and low light degraded solar cells |
| KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
| WO2014146008A2 (en) | 2013-03-15 | 2014-09-18 | Starfire Industries Llc | Scalable multi-role surface-wave plasma generator |
| WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
| WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| CN108550644B (zh) * | 2018-06-06 | 2019-10-25 | 东北大学 | 一种半叠层柔性硅基薄膜太阳能电池及其制备方法 |
Family Cites Families (118)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4063735A (en) * | 1976-03-15 | 1977-12-20 | Wendel Dan P | CB Radio highway board game apparatus |
| US4068043A (en) * | 1977-03-11 | 1978-01-10 | Energy Development Associates | Pump battery system |
| US4117506A (en) * | 1977-07-28 | 1978-09-26 | Rca Corporation | Amorphous silicon photovoltaic device having an insulating layer |
| US4490573A (en) * | 1979-12-26 | 1984-12-25 | Sera Solar Corporation | Solar cells |
| US4459163A (en) * | 1981-03-11 | 1984-07-10 | Chronar Corporation | Amorphous semiconductor method |
| US4400577A (en) * | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
| JPS59108370A (ja) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
| US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
| US4451538A (en) * | 1983-05-13 | 1984-05-29 | Atlantic Richfield Company | High hydrogen amorphous silicon |
| JPS6030182A (ja) * | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | 非晶質光起電力素子の製造装置 |
| JPH077752B2 (ja) * | 1984-03-07 | 1995-01-30 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
| JPS6193674A (ja) * | 1984-10-13 | 1986-05-12 | Sumitomo Electric Ind Ltd | アモルフアスシリコン太陽電池 |
| JPS61104678A (ja) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
| JPS6249672A (ja) * | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
| CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
| US4755475A (en) * | 1986-02-18 | 1988-07-05 | Sanyo Electric Co., Ltd. | Method of manufacturing photovoltaic device |
| US4816324A (en) * | 1986-05-14 | 1989-03-28 | Atlantic Richfield Company | Flexible photovoltaic device |
| US4841908A (en) * | 1986-06-23 | 1989-06-27 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
| DE68927845T2 (de) * | 1988-09-30 | 1997-08-07 | Kanegafuchi Chemical Ind | Sonnenzelle mit einer durchsichtigen Elektrode |
| JP2738557B2 (ja) * | 1989-03-10 | 1998-04-08 | 三菱電機株式会社 | 多層構造太陽電池 |
| US5055141A (en) * | 1990-01-19 | 1991-10-08 | Solarex Corporation | Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells |
| JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
| US5246506A (en) * | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
| US5256887A (en) * | 1991-07-19 | 1993-10-26 | Solarex Corporation | Photovoltaic device including a boron doping profile in an i-type layer |
| JP3070309B2 (ja) * | 1992-12-07 | 2000-07-31 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
| JP3164956B2 (ja) * | 1993-01-28 | 2001-05-14 | アプライド マテリアルズ インコーポレイテッド | Cvdにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法 |
| AUPM483494A0 (en) * | 1994-03-31 | 1994-04-28 | Pacific Solar Pty Limited | Multiple layer thin film solar cells |
| US5568013A (en) * | 1994-07-29 | 1996-10-22 | Center For Advanced Fiberoptic Applications | Micro-fabricated electron multipliers |
| AUPM982294A0 (en) * | 1994-12-02 | 1995-01-05 | Pacific Solar Pty Limited | Method of manufacturing a multilayer solar cell |
| US5677236A (en) * | 1995-02-24 | 1997-10-14 | Mitsui Toatsu Chemicals, Inc. | Process for forming a thin microcrystalline silicon semiconductor film |
| JPH08264815A (ja) * | 1995-03-23 | 1996-10-11 | Sanyo Electric Co Ltd | 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子 |
| JP3223102B2 (ja) * | 1995-06-05 | 2001-10-29 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
| FR2743193B1 (fr) * | 1996-01-02 | 1998-04-30 | Univ Neuchatel | Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede |
| JPH09199431A (ja) * | 1996-01-17 | 1997-07-31 | Canon Inc | 薄膜形成方法および薄膜形成装置 |
| US5730808A (en) * | 1996-06-27 | 1998-03-24 | Amoco/Enron Solar | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
| JPH10117006A (ja) * | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置 |
| KR100251070B1 (ko) * | 1996-08-28 | 2000-04-15 | 미다라이 후지오 | 광기전력 소자 |
| EP0831538A3 (en) * | 1996-09-19 | 1999-07-14 | Canon Kabushiki Kaisha | Photovoltaic element having a specific doped layer |
| US5977476A (en) * | 1996-10-16 | 1999-11-02 | United Solar Systems Corporation | High efficiency photovoltaic device |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| WO1999025029A1 (en) * | 1997-11-10 | 1999-05-20 | Kaneka Corporation | Method of producing silicon thin-film photoelectric transducer and plasma cvd apparatus used for the method |
| JP3581546B2 (ja) * | 1997-11-27 | 2004-10-27 | キヤノン株式会社 | 微結晶シリコン膜形成方法および光起電力素子の製造方法 |
| JP4208281B2 (ja) * | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
| JPH11246971A (ja) * | 1998-03-03 | 1999-09-14 | Canon Inc | 微結晶シリコン系薄膜の作製方法及び作製装置 |
| US6303945B1 (en) * | 1998-03-16 | 2001-10-16 | Canon Kabushiki Kaisha | Semiconductor element having microcrystalline semiconductor material |
| JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| EP1115160A4 (en) * | 1998-08-26 | 2006-01-04 | Nippon Sheet Glass Co Ltd | PHOTOVOLTAIC DEVICE |
| DE69936906T2 (de) * | 1998-10-12 | 2008-05-21 | Kaneka Corp. | Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung |
| US6335479B1 (en) * | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
| EP2264771A3 (en) * | 1998-12-03 | 2015-04-29 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
| JP2000196122A (ja) * | 1998-12-28 | 2000-07-14 | Tokuyama Corp | 光起電力素子 |
| JP3364180B2 (ja) * | 1999-01-18 | 2003-01-08 | 三菱重工業株式会社 | 非晶質シリコン太陽電池 |
| EP1032052B1 (en) * | 1999-02-26 | 2010-07-21 | Kaneka Corporation | Method of manufacturing silicon based thin film photoelectric conversion device |
| JP3046965B1 (ja) * | 1999-02-26 | 2000-05-29 | 鐘淵化学工業株式会社 | 非晶質シリコン系薄膜光電変換装置の製造方法 |
| JP3589581B2 (ja) * | 1999-02-26 | 2004-11-17 | 株式会社カネカ | タンデム型の薄膜光電変換装置の製造方法 |
| EP1054454A3 (en) * | 1999-05-18 | 2004-04-21 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same |
| US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
| US6472248B2 (en) * | 1999-07-04 | 2002-10-29 | Canon Kabushiki Kaisha | Microcrystalline series photovoltaic element and process for fabrication of same |
| DE19935046C2 (de) * | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
| JP4459341B2 (ja) * | 1999-11-19 | 2010-04-28 | 株式会社カネカ | 太陽電池モジュール |
| JP2001267611A (ja) * | 2000-01-13 | 2001-09-28 | Sharp Corp | 薄膜太陽電池及びその製造方法 |
| DE60033656T2 (de) * | 2000-03-03 | 2007-06-21 | Matsushita Electric Industrial Co., Ltd., Kadoma | Halbleiteranordnung |
| JP2002057359A (ja) * | 2000-06-01 | 2002-02-22 | Sharp Corp | 積層型太陽電池 |
| US7351993B2 (en) * | 2000-08-08 | 2008-04-01 | Translucent Photonics, Inc. | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| US6566159B2 (en) * | 2000-10-04 | 2003-05-20 | Kaneka Corporation | Method of manufacturing tandem thin-film solar cell |
| US6632993B2 (en) * | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
| US6548751B2 (en) * | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| JP4229606B2 (ja) * | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
| TWI313059B (enExample) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
| US6750394B2 (en) * | 2001-01-12 | 2004-06-15 | Sharp Kabushiki Kaisha | Thin-film solar cell and its manufacturing method |
| US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
| JP2002237610A (ja) * | 2001-02-08 | 2002-08-23 | Nippon Sheet Glass Co Ltd | 光電変換装置およびその製造方法 |
| JP4433131B2 (ja) * | 2001-03-22 | 2010-03-17 | キヤノン株式会社 | シリコン系薄膜の形成方法 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| GB0114896D0 (en) * | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
| JP4243046B2 (ja) * | 2001-08-03 | 2009-03-25 | 三洋電機株式会社 | 光起電力素子 |
| JP2003069061A (ja) * | 2001-08-24 | 2003-03-07 | Sharp Corp | 積層型光電変換素子 |
| US7309832B2 (en) * | 2001-12-14 | 2007-12-18 | Midwest Research Institute | Multi-junction solar cell device |
| US20070137698A1 (en) * | 2002-02-27 | 2007-06-21 | Wanlass Mark W | Monolithic photovoltaic energy conversion device |
| US7238545B2 (en) * | 2002-04-09 | 2007-07-03 | Kaneka Corporation | Method for fabricating tandem thin film photoelectric converter |
| US20050189012A1 (en) * | 2002-10-30 | 2005-09-01 | Canon Kabushiki Kaisha | Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process |
| JP4086629B2 (ja) * | 2002-11-13 | 2008-05-14 | キヤノン株式会社 | 光起電力素子 |
| JP2004165394A (ja) * | 2002-11-13 | 2004-06-10 | Canon Inc | 積層型光起電力素子 |
| US7402747B2 (en) * | 2003-02-18 | 2008-07-22 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the device |
| JP4241446B2 (ja) * | 2003-03-26 | 2009-03-18 | キヤノン株式会社 | 積層型光起電力素子 |
| US20040231590A1 (en) * | 2003-05-19 | 2004-11-25 | Ovshinsky Stanford R. | Deposition apparatus for the formation of polycrystalline materials on mobile substrates |
| JP4025744B2 (ja) * | 2004-03-26 | 2007-12-26 | 株式会社カネカ | 積層型光電変換装置の製造方法 |
| DK1650811T3 (da) * | 2003-07-24 | 2013-07-08 | Kaneka Corp | Stakket fotoelektrisk converter |
| JP4194468B2 (ja) * | 2003-10-10 | 2008-12-10 | シャープ株式会社 | 太陽電池およびその製造方法 |
| WO2005081324A1 (ja) * | 2004-02-20 | 2005-09-01 | Sharp Kabushiki Kaisha | 光電変換装置用基板、光電変換装置、積層型光電変換装置 |
| US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| JPWO2005109526A1 (ja) * | 2004-05-12 | 2008-03-21 | 株式会社カネカ | 薄膜光電変換装置 |
| US7557367B2 (en) * | 2004-06-04 | 2009-07-07 | The Board Of Trustees Of The University Of Illinois | Stretchable semiconductor elements and stretchable electrical circuits |
| JP2006013403A (ja) * | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、その製造方法およびその修復方法 |
| JP4025755B2 (ja) * | 2004-07-02 | 2007-12-26 | オリンパス株式会社 | 内視鏡 |
| US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| WO2006057161A1 (ja) * | 2004-11-29 | 2006-06-01 | Kaneka Corporation | 薄膜光電変換装置用基板、及びそれを備えた薄膜光電変換装置 |
| JP4945088B2 (ja) * | 2005-04-28 | 2012-06-06 | 三洋電機株式会社 | 積層型光起電力装置 |
| DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
| US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
| EP1734589B1 (en) * | 2005-06-16 | 2019-12-18 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing photovoltaic module |
| US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
| US7256140B2 (en) * | 2005-09-20 | 2007-08-14 | United Solar Ovonic Llc | Higher selectivity, method for passivating short circuit current paths in semiconductor devices |
| US20080057220A1 (en) * | 2006-01-31 | 2008-03-06 | Robert Bachrach | Silicon photovoltaic cell junction formed from thin film doping source |
| US20080047599A1 (en) * | 2006-03-18 | 2008-02-28 | Benyamin Buller | Monolithic integration of nonplanar solar cells |
| US7235736B1 (en) * | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
| US20070227579A1 (en) * | 2006-03-30 | 2007-10-04 | Benyamin Buller | Assemblies of cylindrical solar units with internal spacing |
| JP2009532918A (ja) * | 2006-04-05 | 2009-09-10 | シリコン ジェネシス コーポレーション | レイヤトランスファプロセスを使用する太陽電池の製造方法および構造 |
| US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| US20080047603A1 (en) * | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
| US20080153280A1 (en) * | 2006-12-21 | 2008-06-26 | Applied Materials, Inc. | Reactive sputter deposition of a transparent conductive film |
| US20080173350A1 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| JPWO2008099524A1 (ja) * | 2007-02-16 | 2010-05-27 | 三菱重工業株式会社 | 光電変換装置及びその製造方法 |
-
2007
- 2007-02-06 US US11/671,988 patent/US7582515B2/en not_active Expired - Fee Related
- 2007-10-25 KR KR1020070107740A patent/KR20080068523A/ko not_active Ceased
-
2008
- 2008-01-10 EP EP08727534A patent/EP2104955A4/en not_active Withdrawn
- 2008-01-10 JP JP2009546463A patent/JP2010517271A/ja active Pending
- 2008-01-10 WO PCT/US2008/050770 patent/WO2008089043A2/en not_active Ceased
- 2008-01-16 TW TW097101694A patent/TWI369788B/zh not_active IP Right Cessation
- 2008-06-30 US US12/164,236 patent/US20080264480A1/en not_active Abandoned
-
2009
- 2009-11-27 KR KR1020090115721A patent/KR20090130219A/ko not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20250151069A (ko) | 2024-04-13 | 2025-10-21 | 나세림 | 늘어나라 고무고무 반창고 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2104955A2 (en) | 2009-09-30 |
| WO2008089043A3 (en) | 2008-10-02 |
| US20080264480A1 (en) | 2008-10-30 |
| JP2010517271A (ja) | 2010-05-20 |
| KR20090130219A (ko) | 2009-12-21 |
| EP2104955A4 (en) | 2011-06-22 |
| US7582515B2 (en) | 2009-09-01 |
| US20080188033A1 (en) | 2008-08-07 |
| TWI369788B (en) | 2012-08-01 |
| TW200840071A (en) | 2008-10-01 |
| WO2008089043A2 (en) | 2008-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7582515B2 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
| US20080173350A1 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
| US7919398B2 (en) | Microcrystalline silicon deposition for thin film solar applications | |
| US7741144B2 (en) | Plasma treatment between deposition processes | |
| US20080223440A1 (en) | Multi-junction solar cells and methods and apparatuses for forming the same | |
| US7875486B2 (en) | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning | |
| KR101019273B1 (ko) | 다중-접합 태양 전지들과 이를 형성하기 위한 방법들 및 장치들 | |
| US20130112264A1 (en) | Methods for forming a doped amorphous silicon oxide layer for solar cell devices | |
| US20080245414A1 (en) | Methods for forming a photovoltaic device with low contact resistance | |
| WO2008137005A1 (en) | Method of forming thin film solar cells | |
| KR20100031090A (ko) | 태양 전지 분야용 웨이퍼 및 박막을 위한 미세결정질 실리콘 합금 | |
| US20090101201A1 (en) | Nip-nip thin-film photovoltaic structure | |
| US20090130827A1 (en) | Intrinsic amorphous silicon layer | |
| US20110171774A1 (en) | Cleaning optimization of pecvd solar films | |
| US20110275200A1 (en) | Methods of dynamically controlling film microstructure formed in a microcrystalline layer | |
| EP2304072A1 (en) | Solar cells and methods and apparatuses for forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20071025 |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20090525 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20090930 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20090525 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20091030 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20090930 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20120119 Appeal identifier: 2009101010010 Request date: 20091030 |
|
| A107 | Divisional application of patent | ||
| PA0107 | Divisional application |
Comment text: Divisional Application of Patent Patent event date: 20091127 Patent event code: PA01071R01D |
|
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20091030 Effective date: 20120119 |
|
| PJ1301 | Trial decision |
Patent event code: PJ13011S01D Patent event date: 20120119 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20091030 Decision date: 20120119 Appeal identifier: 2009101010010 |