KR20080068523A - 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 - Google Patents

다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 Download PDF

Info

Publication number
KR20080068523A
KR20080068523A KR1020070107740A KR20070107740A KR20080068523A KR 20080068523 A KR20080068523 A KR 20080068523A KR 1020070107740 A KR1020070107740 A KR 1020070107740A KR 20070107740 A KR20070107740 A KR 20070107740A KR 20080068523 A KR20080068523 A KR 20080068523A
Authority
KR
South Korea
Prior art keywords
sccm
silicon layer
forming
junction
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020070107740A
Other languages
English (en)
Korean (ko)
Inventor
수영 최
용-기 채
슈란 솅
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/624,677 external-priority patent/US20080173350A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20080068523A publication Critical patent/KR20080068523A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
KR1020070107740A 2007-01-18 2007-10-25 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치 Ceased KR20080068523A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/624,677 2007-01-18
US11/624,677 US20080173350A1 (en) 2007-01-18 2007-01-18 Multi-junction solar cells and methods and apparatuses for forming the same
US11/671,988 2007-02-06
US11/671,988 US7582515B2 (en) 2007-01-18 2007-02-06 Multi-junction solar cells and methods and apparatuses for forming the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090115721A Division KR20090130219A (ko) 2007-01-18 2009-11-27 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치

Publications (1)

Publication Number Publication Date
KR20080068523A true KR20080068523A (ko) 2008-07-23

Family

ID=39636629

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070107740A Ceased KR20080068523A (ko) 2007-01-18 2007-10-25 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치
KR1020090115721A Withdrawn KR20090130219A (ko) 2007-01-18 2009-11-27 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020090115721A Withdrawn KR20090130219A (ko) 2007-01-18 2009-11-27 다수―정크션 태양 전지 그리고 그 제조 방법 및 장치

Country Status (6)

Country Link
US (2) US7582515B2 (enExample)
EP (1) EP2104955A4 (enExample)
JP (1) JP2010517271A (enExample)
KR (2) KR20080068523A (enExample)
TW (1) TWI369788B (enExample)
WO (1) WO2008089043A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250151069A (ko) 2024-04-13 2025-10-21 나세림 늘어나라 고무고무 반창고

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US20070051388A1 (en) * 2005-09-06 2007-03-08 Applied Materials, Inc. Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
KR20100049599A (ko) * 2007-07-17 2010-05-12 어플라이드 머티어리얼스, 인코포레이티드 압력 제어되는 원격 플라즈마 소오스에 의한 세정률 개선
US9054206B2 (en) * 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101046520B1 (ko) * 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090101201A1 (en) * 2007-10-22 2009-04-23 White John M Nip-nip thin-film photovoltaic structure
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US20090107549A1 (en) * 2007-10-24 2009-04-30 Peter Borden Percolating amorphous silicon solar cell
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
US7741144B2 (en) * 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US20090197015A1 (en) * 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
EP2321445A1 (en) * 2008-08-19 2011-05-18 Oerlikon Solar AG, Trübbach Improvement of electrical and optical properties of silicon solar cells
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
KR101078396B1 (ko) * 2008-09-08 2011-11-01 (주)에프에스디글로벌 이미지 센서, 이의 제조방법 및 이를 포함하는 사무기기
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
US20110180133A1 (en) * 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
US20100294746A1 (en) * 2008-11-19 2010-11-25 Applied Materials, Inc. Laser scribing platform with moving gantry
KR101207582B1 (ko) * 2009-02-17 2012-12-05 한국생산기술연구원 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법
EP2219230A3 (en) * 2009-02-17 2014-12-31 Korean Institute of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
US20100212358A1 (en) * 2009-02-26 2010-08-26 Applied Materials, Inc. Glass substrate orientation inspection methods and systems for photo voltaics production
KR20120003493A (ko) 2009-04-24 2012-01-10 어플라이드 머티어리얼스, 인코포레이티드 후속하는 고온 그룹 ⅲ 증착들을 위한 기판 전처리
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
JP4642126B2 (ja) * 2009-08-05 2011-03-02 シャープ株式会社 積層型光起電力素子および積層型光起電力素子の製造方法
US20110139758A1 (en) 2009-08-06 2011-06-16 Applied Materials, Inc. Latitudinal iso-line scribe, stitching, and simplified laser and scanner controls
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110088765A1 (en) * 2009-10-16 2011-04-21 Kuang-Chieh Lai Solar Cell Structure
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
WO2011068197A1 (ja) * 2009-12-04 2011-06-09 株式会社アルバック 光電変換装置及び光電変換装置の製造方法
US8120027B2 (en) * 2009-12-10 2012-02-21 Leonard Forbes Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors
US8212250B2 (en) 2009-12-10 2012-07-03 Leonard Forbes Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors
TWI455338B (zh) * 2010-02-12 2014-10-01 Univ Nat Chiao Tung 超晶格結構的太陽能電池
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
TWI512981B (zh) 2010-04-27 2015-12-11 Semiconductor Energy Lab 微晶半導體膜的製造方法及半導體裝置的製造方法
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
US8404302B2 (en) * 2010-07-14 2013-03-26 Sharp Laboratories Of America, Inc. Solution process for fabricating a textured transparent conductive oxide (TCO)
EP2426737A1 (en) * 2010-09-03 2012-03-07 Applied Materials, Inc. Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
US20120202316A1 (en) * 2011-02-03 2012-08-09 Applied Materials, Inc. Plasma treatment of tco layers for silicon thin film photovoltaic devices
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
ITMI20111559A1 (it) 2011-08-30 2013-03-01 St Microelectronics Srl Strato tco di contatto frontale di un pannello solare a film sottile con strato barriera di metallo refrattario e processo di fabbricazione
CN102364703B (zh) * 2011-10-17 2013-07-31 杭州赛昂电力有限公司 非晶硅薄膜太阳能电池的制造方法
DE102011122152A1 (de) * 2011-12-23 2013-06-27 Leonhard Kurz Stiftung & Co. Kg Mehrschichtkörper und Verfahren zum Herstellen eines solchen
US9214577B2 (en) 2012-02-28 2015-12-15 International Business Machines Corporation Reduced light degradation due to low power deposition of buffer layer
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US10319872B2 (en) * 2012-05-10 2019-06-11 International Business Machines Corporation Cost-efficient high power PECVD deposition for solar cells
KR20140046712A (ko) * 2012-10-10 2014-04-21 엘지전자 주식회사 박막 태양 전지
US20140217408A1 (en) * 2013-02-06 2014-08-07 International Business Machines Corporaton Buffer layer for high performing and low light degraded solar cells
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014146008A2 (en) 2013-03-15 2014-09-18 Starfire Industries Llc Scalable multi-role surface-wave plasma generator
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
CN108550644B (zh) * 2018-06-06 2019-10-25 东北大学 一种半叠层柔性硅基薄膜太阳能电池及其制备方法

Family Cites Families (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063735A (en) * 1976-03-15 1977-12-20 Wendel Dan P CB Radio highway board game apparatus
US4068043A (en) * 1977-03-11 1978-01-10 Energy Development Associates Pump battery system
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
US4490573A (en) * 1979-12-26 1984-12-25 Sera Solar Corporation Solar cells
US4459163A (en) * 1981-03-11 1984-07-10 Chronar Corporation Amorphous semiconductor method
US4400577A (en) * 1981-07-16 1983-08-23 Spear Reginald G Thin solar cells
JPS59108370A (ja) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd 光起電力装置
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4451538A (en) * 1983-05-13 1984-05-29 Atlantic Richfield Company High hydrogen amorphous silicon
JPS6030182A (ja) * 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd 非晶質光起電力素子の製造装置
JPH077752B2 (ja) * 1984-03-07 1995-01-30 株式会社日立製作所 半導体装置の製造方法
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
JPS6193674A (ja) * 1984-10-13 1986-05-12 Sumitomo Electric Ind Ltd アモルフアスシリコン太陽電池
JPS61104678A (ja) * 1984-10-29 1986-05-22 Mitsubishi Electric Corp アモルフアス太陽電池
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US4816324A (en) * 1986-05-14 1989-03-28 Atlantic Richfield Company Flexible photovoltaic device
US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
DE68927845T2 (de) * 1988-09-30 1997-08-07 Kanegafuchi Chemical Ind Sonnenzelle mit einer durchsichtigen Elektrode
JP2738557B2 (ja) * 1989-03-10 1998-04-08 三菱電機株式会社 多層構造太陽電池
US5055141A (en) * 1990-01-19 1991-10-08 Solarex Corporation Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
JP2719230B2 (ja) * 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
JP3070309B2 (ja) * 1992-12-07 2000-07-31 富士電機株式会社 薄膜太陽電池の製造方法
JP3164956B2 (ja) * 1993-01-28 2001-05-14 アプライド マテリアルズ インコーポレイテッド Cvdにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法
AUPM483494A0 (en) * 1994-03-31 1994-04-28 Pacific Solar Pty Limited Multiple layer thin film solar cells
US5568013A (en) * 1994-07-29 1996-10-22 Center For Advanced Fiberoptic Applications Micro-fabricated electron multipliers
AUPM982294A0 (en) * 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JPH08264815A (ja) * 1995-03-23 1996-10-11 Sanyo Electric Co Ltd 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子
JP3223102B2 (ja) * 1995-06-05 2001-10-29 シャープ株式会社 太陽電池セルおよびその製造方法
FR2743193B1 (fr) * 1996-01-02 1998-04-30 Univ Neuchatel Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
JPH09199431A (ja) * 1996-01-17 1997-07-31 Canon Inc 薄膜形成方法および薄膜形成装置
US5730808A (en) * 1996-06-27 1998-03-24 Amoco/Enron Solar Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates
JPH10117006A (ja) * 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
KR100251070B1 (ko) * 1996-08-28 2000-04-15 미다라이 후지오 광기전력 소자
EP0831538A3 (en) * 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Photovoltaic element having a specific doped layer
US5977476A (en) * 1996-10-16 1999-11-02 United Solar Systems Corporation High efficiency photovoltaic device
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
WO1999025029A1 (en) * 1997-11-10 1999-05-20 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer and plasma cvd apparatus used for the method
JP3581546B2 (ja) * 1997-11-27 2004-10-27 キヤノン株式会社 微結晶シリコン膜形成方法および光起電力素子の製造方法
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JPH11246971A (ja) * 1998-03-03 1999-09-14 Canon Inc 微結晶シリコン系薄膜の作製方法及び作製装置
US6303945B1 (en) * 1998-03-16 2001-10-16 Canon Kabushiki Kaisha Semiconductor element having microcrystalline semiconductor material
JPH11354820A (ja) * 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
EP1115160A4 (en) * 1998-08-26 2006-01-04 Nippon Sheet Glass Co Ltd PHOTOVOLTAIC DEVICE
DE69936906T2 (de) * 1998-10-12 2008-05-21 Kaneka Corp. Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
EP2264771A3 (en) * 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
JP2000196122A (ja) * 1998-12-28 2000-07-14 Tokuyama Corp 光起電力素子
JP3364180B2 (ja) * 1999-01-18 2003-01-08 三菱重工業株式会社 非晶質シリコン太陽電池
EP1032052B1 (en) * 1999-02-26 2010-07-21 Kaneka Corporation Method of manufacturing silicon based thin film photoelectric conversion device
JP3046965B1 (ja) * 1999-02-26 2000-05-29 鐘淵化学工業株式会社 非晶質シリコン系薄膜光電変換装置の製造方法
JP3589581B2 (ja) * 1999-02-26 2004-11-17 株式会社カネカ タンデム型の薄膜光電変換装置の製造方法
EP1054454A3 (en) * 1999-05-18 2004-04-21 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US6472248B2 (en) * 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
DE19935046C2 (de) * 1999-07-26 2001-07-12 Schott Glas Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung
JP4459341B2 (ja) * 1999-11-19 2010-04-28 株式会社カネカ 太陽電池モジュール
JP2001267611A (ja) * 2000-01-13 2001-09-28 Sharp Corp 薄膜太陽電池及びその製造方法
DE60033656T2 (de) * 2000-03-03 2007-06-21 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleiteranordnung
JP2002057359A (ja) * 2000-06-01 2002-02-22 Sharp Corp 積層型太陽電池
US7351993B2 (en) * 2000-08-08 2008-04-01 Translucent Photonics, Inc. Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
US6566159B2 (en) * 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
US6632993B2 (en) * 2000-10-05 2003-10-14 Kaneka Corporation Photovoltaic module
US6548751B2 (en) * 2000-12-12 2003-04-15 Solarflex Technologies, Inc. Thin film flexible solar cell
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
TWI313059B (enExample) * 2000-12-08 2009-08-01 Sony Corporatio
US6750394B2 (en) * 2001-01-12 2004-06-15 Sharp Kabushiki Kaisha Thin-film solar cell and its manufacturing method
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
JP2002237610A (ja) * 2001-02-08 2002-08-23 Nippon Sheet Glass Co Ltd 光電変換装置およびその製造方法
JP4433131B2 (ja) * 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
JP4243046B2 (ja) * 2001-08-03 2009-03-25 三洋電機株式会社 光起電力素子
JP2003069061A (ja) * 2001-08-24 2003-03-07 Sharp Corp 積層型光電変換素子
US7309832B2 (en) * 2001-12-14 2007-12-18 Midwest Research Institute Multi-junction solar cell device
US20070137698A1 (en) * 2002-02-27 2007-06-21 Wanlass Mark W Monolithic photovoltaic energy conversion device
US7238545B2 (en) * 2002-04-09 2007-07-03 Kaneka Corporation Method for fabricating tandem thin film photoelectric converter
US20050189012A1 (en) * 2002-10-30 2005-09-01 Canon Kabushiki Kaisha Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process
JP4086629B2 (ja) * 2002-11-13 2008-05-14 キヤノン株式会社 光起電力素子
JP2004165394A (ja) * 2002-11-13 2004-06-10 Canon Inc 積層型光起電力素子
US7402747B2 (en) * 2003-02-18 2008-07-22 Kyocera Corporation Photoelectric conversion device and method of manufacturing the device
JP4241446B2 (ja) * 2003-03-26 2009-03-18 キヤノン株式会社 積層型光起電力素子
US20040231590A1 (en) * 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates
JP4025744B2 (ja) * 2004-03-26 2007-12-26 株式会社カネカ 積層型光電変換装置の製造方法
DK1650811T3 (da) * 2003-07-24 2013-07-08 Kaneka Corp Stakket fotoelektrisk converter
JP4194468B2 (ja) * 2003-10-10 2008-12-10 シャープ株式会社 太陽電池およびその製造方法
WO2005081324A1 (ja) * 2004-02-20 2005-09-01 Sharp Kabushiki Kaisha 光電変換装置用基板、光電変換装置、積層型光電変換装置
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JPWO2005109526A1 (ja) * 2004-05-12 2008-03-21 株式会社カネカ 薄膜光電変換装置
US7557367B2 (en) * 2004-06-04 2009-07-07 The Board Of Trustees Of The University Of Illinois Stretchable semiconductor elements and stretchable electrical circuits
JP2006013403A (ja) * 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
JP4025755B2 (ja) * 2004-07-02 2007-12-26 オリンパス株式会社 内視鏡
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
WO2006057161A1 (ja) * 2004-11-29 2006-06-01 Kaneka Corporation 薄膜光電変換装置用基板、及びそれを備えた薄膜光電変換装置
JP4945088B2 (ja) * 2005-04-28 2012-06-06 三洋電機株式会社 積層型光起電力装置
DE102005019225B4 (de) * 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
EP1734589B1 (en) * 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7256140B2 (en) * 2005-09-20 2007-08-14 United Solar Ovonic Llc Higher selectivity, method for passivating short circuit current paths in semiconductor devices
US20080057220A1 (en) * 2006-01-31 2008-03-06 Robert Bachrach Silicon photovoltaic cell junction formed from thin film doping source
US20080047599A1 (en) * 2006-03-18 2008-02-28 Benyamin Buller Monolithic integration of nonplanar solar cells
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
US20070227579A1 (en) * 2006-03-30 2007-10-04 Benyamin Buller Assemblies of cylindrical solar units with internal spacing
JP2009532918A (ja) * 2006-04-05 2009-09-10 シリコン ジェネシス コーポレーション レイヤトランスファプロセスを使用する太陽電池の製造方法および構造
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080047603A1 (en) * 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US20080153280A1 (en) * 2006-12-21 2008-06-26 Applied Materials, Inc. Reactive sputter deposition of a transparent conductive film
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
JPWO2008099524A1 (ja) * 2007-02-16 2010-05-27 三菱重工業株式会社 光電変換装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250151069A (ko) 2024-04-13 2025-10-21 나세림 늘어나라 고무고무 반창고

Also Published As

Publication number Publication date
EP2104955A2 (en) 2009-09-30
WO2008089043A3 (en) 2008-10-02
US20080264480A1 (en) 2008-10-30
JP2010517271A (ja) 2010-05-20
KR20090130219A (ko) 2009-12-21
EP2104955A4 (en) 2011-06-22
US7582515B2 (en) 2009-09-01
US20080188033A1 (en) 2008-08-07
TWI369788B (en) 2012-08-01
TW200840071A (en) 2008-10-01
WO2008089043A2 (en) 2008-07-24

Similar Documents

Publication Publication Date Title
US7582515B2 (en) Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) Multi-junction solar cells and methods and apparatuses for forming the same
US7919398B2 (en) Microcrystalline silicon deposition for thin film solar applications
US7741144B2 (en) Plasma treatment between deposition processes
US20080223440A1 (en) Multi-junction solar cells and methods and apparatuses for forming the same
US7875486B2 (en) Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
KR101019273B1 (ko) 다중-접합 태양 전지들과 이를 형성하기 위한 방법들 및 장치들
US20130112264A1 (en) Methods for forming a doped amorphous silicon oxide layer for solar cell devices
US20080245414A1 (en) Methods for forming a photovoltaic device with low contact resistance
WO2008137005A1 (en) Method of forming thin film solar cells
KR20100031090A (ko) 태양 전지 분야용 웨이퍼 및 박막을 위한 미세결정질 실리콘 합금
US20090101201A1 (en) Nip-nip thin-film photovoltaic structure
US20090130827A1 (en) Intrinsic amorphous silicon layer
US20110171774A1 (en) Cleaning optimization of pecvd solar films
US20110275200A1 (en) Methods of dynamically controlling film microstructure formed in a microcrystalline layer
EP2304072A1 (en) Solar cells and methods and apparatuses for forming the same

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20071025

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20090525

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20090930

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20090525

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20091030

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20090930

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20120119

Appeal identifier: 2009101010010

Request date: 20091030

A107 Divisional application of patent
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20091127

Patent event code: PA01071R01D

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20091030

Effective date: 20120119

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20120119

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20091030

Decision date: 20120119

Appeal identifier: 2009101010010