KR20080003383A - 산질화물층 형성 방법 및 시스템 - Google Patents

산질화물층 형성 방법 및 시스템 Download PDF

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Publication number
KR20080003383A
KR20080003383A KR1020077025080A KR20077025080A KR20080003383A KR 20080003383 A KR20080003383 A KR 20080003383A KR 1020077025080 A KR1020077025080 A KR 1020077025080A KR 20077025080 A KR20077025080 A KR 20077025080A KR 20080003383 A KR20080003383 A KR 20080003383A
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KR
South Korea
Prior art keywords
oxynitride film
upstream
annealing
gas
nitrogen
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KR1020077025080A
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English (en)
Korean (ko)
Inventor
마사노부 이게타
코리 와즈다
데이비드 엘 오메아라
크리스튼 쉬어
도시하라 후루카와
Original Assignee
동경 엘렉트론 주식회사
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20080003383A publication Critical patent/KR20080003383A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/34—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in more than one step
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
KR1020077025080A 2005-03-30 2006-02-16 산질화물층 형성 방법 및 시스템 Withdrawn KR20080003383A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/093,260 2005-03-30
US11/093,260 US7501352B2 (en) 2005-03-30 2005-03-30 Method and system for forming an oxynitride layer

Publications (1)

Publication Number Publication Date
KR20080003383A true KR20080003383A (ko) 2008-01-07

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KR1020077025080A Withdrawn KR20080003383A (ko) 2005-03-30 2006-02-16 산질화물층 형성 방법 및 시스템

Country Status (6)

Country Link
US (1) US7501352B2 (https=)
JP (1) JP4995807B2 (https=)
KR (1) KR20080003383A (https=)
CN (1) CN101151718A (https=)
TW (1) TW200641997A (https=)
WO (1) WO2006107415A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746968B2 (ja) * 2001-08-29 2006-02-22 東京エレクトロン株式会社 絶縁膜の形成方法および形成システム
CN101044626B (zh) * 2004-10-28 2012-01-25 东京毅力科创株式会社 栅极绝缘膜的形成方法、半导体装置和计算机记录介质
KR20070110748A (ko) * 2006-05-15 2007-11-20 주식회사 하이닉스반도체 커패시터 형성 방법
JP2010021378A (ja) * 2008-07-11 2010-01-28 Tokyo Electron Ltd シリコン酸窒化膜の形成方法および形成装置
JP2012079785A (ja) * 2010-09-30 2012-04-19 Tokyo Electron Ltd 絶縁膜の改質方法
US20120083127A1 (en) * 2010-09-30 2012-04-05 Tokyo Electron Limited Method for forming a pattern and a semiconductor device manufacturing method
KR102455355B1 (ko) * 2018-01-15 2022-10-18 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 산화에 대한 아르곤 추가
KR102780020B1 (ko) * 2020-04-06 2025-03-12 한국전기연구원 마이크로파 여기 플라즈마를 이용한 탄화규소 게이트 산화막 열처리 장치
JP7612219B2 (ja) * 2022-10-19 2025-01-14 株式会社 セルバック 成膜方法および成膜システム

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6227573A (ja) 1985-07-30 1987-02-05 Yasuo Tarui 光化学反応装置
JPS62237729A (ja) 1986-04-08 1987-10-17 Toshiba Corp シリコン酸化物のドライエツチング方法
US4919077A (en) * 1986-12-27 1990-04-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor producing apparatus
JPS63204616A (ja) 1987-02-19 1988-08-24 Fujitsu Ltd 反応チヤンバ−の洗浄方法
EP0299246A1 (en) 1987-07-16 1989-01-18 Texas Instruments Incorporated Processing apparatus and method
JPH02308536A (ja) 1989-05-23 1990-12-21 Sony Corp Ｅｃｒプラズマ装置とこれを用いた薄膜形成方法
JP2814021B2 (ja) * 1990-07-09 1998-10-22 三菱電機株式会社 半導体基板表面の処理方法
JP2734197B2 (ja) 1990-11-21 1998-03-30 富士電機株式会社 気相成長装置
US5217559A (en) * 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
JPH04274317A (ja) 1991-03-01 1992-09-30 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法およびその装置
JPH0513756A (ja) 1991-07-03 1993-01-22 Matsushita Electric Ind Co Ltd Ｍｉｓ型半導体装置およびその製造方法
EP0661385A1 (en) 1991-08-19 1995-07-05 OHMI, Tadahiro Method for forming oxide film
JP2989063B2 (ja) * 1991-12-12 1999-12-13 キヤノン株式会社 薄膜形成装置および薄膜形成方法
US5215588A (en) * 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
JPH0729827A (ja) 1993-07-13 1995-01-31 Kawasaki Steel Corp 半導体基板の製造方法および装置
DE4425830C2 (de) 1993-10-28 1996-08-08 Daimler Benz Aerospace Ag Aktivierbares energieabsorbierendes Bauteil
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
JP3234091B2 (ja) * 1994-03-10 2001-12-04 株式会社日立製作所 表面処理装置
JPH07253677A (ja) * 1994-03-16 1995-10-03 Mitsubishi Electric Corp 光オゾンアッシャ，光アッシング方法，及び半導体装置の製造方法
US5454589A (en) * 1994-08-18 1995-10-03 Morton International, Inc. Inflatable air cell protective device
JPH0878338A (ja) 1994-09-05 1996-03-22 Fujitsu Ltd 半導体の製造装置
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
JP3500050B2 (ja) * 1997-09-08 2004-02-23 東京エレクトロン株式会社 不純物除去装置、膜形成方法及び膜形成システム
JPH11150111A (ja) 1997-11-19 1999-06-02 Sony Corp 成膜方法及び成膜装置
US6187133B1 (en) * 1998-05-29 2001-02-13 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry
JP2000031060A (ja) 1998-07-10 2000-01-28 Hitachi Cable Ltd Ｉｉｉ−ｖ族化合物半導体気相エピタキシャル成長方法及び成長装置
DE19835705A1 (de) 1998-08-07 2000-02-10 Bayerische Motoren Werke Ag Karosserie für ein Fahrzeug
US6095085A (en) * 1998-08-20 2000-08-01 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US6274467B1 (en) * 1999-06-04 2001-08-14 International Business Machines Corporation Dual work function gate conductors with self-aligned insulating cap
JP2001012917A (ja) 1999-07-01 2001-01-19 Nkk Corp コイル位置検出装置
DE10014868A1 (de) 2000-03-24 2001-09-27 Sms Demag Ag Verfahren und Einrichtung zum Schmelztauchbeschichten von Metallsträngen, insbesondere von Stahlband
US6451713B1 (en) * 2000-04-17 2002-09-17 Mattson Technology, Inc. UV pretreatment process for ultra-thin oxynitride formation
US6444592B1 (en) * 2000-06-20 2002-09-03 International Business Machines Corporation Interfacial oxidation process for high-k gate dielectric process integration
JP4731694B2 (ja) * 2000-07-21 2011-07-27 東京エレクトロン株式会社 半導体装置の製造方法および基板処理装置
JP2002118477A (ja) 2000-10-06 2002-04-19 Vertex Standard Co Ltd Ｓｓｂ送信機
US6933248B2 (en) * 2000-10-19 2005-08-23 Texas Instruments Incorporated Method for transistor gate dielectric layer with uniform nitrogen concentration
JP2002170825A (ja) 2000-11-30 2002-06-14 Nec Corp 半導体装置及びｍｉｓ型半導体装置並びにその製造方法
KR20070116696A (ko) 2001-01-22 2007-12-10 동경 엘렉트론 주식회사 전자 디바이스 재료의 제조 방법 및 플라즈마 처리 방법
US20020146914A1 (en) * 2001-04-06 2002-10-10 Kuo-Tai Huang In-situ steam generation process for nitrided oxide
JP2002353995A (ja) 2001-05-25 2002-12-06 Nippon Telegr & Teleph Corp <Ntt> 光アクセス通信方法、光アクセスネットワークシステム及びセンター側装置
US6780719B2 (en) * 2001-06-20 2004-08-24 Texas Instruments Incorporated Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
US6426305B1 (en) * 2001-07-03 2002-07-30 International Business Machines Corporation Patterned plasma nitridation for selective epi and silicide formation
JP4369091B2 (ja) * 2001-07-18 2009-11-18 東京エレクトロン株式会社 基板処理方法
JP4078370B2 (ja) 2001-12-07 2008-04-23 東京エレクトロン株式会社 基板処理装置
SG152910A1 (en) 2001-12-07 2009-06-29 Tokyo Electron Ltd Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method
JP3770870B2 (ja) 2001-12-07 2006-04-26 東京エレクトロン株式会社 基板処理方法
US20030124873A1 (en) * 2001-12-28 2003-07-03 Guangcai Xing Method of annealing an oxide film
US6706643B2 (en) * 2002-01-08 2004-03-16 Mattson Technology, Inc. UV-enhanced oxy-nitridation of semiconductor substrates
JP4102072B2 (ja) * 2002-01-08 2008-06-18 株式会社東芝 半導体装置
US6774040B2 (en) * 2002-09-12 2004-08-10 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP2006505954A (ja) * 2002-11-08 2006-02-16 アヴィザ テクノロジー インコーポレイテッド 高ｋ誘電体の窒化物形成
US7087537B2 (en) * 2004-03-15 2006-08-08 Sharp Laboratories Of America, Inc. Method for fabricating oxide thin films
US7235440B2 (en) * 2003-07-31 2007-06-26 Tokyo Electron Limited Formation of ultra-thin oxide layers by self-limiting interfacial oxidation

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Publication number Publication date
TW200641997A (en) 2006-12-01
JP4995807B2 (ja) 2012-08-08
US20060228902A1 (en) 2006-10-12
CN101151718A (zh) 2008-03-26
JP2008535243A (ja) 2008-08-28
US7501352B2 (en) 2009-03-10
WO2006107415A1 (en) 2006-10-12

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