KR20070080841A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR20070080841A
KR20070080841A KR1020070013126A KR20070013126A KR20070080841A KR 20070080841 A KR20070080841 A KR 20070080841A KR 1020070013126 A KR1020070013126 A KR 1020070013126A KR 20070013126 A KR20070013126 A KR 20070013126A KR 20070080841 A KR20070080841 A KR 20070080841A
Authority
KR
South Korea
Prior art keywords
region
type
semiconductor device
drain
type source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020070013126A
Other languages
English (en)
Korean (ko)
Inventor
미카 에비하라
도모미츠 리사키
Original Assignee
세이코 인스트루 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 인스트루 가부시키가이샤 filed Critical 세이코 인스트루 가부시키가이샤
Publication of KR20070080841A publication Critical patent/KR20070080841A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020070013126A 2006-02-08 2007-02-08 반도체 장치 Withdrawn KR20070080841A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00031210 2006-02-08
JP2006031210A JP2007214267A (ja) 2006-02-08 2006-02-08 半導体装置

Publications (1)

Publication Number Publication Date
KR20070080841A true KR20070080841A (ko) 2007-08-13

Family

ID=38470769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070013126A Withdrawn KR20070080841A (ko) 2006-02-08 2007-02-08 반도체 장치

Country Status (5)

Country Link
US (1) US20070205466A1 (enExample)
JP (1) JP2007214267A (enExample)
KR (1) KR20070080841A (enExample)
CN (1) CN101017822A (enExample)
TW (1) TW200746392A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281909B (zh) * 2008-05-28 2010-04-21 浙江大学 Nmos管嵌入式双向可控硅静电防护器件
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
JP5296450B2 (ja) 2008-08-13 2013-09-25 セイコーインスツル株式会社 半導体装置
JP5361419B2 (ja) * 2009-01-29 2013-12-04 セイコーインスツル株式会社 半導体装置
JP5463698B2 (ja) * 2009-03-12 2014-04-09 富士電機株式会社 半導体素子、半導体装置および半導体素子の製造方法
JP2010251522A (ja) * 2009-04-15 2010-11-04 Panasonic Corp 半導体装置及びその製造方法
JP5511353B2 (ja) * 2009-12-14 2014-06-04 セイコーインスツル株式会社 半導体装置
CN102290340A (zh) * 2011-07-21 2011-12-21 中国科学院微电子研究所 一种改变静电保护器件触发电压的方法及装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118171A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
JPS6269660A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 静電保護回路
JPH0653497A (ja) * 1991-08-23 1994-02-25 Nec Corp 入出力保護回路を備えた半導体装置
US5248624A (en) * 1991-08-23 1993-09-28 Exar Corporation Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory
JP2894966B2 (ja) * 1994-04-01 1999-05-24 松下電器産業株式会社 非対称ｍｏｓ型半導体装置及びその製造方法、ならびに該半導体装置を含む静電破壊保護回路
US5686321A (en) * 1994-07-15 1997-11-11 United Microelectronics Corp. Local punchthrough stop for ultra large scale integration devices
JP2956626B2 (ja) * 1996-12-12 1999-10-04 日本電気株式会社 Ｍｏｓ型半導体装置の製造方法
JP4417445B2 (ja) * 1997-04-04 2010-02-17 聯華電子股▲ふん▼有限公司 半導体装置及びその製造方法
JPH10284616A (ja) * 1997-04-10 1998-10-23 Nippon Motorola Ltd 半導体集積回路の製造方法

Also Published As

Publication number Publication date
CN101017822A (zh) 2007-08-15
JP2007214267A (ja) 2007-08-23
TW200746392A (en) 2007-12-16
US20070205466A1 (en) 2007-09-06

Similar Documents

Publication Publication Date Title
US7285458B2 (en) Method for forming an ESD protection circuit
US8722522B2 (en) Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device
KR100517770B1 (ko) 정전기 방전 보호 소자
KR20070080841A (ko) 반도체 장치
KR101015531B1 (ko) 정전기 보호 소자 및 그 제조 방법
US20070235809A1 (en) Semiconductor device
KR20140141848A (ko) Esd 트랜지스터
JP2009512184A (ja) 静電気放電保護デバイス
KR101195720B1 (ko) 반도체 집적 회로 디바이스 및 그 제조 방법
KR20090098237A (ko) 높은 홀딩 전압을 갖는 스택형 실리콘 제어 정류기를구비한 정전기 방전 보호소자
KR100335527B1 (ko) 정전보호회로로서형성되는반도체소자
US7420252B2 (en) LDMOS device with improved ESD performance
US20110079847A1 (en) Semiconductor Device
JP2012094797A (ja) 半導体装置及びその製造方法
JP3036448B2 (ja) 半導体装置
US10163895B2 (en) Electrostatic discharge protection device
CN103681651A (zh) 静电放电保护电路装置
JP3425574B2 (ja) 半導体集積回路の入出力保護装置
JP2007059543A (ja) Ｅｓｄ保護回路及びｅｓｄ保護回路製造方法
CN101527313B (zh) 金属氧化物半导体元件及其制造方法
JP2002094012A (ja) Ｓｏｉ集積回路用ｅｓｄ保護素子
KR20060038235A (ko) 저 동작전압 및 고스냅백 전류 특성을 갖는 정전기방전보호 소자
TWI655746B (zh) 二極體與二極體串電路
KR100240684B1 (ko) 반도체장치의 이에스디 보호회로
KR20010037869A (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20070208

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid