JP2007214267A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007214267A
JP2007214267A JP2006031210A JP2006031210A JP2007214267A JP 2007214267 A JP2007214267 A JP 2007214267A JP 2006031210 A JP2006031210 A JP 2006031210A JP 2006031210 A JP2006031210 A JP 2006031210A JP 2007214267 A JP2007214267 A JP 2007214267A
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JP
Japan
Prior art keywords
type
semiconductor device
drain
region
type source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006031210A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007214267A5 (enExample
Inventor
Mika Ebihara
美香 海老原
Tomomitsu Risaki
智光 理崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2006031210A priority Critical patent/JP2007214267A/ja
Priority to TW096104310A priority patent/TW200746392A/zh
Priority to US11/703,018 priority patent/US20070205466A1/en
Priority to CNA2007100879517A priority patent/CN101017822A/zh
Priority to KR1020070013126A priority patent/KR20070080841A/ko
Publication of JP2007214267A publication Critical patent/JP2007214267A/ja
Priority to US12/380,430 priority patent/US20090230470A1/en
Publication of JP2007214267A5 publication Critical patent/JP2007214267A5/ja
Priority to US12/928,272 priority patent/US20110079847A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006031210A 2006-02-08 2006-02-08 半導体装置 Withdrawn JP2007214267A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006031210A JP2007214267A (ja) 2006-02-08 2006-02-08 半導体装置
TW096104310A TW200746392A (en) 2006-02-08 2007-02-06 Semiconductor device
US11/703,018 US20070205466A1 (en) 2006-02-08 2007-02-06 Semiconductor device
CNA2007100879517A CN101017822A (zh) 2006-02-08 2007-02-08 半导体器件
KR1020070013126A KR20070080841A (ko) 2006-02-08 2007-02-08 반도체 장치
US12/380,430 US20090230470A1 (en) 2006-02-08 2009-02-27 Semiconductor device
US12/928,272 US20110079847A1 (en) 2006-02-08 2010-12-07 Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031210A JP2007214267A (ja) 2006-02-08 2006-02-08 半導体装置

Publications (2)

Publication Number Publication Date
JP2007214267A true JP2007214267A (ja) 2007-08-23
JP2007214267A5 JP2007214267A5 (enExample) 2009-03-19

Family

ID=38470769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006031210A Withdrawn JP2007214267A (ja) 2006-02-08 2006-02-08 半導体装置

Country Status (5)

Country Link
US (1) US20070205466A1 (enExample)
JP (1) JP2007214267A (enExample)
KR (1) KR20070080841A (enExample)
CN (1) CN101017822A (enExample)
TW (1) TW200746392A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010212588A (ja) * 2009-03-12 2010-09-24 Fuji Electric Systems Co Ltd 半導体素子、半導体装置および半導体素子の製造方法
WO2010119653A1 (ja) * 2009-04-15 2010-10-21 パナソニック株式会社 半導体装置及びその製造方法
JP2011124516A (ja) * 2009-12-14 2011-06-23 Seiko Instruments Inc 半導体装置
US8227856B2 (en) 2008-08-13 2012-07-24 Seiko Instruments Inc. Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281909B (zh) * 2008-05-28 2010-04-21 浙江大学 Nmos管嵌入式双向可控硅静电防护器件
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
JP5361419B2 (ja) * 2009-01-29 2013-12-04 セイコーインスツル株式会社 半導体装置
CN102290340A (zh) * 2011-07-21 2011-12-21 中国科学院微电子研究所 一种改变静电保护器件触发电压的方法及装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118171A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
JPS6269660A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 静電保護回路
JPH0653497A (ja) * 1991-08-23 1994-02-25 Nec Corp 入出力保護回路を備えた半導体装置
JPH07321320A (ja) * 1994-04-01 1995-12-08 Matsushita Electric Ind Co Ltd 非対称ｍｏｓ型半導体装置及びその製造方法、ならびに該半導体装置を含む静電破壊保護回路
JPH10284616A (ja) * 1997-04-10 1998-10-23 Nippon Motorola Ltd 半導体集積回路の製造方法
JPH10335485A (ja) * 1997-04-04 1998-12-18 Nippon Steel Corp 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248624A (en) * 1991-08-23 1993-09-28 Exar Corporation Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory
US5686321A (en) * 1994-07-15 1997-11-11 United Microelectronics Corp. Local punchthrough stop for ultra large scale integration devices
JP2956626B2 (ja) * 1996-12-12 1999-10-04 日本電気株式会社 Ｍｏｓ型半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118171A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
JPS6269660A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 静電保護回路
JPH0653497A (ja) * 1991-08-23 1994-02-25 Nec Corp 入出力保護回路を備えた半導体装置
JPH07321320A (ja) * 1994-04-01 1995-12-08 Matsushita Electric Ind Co Ltd 非対称ｍｏｓ型半導体装置及びその製造方法、ならびに該半導体装置を含む静電破壊保護回路
JPH10335485A (ja) * 1997-04-04 1998-12-18 Nippon Steel Corp 半導体装置及びその製造方法
JPH10284616A (ja) * 1997-04-10 1998-10-23 Nippon Motorola Ltd 半導体集積回路の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227856B2 (en) 2008-08-13 2012-07-24 Seiko Instruments Inc. Semiconductor device
US8659073B2 (en) 2008-08-13 2014-02-25 Seiko Instruments Inc. Semiconductor device
JP2010212588A (ja) * 2009-03-12 2010-09-24 Fuji Electric Systems Co Ltd 半導体素子、半導体装置および半導体素子の製造方法
WO2010119653A1 (ja) * 2009-04-15 2010-10-21 パナソニック株式会社 半導体装置及びその製造方法
JP2011124516A (ja) * 2009-12-14 2011-06-23 Seiko Instruments Inc 半導体装置

Also Published As

Publication number Publication date
KR20070080841A (ko) 2007-08-13
CN101017822A (zh) 2007-08-15
TW200746392A (en) 2007-12-16
US20070205466A1 (en) 2007-09-06

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