CN101017822A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101017822A
CN101017822A CNA2007100879517A CN200710087951A CN101017822A CN 101017822 A CN101017822 A CN 101017822A CN A2007100879517 A CNA2007100879517 A CN A2007100879517A CN 200710087951 A CN200710087951 A CN 200710087951A CN 101017822 A CN101017822 A CN 101017822A
Authority
CN
China
Prior art keywords
type
region
semiconductor device
type source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100879517A
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English (en)
Chinese (zh)
Inventor
海老原美香
理崎智光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101017822A publication Critical patent/CN101017822A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNA2007100879517A 2006-02-08 2007-02-08 半导体器件 Pending CN101017822A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006031210A JP2007214267A (ja) 2006-02-08 2006-02-08 半導体装置
JP2006031210 2006-02-08

Publications (1)

Publication Number Publication Date
CN101017822A true CN101017822A (zh) 2007-08-15

Family

ID=38470769

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100879517A Pending CN101017822A (zh) 2006-02-08 2007-02-08 半导体器件

Country Status (5)

Country Link
US (1) US20070205466A1 (enExample)
JP (1) JP2007214267A (enExample)
KR (1) KR20070080841A (enExample)
CN (1) CN101017822A (enExample)
TW (1) TW200746392A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101651152A (zh) * 2008-08-13 2010-02-17 精工电子有限公司 半导体器件
CN101281909B (zh) * 2008-05-28 2010-04-21 浙江大学 Nmos管嵌入式双向可控硅静电防护器件
CN101826512A (zh) * 2009-01-29 2010-09-08 精工电子有限公司 半导体器件
CN102290340A (zh) * 2011-07-21 2011-12-21 中国科学院微电子研究所 一种改变静电保护器件触发电压的方法及装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
JP5463698B2 (ja) * 2009-03-12 2014-04-09 富士電機株式会社 半導体素子、半導体装置および半導体素子の製造方法
JP2010251522A (ja) * 2009-04-15 2010-11-04 Panasonic Corp 半導体装置及びその製造方法
JP5511353B2 (ja) * 2009-12-14 2014-06-04 セイコーインスツル株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118171A (ja) * 1984-07-04 1986-01-27 Hitachi Ltd 半導体装置
JPS6269660A (ja) * 1985-09-24 1987-03-30 Toshiba Corp 静電保護回路
JPH0653497A (ja) * 1991-08-23 1994-02-25 Nec Corp 入出力保護回路を備えた半導体装置
US5248624A (en) * 1991-08-23 1993-09-28 Exar Corporation Method of making isolated vertical pnp transistor in a complementary bicmos process with eeprom memory
JP2894966B2 (ja) * 1994-04-01 1999-05-24 松下電器産業株式会社 非対称ｍｏｓ型半導体装置及びその製造方法、ならびに該半導体装置を含む静電破壊保護回路
US5686321A (en) * 1994-07-15 1997-11-11 United Microelectronics Corp. Local punchthrough stop for ultra large scale integration devices
JP2956626B2 (ja) * 1996-12-12 1999-10-04 日本電気株式会社 Ｍｏｓ型半導体装置の製造方法
JP4417445B2 (ja) * 1997-04-04 2010-02-17 聯華電子股▲ふん▼有限公司 半導体装置及びその製造方法
JPH10284616A (ja) * 1997-04-10 1998-10-23 Nippon Motorola Ltd 半導体集積回路の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101281909B (zh) * 2008-05-28 2010-04-21 浙江大学 Nmos管嵌入式双向可控硅静电防护器件
CN101651152A (zh) * 2008-08-13 2010-02-17 精工电子有限公司 半导体器件
CN101651152B (zh) * 2008-08-13 2013-12-25 精工电子有限公司 半导体器件
CN101826512A (zh) * 2009-01-29 2010-09-08 精工电子有限公司 半导体器件
CN101826512B (zh) * 2009-01-29 2015-11-25 精工电子有限公司 半导体器件
CN102290340A (zh) * 2011-07-21 2011-12-21 中国科学院微电子研究所 一种改变静电保护器件触发电压的方法及装置

Also Published As

Publication number Publication date
KR20070080841A (ko) 2007-08-13
JP2007214267A (ja) 2007-08-23
TW200746392A (en) 2007-12-16
US20070205466A1 (en) 2007-09-06

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WD01 Invention patent application deemed withdrawn after publication

Open date: 20070815